JP2011090844A - Sample processing method and sample processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sample processing method and a sample processing device capable of carrying out processing of a circumference or a circle with any position on the sample as a center by using luster scan function or the like without relying on a vector scan system. <P>SOLUTION: A scanning image 31 on the sample is obtained, which 31 is displayed, and ion beams are irradiated on a part of the sample corresponding to a site 34 designated in the scanning image 31. With the irradiation of the ion beams continued, a rotation deflection of the ion beams are carried out with an axis corresponding to a center 36 of the scanning image 31 as a rotating axis, whereby an area on the sample where the ion beams are irradiated is etched. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a sample processing method and a sample processing apparatus capable of processing a sample by irradiating a sample to be processed with a focused ion beam (FIB).

  Conventionally, a sample processing apparatus that irradiates a sample to be processed with a focused ion beam and performs sample processing in order to create fine devices and machine parts or to prepare a sample for a transmission electron microscope. Is used.

  In such a sample processing apparatus, a focused ion beam is irradiated to a sample arranged in the apparatus. A portion irradiated with the focused ion beam on the sample is etched by the focused ion beam. Thereby, the sample is processed.

  As a method of irradiating a focused ion beam at the time of sample processing, a method is known in which a predetermined area on a sample is raster scanned with a focused ion beam. In this raster scan method, the rectangular area is etched by sequentially scanning a predetermined rectangular area on the sample with a focused ion beam. Thereby, a recess or an opening corresponding to the rectangular region is formed in the sample.

  In a sample processing apparatus having such a raster scan function, a sample is placed on a turntable (sample stand) in the apparatus, and the sample on the turntable is etched with a charged particle beam such as FIB while the turntable is continuously rotated. In some cases, a rotationally symmetric three-dimensional shape structure is created (see Patent Document 1).

  In addition, the ion beam scanning direction is electrically rotated and coordinated, and 360 ° can be deflected and scanned in any direction, so that sample surface processing such as ion beam local film deposition not only in the XY coordinate axis direction but also in the oblique direction is possible. There is also a thing which can perform (refer patent document 2).

  In addition, when processing arbitrary shapes on a sample, the sample processing apparatus provided with a vector scan function may be used.

JP 2005-310757 A JP-A-63-241953

  In sample processing such as etching using a raster scan with a focused ion beam, processing of a rectangular shape on the sample is usually possible, but processing performed along a predetermined circumference on the sample or a predetermined circular shape It was difficult to process (including the inside of the circle).

  In the sample processing apparatus described in Patent Document 1, it is possible to perform sample processing by etching a sample with a charged particle beam while continuously rotating a turntable on which the sample is placed. .

  Therefore, in the sample processing apparatus described in Patent Document 1, while using a raster scan of a charged particle beam and rotating the sample itself by a turntable, processing along a predetermined circumference around the rotation axis, or a predetermined It becomes possible to perform circular processing.

  However, in this case, the processing is limited to a circular or circular processing around the rotation axis of the turntable in a state where the sample is placed on the turntable.

  Therefore, in the sample processing apparatus described in Patent Document 1, it is not possible to perform circumferential or circular processing with an arbitrary position on the sample placed on the turntable as the central axis, and sample processing is limited. .

  If the vector scan method is used, it is possible to perform a circumferential or circular process centered on an arbitrary position on the sample. However, when incorporating the function of the vector scan method into the sample processing device that already has the raster scan function, it is necessary to add hardware for implementing the vector scan method to the device, which greatly increases the cost. Will be accompanied.

  The present invention has been made in view of the above points, and a circumferential or circular process centered at an arbitrary position on a sample is performed using a raster scan function or the like regardless of the vector scan method. It is an object of the present invention to provide a sample processing method and a sample processing apparatus that can be used.

  The sample processing method according to the present invention includes a step of obtaining a scanned image on a sample, a step of displaying the scanned image, and an ion beam on a portion on the sample corresponding to a designated position in the displayed scanned image. An irradiation step, and a step of rotating and deflecting the ion beam about an axis corresponding to the center of the scanned image while continuing irradiation of the ion beam, on the sample irradiated with the ion beam. The region is etched.

