JPH0440869B2 - - Google Patents
Info
- Publication number
- JPH0440869B2 JPH0440869B2 JP9543086A JP9543086A JPH0440869B2 JP H0440869 B2 JPH0440869 B2 JP H0440869B2 JP 9543086 A JP9543086 A JP 9543086A JP 9543086 A JP9543086 A JP 9543086A JP H0440869 B2 JPH0440869 B2 JP H0440869B2
- Authority
- JP
- Japan
- Prior art keywords
- synthetic resin
- optical semiconductor
- mold
- diffusing agent
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920003002 synthetic resin Polymers 0.000 claims description 16
- 239000000057 synthetic resin Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、光半導体素子の製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method of manufacturing an optical semiconductor element.
（従来の技術）
従来の光半導体素子は、通常発光部が透明の合
成樹脂でモールドされ、かつこの合成樹脂中には
拡散剤が混入される。拡散剤としては、シリカガ
ラスビーズやガラス粉体等が用いられているが、
シリカを用いた場合には、均一の拡散は得られる
が、光度が低下する欠点があり、ガラスビーズの
場合には、均一の拡散を得ることは難しく、かつ
高度も低下し、一方ガラス粉体の場合には、拡散
効果が小さく、大きな拡散効果を得ようとすると
混入量が多くなつて光度が落ちる等の欠点があ
る。(Prior Art) In a conventional optical semiconductor element, the light emitting part is usually molded with a transparent synthetic resin, and a diffusing agent is mixed into the synthetic resin. Silica glass beads, glass powder, etc. are used as diffusing agents.
When using silica, uniform diffusion can be obtained, but the disadvantage is that the luminous intensity decreases.When using glass beads, it is difficult to obtain uniform diffusion and the altitude also decreases; In this case, the diffusion effect is small, and if you try to obtain a large diffusion effect, the amount of contamination increases and the luminous intensity decreases.
（発明が解決しようとする問題点）
この発明は、上記従来の問題点を解決するため
になされ、拡散効果にすぐれしかも光度の低下を
来たさないようにした拡散剤混入タイプ光半導体
素子の製造方法を提供しようとするものである。(Problems to be Solved by the Invention) The present invention was made in order to solve the above-mentioned conventional problems, and provides a diffusing agent-containing type optical semiconductor element which has an excellent diffusion effect and does not cause a decrease in luminous intensity. The purpose is to provide a manufacturing method.
（問題点を解決するための手段）
このような問題点を解決する手段として、この
発明は、薄板状で表面に凹凸を有するガラス小片
を拡散剤としてモールド用の合成樹脂に混入し、
この合成樹脂を成形型に注入し、光半導体を先端
部にマウントしたリードフレームを前記成形型中
セツトすると共に、前記合成樹脂を硬化させて発
光部を形成することを要旨とするものである。(Means for Solving the Problems) As a means for solving the above problems, the present invention mixes thin glass pieces having an uneven surface as a diffusing agent into a synthetic resin for molding.
The gist of this method is to inject this synthetic resin into a mold, set a lead frame with an optical semiconductor mounted on the tip in the mold, and then harden the synthetic resin to form a light emitting section.
（実施例）
以下、図示の実施例によつてこの発明を具体的
に説明する。１は鱗形薄板状で表面に凹凸を有す
るガラス小片であり、エポキシ等のモールド用の
合成樹脂２に拡散剤として混入し、モールド成形
用の型３に注入される。４はリードフレーム５の
先端部に取付けられたチツプであり、他方のリー
ドフレーム６にワイヤー７でボンデイングされて
いる。このようにチツプをマウントしたリードフ
レーム５，６は前記成形型３に挿入セツトされ、
この成形型に注入された合成樹脂２を加熱硬化す
ることにより光半導体素子８が形成される。(Example) Hereinafter, the present invention will be specifically explained with reference to illustrated examples. Reference numeral 1 denotes a small piece of glass having a scale-shaped thin plate shape and having an uneven surface, which is mixed as a diffusing agent into a synthetic resin 2 for molding such as epoxy, and is injected into a mold 3 for molding. A chip 4 is attached to the tip of the lead frame 5, and is bonded to the other lead frame 6 with a wire 7. The lead frames 5 and 6 with the chips mounted in this way are inserted and set into the mold 3, and
The optical semiconductor element 8 is formed by heating and curing the synthetic resin 2 injected into the mold.
