JPH0311895Y2 - - Google Patents
Info
- Publication number
- JPH0311895Y2 JPH0311895Y2 JP1983137735U JP13773583U JPH0311895Y2 JP H0311895 Y2 JPH0311895 Y2 JP H0311895Y2 JP 1983137735 U JP1983137735 U JP 1983137735U JP 13773583 U JP13773583 U JP 13773583U JP H0311895 Y2 JPH0311895 Y2 JP H0311895Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting diode
- display surface
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
【考案の詳細な説明】
本考案は発光表示面が均一に光輝する表示用の
発光ダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light emitting diode for display whose light emitting display surface shines uniformly.
一般にこの種の発光ダイオードは、第１図に示
したように、一対のリードフレーム１の一方に発
光ダイオード素子２をマウントし、該発光ダイオ
ード素子をワイヤー３で他方のリードフレームに
接続させ、これを反射枠４内に臨ませ、該反射枠
内に光透過性の樹脂５に適量の光拡散材を混入し
たものを注入し、光拡散材が発光表示面に沈澱し
て光拡散層６を形成するようにモールドした構成
を有している。 Generally, this type of light emitting diode is constructed by mounting a light emitting diode element 2 on one of a pair of lead frames 1, connecting the light emitting diode element to the other lead frame with a wire 3, as shown in FIG. into the reflective frame 4, a light-transmissive resin 5 mixed with an appropriate amount of light diffusing material is injected into the reflective frame, and the light diffusing material precipitates on the light emitting display surface to form the light diffusing layer 6. It has a molded configuration.
このような構成であると、表示面だけの光拡散
であるため、発光ダイオード素子２の真上の部分
だけが強い光となり、表示面と発光ダイオード素
子との距離が短いこともあつて、均一な発光表示
面が得られない。得に指向特性が狭い発光ダイオ
ード素子においては尚更均一な発光表示面は得ら
れない。このような表示面だけの光拡散で、均一
な発光表示面を得ようとすると、光拡散材の量を
多くし、光拡散層を厚くしなければならないが、
そのようにすると光の減衰が著しくなり発光表示
の効率が低下する欠点がある。 With this configuration, since light is diffused only on the display surface, only the part directly above the light emitting diode element 2 receives strong light, and because the distance between the display surface and the light emitting diode element 2 is short, the light is not evenly distributed. A luminescent display surface cannot be obtained. Particularly in the case of a light emitting diode element with narrow directional characteristics, a uniform light emitting display surface cannot be obtained. In order to obtain a uniform light-emitting display surface by diffusing light only on the display surface, it is necessary to increase the amount of light-diffusing material and thicken the light-diffusing layer.
If this is done, there is a drawback that light attenuation becomes significant and the efficiency of luminescent display decreases.
本考案の目的は、発光表示の効率を低下させる
ことなく均一な発光表示面が得られる表示用発光
ダイオードを提供しようとするものである。 An object of the present invention is to provide a light-emitting diode for display that can provide a uniform light-emitting display surface without reducing the efficiency of light-emitting display.
この目的を達成するためになされた本考案は、
一方のリードフレーム上にマウントした発光ダイ
オード素子をワイヤーで他方のリードーフレーム
と接続させ、これを反射枠内において樹脂モール
ドし、発光表示面に光拡散層を備えた表示用発光
ダイオードにおいて、前記発光ダイオード素子と
発光表示面との間に中心部には光拡散材が厚く端
部に行くに従って前記光拡散材が薄くなる中間拡
散層を設けたことを特徴とする表示用発光ダイオ
ードであつて、中間拡散層を設けることにより発
光ダイオード素子からの光を一次的に拡散し、該
拡散光を表示面の光拡散層により二次的に拡散す
ることで均一な発光表示面が得られるのである。 The present invention was developed to achieve this purpose.
