JPH0446020A - Production of highly heat-resistant quartz glass - Google Patents
Production of highly heat-resistant quartz glassInfo
- Publication number
- JPH0446020A JPH0446020A JP15160190A JP15160190A JPH0446020A JP H0446020 A JPH0446020 A JP H0446020A JP 15160190 A JP15160190 A JP 15160190A JP 15160190 A JP15160190 A JP 15160190A JP H0446020 A JPH0446020 A JP H0446020A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- aluminum
- highly heat
- doping
- synthetic quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010419 fine particle Substances 0.000 claims abstract description 9
- 230000003301 hydrolyzing effect Effects 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 8
- 150000002367 halogens Chemical class 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 7
- 150000003377 silicon compounds Chemical class 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 238000007496 glass forming Methods 0.000 claims description 2
- 229910001385 heavy metal Inorganic materials 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 abstract description 16
- 239000011521 glass Substances 0.000 abstract description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- -1 silicon halides Chemical class 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01413—Reactant delivery systems
- C03B37/01433—Reactant delivery systems for delivering and depositing additional reactants as liquids or solutions, e.g. for solution doping of the porous glass preform
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1438—Reactant delivery systems for delivering and depositing additional reactants as liquids or solutions, e.g. solution doping of the article or deposit
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/32—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/80—Feeding the burner or the burner-heated deposition site
- C03B2207/85—Feeding the burner or the burner-heated deposition site with vapour generated from liquid glass precursors, e.g. directly by heating the liquid
- C03B2207/87—Controlling the temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野〕
本発明は高耐熱性合成石英ガラスの製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing highly heat-resistant synthetic quartz glass.
［従来の技術１
近年、半導体の高集積化は急速に進行している。これに
伴い集積度の高い半導体製造工程中の高温度の工程、例
えば酸化、アニール、活性化等の工程で使用されるプロ
セスチューブ、ボートなどの石英ガラス部材に求められ
る特性として不純物が歩留り低下の原因になることから
、高純度な石英ガラスが要求されている。従来の溶融石
英ガラスはその原料および製造工程由来による不純物が
多く高集積化された半導体製造工程での使用に適さない
。また、従来の合成石英ガラスは純度の面からは申し分
無いが、製造方法に由来する水分が多くＯＨ基として数
百ｐｐｍ含んでいる事から、従来の合成石英ガラスの徐
冷点を溶融石英ガラスの徐冷点と比較すると、約１５０
℃低いのが現状であり、高集積化された半導体製造の高
温工程での部材としては使用不可能であった。[Prior Art 1] In recent years, the integration of semiconductors has rapidly progressed. Along with this, impurities are required to have the characteristics required for quartz glass members such as process tubes and boats used in high-temperature processes in highly integrated semiconductor manufacturing processes, such as oxidation, annealing, and activation processes. Therefore, high purity quartz glass is required. Conventional fused silica glass contains many impurities derived from its raw materials and manufacturing process, and is not suitable for use in highly integrated semiconductor manufacturing processes. In addition, although conventional synthetic quartz glass is satisfactory in terms of purity, it contains a lot of water due to the manufacturing method, and contains several hundred ppm of OH groups. Compared to the annealing point of
At present, the temperature is too low, making it impossible to use it as a component in the high-temperature process of manufacturing highly integrated semiconductors.
〔発明の解決しようとする課題ｊ
本発明の目的は、従来の合成石英ガラスの有していた前
述の欠点を解決しようとするものである。[Problems to be Solved by the Invention j] An object of the present invention is to solve the above-mentioned drawbacks of conventional synthetic quartz glass.
［課題を解決するための手段１
本発明は、前述の問題点を解決すべ（なされたものであ
り、ガラス形成原料としてハロゲンを含む珪素化合物を
用いこれを加熱・加水分解し得られるシリカ微粒子を経
由して合成される石英ガラスの製造方法においてアルミ
ニウムを５〜４０ｐｐｍ ドープすることを特徴とする
高耐熱性合成石英ガラスの製造方法を提供するものであ
る。[Means for Solving the Problems 1] The present invention has been made to solve the above-mentioned problems, and uses a halogen-containing silicon compound as a glass forming raw material and heats and hydrolyzes it to produce silica fine particles. The present invention provides a method for producing highly heat-resistant synthetic quartz glass, which is characterized by doping 5 to 40 ppm of aluminum in the method for producing quartz glass synthesized via the method.