このとき、合成樹脂２内のガラス小片１は、前
記のように鱗形の薄板状で表面に凹凸を有し、そ
の比重が小さいので沈降速度は極めて遅く、合成
樹脂２の硬化時に平均的に散らばつて均一な分布
状態となる。これに反して、従来のガラスビーズ
ａは、第２図に示すように比重が大きく、合成樹
脂ｂの硬化が終る前に沈澱していまうので、この
合成樹脂内に均一に分布することはできない。 At this time, the small glass pieces 1 in the synthetic resin 2 have a scale-shaped thin plate shape with irregularities on the surface as described above, and because their specific gravity is small, the settling speed is extremely slow, and when the synthetic resin 2 hardens, they are scattered evenly. The distribution becomes uniform. On the other hand, as shown in Figure 2, conventional glass beads a have a high specific gravity and precipitate before the synthetic resin b finishes curing, so they cannot be uniformly distributed within the synthetic resin. .
（発明の効果）
以上説明した本発明方法によれば、拡散剤とし
て薄板状で表面に凹凸を有するガラス小片を用
い、これをモールド用の合成樹脂に混入して発光
部を形成したので、この発光部内に拡散剤の均一
な分布が得られ、かつ拡散剤の形状が薄板状で凹
凸を得るので光を全方向に拡散することができ、
この結果、拡散効果が大きくしかも光度の高い光
半導体素子を得ることができる。(Effects of the Invention) According to the method of the present invention explained above, a thin glass piece having an uneven surface is used as a diffusing agent, and this is mixed into a synthetic resin for molding to form a light emitting part. A uniform distribution of the diffusing agent is obtained within the light emitting part, and the shape of the diffusing agent is a thin plate with unevenness, so light can be diffused in all directions.
As a result, an optical semiconductor element with a large diffusion effect and high luminous intensity can be obtained.
第１図は、この発明の実施例を示す説明図、第
２図は、従来例の説明図である。
１……ガラス小片、２……合成樹脂、３……成
形型、４……チツプ、５，６……リードフレー
ム、７……ワイヤー、８……光半導体素子。
FIG. 1 is an explanatory diagram showing an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a conventional example. DESCRIPTION OF SYMBOLS 1... Glass piece, 2... Synthetic resin, 3... Molding mold, 4... Chip, 5, 6... Lead frame, 7... Wire, 8... Optical semiconductor element.
Claims (1)
散剤としてモールド用の合成樹脂に混入し、この
合成樹脂を成形型に注入し、光半導体を先端部に
マウントしたリードフレームを前記成形型中セツ
トすると共に、前記合成樹脂を硬化させて発光部
を形成することを特徴とする光半導体素子の製造
方法。1 A small piece of thin glass with an uneven surface is mixed into a synthetic resin for molding as a diffusing agent, this synthetic resin is injected into a mold, and a lead frame with an optical semiconductor mounted on the tip is set in the mold. A method for manufacturing an optical semiconductor element, further comprising curing the synthetic resin to form a light emitting part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61095430A JPS62252181A (en) | 1986-04-24 | 1986-04-24 | Manufacture of optical semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61095430A JPS62252181A (en) | 1986-04-24 | 1986-04-24 | Manufacture of optical semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62252181A JPS62252181A (en) | 1987-11-02 |
| JPH0440869B2 true JPH0440869B2 (en) | 1992-07-06 |
Family
ID=14137476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61095430A Granted JPS62252181A (en) | 1986-04-24 | 1986-04-24 | Manufacture of optical semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62252181A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10190066A (en) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and led display using the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221641A (en) * | 1991-06-21 | 1993-06-22 | Rohm Co., Ltd. | Process for making light emitting diodes |
| DE19526389A1 (en) * | 1995-07-19 | 1997-01-23 | Siemens Ag | Semiconductor laser chip and infrared emitter component |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5137427U (en) * | 1974-09-09 | 1976-03-19 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4899063U (en) * | 1972-02-28 | 1973-11-22 |
-
1986
- 1986-04-24 JP JP61095430A patent/JPS62252181A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5137427U (en) * | 1974-09-09 | 1976-03-19 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10190066A (en) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and led display using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62252181A (en) | 1987-11-02 |
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