JPH0447368B2 - - Google Patents
Info
- Publication number
- JPH0447368B2 JPH0447368B2 JP56047445A JP4744581A JPH0447368B2 JP H0447368 B2 JPH0447368 B2 JP H0447368B2 JP 56047445 A JP56047445 A JP 56047445A JP 4744581 A JP4744581 A JP 4744581A JP H0447368 B2 JPH0447368 B2 JP H0447368B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- forming
- polysilsesquioxane
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010931 gold Substances 0.000 claims description 30
- 239000010408 film Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims 2
- 238000004528 spin coating Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- -1 it must be resistant Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Description
【発明の詳細な説明】
本発明は薄膜磁気ヘツドの製造方法に関し、特
に導体コイルが高精度に形成される改善された製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a thin film magnetic head, and more particularly to an improved method of manufacturing a conductor coil with high precision.
最近、半導体製造技術に用いられるフオトリン
グラフイ技術を適用して作成する薄膜磁気ヘツド
は、量生産にすぐれて、周波数特性及びビツト記
録密度の向上が可能であるため、大記憶容量やデ
ータ転送速度の速いデイスク装置及びテープ装置
用として注目されている。 Recently, thin-film magnetic heads created by applying photolithography technology used in semiconductor manufacturing technology are suitable for mass production and can improve frequency characteristics and bit recording density, allowing for large storage capacity and data transfer. It is attracting attention for use in high-speed disk devices and tape devices.
第１図にかような薄膜磁気ヘツドの断面図を示
しており、１は絶縁性基板（例えばガラス基板）、
２は磁性体パターン、３はヘツドギヤツプとなる
絶縁層、４は厚い絶縁層、５は導体コイル、６は
上部磁性体パターン、７は融着ガラス層、８は記
録担体との対向面を示している。 FIG. 1 shows a cross-sectional view of such a thin film magnetic head, in which 1 is an insulating substrate (for example, a glass substrate);
2 is a magnetic material pattern, 3 is an insulating layer serving as a head gap, 4 is a thick insulating layer, 5 is a conductive coil, 6 is an upper magnetic material pattern, 7 is a fused glass layer, and 8 is a surface facing the recording carrier. There is.
ところで、この様な構造にする製造方法におい
て、導体コイル５のパターンニングは最も微細で
難かしく、通常は蒸着した導体層をレジスト膜を
保護マスクとしてエツチング法で形成させている
が、サイドエツチングが生じるため、導体コイル
は梯形の断面形状となるばかりでなく、エツチン
グ時間などの微妙な相異で、その断面積は一定と
ならず、形成された磁気ヘツドの寿命や信頼性が
充分でない欠点がある。 By the way, in the manufacturing method for producing such a structure, the patterning of the conductor coil 5 is the most minute and difficult, and usually the vapor-deposited conductor layer is formed by an etching method using a resist film as a protective mask, but side etching is As a result, the conductor coil not only has a trapezoidal cross-sectional shape, but also its cross-sectional area is not constant due to subtle differences in etching time, etc., and the formed magnetic head has the disadvantage of insufficient longevity and reliability. be.
本発明はこのような欠点を除去し、高精度な角
型断面形状の導体コイルをもつた磁気ヘツドの製
造方法を提供するもので、その特徴は厚い絶縁層
内の所要面上に薄い導体膜を被着し、該導体膜上
に導体コイルパターンの膜厚と同等以上の膜厚を
もつたレジストパターンを形成し、次いでレジス
トパターンの間隙部分の露出した前記導体膜を電
極として導体層を鍍金し、次いでレジストパター
ンを除去した後、前記薄い導体膜を完全に除去で
きる程度に全面エツチングを行ない、次いで絶縁
層となる有機耐熱性樹脂を塗布し、更に全面に該
樹脂からなる絶縁層あるいは無機物からなる絶縁
層を形成する工程を含むことにある製造方法であ
る。更に本発明の他の特徴は前記有機耐熱性樹脂
はポリシルセスキオキサンを含むことにある製造
方法であり、以下実施例によつて詳細に説明す
る。 The present invention eliminates these drawbacks and provides a method for manufacturing a magnetic head having a highly accurate conductor coil with a rectangular cross-section. A resist pattern having a thickness equal to or greater than that of the conductor coil pattern is formed on the conductor film, and then a conductor layer is plated using the conductor film exposed in the gap portion of the resist pattern as an electrode. Then, after removing the resist pattern, the entire surface is etched to the extent that the thin conductive film can be completely removed. Next, an organic heat-resistant resin that will become an insulating layer is applied, and then an insulating layer made of the resin or an inorganic material is applied to the entire surface. This manufacturing method includes the step of forming an insulating layer consisting of: Another feature of the present invention is a manufacturing method in which the organic heat-resistant resin contains polysilsesquioxane, which will be explained in detail below with reference to Examples.