  The sample processing apparatus according to the present invention includes a means for acquiring a scanned image on a sample, a means for displaying the scanned image, a means for designating an arbitrary position in the displayed scanned image, and designation in the scanned image. Means for irradiating an ion beam to a portion on the sample corresponding to the spot, and means for rotating and deflecting the ion beam about the axis corresponding to the center of the scanned image while continuing the irradiation of the ion beam And a region on the sample irradiated with the ion beam is etched.

  In the present invention, an ion beam is irradiated to a portion on the sample corresponding to a designated position in the scanned image on the sample, and the axis corresponding to the center of the scanned image is rotated while the ion beam is continuously irradiated. The ion beam is rotationally deflected to etch the region on the sample irradiated with the ion beam.

  At this time, the irradiation of the ion beam onto the portion on the sample corresponding to the designated location can be performed by scanning the ion beam onto the portion (raster scan).

  Also in a sample processing apparatus having a raster scan function, irradiation of an ion beam to a portion on a sample corresponding to the designated location can be performed by spot irradiation of the ion beam to the portion.

  In the present invention, with such a configuration, the center of the acquired scanned image is appropriately set on the sample, so that a circular or circular processing centered on an arbitrary position on the sample can be made into a vector scan method. Regardless, it can be performed using a raster scan or the like.

It is a schematic block diagram which shows the sample processing apparatus in this invention. It is a figure which shows an example of a scanning image (SIM image).

  Hereinafter, a sample processing method and a sample processing apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a sample processing apparatus according to the present invention.

  In the figure, an ion beam 10 emitted from an ion gun 1 serving as an ion beam source is focused by a focusing lens 2 and an objective lens 3 and reaches a sample 7. Thereby, the ion beam 10 from the ion gun 1 is irradiated on the sample 7 as a focused ion beam (FIB).

  At this time, the ion beam 10 is appropriately deflected by the deflection action of the H direction deflector 4 and the V direction deflector 5, and the ion beam 10 scans a predetermined area on the sample 7 (raster scan). If the deflection state by these deflectors 4 and 5 is kept constant for a predetermined time without changing, the ion beam 10 will irradiate a predetermined spot on the sample 7 during that time. .

  In this way, the portion of the sample 7 irradiated with the focused ion beam 10 is etched. Then, when the focused ion beam 10 scans a predetermined rectangular area on the sample 7 by raster scanning, the inside of the rectangular area is etched, and a concave portion or opening of the rectangular shape is formed in the sample 7.

  A limiting diaphragm 6 is disposed between the focusing lens 2 and the deflectors 4 and 5. The limiting aperture 6 is formed with a hole 6 a for allowing a part of the ion beam 10 that has passed through the focusing lens 2 to pass therethrough. The ion beam 10 that has passed through the hole 6 a provided in the limiting diaphragm 6 reaches the sample 7 via the deflectors 4 and 5 and the objective lens 3.

  Here, the ion beam column 12 is constituted by the ion gun 1, the focusing lens 2, the limiting diaphragm 6, the deflectors 4 and 5, the objective lens 3, and the like.

  This sample processing apparatus can perform etching of the sample 7 and can also acquire a scanning image of the sample 7 using the focused ion beam 10 in the same manner as a normal sample processing apparatus using a focused ion beam. .

  That is, when the focused ion beam 10 from the ion beam column 12 performs a raster scan of a predetermined region on the sample 7, secondary electrons 11 generated from the sample 7 by the scan are detected by the electron detector 8.

  At this time, the electron detector 8 outputs a detection signal based on the detected amount of the detected secondary electrons 11. This detection signal is amplified by an amplifier (not shown), further A / D converted by an A / D converter (not shown), and then sent to the image data creation unit 9.