In the light emitting diode for display, a light emitting diode element mounted on one lead frame is connected to the other lead frame with a wire, and this is resin molded within a reflective frame, and a light diffusion layer is provided on the light emitting display surface. A light-emitting diode for display, characterized in that an intermediate diffusion layer is provided between a light-emitting diode element and a light-emitting display surface, the light-diffusion material being thick in the center and becoming thinner toward the ends. By providing an intermediate diffusion layer, the light from the light emitting diode element is primarily diffused, and this diffused light is secondarily diffused by the light diffusion layer on the display surface, thereby providing a uniform light emitting display surface. .
次に本考案を図示の実施例により更に詳しく説
明すると、まず第２図に示した第１実施例におい
て、１１は一対のリードフレームであり、該リー
ドフレームの一方に発光ダイオード素子１２をマ
ウントすると共に、該発光ダイオード素子をワイ
ヤー１３により他方のリードフレーム１１に接続
させる。このリードフレーム１１を反射枠１４に
臨ませて樹脂モールドする前に、反射枠１４の内
部に所定量の光拡散材を混入した光透過性の液状
樹脂１５を反射枠の約半分以上に亘つて注入し、
光拡散材を発光表面に沈澱させて光拡散層１６を
形成し、次に前記液状樹脂１５が硬化しない内に
前記光拡散材を混入した同じ液体樹脂を注入する
と共に前記リードフレーム１１の発光ダイオード
素子１２をマウントした側を同時に封入してモー
ルドする。この場合、先に注入した樹脂に重ねて
注入することで光拡散材が重いために比較的中央
部へ集中して沈み込もうとする性質があり、後か
ら注入した樹脂の先端が無理なく円弧状になり、
先に注入した樹脂が硬化し始めていることから光
拡散材の沈澱が阻止され、それによつて略中間附
近に断面三ケ月形の中間拡散層１７が形成され
る。この中間拡散層１７の光拡散材の分布は、中
心部が厚く端部に行くに従って薄くなることは光
拡散材の沈澱の仕方からして必然的にそのように
なる。 Next, the present invention will be explained in more detail with reference to illustrated embodiments. First, in the first embodiment shown in FIG. 2, 11 is a pair of lead frames, and a light emitting diode element 12 is mounted on one of the lead frames. At the same time, the light emitting diode element is connected to the other lead frame 11 by a wire 13. Before resin molding this lead frame 11 facing the reflective frame 14, a light-transmissive liquid resin 15 mixed with a predetermined amount of light diffusing material is applied inside the reflective frame 14 over about half or more of the reflective frame. inject,
A light diffusing material is precipitated on the light emitting surface to form a light diffusing layer 16, and then, before the liquid resin 15 has hardened, the same liquid resin mixed with the light diffusing material is injected and the light emitting diode of the lead frame 11 is injected. The side on which the element 12 is mounted is simultaneously encapsulated and molded. In this case, since the light diffusing material is heavy and is injected over the resin that was injected earlier, it tends to concentrate in the center and sink, and the tip of the resin that was injected later will have a smooth, circular shape. arc-shaped,
Since the previously injected resin has begun to harden, precipitation of the light diffusing material is prevented, thereby forming an intermediate diffusing layer 17 having a crescent-shaped cross section approximately in the middle. The distribution of the light diffusing material in the intermediate diffusing layer 17 is such that it is thick in the center and becomes thinner toward the ends because of the way the light diffusing material is precipitated.
このように形成された表示用発光ダイオード
は、発光ダイオード素子１２からの光が中間拡散
層１７によつて一次的に拡散され、その拡散した
光が発光表示面において光拡散層１６により二次
的に拡散され、略全面に亘つて均等な発光表示が
行えるのである。特に中間拡散層１７はその中心
部に光拡散材が厚く存していることから、一次拡
散が略均一になり、それが更に二次拡散で均等化
されるのである。 In the display light emitting diode formed in this way, the light from the light emitting diode element 12 is primarily diffused by the intermediate diffusion layer 17, and the diffused light is secondarily diffused by the light diffusion layer 16 on the light emitting display surface. The light is diffused over almost the entire surface, and a uniform light emitting display can be performed over almost the entire surface. In particular, since the intermediate diffusion layer 17 has a thick light diffusion material in its center, the primary diffusion becomes approximately uniform, which is further equalized by the secondary diffusion.
第３図及び第４図に示したものは第２実施例で
あり、第１実施例と同一部分には同一符号を付し
てその説明を省略する。この実施例にあつては、
発光表示面を大きくするために反射枠１４から樹
脂１５及び光拡散層１６をはみ出させた構成にし
たものである。例えばゴム又は樹脂製の型を利用
し、その型に反射枠１４を嵌め、前記第１実施例
と同じように光拡散材が混入されている液体樹脂
１５を所定量注入し、この先に注入した液状樹脂
が硬化しない内に同じ液状樹脂を注入することに
よつて断面三ケ月形の中間拡散層１７を形成す
る。この場合、型が反射枠よりも大き目に且つ深
く形成されているので、反射枠の前面側即ち発光
表面側が大きくはみ出して反射枠の内側及び外側
の一部を包み込み、発光表面を実質的に拡大させ
ている。そして、この第２実施例の発光ダイオー
ドを点灯させた場合でも、前記第１実施例と同じ
ように第１拡散と第２拡散とがあつて、その表示
面が略全面に亘つて均等な発光表示が行えるので
ある。更にこの第２実施例の発光ダイオードは、
表示面の外側に枠がないため、これらを適宜縦横
に隣接させて複数個並べることにより切れ目が目
立たない必要な大きさの表示面が簡単に形成でき
るのである。 What is shown in FIG. 3 and FIG. 4 is a second embodiment, and the same parts as in the first embodiment are given the same reference numerals and their explanations will be omitted. In this example,
In order to enlarge the light emitting display surface, the resin 15 and the light diffusing layer 16 are made to protrude from the reflective frame 14. For example, a mold made of rubber or resin is used, the reflective frame 14 is fitted into the mold, and a predetermined amount of liquid resin 15 mixed with a light diffusing material is injected in the same manner as in the first embodiment. By injecting the same liquid resin before the liquid resin hardens, an intermediate diffusion layer 17 having a crescent-shaped cross section is formed. In this case, since the mold is formed larger and deeper than the reflective frame, the front side of the reflective frame, that is, the light emitting surface side, protrudes greatly and wraps around a part of the inside and outside of the reflective frame, substantially expanding the light emitting surface. I'm letting you do it. Even when the light emitting diode of the second embodiment is turned on, the first diffusion and the second diffusion occur in the same way as in the first embodiment, and the display surface is uniformly emitted over almost the entire surface. It can be displayed. Furthermore, the light emitting diode of this second embodiment is
Since there is no frame on the outside of the display surface, by arranging a plurality of these adjacently vertically and horizontally, it is possible to easily form a display surface of the required size without noticeable breaks.
以上説明したように本考案に係る表示用発光ダ
イオードは、発光ダイオード素子と発光表示面と
の間に、中心部が厚く端部に行くに従つて薄くな
る中間拡散層を設けた構造にしたので、発光ダイ
オードからの光は中間拡散層において一次拡散が
行われ、この一次拡散によつて或る程度平均化さ
れた光が発光表示面の光拡散層によつて更に均等
化され、発光表示面においては全面に亘つて均一
な発光表示ができると云う優れた効果を奏する。 As explained above, the display light emitting diode according to the present invention has a structure in which an intermediate diffusion layer is provided between the light emitting diode element and the light emitting display surface, which is thick in the center and becomes thinner toward the edges. , the light from the light emitting diode undergoes primary diffusion in the intermediate diffusion layer, and the light that is averaged to some extent by this primary diffusion is further equalized by the light diffusion layer on the light emitting display surface, and the light emitted from the light emitting display surface is This has an excellent effect in that uniform light emission can be displayed over the entire surface.
更に、中間拡散層の中心部が厚くなつているこ
とからして、発光ダイオード素子と表示面とが近
接していても、又発光ダイオード素子の指向特性
が狭くても一次拡散が充分になされて且つ二次拡
散がなされるので、表示用発光ダイオードを薄形
に且つ表示面を広く形成でき汎用性が大になる等
の優れた効果も奏する。 Furthermore, since the central part of the intermediate diffusion layer is thick, primary diffusion is sufficient even if the light emitting diode element and the display surface are close to each other, or even if the directivity of the light emitting diode element is narrow. In addition, since secondary diffusion is performed, excellent effects such as a thin display light emitting diode with a wide display surface and increased versatility are achieved.
第１図は従来例に係る表示用発光ダイオードの
縦断面図、第２図は本考案に係る第１実施例の表
示用発光ダイオードの縦断面図、第３図は同第２
実施例の表示用発光ダイオードの斜視図、第４図
は同実施例の縦断面図である。
１１……リードフレーム、１２……発光ダイオ
ード素子、１３……ワイヤー、１４……反射枠、
１５……光透過性樹脂、１６……光拡散層、１７
……中間拡散層。
FIG. 1 is a longitudinal sectional view of a display light emitting diode according to a conventional example, FIG. 2 is a longitudinal sectional view of a display light emitting diode according to a first embodiment of the present invention, and FIG.
FIG. 4 is a perspective view of the display light emitting diode of the embodiment, and FIG. 4 is a longitudinal cross-sectional view of the same embodiment. 11... Lead frame, 12... Light emitting diode element, 13... Wire, 14... Reflective frame,
15...Light-transmitting resin, 16...Light diffusion layer, 17
...Intermediate diffusion layer.
Claims (1)
イオート素子をワイヤーで他方のリードフレーム
と接続させ、これを反射枠内において樹脂モール
ドし、発光表示面に光拡散層を備えた表示用発光
ダイオードにおいて、前記発光ダイオード素子と
発光表示面との間に中心部には光拡散材が厚く端
部に行くに従つて前記光拡散材が薄くなる中間拡
散層を設けたことを特徴とする表示用発光ダイオ
ード。 In the light emitting diode for display, a light emitting diode element mounted on one lead frame is connected to the other lead frame with a wire, and this is resin molded within a reflective frame, and a light diffusing layer is provided on the light emitting display surface. A light-emitting diode for display, characterized in that an intermediate diffusion layer is provided between a diode element and a light-emitting display surface, the light-diffusion material being thick in the center and becoming thinner toward the ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983137735U JPS6045453U (en) | 1983-09-05 | 1983-09-05 | Light emitting diode for display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983137735U JPS6045453U (en) | 1983-09-05 | 1983-09-05 | Light emitting diode for display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6045453U JPS6045453U (en) | 1985-03-30 |
| JPH0311895Y2 true JPH0311895Y2 (en) | 1991-03-20 |
Family
ID=30309271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983137735U Granted JPS6045453U (en) | 1983-09-05 | 1983-09-05 | Light emitting diode for display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6045453U (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4322987B2 (en) * | 1999-01-27 | 2009-09-02 | スタンレー電気株式会社 | LED lamp and manufacturing method thereof |
| JP2010021497A (en) * | 2008-07-14 | 2010-01-28 | Sanyo Electric Co Ltd | Semiconductor light-emitting device |
| JP5660766B2 (en) * | 2009-06-26 | 2015-01-28 | 日亜化学工業株式会社 | Light emitting device |
| JP5284432B2 (en) * | 2011-09-02 | 2013-09-11 | 三菱レイヨン株式会社 | Light source device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5785273A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Photo-semiconductor device |
-
1983
- 1983-09-05 JP JP1983137735U patent/JPS6045453U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5785273A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Photo-semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6045453U (en) | 1985-03-30 |
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