JPH0442869B2 - - Google Patents

Info

Publication number
JPH0442869B2
JPH0442869B2 JP58087173A JP8717383A JPH0442869B2 JP H0442869 B2 JPH0442869 B2 JP H0442869B2 JP 58087173 A JP58087173 A JP 58087173A JP 8717383 A JP8717383 A JP 8717383A JP H0442869 B2 JPH0442869 B2 JP H0442869B2
Authority
JP
Japan
Prior art keywords
pulse
photoelectric conversion
phase
shift register
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58087173A
Other languages
Japanese (ja)
Other versions
JPS59212077A (en
Inventor
Juji Matsuda
Sumio Terakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58087173A priority Critical patent/JPS59212077A/en
Publication of JPS59212077A publication Critical patent/JPS59212077A/en
Publication of JPH0442869B2 publication Critical patent/JPH0442869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745Circuitry for generating timing or clock signals

Description

【発明の詳細な説明】 産業上の利用分野 本発明は固体撮像装置の駆動方法、特に、イン
タレース回路付き固体撮像装置の駆動方法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for driving a solid-state imaging device, and particularly to a method for driving a solid-state imaging device with an interlaced circuit.

従来例の構成とその問題点 近年、固体撮像素子の開発が進み、性能の点か
ら見て撮像管に匹敵ないし、上回るものが実用化
されつつある。
Conventional configurations and their problems In recent years, the development of solid-state image sensors has progressed, and devices that are comparable to or even superior to image pickup tubes in terms of performance are being put into practical use.

以下、図面を参照しながら、インタレース回路
付き固体撮像装置の従来の駆動方法について説明
を行なう。
Hereinafter, a conventional method for driving a solid-state imaging device with an interlace circuit will be explained with reference to the drawings.

第1図はインタレース回路付き固体撮像装置の
概略を示す回路図の一例である。第1図において
1は光電変換用のホトダイオード、2はホトダイ
オード1に蓄積された光信号を読み出すための垂
直読み出しスイツチ用MOS型FET、3は垂直読
み出しスイツチ用MOS型FET2のゲートを各行
ごとに接続した垂直走査パルス入力線、4は垂直
方向に順次パルスをシフトする垂直シフトレジス
タ、5は垂直シフトレジスタ4で発生したパルス
を垂直走査パルス入力線3の偶数列もしくは奇数
列に振り分け印加するインタレース回路、6は垂
直読み出しスイツチ用MOS型FET2の各ドレイ
ンを列ごとに共通接続した垂直伝送線、7は水平
転送用水平シフトレジスタである。
FIG. 1 is an example of a circuit diagram schematically showing a solid-state imaging device with an interlace circuit. In Figure 1, 1 is a photodiode for photoelectric conversion, 2 is a MOS type FET for a vertical readout switch to read out the optical signal accumulated in the photodiode 1, and 3 is a MOS type FET for a vertical readout switch, whose gates are connected for each row. 4 is a vertical shift register that sequentially shifts pulses in the vertical direction; 5 is an interlace that distributes and applies the pulses generated in the vertical shift register 4 to even or odd columns of the vertical scanning pulse input line 3; In the circuit, 6 is a vertical transmission line in which the drains of MOS type FETs 2 for vertical readout switches are commonly connected for each column, and 7 is a horizontal shift register for horizontal transfer.

第2図は前記インタレース回路5を示す回路図
である。同図において、21はフイールド切り換
え用パルスF1の入力端子、22はフイールド切
り換え用パルスF2の入力端子、23は垂直シフ
トレジスタ駆動用パルスV1の入力端子、24は
垂直シフトレジスタ駆動用パルスV2の入力端子
である。
FIG. 2 is a circuit diagram showing the interlace circuit 5. As shown in FIG. In the figure, 21 is an input terminal for field switching pulse F1, 22 is an input terminal for field switching pulse F2, 23 is an input terminal for vertical shift register driving pulse V1, and 24 is an input terminal for vertical shift register driving pulse V2. It is a terminal.

以上のように構成されたインタレース回路付固
体撮像装置について、以下その動作について説明
する。
The operation of the solid-state imaging device with interlace circuit configured as described above will be described below.

第3図はインタレース回路付き固体撮像装置の
従来の駆動パルスのタイミングを示す図である。
通常NTSC信号を得るために垂直方向にインタレ
ース動作が必要となる。そのため、第3図に示す
ように垂直パルス入力線を一行おきにインタレー
ス動作させている。すなわち、第1フイールドで
は垂直走査パルス入力線3のA,C,E…の順
に、第2フイールドではB,D,F…の順に第3
図のVA〜VFに示すパルスが出力される。
FIG. 3 is a diagram showing the timing of conventional drive pulses for a solid-state imaging device with an interlace circuit.
Normally, an interlace operation is required in the vertical direction to obtain an NTSC signal. Therefore, as shown in FIG. 3, the vertical pulse input lines are interlaced every other row. That is, in the first field, A, C, E, etc. of the vertical scanning pulse input line 3 are input in the order, and in the second field, the third line is input in the order of B, D, F, etc.
Pulses shown at V A to V F in the figure are output.

