JPH0439774B2 - - Google Patents
Info
- Publication number
- JPH0439774B2 JPH0439774B2 JP59020325A JP2032584A JPH0439774B2 JP H0439774 B2 JPH0439774 B2 JP H0439774B2 JP 59020325 A JP59020325 A JP 59020325A JP 2032584 A JP2032584 A JP 2032584A JP H0439774 B2 JPH0439774 B2 JP H0439774B2
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- layer
- electrode
- type
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59020325A JPS60164366A (ja) | 1984-02-06 | 1984-02-06 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59020325A JPS60164366A (ja) | 1984-02-06 | 1984-02-06 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60164366A JPS60164366A (ja) | 1985-08-27 |
| JPH0439774B2 true JPH0439774B2 (OSRAM) | 1992-06-30 |
Family
ID=12023978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59020325A Granted JPS60164366A (ja) | 1984-02-06 | 1984-02-06 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60164366A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3881922T2 (de) * | 1987-03-18 | 1993-10-07 | Fujitsu Ltd | Zusammengesetzte Halbleiteranordnung mit nicht-legierten ohmschen Kontakten. |
-
1984
- 1984-02-06 JP JP59020325A patent/JPS60164366A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60164366A (ja) | 1985-08-27 |
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