以下、本発明の詳細について説明する。本発明において
アルミニウムのドープ量は５〜４０ｐｐｍが望ましく、
５ ｐｐｍ未満では耐熱性を向上させる効果が小さく、
また、４０ｐｐｍを超えるとガラス内部に泡、ブツ等の
欠点が生成しやすくなり機械的強度等の低下や外観の不
良をきたすため好ましくない。The details of the present invention will be explained below. In the present invention, the doping amount of aluminum is preferably 5 to 40 ppm,
If it is less than 5 ppm, the effect of improving heat resistance is small;
Moreover, if it exceeds 40 ppm, defects such as bubbles and spots are likely to be generated inside the glass, resulting in a decrease in mechanical strength and poor appearance, which is not preferable.
アルミニウムをドープする方法としては、種々あるが、
その第一は、ハロゲン化珪素等を火炎中で加熱・加水分
解してシリカ微粒子を生成する工程や、火炎加水分解し
てシリカ微粒子の集合体を生成する工程中において、こ
れと同時に、塩化アルミニウム等の原料を窒素ガスをキ
ャリアガスとして前記火炎中に供給して導入する方法で
ある。この場合ガラス中のアルミニウム濃度の制御は塩
化アルミニウム蒸気発生器の温度、キャリアガス流量、
ハロゲン化珪素化合物供給量により行われる。ここで塩
化アルミニウムの供給配管は塩化アルミニウム蒸発器よ
り若干温度を高く制菌する事がガラス中のアルミニウム
濃度を安定化する上で重要である。このようにして得ら
ｔ’Ｌｌシリカ微粒子は例えば所望の形状に成型加工さ
れたのち焼結ガラス化することより透明な石英ガ、ラス
体とする。あるいは、前記アルミニウムドープされたシ
リカ微粒子が多孔質体等の集合体として得られる場合に
は例えばこれを約１４００”ｃで露点−６５℃の乾燥へ
υラムガス雰囲気中で透明ガラス化することにより水分
をＯＨ基として３０ｐｐＨ１以下に低減される。第二の
ドープ方法としては、ハロゲン化珪素等を酸水素炎中で
加熱加水分解し多孔質体とした後に透明ガラス化しない
温度領域（１２５０〜１３５０℃）で加熱処理した多孔
質体に、所定濃度の塩化アルミニウムのアルコール溶液
等を含浸し比較的低温で水蒸気を含む雰囲気中で処理し
たのち、１４００℃程度の温度域で乾燥ヘリュームガス
雰囲気中、透明ガラス化して透明石英ガラス体とする。There are various methods for doping aluminum, but
The first is that during the process of heating and hydrolyzing silicon halides etc. in a flame to generate silica fine particles, or during the process of flame hydrolysis to generate aggregates of silica fine particles, aluminum chloride, etc. In this method, raw materials such as the following are supplied and introduced into the flame using nitrogen gas as a carrier gas. In this case, the aluminum concentration in the glass is controlled by the temperature of the aluminum chloride steam generator, the carrier gas flow rate,
This is carried out depending on the amount of silicon halide compound supplied. Here, it is important to keep the temperature of the aluminum chloride supply piping slightly higher than the aluminum chloride evaporator in order to stabilize the aluminum concentration in the glass. The thus obtained t'Ll silica fine particles are formed into a desired shape, for example, and then sintered and vitrified to form a transparent quartz glass or glass body. Alternatively, if the aluminum-doped silica fine particles are obtained as an aggregate such as a porous body, the aluminum-doped silica particles may be dried at about 1400"C with a dew point of -65°C and transparent vitrified in a ram gas atmosphere to remove moisture. The second doping method is to heat and hydrolyze silicon halide etc. in an oxyhydrogen flame to form a porous body, and then dope it in a temperature range (1250 to 1350°C) where it does not become transparent and vitrified. ) is impregnated with an alcoholic solution of aluminum chloride at a predetermined concentration, treated at a relatively low temperature in an atmosphere containing water vapor, and then processed into transparent glass in a dry helium gas atmosphere at a temperature range of about 1400°C. to form a transparent quartz glass body.