しかし、上記のような従来の駆動パルスタイミ
ングでは、各ホトダイオードの読み出しサイクル
が1フイールドおきとなり、蓄積時間が2フイー
ルドになる。そのため、等価残像と呼ばれる残像
現像が発生し、移動物体の撮像等において残像が
目立ち実用上大きな問題となる。
However, with the conventional drive pulse timing as described above, the readout cycle of each photodiode is every other field, and the storage time is two fields. Therefore, afterimage development called equivalent afterimage occurs, and the afterimage becomes noticeable when imaging a moving object, etc., and poses a serious problem in practical use.

発明の目的 本発明は上記欠点に鑑み、等価残像を除去する
ことのできる、固体撮像装置の駆動方法を提供す
るものである。
OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention provides a method for driving a solid-state imaging device that can eliminate equivalent afterimages.

発明の構成 この目的を達成するために本発明の固体撮像装
置の駆動方法は、2次元状に配列された光電変換
部と、垂直駆動用の第1および第2パルス印加端
子を持ち前記光電変換部に蓄積された光信号電荷
を垂直方向に読み出す垂直シフトレジスタ部と、
第3および第4パルスの印加端子を持ち前記垂直
シフトレジスタより発生する出力パルスを前記光
電変換素子部の偶数列もしくは奇数列に振り分け
るインタレース回路部と、前記光信号電荷を水平
方向に転送する水平シフトレジスタ部とを備えた
固体撮像装置を駆動するに際し、水平帰線期間に
前記第1パルス印加端子に2つの連続した位相の
第1、第2のパルスを印加し、前記第2パルス印
加端子に第1フイールドでは前記第1のパルスよ
り進んだ位相あるいは前記第2のパルスより遅れ
た位相、第2フイールドでは前記第1、第2のパ
ルス間に位相を有する第3のパルスを印加し、前
記第3パルス印加端子に前記第1のパルスに重な
る位相の第4のパルスを印加し、前記第4パルス
印加端子に前記第2のパルスに重なる第5のパル
スを印加するようにするものである。したがつ
て、本発明によれば、ホトダイオードの蓄積時間
も1フイールドになつて等価残像を除去して固体
撮像装置を駆動することができる。
Composition of the Invention In order to achieve this object, a method for driving a solid-state imaging device according to the present invention includes a two-dimensionally arranged photoelectric conversion section and first and second pulse application terminals for vertical driving. a vertical shift register section that vertically reads out optical signal charges accumulated in the section;
an interlace circuit section having third and fourth pulse application terminals and distributing output pulses generated from the vertical shift register to even or odd columns of the photoelectric conversion element section; and an interlace circuit section that transfers the optical signal charge in the horizontal direction. When driving a solid-state imaging device including a horizontal shift register section, two consecutive phase first and second pulses are applied to the first pulse application terminal during the horizontal retrace period, and the second pulse is applied. A third pulse having a phase leading from the first pulse or a phase behind the second pulse in the first field and having a phase between the first and second pulses in the second field is applied to the terminal. , a fourth pulse having a phase that overlaps with the first pulse is applied to the third pulse application terminal, and a fifth pulse that overlaps with the second pulse is applied to the fourth pulse application terminal. It is. Therefore, according to the present invention, the storage time of the photodiode becomes one field, and the equivalent afterimage can be removed to drive the solid-state imaging device.

実施例の説明 以下本発明の第1の実施例について、図面を参
照しながら説明する。第4図は本発明の第1の実
施例における固体撮像装置の各パルスのタイミン
グと各垂直走査パルス入力線に印加される走査パ
ルスのタイミングを示すものである。
DESCRIPTION OF EMBODIMENTS A first embodiment of the present invention will be described below with reference to the drawings. FIG. 4 shows the timing of each pulse of the solid-state imaging device and the timing of the scanning pulse applied to each vertical scanning pulse input line in the first embodiment of the present invention.

