JPH0444812B2 - - Google Patents
Info
- Publication number
- JPH0444812B2 JPH0444812B2 JP59264130A JP26413084A JPH0444812B2 JP H0444812 B2 JPH0444812 B2 JP H0444812B2 JP 59264130 A JP59264130 A JP 59264130A JP 26413084 A JP26413084 A JP 26413084A JP H0444812 B2 JPH0444812 B2 JP H0444812B2
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- film
- layer
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052714 tellurium Inorganic materials 0.000 claims description 46
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000010408 film Substances 0.000 description 38
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920000298 Cellophane Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59264130A JPS61142541A (ja) | 1984-12-13 | 1984-12-13 | カルコゲナイド系酸化物からなる光記録媒体 |
EP85309089A EP0188100B1 (en) | 1984-12-13 | 1985-12-13 | Optical recording medium formed of chalcogen oxide and method for producing same |
DE8585309089T DE3582149D1 (de) | 1984-12-13 | 1985-12-13 | Aus chalkogenoxid gebildetes optisches aufzeichnungsmedium und verfahren zu dessen herstellung. |
US07/082,909 US4786538A (en) | 1984-12-13 | 1987-08-10 | Optical recording medium formed of chalcogenide oxide and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59264130A JPS61142541A (ja) | 1984-12-13 | 1984-12-13 | カルコゲナイド系酸化物からなる光記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61142541A JPS61142541A (ja) | 1986-06-30 |
JPH0444812B2 true JPH0444812B2 (enrdf_load_stackoverflow) | 1992-07-22 |
Family
ID=17398879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59264130A Granted JPS61142541A (ja) | 1984-12-13 | 1984-12-13 | カルコゲナイド系酸化物からなる光記録媒体 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61142541A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6323235A (ja) * | 1986-07-16 | 1988-01-30 | Matsushita Electric Ind Co Ltd | 光学式情報記録担体 |
JP2794467B2 (ja) * | 1989-10-04 | 1998-09-03 | 同和鉱業株式会社 | 光ディスクおよびその製造法 |
ATE465491T1 (de) * | 2003-12-01 | 2010-05-15 | Sony Corp | Prozess zur herstellung eines originaldatenträgers für einen optischen datenträger und originaldatenträger für einen optischen datenträger |
-
1984
- 1984-12-13 JP JP59264130A patent/JPS61142541A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61142541A (ja) | 1986-06-30 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |