JPS6251493B2 - - Google Patents

Info

Publication number
JPS6251493B2
JPS6251493B2 JP57181945A JP18194582A JPS6251493B2 JP S6251493 B2 JPS6251493 B2 JP S6251493B2 JP 57181945 A JP57181945 A JP 57181945A JP 18194582 A JP18194582 A JP 18194582A JP S6251493 B2 JPS6251493 B2 JP S6251493B2
Authority
JP
Japan
Prior art keywords
resin
defoaming
air bubbles
molding resin
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57181945A
Other languages
Japanese (ja)
Other versions
JPS5969936A (en
Inventor
Hiroshi Kiryama
Kazuo Yuikawa
Hironori Nakano
Mitsuhiro Nakagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57181945A priority Critical patent/JPS5969936A/en
Publication of JPS5969936A publication Critical patent/JPS5969936A/en
Publication of JPS6251493B2 publication Critical patent/JPS6251493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

【発明の詳細な説明】 <技術分野> 本発明は半導体装置の製造方法に関し、特に半
導体チツプを樹脂モールドによつて保護した半導
体装置において、樹脂中に含まれる気泡の脱泡に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to a method for manufacturing a semiconductor device, and particularly to defoaming of air bubbles contained in a resin in a semiconductor device in which a semiconductor chip is protected by a resin mold.

<従来技術> 数字や図形表示等に用いられる発光ダイオード
表示体は、例えば第1図に示す如く表示窓1
………毎に発光ダイオード素子2,2
設けられ、表示内容に応じて選択された素子のみ
に通電が行われて、発光表示される。上記発光ダ
イオード表示体は、発光ダイオード素子2,2
………をボンデイングしたリードフレーム3
,3………を遮光性を備え且つ上記表示窓1
,1………が形成されたケース4内に納め
て、各リードフレームとケース4との間に液状樹
脂5を注入すると共に、硬化させて両者の間を位
置固定している。
<Prior Art> A light-emitting diode display body used for displaying numbers, figures, etc. has a display window 1 1 , as shown in FIG. 1, for example.
Light emitting diode elements 2 1 , 2 2 are provided for each of 1 2 . The light emitting diode display body includes light emitting diode elements 2 1 , 2
2 Lead frame 3 bonded with ......
1 , 3 2 . . . with a light-shielding property and the display window 1
1 , 1 2 , . . . are placed in a case 4 in which lead frames are formed, liquid resin 5 is injected between each lead frame and the case 4, and is hardened to fix the position between the two.

処で上記構造の発光ダイオード表示体は、モー
ルドのために液状樹脂5が用いられているため、
注入時に気泡の混入がしばしば生じ得る。混入し
た気胞は発光ダイオード2,2………から放
射された光の進行方向を妨げて表示品質を低下さ
せるばかりでなく、ケース壁との間に空隙を生じ
させる惧れがあり水等の侵入を招いて表示体の寿
命を短かくする惧れがあつた。
However, since the light emitting diode display body with the above structure uses liquid resin 5 for molding,
Air bubbles can often occur during injection. The mixed air bubbles not only impede the traveling direction of the light emitted from the light emitting diodes 2 1 , 2 2 . . . and deteriorate the display quality, but also may create a gap with the case wall. There was a fear that this would lead to the intrusion of foreign substances and shorten the life of the display.

従つてこの種の半導体装置を製造する場合、ケ
ース4内に液状樹脂を注入した後脱泡処理を実施
している。従来から行われている脱泡処理は、真
空装置を利用するものであり、また加熱を必要と
していた。そのために大掛りな設備が必要になる
ばかりではなく、時間的にも30分程度の長い時間
を要するという欠点があつた。
Therefore, when manufacturing this type of semiconductor device, a defoaming process is performed after the liquid resin is injected into the case 4. Conventional defoaming treatments utilize a vacuum device and require heating. This not only required large-scale equipment, but also had the disadvantage of requiring a long time of about 30 minutes.

<発明の目的> 本発明は上記従来の製造方法における欠点を除
去し、簡単な作業で脱泡処理することができ、表
示に支障をきたさない脱泡を行うことができる製
造方法を提供することである。
<Purpose of the Invention> The present invention provides a manufacturing method that eliminates the drawbacks of the conventional manufacturing methods described above, allows defoaming processing with simple operations, and allows defoaming to be performed without interfering with display. It is.

