JPH0443226B2 - - Google Patents
Info
- Publication number
- JPH0443226B2 JPH0443226B2 JP59206639A JP20663984A JPH0443226B2 JP H0443226 B2 JPH0443226 B2 JP H0443226B2 JP 59206639 A JP59206639 A JP 59206639A JP 20663984 A JP20663984 A JP 20663984A JP H0443226 B2 JPH0443226 B2 JP H0443226B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial layer
- type epitaxial
- protective film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
- 
        - G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
 
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP20663984A JPS6184537A (ja) | 1984-10-02 | 1984-10-02 | 容量式センサの製造方法 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP20663984A JPS6184537A (ja) | 1984-10-02 | 1984-10-02 | 容量式センサの製造方法 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS6184537A JPS6184537A (ja) | 1986-04-30 | 
| JPH0443226B2 true JPH0443226B2 (OSRAM) | 1992-07-15 | 
Family
ID=16526684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP20663984A Granted JPS6184537A (ja) | 1984-10-02 | 1984-10-02 | 容量式センサの製造方法 | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS6184537A (OSRAM) | 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| WO2021153692A1 (ja) * | 2020-01-31 | 2021-08-05 | 住友金属鉱山株式会社 | 電磁波吸収粒子、電磁波吸収粒子分散液、電磁波吸収粒子の製造方法 | 
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer | 
| JP2822486B2 (ja) * | 1989-09-27 | 1998-11-11 | 株式会社デンソー | 感歪センサおよびその製造方法 | 
| JP2517467B2 (ja) * | 1990-10-05 | 1996-07-24 | 山武ハネウエル株式会社 | 静電容量式圧力センサ | 
| JPH04268725A (ja) * | 1991-02-25 | 1992-09-24 | Canon Inc | 力学量検出センサおよびその製造方法 | 
| DE19903380B4 (de) | 1998-02-02 | 2007-10-18 | Denso Corp., Kariya | Halbleitersensoren für eine physikalische Grösse und ihre Herstellungsverfahren | 
| JP4238437B2 (ja) | 1999-01-25 | 2009-03-18 | 株式会社デンソー | 半導体力学量センサとその製造方法 | 
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US4332000A (en) * | 1980-10-03 | 1982-05-25 | International Business Machines Corporation | Capacitive pressure transducer | 
| US4415948A (en) * | 1981-10-13 | 1983-11-15 | United Technologies Corporation | Electrostatic bonded, silicon capacitive pressure transducer | 
- 
        1984
        - 1984-10-02 JP JP20663984A patent/JPS6184537A/ja active Granted
 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| WO2021153692A1 (ja) * | 2020-01-31 | 2021-08-05 | 住友金属鉱山株式会社 | 電磁波吸収粒子、電磁波吸収粒子分散液、電磁波吸収粒子の製造方法 | 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS6184537A (ja) | 1986-04-30 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| US4553436A (en) | Silicon accelerometer | |
| US4071838A (en) | Solid state force transducer and method of making same | |
| JP3444639B2 (ja) | 一体型圧力変換器の製造方法および装置 | |
| US3858150A (en) | Polycrystalline silicon pressure sensor | |
| KR100265876B1 (ko) | 미세가공된고감도압력센서및음향트랜스듀서 | |
| US4016644A (en) | Methods of fabricating low pressure silicon transducers | |
| US4783237A (en) | Solid state transducer and method of making same | |
| US4188258A (en) | Process for fabricating strain gage transducer | |
| JP2582229B2 (ja) | シリコンダイアグラムおよびシリコン圧力センサーの製造方法 | |
| US4050049A (en) | Solid state force transducer, support and method of making same | |
| US5518951A (en) | Method for making thin film piezoresistive sensor | |
| US4605919A (en) | Piezoresistive transducer | |
| JPH0116030B2 (OSRAM) | ||
| US4287772A (en) | Strain gage transducer and process for fabricating same | |
| JP2560140B2 (ja) | 半導体装置 | |
| CN112284605B (zh) | 一种十字岛梁膜高温微压传感器芯片及制备方法 | |
| GB2128404A (en) | Piezoresistive transducer | |
| CN112284607A (zh) | 一种十字岛耐高温耐腐蚀压力传感器芯片及制备方法 | |
| JPH0443226B2 (OSRAM) | ||
| US5744725A (en) | Capacitive pressure sensor and method of fabricating same | |
| JP3536817B2 (ja) | 半導体力学量センサ及びその製造方法 | |
| JPS63308390A (ja) | 半導体圧力センサの製造方法 | |
| JP3567052B2 (ja) | 半導体のマイクロマシニング方法 | |
| JPH10239345A (ja) | 半導体センサ | |
| JPH1144705A (ja) | 半導体加速度センサおよびその製造方法 |