  The image data creation unit 9 creates scan image data based on the scan control signal of the focused ion beam 10 during the raster scan and the detection signal after A / D conversion. The scanned image created in this way is a SIM (Scanning Ion Microscope) image. The scanned image data is temporarily stored in the storage unit 18 via the bus line 13.

  Here, the ion gun 1, the focusing lens 2, and the objective lens 3 are driven by the corresponding driving units 1a to 3a, respectively. The drive units 1 a to 3 a are controlled by the arithmetic control unit 17 via the bus line 13. As a result, the ion gun 1, the focusing lens 2, and the objective lens 3 are driven and controlled by the arithmetic control unit 17 via the corresponding driving units 1a to 3a.

  The H direction deflector 4 and the V direction deflector 5 are driven by the corresponding H deflection drive unit 4a and V deflection drive unit 5a, respectively. An H deflection signal is supplied from the adder 23 to the H deflection driving unit 4a. A V deflection signal is supplied from the adder 24 to the V deflection driver 5a.

  The adder 23 is supplied with the scanning signal H ′ sent from the rotary scanning conversion circuit 16 and the H shift signal ΔH sent from the H shift signal generating circuit 21. Further, the adder 24 is supplied with the scanning signal V ′ sent from the rotary scanning conversion circuit and the V shift signal ΔV sent from the V shift signal generating circuit 22.

The adder 23 sends an addition signal _HA of the scanning signal H ′ and the H shift signal ΔH as an H deflection signal to the H deflection drive unit 4a. The adder 24 sends an addition signal V _A of the scanning signal V ′ and the V shift signal ΔV as a V deflection signal to the V deflection driving unit 5a.

  The rotary scanning conversion circuit 16 is supplied with an H scanning signal (scanning signal H) and a V scanning signal (scanning signal V) from an H scanning signal generation circuit 14 and a V scanning signal generation circuit 15, respectively. The H scanning signal generation circuit 14 and the V scanning signal generation circuit 15 are supplied with respective scanning control signals from the arithmetic control unit 17 via the bus line 13.

  Further, rotation angle information (rotation angle signal θ) is sent from the arithmetic control unit 17 to the rotation scanning conversion circuit 16 via the bus line 13.

  The H shift signal generation circuit 21 receives the H direction shift amount information (H shift control signal P) and the rotation angle signal θ from the arithmetic control unit 17 via the bus line 13. Further, the V-direction shift amount information (V-shift control signal Q) and the rotation angle signal θ are sent to the V-shift signal generation circuit 22 from the arithmetic control unit 17 via the bus line 13.

  A display unit 19 and an input unit 20 are connected to the bus line 13. The display unit 19 includes display means such as an LCD or CRT. The input unit 20 includes a key input device such as a keyboard and a pointing device such as a mouse.

  The sample 7 is placed on a sample stage (not shown). The sample stage is disposed inside a sample chamber (not shown) communicating with the distal end side (objective lens 3 side) of the ion beam column 12.

  The arithmetic control unit 17 includes the above-described driving units 1a to 5a, the image data creation unit 9, the scanning signal generation circuits 14 and 15, the rotary scanning conversion circuit 16, the storage unit 18, the display unit 19, and an H shift signal generation. Each operation of the circuit 21, the V shift signal generation circuit 22 and the sample stage is controlled.

  The above is the configuration of the sample processing apparatus in the present invention. Next, the operation (sample processing method) of the sample processing apparatus will be described.

  A sample 7 to be processed is placed on a sample stage in a sample chamber. Thereafter, the focused ion beam 10 irradiated from the ion beam column 12 is scanned (raster scan) on the sample 7. The current amount and acceleration voltage of the focused ion beam 10 at this time are set to conditions for acquiring a SIM image.

  On the sample 7, secondary electrons 11 are generated from a scanning region where the focused ion beam 10 is scanned. The secondary electrons 11 generated thereby are detected by the electron detector 8. The electron detector 8 outputs a detection signal based on the detected amount of the detected secondary electrons 11. The detection signal is amplified, A / D converted, and sent to the image data creation unit 9.