<実施例> 第2図において表示体の外枠を構成する遮光性
ケース4には、表示窓となる開口1,1が形
成されているため、樹脂注入に際して洩れを防止
するためにテープ6が密着される。表示窓1
がテープ6によつて封じられた後ケース4の
内部空間を埋めるべく液状樹脂5が注入される。
注入後樹脂が充分軟らかい状態でテープ6側を外
側にして回転装置に装着され、遠心力が付勢され
る。樹脂5に混入した気泡7は、樹脂5より比重
が小さいために軟らかい樹脂中を次第に浮き上
り、樹脂の中心側表面から大気中に放出されて樹
脂の脱泡が行われる。脱泡速度は樹脂の粘性、比
重を選ぶことによつて制御することができる。具
体的には、遮光性ケース4を、たとえばビスフエ
ノール系の主剤に酸無水物の硬化剤及び黒色剤を
添加した樹脂により、予め所定の形状に成型して
おく。また、このケース4の内部に注入される液
状樹脂5として、上記と同種のビスフエノール系
の主剤に酸無水物の硬化剤を添加したものを用い
ることができる。液状樹脂5の粘度は600cP(セ
ンチポアズ)、比重は1.16程度の値を選択し、こ
のような液状樹脂5が注入されたケース4を複数
個直径30cmのドラムの周囲に装着し、2000rpm
(回毎分)程度の回転速度に設定すれば、20秒程
度で脱泡が可能である。
<Example> In FIG. 2, openings 1 1 and 1 2 that serve as display windows are formed in the light-shielding case 4 that constitutes the outer frame of the display body, so tape is applied to prevent leakage during resin injection. 6 is closely attached. Display window 1 1 ,
1 2 is sealed with tape 6, liquid resin 5 is injected to fill the internal space of case 4.
After injection, when the resin is sufficiently soft, it is mounted on a rotating device with the tape 6 side facing outward, and centrifugal force is applied. Since the air bubbles 7 mixed in the resin 5 have a smaller specific gravity than the resin 5, they gradually float up in the soft resin and are released into the atmosphere from the center side surface of the resin, thereby degassing the resin. The defoaming rate can be controlled by selecting the viscosity and specific gravity of the resin. Specifically, the light-shielding case 4 is molded in advance into a predetermined shape using a resin in which, for example, a bisphenol base resin is added with an acid anhydride curing agent and a black agent. Further, as the liquid resin 5 injected into the inside of the case 4, a resin obtained by adding an acid anhydride curing agent to the same type of bisphenol base resin as above can be used. The viscosity of the liquid resin 5 is selected to be 600 cP (centipoise) and the specific gravity is approximately 1.16. Multiple cases 4 injected with such liquid resin 5 are installed around a drum with a diameter of 30 cm, and the casing is heated at 2000 rpm.
If the rotation speed is set to about 1000 times per minute, defoaming can be done in about 20 seconds.

このような条件で脱泡処理された樹脂中に、予
め発光ダイオード素子がボンデイングされたリー
ドフレームが第1図に示す如く位置合せして埋め
込まれ、続いて液状樹脂の硬化処理が行われて半
導体装置を完成する。樹脂硬化後表示窓側のテー
プ6は剥され、表示窓を通して発光状態を観察し
得る。
A lead frame to which a light emitting diode element has been bonded in advance is embedded into the resin that has been degassed under these conditions, aligned as shown in Figure 1, and then the liquid resin is hardened to form a semiconductor. Complete the device. After the resin hardens, the tape 6 on the display window side is peeled off, allowing the state of light emission to be observed through the display window.

上記実施例は発光ダイオードの樹脂モールドに
ついて説明したが、他の半導体装置の樹脂モール
ドにも適用し得る。
Although the above embodiments have been described with respect to resin molds of light emitting diodes, the present invention can also be applied to resin molds of other semiconductor devices.

