JPH0441175Y2 - - Google Patents

Info

Publication number
JPH0441175Y2
JPH0441175Y2 JP1987083154U JP8315487U JPH0441175Y2 JP H0441175 Y2 JPH0441175 Y2 JP H0441175Y2 JP 1987083154 U JP1987083154 U JP 1987083154U JP 8315487 U JP8315487 U JP 8315487U JP H0441175 Y2 JPH0441175 Y2 JP H0441175Y2
Authority
JP
Japan
Prior art keywords
flow channel
holding table
substrate
vapor phase
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1987083154U
Other languages
English (en)
Japanese (ja)
Other versions
JPS63192460U (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987083154U priority Critical patent/JPH0441175Y2/ja
Publication of JPS63192460U publication Critical patent/JPS63192460U/ja
Application granted granted Critical
Publication of JPH0441175Y2 publication Critical patent/JPH0441175Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP1987083154U 1987-05-29 1987-05-29 Expired JPH0441175Y2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987083154U JPH0441175Y2 (enrdf_load_stackoverflow) 1987-05-29 1987-05-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987083154U JPH0441175Y2 (enrdf_load_stackoverflow) 1987-05-29 1987-05-29

Publications (2)

Publication Number Publication Date
JPS63192460U JPS63192460U (enrdf_load_stackoverflow) 1988-12-12
JPH0441175Y2 true JPH0441175Y2 (enrdf_load_stackoverflow) 1992-09-28

Family

ID=30936483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987083154U Expired JPH0441175Y2 (enrdf_load_stackoverflow) 1987-05-29 1987-05-29

Country Status (1)

Country Link
JP (1) JPH0441175Y2 (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691012B2 (ja) * 1983-11-25 1994-11-14 古河電気工業株式会社 半導体薄膜気相成長装置

Also Published As

Publication number Publication date
JPS63192460U (enrdf_load_stackoverflow) 1988-12-12

Similar Documents

Publication Publication Date Title
JP2005526394A (ja) Ｍｏｃｖｄ反応炉用サセプタ
JPH05238881A (ja) ガスソース分子線エピタキシー装置
US4651674A (en) Apparatus for vapor deposition
JPH0234166B2 (enrdf_load_stackoverflow)
JPH0441175Y2 (enrdf_load_stackoverflow)
JP4364378B2 (ja) 横型気相成長装置
JP3955392B2 (ja) 結晶成長装置及び結晶成長方法
JPS607378B2 (ja) Ｃｖｄ装置
TWI240310B (en) Method for forming thin films of semiconductor devices
JPH0512279Y2 (enrdf_load_stackoverflow)
JP3495501B2 (ja) 気相成長装置
JPH0234909A (ja) 化合物半導体気相成長方法および装置
JPH0345957Y2 (enrdf_load_stackoverflow)
JPH07243044A (ja) ダイヤモンドの気相合成法
JPH0235814Y2 (enrdf_load_stackoverflow)
JP3778992B2 (ja) 窒化ガリウム系半導体薄膜製造用気相成長装置のヒーター
JPH0551294A (ja) 気相成長装置
JPH10223620A (ja) 半導体製造装置
JPH01123413A (ja) 気相成長装置
JPH10158100A (ja) 気相成長装置
JP2543754Y2 (ja) 人工ダイヤモンド析出装置
JPH0322429A (ja) 化学的気相成長装置
JPH04173977A (ja) 気相成長装置用支持台
JP2872904B2 (ja) ガスソース分子線エピタキシー装置
JPH10167897A (ja) ＧａＮ膜の成長方法