このようなドープ材料は以上説明したものに限定される
ものではなく、アルミニウムのハロゲン化物や各種塩類
、有機アルミニウム等を使用することが可能である。さ
らに第三のドープ方法としては、ハロゲン化珪素等を加
水分解して得られるシリカ微粒子を捕集後通常の方法で
成型した多孔質体にも同様な方法でアルミニウムがドー
プされる。ここで、ガラス中のアルミニウムドープ量の
制御は、塩化アルミニウムの濃度、多孔質体の気孔率で
決定される。以上の様な方法により合成されたアルミニ
ウムを５〜４０ ｐｐＩ１１含む石英ガラスは徐冷点が
］２２０℃以上の高耐熱性合成石英ガラスであり、ハロ
ゲンを含む珪素化合物を出発原料として用いることから
、その純度を高めることにより、アルミニウム以外の重
金属およびアルカリ金属の含有量を１ ｐｐｍ以下とす
ることが可能である。Such doping materials are not limited to those described above, and aluminum halides, various salts, organic aluminum, etc. can be used. Furthermore, as a third doping method, aluminum is doped in a similar manner to a porous body obtained by collecting fine silica particles obtained by hydrolyzing silicon halide, etc., and then molding the porous body by a conventional method. Here, control of the amount of aluminum doped in the glass is determined by the concentration of aluminum chloride and the porosity of the porous body. The quartz glass containing 5 to 40 ppI11 of aluminum synthesized by the above method is a highly heat-resistant synthetic quartz glass with an annealing point of >220°C, and since a silicon compound containing a halogen is used as a starting material, By increasing its purity, it is possible to reduce the content of heavy metals other than aluminum and alkali metals to 1 ppm or less.
［作用］
本発明において、アルミニウムが耐熱性を高める作用は
必ずしも明確ではないが、アルミニウムが石英ガラス中
のシリコンと置換して融点の高い酸化アルミニウムが生
成し粘度を高めると考えられる。[Function] In the present invention, the effect of aluminum to increase heat resistance is not necessarily clear, but it is thought that aluminum replaces silicon in quartz glass to produce aluminum oxide with a high melting point and increase viscosity.
［実施例１ 以下、本発明の実施例について説明する。[Example 1 Examples of the present invention will be described below.
試薬四塩化珪素を酸水素火炎中で加熱・加水分解・堆積
させて形成させた多孔質体を空気中で１３３０℃、１時
間加熱処理し得られた嵩密度０、５ ｇｒ／ ｍＱの多
孔質体を直径６０ｍｍ長さ１５０ｎ＋ｍに切り出し、各
濃度の試薬１級無水塩化アルミニュームの試薬特級エチ
ルアルコール溶液を通常の方法で減圧含浸した。次に内
径８０ｍｍの不透明石英ガラス製炉心管を持つ管状炉に
セットし室温の飽和蒸気圧の水分を含んだ空気組成の窒
素、酸素混合ガスを毎分６ρ供給しながら１００℃で５
時間処理後１３５０℃まで２時間で昇温し併給ガスを露
点−６５℃以下の乾燥ヘリュームガスに切り替えさらに
１４００℃に昇温しその温度で２時間保持した。冷却後
取り出したところ直径３５ｍｍ長さ約１００ｍｍのアル
ミニウムドープ透明石英ガラスが得られた。この石英ガ
ラスから厚み２．５ｍｍ幅５．１１長さ６０．２ｍｍの
テストピースを切り出し透明石英ガラスチューブ内で空
気組成混合ガス雰囲気下１３００℃で２０分加熱処理後
１０００℃まで毎分８℃で冷却したテストピースをさら
に、１０００番の研磨剤で厚み２．４ｍｍ幅５．０ｍｍ
長さ６０．０ｍｍに研磨仕上げした。これをビームベン
ディング法により徐冷点（粘度１０”ｐｏｉｓｅの温度
）を測定した。さらに測定後のテストピースをフッ酸洗
浄後フッ酸分解し原子吸光法によりアルミニウム濃度と
さらに金属不純物を測定した。第１表に、石英ガラス中
のアルミニウム濃度、徐冷点および代表的な不純物量を