まず第1フイールドの第1水平帰線期間では、
パルスV′2とパルスF′1の印加によつて、垂直走査
パルス入力線3のBにパルスV′Bが出力される。
また、同一水平帰線期間内にパルスV′2とパルス
F′2の印加で、前記垂直走査パルス入力線3のA
にパルスV′Aが出力される。同じ水平帰線期間内
の次のタイミングでパルスV′1が印加され垂直シ
フトレジスタ4は1段シフトする(この時の垂直
シフトレジスタ4の出力パルスは、インタレース
回路5に接続していないので、パルスV1は垂直
走査入力線に印加されない。)次の水平帰線期間
も同様に垂直走査パルス入力線3のDおよびCに
パルスV′D,V′Cが印加され、垂直シフトレジスタ
が1段シフトし、順次垂直パルス入力線に印加し
ていく。更に、次の水平帰線期間では、垂直走査
パルス入力線3のDおよびEにパルスV′D,V′E
印加され、以後同様に印加される。以上のように
本実施例によれば、1水平帰線期間内に2行読み
出すことにより、各ホトダイオードの光信号を各
フイールド毎に読み出すことができ、各ホトダイ
オードの蓄積時間が1フイールドになる。したが
つて、等価残像を除去することができる。さらに
同一水平帰線期間内で読み出される行の組み合わ
せは、各フイールドで異なり(第1フイールドで
BとA,DとC、第2フイールドでBとC,Dと
E)垂直解像度の劣化は少なくできる。
First, in the first horizontal retrace period of the first field,
By applying pulse V' 2 and pulse F' 1 , pulse V' B is output to B of vertical scanning pulse input line 3.
In addition, pulse V′ 2 and pulse
By applying F'2 , the vertical scanning pulse input line 3 is
A pulse V′ A is output. At the next timing within the same horizontal retrace period, pulse V' 1 is applied and the vertical shift register 4 shifts by one stage (the output pulse of the vertical shift register 4 at this time is not connected to the interlacing circuit 5, so , pulse V 1 is not applied to the vertical scanning input line.) During the next horizontal retrace period, pulses V' D and V' C are similarly applied to D and C of the vertical scanning pulse input line 3, and the vertical shift register is activated. The pulses are shifted by one stage and applied to the vertical pulse input lines sequentially. Furthermore, in the next horizontal retrace period, pulses V' D and V' E are applied to D and E of the vertical scanning pulse input line 3, and the same applies thereafter. As described above, according to this embodiment, by reading two lines within one horizontal retrace period, the optical signal of each photodiode can be read out for each field, and the storage time of each photodiode becomes one field. Therefore, equivalent afterimages can be removed. Furthermore, the combination of lines read within the same horizontal retrace period is different for each field (B and A, D and C in the first field, B and C, D and E in the second field), and there is little deterioration in vertical resolution. can.

次に、本発明の第2の実施例について図面を参
照しながら説明する。
Next, a second embodiment of the present invention will be described with reference to the drawings.

第5図は本発明の第2の実施例を示すインタレ
ース回路付き固体撮像装置のパルスのタイミング
図である。同図において、パルスV′1およびパル
スV′2のタイミングは第4図と同様である。第4
図と構成の異なるのはパルスF″1とパルスF″2のタ
イミングである。第4図のパルスのタイミングで
は、垂直走査パルス入力線3に読み出される順序
がフイールドごとに異なるが(第1フイールドで
DからC、第2フイールドでCからD)、第5図
に示したようなF″1,F″2パルスの位相をフイール
ドごとに変える事により、位相を同一にすること
ができる。従つて、第5図に示すようにパルス
V″A〜V″Eを得ることができる。なお第4図に示
すパルスV′1は第1フイールドの位相が、パルス
V′2より遅れた位相にあるが、パルスV′2より進ん
だ位相であつてもよい。
FIG. 5 is a pulse timing diagram of a solid-state imaging device with an interlaced circuit showing a second embodiment of the present invention. In this figure, the timing of pulse V' 1 and pulse V' 2 is the same as in FIG. Fourth
The difference between the diagram and the configuration is the timing of pulse F″ 1 and pulse F″ 2 . In the pulse timing shown in FIG. 4, the order in which the pulses are read out to the vertical scanning pulse input line 3 differs depending on the field (from D to C in the first field, and from C to D in the second field), but as shown in FIG. By changing the phase of the F″ 1 and F″ 2 pulses for each field, the phases can be made the same. Therefore, as shown in Figure 5, the pulse
V″ A to V″ E can be obtained. In addition, the phase of the first field of pulse V′ 1 shown in Fig. 4 is equal to that of the pulse
Although the phase is behind the pulse V' 2 , it may be in a phase that is ahead of the pulse V' 2 .

発明の効果 本発明の固体撮像装置の駆動方法によれば、等
価残像の問題を解決することができ、その実用的
効果は大なるものがある。
Effects of the Invention According to the method for driving a solid-state imaging device of the present invention, the problem of equivalent afterimages can be solved, and its practical effects are significant.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はインタレース回路付き固体撮像装置の
概略を示す回路図、第2図はインタレース回路を
示す回路図、第3図は従来装置の駆動パルスのタ
イミングを示す図、第4図は本発明の第1実施例
の各パルスのタイミングを示す図、第5図は本発
明の第2実施例の各パルスのタイミングを示す図
である。 1…ホトダイオード、2…垂直スイツチ用
MOS型FET、3…垂直信号出力線、4…垂直走
査回路、5…インタレース回路、6…水平信号出
力線、7…水平転送回路。
Fig. 1 is a circuit diagram showing an outline of a solid-state imaging device with an interlace circuit, Fig. 2 is a circuit diagram showing an interlace circuit, Fig. 3 is a diagram showing the timing of drive pulses of a conventional device, and Fig. 4 is a diagram of the present invention. FIG. 5 is a diagram showing the timing of each pulse in the first embodiment of the invention, and FIG. 5 is a diagram showing the timing of each pulse in the second embodiment of the invention. 1...Photodiode, 2...For vertical switch
MOS type FET, 3...Vertical signal output line, 4...Vertical scanning circuit, 5...Interlace circuit, 6...Horizontal signal output line, 7...Horizontal transfer circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 光電変換要素が2次元状に配列された光電変
換素子部と、前記光電変換要素から光信号電荷を
列方向へ読み出すための駆動信号を発生する垂直
シフトレジスタ部と、前記垂直シフトレジスタ部
からの駆動信号を前記光電変換素子部の偶数行も
しくは奇数行の光電変換要素へ振り分けて印加す
るためのインタレース回路部と、前記光電変換素
子部の列方向から読み出された光信号電荷を水平
方向へ転送するための水平シフトレジスタ部とを
有する固体撮像装置の駆動の際に、フイールド毎
の水平帰線期間に、前記垂直シフトレジスタ部か
ら2つの連続した位相の第1および第2のパルス
でなるパルス列の駆動信号を発生させると同時
に、前記インタレース回路部を一方が前記第1の
パルスと同相で、他方が前記第2のパルスと同相
でなる、振り分け用の第3、第4のパルスで動作
させることにより、前記垂直シフトレジスタ部か
らの駆動信号を、前記インタレース回路部を介し
て、前記光電変換素子部に与えるとともに、前記
垂直シフトレジスタ部を、第1フイールドで前記
第1のパルスより進んだ位相または前記第2のパ
ルスより遅れた位相の、第2フイールドで前記第
1、第2のパルスの間の位相の第5のパルスによ
り、それぞれ、シフト動作させて、各水平帰線期
間に2行の前記光電変換要素から光信号電荷を読
みだすことを特徴とする固体撮像装置の駆動方
法。
1. A photoelectric conversion element section in which photoelectric conversion elements are arranged in a two-dimensional manner, a vertical shift register section that generates a drive signal for reading optical signal charges from the photoelectric conversion elements in the column direction, and a an interlacing circuit section for distributing and applying drive signals to photoelectric conversion elements in even-numbered rows or odd-numbered rows of the photoelectric conversion element section; When driving a solid-state imaging device having a horizontal shift register section for data transfer in the direction, two consecutive phase first and second pulses are sent from the vertical shift register section during the horizontal retrace period for each field. At the same time, the interlacing circuit section is connected to third and fourth pulse train driving signals for distributing, one of which is in phase with the first pulse, and the other with the same phase with the second pulse. By operating with a pulse, a drive signal from the vertical shift register section is applied to the photoelectric conversion element section via the interlace circuit section, and the vertical shift register section is operated in the first field in the first field. A shift operation is performed by a fifth pulse in a phase between the first and second pulses in the second field, which has a phase leading from the first pulse or a phase behind the second pulse. A method for driving a solid-state imaging device, comprising reading optical signal charges from two rows of the photoelectric conversion elements during a retrace period.
JP58087173A 1983-05-17 1983-05-17 Driving method of solid-state image pickup device Granted JPS59212077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58087173A JPS59212077A (en) 1983-05-17 1983-05-17 Driving method of solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58087173A JPS59212077A (en) 1983-05-17 1983-05-17 Driving method of solid-state image pickup device

Publications (2)

Publication Number Publication Date
JPS59212077A JPS59212077A (en) 1984-11-30
JPH0442869B2 true JPH0442869B2 (en) 1992-07-14

Family

ID=13907591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58087173A Granted JPS59212077A (en) 1983-05-17 1983-05-17 Driving method of solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS59212077A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866766U (en) * 1981-10-28 1983-05-06 株式会社日立製作所 solid-state image sensor

Also Published As

Publication number Publication date
JPS59212077A (en) 1984-11-30

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