JPH0443410B2 - - Google Patents

Info

Publication number
JPH0443410B2
JPH0443410B2 JP57207707A JP20770782A JPH0443410B2 JP H0443410 B2 JPH0443410 B2 JP H0443410B2 JP 57207707 A JP57207707 A JP 57207707A JP 20770782 A JP20770782 A JP 20770782A JP H0443410 B2 JPH0443410 B2 JP H0443410B2
Authority
JP
Japan
Prior art keywords
sapphire
heating
sample
vacuum
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57207707A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5999715A (ja
Inventor
Juichi Mikata
Tomoyasu Inoe
Masaharu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57207707A priority Critical patent/JPS5999715A/ja
Publication of JPS5999715A publication Critical patent/JPS5999715A/ja
Publication of JPH0443410B2 publication Critical patent/JPH0443410B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57207707A 1982-11-29 1982-11-29 真空中試料加熱装置 Granted JPS5999715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57207707A JPS5999715A (ja) 1982-11-29 1982-11-29 真空中試料加熱装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57207707A JPS5999715A (ja) 1982-11-29 1982-11-29 真空中試料加熱装置

Publications (2)

Publication Number Publication Date
JPS5999715A JPS5999715A (ja) 1984-06-08
JPH0443410B2 true JPH0443410B2 (enFirst) 1992-07-16

Family

ID=16544228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57207707A Granted JPS5999715A (ja) 1982-11-29 1982-11-29 真空中試料加熱装置

Country Status (1)

Country Link
JP (1) JPS5999715A (enFirst)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110917A (ja) * 1988-06-15 1990-04-24 Teru Kyushu Kk 熱処理装置

Also Published As

Publication number Publication date
JPS5999715A (ja) 1984-06-08

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