示す。A porous material with a bulk density of 0.5 gr/mQ was obtained by heating, hydrolyzing, and depositing the reagent silicon tetrachloride in an oxyhydrogen flame and heat-treating it in air at 1330°C for 1 hour. The body was cut into a piece having a diameter of 60 mm and a length of 150 nm+m, and was impregnated with a reagent special grade ethyl alcohol solution of reagent primary anhydrous aluminum chloride at various concentrations under reduced pressure in a conventional manner. Next, it was set in a tube furnace with an opaque quartz glass core tube with an inner diameter of 80 mm, and was heated at 100°C for 50 minutes while supplying nitrogen and oxygen mixed gas of air composition containing moisture at room temperature and saturated vapor pressure at 6 ρ per minute.
After the time treatment, the temperature was raised to 1350°C over 2 hours, and the co-supplied gas was switched to dry helium gas with a dew point of -65°C or less, and the temperature was further raised to 1400°C and maintained at that temperature for 2 hours. When taken out after cooling, an aluminum-doped transparent quartz glass having a diameter of 35 mm and a length of about 100 mm was obtained. A test piece with a thickness of 2.5 mm, a width of 5.11 mm, and a length of 60.2 mm was cut out from this quartz glass, heated in a transparent quartz glass tube at 1300°C for 20 minutes in an air-composition mixed gas atmosphere, and then heated at 8°C per minute to 1000°C. The cooled test piece was further polished with No. 1000 abrasive to a thickness of 2.4 mm and a width of 5.0 mm.
It was polished to a length of 60.0 mm. The annealing point (temperature at a viscosity of 10" poise) was measured using the beam bending method. After the measurement, the test piece was washed with hydrofluoric acid, decomposed with hydrofluoric acid, and the aluminum concentration and metal impurities were measured using atomic absorption spectrometry. Table 1 shows the aluminum concentration, annealing point, and typical impurity amounts in quartz glass.
さらに比較例としてアルミニウムを含まないエチルアル
コールを用いて同様に処理した石英ガラスの特性を示す
。又、これ等の石英ガラスは、Ｆ丁−ＩＲ法による水分
測定の結果いずれもＯＨ基が３０ｐｐ１１１以下であっ
た。Furthermore, as a comparative example, the characteristics of quartz glass treated in the same manner using ethyl alcohol that does not contain aluminum are shown. Further, as a result of moisture measurement using the F-D-IR method, the OH groups in all of these quartz glasses were 30 pp111 or less.
第１表
［発明の効果］
本発明は、従来の合成石英ガラスでは達成できなかった
低水分透明溜融石英ガラスと同等の徐冷点を持つ高耐熱
性合成石英ガラスを製造可能とする。Table 1 [Effects of the Invention] The present invention makes it possible to manufacture highly heat-resistant synthetic quartz glass having an annealing point equivalent to that of low-moisture transparent fused silica glass, which could not be achieved with conventional synthetic quartz glass.