第２図ないし第９図は本発明にかゝる製造方法
の工程順断面図で、先づ、第２図に示すように絶
縁性ガラス基板１上に磁性体パターン（例えばパ
ーマロイ）２を形成し、次いでヘツドギヤツプと
なる絶縁層３を酸化シリコン（SiO2）の薄膜
（膜厚0.3μｍ程度）で形成した後、その上面にポ
リシルセスキオキサンを含む樹脂１０をスピンナ
ーで塗布して450℃、１時間熱処理する。その際、
ポリシルセスキオキサンを含む樹脂１０の膜厚は
1μｍ位とする。 2 to 9 are cross-sectional views of the manufacturing method according to the present invention in the order of steps. First, as shown in FIG. 2, a magnetic material pattern (for example, permalloy) 2 is formed on an insulating glass substrate 1. Then, after forming the insulating layer 3 which will become the head gap with a thin film (about 0.3 μm thick) of silicon oxide (SiO 2 ), a resin 10 containing polysilsesquioxane is applied on the top surface with a spinner and heated at 450°C. , heat treated for 1 hour. that time,
The film thickness of resin 10 containing polysilsesquioxane is
It should be about 1μm.
次いで、第３図に示すように、その上面に膜厚
0.2〜0.8μｍの金（Au）薄膜１１を蒸着法によつ
て被着し、その上にレジスト膜１２を塗布し、プ
リベーキングを行なつて、その膜厚は1.5μｍ程度
にする。次いで、第４図に示すように、フオトプ
ロセスまたは、電子線リソグラフイなどによつて
レジスト膜１２をパターンニングして、導体コイ
ルの逆パターンを形成する。この場合、導体コイ
ル相互の幅、即ちレジスト膜パターンの間隔が
3μｍ以上あるときはレジスト膜としてAZ1350な
ど用いて、パターンニングはクロムマスクを使用
して遠紫外線露光を行ない、レジスト膜パターン
の間隔が3μｍ以下のときはポリメチルメタクリ
レート（PMMA）を用いて、電子ビーム露光あ
るいはＸ線露光を行なうことが望ましい。 Next, as shown in Figure 3, a film thickness is applied to the top surface.
A gold (Au) thin film 11 with a thickness of 0.2 to 0.8 μm is deposited by vapor deposition, and a resist film 12 is applied thereon and prebaked to a thickness of about 1.5 μm. Next, as shown in FIG. 4, the resist film 12 is patterned by photoprocessing or electron beam lithography to form a reverse pattern of the conductor coil. In this case, the width between the conductor coils, that is, the distance between the resist film patterns is
When the distance between the resist film patterns is 3 μm or more, use AZ1350 as a resist film, and perform deep ultraviolet exposure using a chrome mask for patterning. It is desirable to perform beam exposure or X-ray exposure.
この様にしてレジスト膜パターン１２を得る
と、レジスト膜が除去された部分はAu薄膜１１
が露出しており、そのAu薄膜を電極としてAu鍍
金を行なう。そうすると、第５図に示すようにレ
ジスト膜パターン１２の間にAu鍍金層１３が形
成される。この際のAu鍍金は、Au蒸着膜１１と
の密着性を良くするため、予めAuストライクメ
ツキを行つた後、Auメツキを行なう方法が望ま
しく、Auストライクメツキは例えばオーロシー
ド浴（日進化成製）を用い、Au濃度0.5〜1.0ｇ／
（常温）、電流密度1A／ｄm2で、メツキ時間は
約10秒とする。又、Auメツキは同じくオーロシ
ード浴を用い、Au濃度20ｇ／、液温55〜60℃、
PH4.7〜5.7の酸性浴で、白金陽極と電流密度
0.2A／ｄm2で12.5分通電する。そうすれば、Au
鍍金層１３の膜厚はストライクメツキ層と併せて
約1.5μｍに形成される。 When the resist film pattern 12 is obtained in this way, the portion where the resist film is removed is the Au thin film 11.
is exposed, and Au plating is performed using the Au thin film as an electrode. Then, as shown in FIG. 5, an Au plating layer 13 is formed between the resist film patterns 12. For the Au plating at this time, in order to improve the adhesion with the Au vapor deposited film 11, it is preferable to perform Au strike plating in advance and then perform Au plating. using Au concentration 0.5-1.0g/
(at room temperature), current density is 1 A/dm 2 , and plating time is about 10 seconds. Also, Au plating uses the same auro seed bath, Au concentration is 20g/, liquid temperature is 55-60℃,
Platinum anode and current density in acidic bath with PH4.7~5.7
Power on for 12.5 minutes at 0.2A/ dm2 . Then, Au
The thickness of the plating layer 13 together with the strike plating layer is approximately 1.5 μm.
次いで、第６図に示すように有機溶剤を用いて
レジスト膜１２を溶解除去した後、第７図に示す
ようにAu蒸着膜１１の膜厚だけAu層を全面エツ
チングする。エツチング方法としては、通常の湿
式法または乾式法の何れでもよいが、要すれば平
行平板型のリアクテイブスパツタエツチング法が
好ましい。これは基板面に対して垂直方向にエツ
チングされるため、Au鍍金パターン１３の側面
がエツチングされず、パターン幅が減少する恐れ
がない方法である。 Next, as shown in FIG. 6, the resist film 12 is dissolved and removed using an organic solvent, and then the entire Au layer is etched by the thickness of the Au vapor deposited film 11, as shown in FIG. The etching method may be either a normal wet method or a dry method, but if necessary, a parallel plate type reactive sputter etching method is preferred. This is a method in which etching is performed in a direction perpendicular to the substrate surface, so that the sides of the Au plating pattern 13 are not etched and there is no fear that the pattern width will be reduced.
次いで、この様にして形成したAu鍍金層１３
からなる導体コイル上に第８図に示すようにポリ
シルセスキオキサンを含む樹脂１４をスピンナー
で塗布し熱処理する。その膜厚は平面板上で約
1.4μｍとするが、このポリシルセスキオキサンを
含む樹脂組成物は下地との密着性がよくて、耐熱
性があり、リベリング性にすぐれた絶縁体であ
り、上記の如くにして導体コイルを高精度な角型
断面形状とすれば、導体コイル相互間の凹部にも
十分に充填されて、しかも表面が平坦となるレベ
リング性が必要で、その点でポリシルセスキオキ
サンを含む樹脂は最適なものである。又、耐熱性
は磁気ヘツド全体を融着ガラス７（第１図参照）
でコートする際に加熱されるので、是非耐性がな
ければならないが、その点でもポリシルセスキオ
キサンを含む樹脂は好適である。（参考：特願昭
54−077557、54−171005）次いで、第９図に示す
ように、更にその全面に同じくポリシルセスキオ
キサンを含む樹脂１５を約2μｍの膜厚に塗布す
るが、この様なコーテイング樹脂はSiO2やアル
ミナ（Al2O3）などの無機物を含んでも差し支え
ないし、又これらの無機物のみでもかまわない。 Next, the Au plating layer 13 formed in this way
As shown in FIG. 8, a resin 14 containing polysilsesquioxane is applied onto the conductor coil with a spinner and heat-treated. The film thickness is approximately
The resin composition containing this polysilsesquioxane has good adhesion to the base, is heat resistant, and is an insulator with excellent leveling properties. In order to create a highly accurate square cross-sectional shape, it is necessary to have leveling properties that sufficiently fill the recesses between the conductor coils and provide a flat surface, and resins containing polysilsesquioxane are optimal in this respect. It is something. In addition, for heat resistance, the entire magnetic head is made of fused glass 7 (see Figure 1).
Since it is heated during coating, it must be resistant, and resins containing polysilsesquioxane are suitable in this respect as well. (Reference: Akira Tokgan
54-077557, 54-171005) Next, as shown in FIG. 9, a resin 15 containing polysilsesquioxane is further coated to a thickness of about 2 μm on the entire surface, but such coating resin is SiO It may contain inorganic substances such as 2 and alumina (Al 2 O 3 ), or it may contain only these inorganic substances.
上記方法によつて、レジストはAZ−1350を使
用し、遠紫外線露光法にてレジスト膜パターンを
形成した場合、幅4.5μｍ、層厚さ1.4μｍ、相互の
間隔4.5μｍの導体コイルが精度良く形成され、又
レジストはPMMAを使用して電子ビーム露光方
法により、幅2.5μｍ、層厚さ1.4μｍ、間隔1.5μｍ
の導体コイルを作成して好結果が得られた。 By the above method, when using AZ-1350 resist and forming a resist film pattern by deep ultraviolet exposure method, conductor coils with a width of 4.5 μm, a layer thickness of 1.4 μm, and a mutual spacing of 4.5 μm are formed with high accuracy. The resist was formed using PMMA using an electron beam exposure method, with a width of 2.5 μm, a layer thickness of 1.4 μm, and a spacing of 1.5 μm.
