JPH0436947A - Electron beam control device - Google Patents

Abstract

PURPOSE:To vary the electron flow density on a specimen with the deflection angle of an electron beam by making controllable the current density irradiated on the specimen using the deflection angle of the electron beam. CONSTITUTION:An electron beam generated from an electron gun 1 is converged by a lens system, and a specimen 3 is subjected to X-Y two-dimensional scan by a deflecting coil 2. The electron beam makes circular scan over the specimen 3 by flowing the deflection current sin-waveform to X and cos-waveform to Y in the deflecting coil 2. The deflection angle is varied by changing the deflecting waveform current, and spiral scanning can be made. If within the same period of cycle, the outside dia. scanning speed is greater than the inside dia. scanning speed, so that the current density at the outside dia. drops more than at the inside dia. on the specimen 3. Therefore, this method is not favorable in case the specimen is subjected to surface processing. Now, control of the inside dia. scanning speed V1 and outside dia. scanning speed V2 gives an effect of controlling the current density into a uniform or a desired value, and in this case, it is made practicable by controlling the period of cycle in inside dia. scanning and outside dia. scanning.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam irradiation device, and more particularly to an electron beam control device suitable for electron flow density control.

[Conventional technology]

In the conventional electron beam irradiation device, the electron beam control device does not have a control device to control the electron flow density of the sample-42 depending on the deflection angle of the electron beam.

[Problem to be solved by the invention]

1. Conventional technology does not have a function to control the current density irradiated to the sample by adjusting the deflection angle of the electron beam in the electron beam irradiation device, so it is necessary to improve the accuracy of sample surface processing during spiral scanning etc. was there.

SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam irradiation device or similar device equipped with an electron beam control device that changes the electron flow density on a sample depending on the deflection angle of the electron beam.

[Means to solve the problem]

In order to achieve the first objective, the current density irradiated onto the sample can be controlled by the deflection angle of the electron beam.

[Effect]

Since the electron beam control device of the present invention can control the electron beam irradiated onto the sample by changing the deflection angle, it is possible to improve the accuracy of surface machining of the sample.

〔Example〕

The configuration and operation of the embodiment will be explained below.

The configuration diagram in FIG.
, , Y2D scan is performed. By passing a deflection current sine waveform in the X direction and cosine waveform in the Y direction as shown in FIG. 2 through the deflection coil 2, the electron beam scans the sample 3 in a circular pattern. By changing the deflection waveform current, the deflection angle is changed, and it is possible to scan in a spiral shape as shown in FIG.

When the electron beam scans the sample 3-'2 in a spiral, the same
Within the period, the inner diameter scanning speed is faster than the long diameter scanning speed, so the current density is lower at the outer diameter than at the inner diameter of sample 3''. Therefore, this method is inconvenient when processing the surface of a sample.

The present invention section] plan is based on the inner diameter scanning speed Vl from FIG.

By controlling the outer diameter scanning speed v2, there is an effect of controlling the electrolyte density to be uniform or a desired value. In this case, it is the inner diameter scan of the sjn and cos waveforms in Figure 2.

This becomes possible by controlling the period during outer diameter scanning.

The second invention, as shown in Figure 4, uses an electron beam with an inner diameter.

By scanning the outer diameter N1 times and N2 times, there is an effect of controlling the current density from 1 to 1.

In this case, the inner diameter scan of the sjn and cos waveforms in Fig. 2,
This is possible by making the period during outer diameter scanning the same and controlling the number of repetitions.

The third invention is the beam blanking play 1- in Fig. 1.
By the operation of 〇, the electron beam is moved to spora 1~ as shown in Figure 6.
By controlling the intervals Ls, , L2, there is an effect of controlling the current density. In this case sin, cos
When scanning the inner diameter using beam blanking, the waveform's inner diameter scanning and outer diameter scanning cycles are the same.

This becomes possible by controlling the conduction time during outer diameter scanning as shown in FIG. Figure 7 is 1. ．． 2.3 It is a current density distribution diagram on a normal sample when there is no plan.

Therefore, the current density during inner diameter scanning and outer diameter scanning is
．． Plan 2.3 is effective in controlling the current density.

〔Effect of the invention〕

Since the present invention is configured as described above, it produces the effects described below.

The current density on the sample can be controlled by scanning the electron beam at an inner diameter scanning speed and an outer diameter scanning speed. Furthermore, the current density on the sample can be controlled by controlling the number of times the electron beam is scanned on the inner diameter and the number of times the electron beam is scanned on the outer diameter.

Further, the electronic bee 11 is used in conjunction with blanking to set the spot interval L1. By controlling L2, the current density of sample-7 can be controlled.

[Brief explanation of the drawing]

Figure 1 is a configuration diagram of the present invention, Figure 2 is a waveform diagram of the current flowing through the deflection coil, Figure 3 is a diagram of the inner and outer diameters of the sample when the electron beam scanning speed is changed, and Figure 4 is a diagram of the current waveform flowing through the deflection coil. Figure 5 is a diagram of the pulse voltage waveform from blanking plate 1 to pulse voltage waveform, and Figure 6 is a diagram showing the inner diameter and outer diameter of sample 2 when the electron beam 11 is scanned multiple times. FIG. 7 is a diagram showing the average current density when the diameter is scanned in spora 1 to shape using electron beam scanning and blanking, and FIG. 7 is a diagram showing the average current density when the diameter is scanned in a normal spiral shape. 1. Electron gun, 2. Deflection coil, 3. Sample, 4.
...Current amplifier, 5...SJN waveform generator, 6...Current amplifier, 7...CO3 waveform generator, 8...CPU, 9
・・Planki'back Iso;− × ・ze+)−

Claims (1)

[Scope of Claims] 1. An electron beam control device in an electron beam irradiation device, characterized in that the electron beam irradiated onto a sample is controlled by a deflection angle to vary the current density. 2. The electron beam control device according to claim 1, wherein the deflection speed is controlled by the deflection angle to change the current density of the sample. 3. The electron beam control device according to claim 1, wherein the current density is controlled by overlapping the electron beams a plurality of times. 4. An electron beam control device according to claim 1, characterized in that the electron flow density is controlled by adding a beam blanking function and controlling conduction time.