<効果> 以上本発明によれば、樹脂と気泡の比重差を利
用することにより遠心力を付勢するのみで簡単に
脱泡することができ、従来方法に比べて短時間で
処理することができ、また特に加熱する必要な
く、量産性に適した樹脂の脱泡方法を得ることが
できる。
<Effects> As described above, according to the present invention, by utilizing the difference in specific gravity between the resin and the air bubbles, defoaming can be easily performed simply by applying centrifugal force, and the process can be completed in a shorter time than with conventional methods. Moreover, it is possible to obtain a resin defoaming method suitable for mass production without the need for particular heating.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は樹脂モールド型半導体装置の一部切欠
き斜視図、第2図は本発明による実施例の一工程
を示す断面図である。 2,2:発光ダイオード素子、3,3
:リードフレーム、4:ケース、5:樹脂、
7:気泡。
FIG. 1 is a partially cutaway perspective view of a resin molded semiconductor device, and FIG. 2 is a sectional view showing one step of an embodiment according to the present invention. 2 1 , 2 2 : Light emitting diode element, 3 1 , 3
2 : lead frame, 4: case, 5: resin,
7: Bubbles.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体チツプが取付けられたリードフレーム
を樹脂モールドしてなる半導体装置の製造方法に
おいて、型に流し込まれたモールド用樹脂が硬化
する以前に、前記型に流し込まれたモールド用樹
脂に遠心力を作用させて、前記モールド用樹脂と
この樹脂に混入した気泡との比重の差により、前
記モールド用樹脂から前記気泡を浮き上がらせて
脱泡処理を施す工程を含むことを特徴とする半導
体装置の製造方法。
1. In a method for manufacturing a semiconductor device in which a lead frame to which a semiconductor chip is attached is resin-molded, a centrifugal force is applied to the molding resin poured into the mold before the molding resin is hardened. A method for manufacturing a semiconductor device, comprising the step of lifting the air bubbles from the molding resin due to a difference in specific gravity between the molding resin and the air bubbles mixed in the resin, and performing a defoaming process. .
JP57181945A 1982-10-15 1982-10-15 Manufacture of semiconductor device Granted JPS5969936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57181945A JPS5969936A (en) 1982-10-15 1982-10-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57181945A JPS5969936A (en) 1982-10-15 1982-10-15 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5969936A JPS5969936A (en) 1984-04-20
JPS6251493B2 true JPS6251493B2 (en) 1987-10-30

Family

ID=16109624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181945A Granted JPS5969936A (en) 1982-10-15 1982-10-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5969936A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3775081B2 (en) * 1998-11-27 2006-05-17 松下電器産業株式会社 Semiconductor light emitting device
JP4223743B2 (en) * 2002-06-26 2009-02-12 光寶科技股▲分▼有限公司 Manufacturing method of color section display unit
JP2004267947A (en) * 2003-03-10 2004-09-30 Tohoku Ricoh Co Ltd Photocatalyst device
US7910940B2 (en) 2005-08-05 2011-03-22 Panasonic Corporation Semiconductor light-emitting device

Also Published As

Publication number Publication date
JPS5969936A (en) 1984-04-20

Similar Documents

Publication Publication Date Title
JP2002050799A (en) Led lamp and manufacturing method therefor
JPS6251493B2 (en)
US3608029A (en) Process for encapsulating electronic components
JP3168859B2 (en) Resin sealing method for CCD module
JP3266680B2 (en) Light emitting diode manufacturing method
JP2933764B2 (en) Liquid crystal cell and manufacturing method of liquid crystal cell
JPH05243413A (en) Semiconductor device
JPH01133328A (en) Sealing of semiconductor element
JPS62150859A (en) Semiconductor device
JPS60134447A (en) Manufacture of semiconductor device
JPH03239349A (en) Manufacture of resin-sealed semiconductor device
JPS62150755A (en) Electronic device and manufacture of the same
JPS5884449A (en) Magnetic bubble memory device and manufacture thereof
JPH0687468B2 (en) Method for manufacturing semiconductor device
JPH01128438A (en) Sealing material
JPS63110645A (en) Manufacture of semiconductor device
JPS6134950A (en) Molding method of semiconductor element
JPH05226391A (en) Sealing of ic chip
JPS58103143A (en) Sealing of electronic component parts
JPH0440869B2 (en)
JPH1064937A (en) Resin sealing die for semiconductor device
JPH06271837A (en) Epoxy-sealing agent
JPS629215B2 (en)
JPH07244288A (en) Liquid crystal element and its production
JPH03135039A (en) Manufacture of semiconductor device