Good results were obtained by creating a conductor coil.
以上の説明から判るように、本発明は導体コイ
ルを角型とする高精度な薄膜磁気ヘツドの製造方
法で、しかも導体コイルの絶縁体として、高性能
なポリシルセスキオキサンを含む樹脂を用いて、
一層品質のよい磁気ヘツドがえられ、信頼性が向
上すると共に、更に磁気ヘツドを小型にして、記
録装置の高密度化にも寄与するものである。 As can be seen from the above description, the present invention is a method for manufacturing a high-precision thin-film magnetic head with a square conductor coil, and uses a resin containing high-performance polysilsesquioxane as the insulator of the conductor coil. hand,
It is possible to obtain a magnetic head of higher quality and improve reliability, and it also contributes to making the magnetic head smaller and increasing the density of the recording device.
第１図は薄膜磁気ヘツドの断面図、第２図ない
し第９図は本発明にかかる製造方法の工程順断面
図である。図中、１は基板、２は磁性体パター
ン、３は絶縁層（例えばSiO2層）、４は厚い絶縁
層、５は導体コイル、６は上部磁性体パターン、
７は融着ガラス層、８は記録担体との対向面、１
０，１４，１５はポリシルセスキオキサンを含む
樹脂、１１はAuの薄い蒸着膜、１２はレジスト
膜（パターン）、１３はAu鍍金層（本発明の導体
コイル）を示す。
FIG. 1 is a cross-sectional view of a thin film magnetic head, and FIGS. 2 to 9 are cross-sectional views of the manufacturing method according to the present invention. In the figure, 1 is a substrate, 2 is a magnetic material pattern, 3 is an insulating layer (for example, two SiO layers), 4 is a thick insulating layer, 5 is a conductor coil, 6 is an upper magnetic material pattern,
7 is a fused glass layer; 8 is a surface facing the recording carrier; 1
0, 14, and 15 are resins containing polysilsesquioxane, 11 is a thin vapor-deposited film of Au, 12 is a resist film (pattern), and 13 is an Au plating layer (conductor coil of the present invention).
Claims (1)
性体パターン２上にヘツドギヤツプとなる所要膜
厚の絶縁層３を形成し、次いで積層形成される厚
い絶縁層４内に該磁性体パターン２に鎖交する導
体コイル５を分離形成し、該厚い絶縁層４と該絶
縁層３上に上部磁性体パターン６を形成した後、
記録担体との対向面８を研磨形成してなる薄膜磁
気ヘツドの製法であつて、基板１に磁性体パター
ン２を形成する工程と、該磁性体パターン２上に
ヘツドギヤツプとなる所要膜厚の絶縁層３を形成
する工程と、該絶縁層３上面にポリシルセスキオ
キサンを含む樹脂をスピン塗布して後熱処理しポ
リシルセスキオキサン層１０を形成する工程と、
該ポリシルセスキオキサン層１０上に蒸着法によ
り金薄膜１１を形成する工程と、該金薄膜１１上
に上記導体コイル５の膜厚と同等又はそれ以上の
膜厚のレジストパターン１２をホトリソグラフイ
法により形成する工程と、該金薄膜１１を電極と
して金鍍金を行い該レジストパターン１２の間に
金鍍金層１３を形成する工程と、該レジストパタ
ーン１２を除去する工程と、該金薄膜１１を完全
に除去できる程度に全面エツチングし金鍍金層よ
りなる該導体コイル５を形成する工程と、該導体
コイル５が形成された該ポリシルセスキオキサン
層１０上面にポリシルセスキオキサンを含む樹脂
をスピン塗布して後熱処理し導体コイル５相互間
の凹部を充填し表面が平坦なポリシルセスキオキ
サン層１４を形成する工程と、該ポリシルセスキ
オキサン層１４上面にポリシルセスキオキサンを
含む樹脂からなる絶縁層１５あるいは無機物から
なる絶縁層１５を形成し、該ポリシルセスキオキ
サン層１０と該ポリシルセスキオキサン層１４と
該絶縁層１５よりなる上記厚い絶縁層４を形成す
る工程と、該厚い絶縁層４上と該絶縁層３上に上
部磁性体パターン６を形成する工程と、記録担体
との対向面８を研磨する工程とを有することを特
徴とする薄膜磁気ヘツドの製造方法。 ２ 上記金鍍金層１３が金ストライクメツキを行
つた後金メツキを行う工程により形成される特許
請求の範囲第１項記載の薄膜磁気ヘツドの製造方
法。 ３ 上記全面エツチングが平行平板型のリアクテ
イブスパツタエツチングである特許請求の範囲第
１項記載の薄膜磁気ヘツドの製造方法。 ３ 上記ホトリソグラフイが電子ビーム露光、Ｘ
線露光、あるいは紫外線露光によるホトレジスト
の露光工程を有する特許請求の範囲第１項記載の
薄膜磁気ヘツドの製造方法。[Claims] 1. A magnetic material pattern 2 is formed on a substrate 1, an insulating layer 3 having a required thickness to form a head gap is formed on the magnetic material pattern 2, and then a thick insulating layer 4 to be laminated is formed. After separately forming a conductor coil 5 interlinking with the magnetic material pattern 2 and forming an upper magnetic material pattern 6 on the thick insulating layer 4 and the insulating layer 3,
A method for manufacturing a thin film magnetic head in which a surface 8 facing a recording carrier is formed by polishing, which includes the steps of forming a magnetic pattern 2 on a substrate 1, and forming an insulating film on the magnetic pattern 2 with a required thickness to form a head gap. a step of forming a layer 3; a step of spin-coating a resin containing polysilsesquioxane on the upper surface of the insulating layer 3 and performing a post-heat treatment to form a polysilsesquioxane layer 10;