鵠へ 主’１７．７１３ 栂村繁、ｍｍ’を名 一一一 Ｉ −１′〕To the Moe Lord’17.713 Shigeru Tsugamura, ``mm''' One eleven one I -1′〕
Claims (1)
用いこれを加熱・加水分解し得られるシリカ微粒子を経
由して合成される石英ガラスの製造方法において、アル
ミニウムを ５〜４０ｐｐｍドープすることを特徴とする高耐熱性合
成石英ガラスの製造方法。 ２、アルミニウムのドープを、ハロゲンを含む珪素化合
物を加水分解する工程と同時に行なうことを特徴とする
請求項１記載の高耐熱性合成石英ガラスの製造方法。 ３、アルミニウムをドープする工程が、ハロゲンを含む
珪素化合物を加熱加水分解し得られるシリカ微粒子を堆
積させて得られるシリカガラス多孔質体にドープする工
程であることを特徴とする請求項１記載の高耐熱性合成
石英ガラスの製造方法。 ４、アルミニウムをドープする工程が、ハロゲンを含む
珪素化合物を加熱加水分解して生成したシリカ微粒子を
成型して得られる集合体にドープする工程であることを
特徴とする請求項１記載の高耐熱性合成石英ガラスの製
造方法。 ５、徐冷点が１２２０℃以上であることを特徴とする請
求項１〜４のうちいずれか１項記載の 高耐熱性合成石英ガラス。 ６、石英ガラス中の水分量がＯＨ基として ３０ｐｐｍ以下であることを特徴とする請求項５記載の
高耐熱性合成石英ガラス。 ７、アルミニウム以外の重金属およびアルカリ金属類の
含有量の総計が１ｐｐｍ以下であることを特徴とする請
求項５記載の高耐熱性合成石英ガラス。[Claims] 1. A method for producing quartz glass which is synthesized via fine silica particles obtained by heating and hydrolyzing a silicon compound containing halogen as a glass forming raw material, doping aluminum at 5 to 40 ppm. A method for producing highly heat-resistant synthetic quartz glass. 2. The method for producing highly heat-resistant synthetic quartz glass according to claim 1, characterized in that doping with aluminum is carried out simultaneously with the step of hydrolyzing a halogen-containing silicon compound. 3. The step of doping aluminum is a step of doping a silica glass porous body obtained by depositing silica fine particles obtained by heating and hydrolyzing a halogen-containing silicon compound. A method for producing highly heat-resistant synthetic quartz glass. 4. High heat resistance according to claim 1, wherein the step of doping aluminum is a step of doping an aggregate obtained by molding silica fine particles produced by heating and hydrolyzing a silicon compound containing a halogen. A method for producing synthetic quartz glass. 5. The highly heat-resistant synthetic quartz glass according to any one of claims 1 to 4, which has an annealing point of 1220°C or higher. 6. The highly heat-resistant synthetic quartz glass according to claim 5, wherein the amount of water in the quartz glass is 30 ppm or less in terms of OH groups. 7. The highly heat-resistant synthetic quartz glass according to claim 5, wherein the total content of heavy metals other than aluminum and alkali metals is 1 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15160190A JP3114936B2 (en) | 1990-06-12 | 1990-06-12 | High heat resistant synthetic quartz glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15160190A JP3114936B2 (en) | 1990-06-12 | 1990-06-12 | High heat resistant synthetic quartz glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0446020A true JPH0446020A (en) | 1992-02-17 |
| JP3114936B2 JP3114936B2 (en) | 2000-12-04 |
Family
ID=15522097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15160190A Expired - Fee Related JP3114936B2 (en) | 1990-06-12 | 1990-06-12 | High heat resistant synthetic quartz glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3114936B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0627390A1 (en) * | 1993-06-01 | 1994-12-07 | General Electric Company | Viscosity tailoring of fused silica |
| US7082789B2 (en) | 2001-12-05 | 2006-08-01 | Toshiba Ceramics Co., Ltd. | Silica glass member for semiconductor and production method thereof |
-
1990
- 1990-06-12 JP JP15160190A patent/JP3114936B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0627390A1 (en) * | 1993-06-01 | 1994-12-07 | General Electric Company | Viscosity tailoring of fused silica |
| US7082789B2 (en) | 2001-12-05 | 2006-08-01 | Toshiba Ceramics Co., Ltd. | Silica glass member for semiconductor and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3114936B2 (en) | 2000-12-04 |
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