JPS5866766U

JPS5866766U - solid-state image sensor

Info

Publication number: JPS5866766U
Application number: JP1981160804U
Authority: JP
Inventors: 小池　紀雄; 俊久塚田; 馬路　徹
Original assignee: 株式会社日立製作所
Priority date: 1981-10-28
Filing date: 1981-10-28
Publication date: 1983-05-06

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は従来のインタレース回路により構成された固体
撮像素子のブロック図およびタイムチャート、第２図は
本考案のインタレース回路により構成した固体撮像素子
の１実施例のブロック図およびタイムチャート、第３図
および第４図は第２図とは異なるインタレース回路によ
り構成した固体撮像素子の実施例のブロック図およびタ
イムチャート、第５図は第２図〜第４図とは異なるイン
タレース回路により構成した固体撮像素子の実施例のブ
ロック図、また、第６図および第７図はそれぞれ第２図
および第３図に記載したインクレース回路の出力に電圧
上昇回路を接続した場合の固体撮像素子を示す実施例の
ブロック図である。１・・・水平走査回路、２・・・水平スイッチ、３・・
・垂直走査回路、４−１．４−２．　４−３．　４−４
・・・ＭＯＳ）ランジスタ、５・・・インタレース回路
、６・・・垂直スイッチ、７・・・光ダイオード、８．
　８’・・・インクレース用スイッチ、９・・・光電変
換アレ一部、１０・・・初段入力、１１．１２・・・フ
ィールド・パルスにより開閉するスイッチ、１３．１３
’・・・Ｗ圧上昇回路、■：・・第１フィールド期間、
■・・・第２フィールド期間。FIG. 1 is a block diagram and time chart of a solid-state image sensor configured with a conventional interlace circuit, and FIG. 2 is a block diagram and time chart of an embodiment of a solid-state image sensor configured with an interlace circuit of the present invention. 3 and 4 are block diagrams and time charts of an embodiment of a solid-state image sensor configured with an interlace circuit different from that shown in FIG. 2, and FIG. 5 is an interlace circuit different from those shown in FIGS. 2 to 4. A block diagram of an embodiment of a solid-state imaging device constructed by the above, and FIGS. 6 and 7 show solid-state imaging when a voltage increase circuit is connected to the output of the increment circuit shown in FIGS. 2 and 3, respectively. FIG. 2 is a block diagram of an embodiment showing elements. 1...Horizontal scanning circuit, 2...Horizontal switch, 3...
- Vertical scanning circuit, 4-1.4-2. 4-3. 4-4
MOS) transistor, 5... Interlaced circuit, 6... Vertical switch, 7... Photodiode, 8.
8'... Switch for ink race, 9... Part of photoelectric conversion array, 10... Initial stage input, 11.12... Switch opened and closed by field pulse, 13.13
'...W pressure increase circuit, ■:...1st field period,
■...Second field period.

Claims

[Scope of utility model registration request]

Photoelectric conversion elements two-dimensionally arranged on the same semiconductor substrate, a group of horizontal and vertical switches for selecting the photoelectric conversion elements, a horizontal scanning circuit and a vertical scanning circuit for opening and closing the switches, and 2 at the same time in different combinations for each field by field switching pulses
A solid-state image sensor having an incremental scanning function that selects horizontal scanning lines one by one has at least two of the vertical scanning circuits described above, and one vertical scanning circuit selects each set of two predetermined horizontal scanning lines. A solid-state image pickup device, wherein the solid-state image sensor is sequentially selected, and another vertical scanning circuit sequentially selects each set of two horizontal scanning lines vertically shifted by one column from the predetermined horizontal scanning line.