A step of forming a thin gold film 11 on the polysilsesquioxane layer 10 by vapor deposition, and a step of forming a resist pattern 12 on the thin gold film 11 with a thickness equal to or greater than that of the conductor coil 5 by photolithography. a step of forming a gold plating layer 13 between the resist patterns 12 by performing gold plating using the gold thin film 11 as an electrode; a step of removing the resist pattern 12; and a step of removing the gold thin film 11. forming the conductor coil 5 made of a gold plating layer by etching the entire surface to such an extent that it can be completely removed; A step of spin-coating a resin and then heat-treating it to fill the recesses between the conductor coils 5 to form a polysilsesquioxane layer 14 with a flat surface; An insulating layer 15 made of a resin containing sand or an insulating layer 15 made of an inorganic substance is formed, and the thick insulating layer 4 made of the polysilsesquioxane layer 10, the polysilsesquioxane layer 14, and the insulating layer 15 is formed. a step of forming an upper magnetic material pattern 6 on the thick insulating layer 4 and the insulating layer 3; and a step of polishing the surface 8 facing the recording carrier. Head manufacturing method. 2. The method of manufacturing a thin film magnetic head according to claim 1, wherein the gold plating layer 13 is formed by performing gold strike plating and then gold plating. 3. The method of manufacturing a thin film magnetic head according to claim 1, wherein the entire surface etching is a parallel plate type reactive sputter etching. 3 The above photolithography is electron beam exposure,
2. A method for manufacturing a thin film magnetic head according to claim 1, which comprises a step of exposing a photoresist by line exposure or ultraviolet exposure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4744581A JPS57164413A (en) | 1981-03-31 | 1981-03-31 | Manufacture of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4744581A JPS57164413A (en) | 1981-03-31 | 1981-03-31 | Manufacture of thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57164413A JPS57164413A (en) | 1982-10-09 |
| JPH0447368B2 true JPH0447368B2 (en) | 1992-08-03 |
Family
ID=12775336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4744581A Granted JPS57164413A (en) | 1981-03-31 | 1981-03-31 | Manufacture of thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57164413A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201430A (en) * | 1985-03-04 | 1986-09-06 | Fujitsu Ltd | Silicone resin film for semiconductor device and formation of the same |
| US4849296A (en) * | 1987-12-28 | 1989-07-18 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia |
| US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
| US7009811B2 (en) * | 2002-07-11 | 2006-03-07 | International Business Machines Corporation | Surface planarization processes for the fabrication of magnetic heads and semiconductor devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4983868A (en) * | 1972-11-30 | 1974-08-12 |
-
1981
- 1981-03-31 JP JP4744581A patent/JPS57164413A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4983868A (en) * | 1972-11-30 | 1974-08-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57164413A (en) | 1982-10-09 |
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