  A scanning control signal at the time of the raster scan is supplied from the arithmetic control unit 17 to the image data creation unit 9, and the image data creation unit 9 is based on the scanning control signal and the detection signal after A / D conversion. Thus, scanned image data is created. The created scanned image data is stored in the storage unit 18 via the bus line 13.

  Thereafter, the scanned image data is read from the storage unit 18 and sent to the display unit 19 under the control of the arithmetic control unit 17. The display unit 19 displays a scanned image based on the scanned image data. The displayed scanned image is a SIM image.

  An operator who operates the apparatus visually confirms the displayed scanned image and confirms whether or not an area including a region to be processed on the sample 7 is included in the scanned image. When the area is not included in the scanned image, the operator performs an operation for moving the sample 7 and / or moving the scanning region on the sample 7 via the input unit.

  In this way, acquisition (storage) of scan image data of a scan image in a state where an area including a region to be processed is included in the scan image and a desired rotation axis is located at the center of the scan image. After the display is completed, irradiation (scanning) of the focused ion beam 10 onto the sample 7 is once ended.

  Thereafter, an etching processing area is designated in the scanned image as follows.

  FIG. 2 shows an example of a scanned image (SIM image) displayed at this time. In FIG. 2, 31 is a scanned image. The operator designates a part of the region to be etched in the scanned image 31 by operating a pointing device (such as a mouse) of the input unit 20 while visually confirming the acquired scanned image 31. .

  That is, the cursor 35 displayed in the image 31 is moved by the operation of the pointing device, and the rectangular area 34 is designated in the image 31. For example, in the image 31, the rectangular area 34 corresponding to the part is designated by the operator by moving the cursor 35 based on the operation of the pointing device.

  When this area designation is performed, information on the position of the rectangular area 34 in the image 31 (position with the center 36 of the image 31 as the origin) and the size is controlled from the input unit 20 via the bus line 13. Sent to the unit 17. Based on the information, the arithmetic control unit 17 scans the portion on the sample 7 corresponding to the rectangular area 34 with the ion beam 10 and the H scan control signal and the H shift control signals P and V. A shift control signal Q is generated.

  When the sample 7 is etched after the above-described region designation is performed, the calculation control unit 17 drives the ion gun 1, the focusing lens 2, the objective lens 3, the H direction deflector 4, and the V direction deflector 5. Control is performed, and the focused ion beam 10 is irradiated onto the sample 7 from the ion beam column 12. At this time, the H deflection scanning control signal generated by the arithmetic control unit 17 is sent to the H scanning signal generation circuit 14. Further, the V deflection scanning control signal generated by the arithmetic control unit 17 is sent to the V scanning signal generation circuit 15.

  The H scanning signal generation circuit 14 supplies an H deflection signal (scanning signal H) to the rotational scanning conversion circuit 16 based on the H deflection scanning control signal sent from the arithmetic control unit 17. The V scanning signal generation circuit 15 supplies a V deflection signal (scanning signal V) to the rotational scanning conversion circuit 16 based on the V deflection scanning control signal sent from the arithmetic control unit 17.

  Further, rotation angle information (rotation angle signal θ) is supplied to the rotation scanning conversion circuit 16 from the arithmetic control unit 17. In the present invention, this rotation angle information changes (increases) sequentially with the passage of time from θ = 0 ° to θ = 360 °.

  The rotary scanning conversion circuit 16 converts the scanning signals H and V so as to perform coordinate conversion based on the following mathematical formula.

当該変換が施された後のＨ偏向信号（走査信号Ｈ´）及びＶ偏向信号（走査信号Ｖ´）は、それぞれ対応する加算器２３，２４に送られる。

After the conversion, the H deflection signal (scanning signal H ′) and the V deflection signal (scanning signal V ′) are sent to the corresponding adders 23 and 24, respectively.

  In parallel with this, the H shift signal generation circuit 21 is supplied with the H shift control signal P from the arithmetic control unit 17 based on the position information of the rectangular area 34 and the rotation angle signal θ. The V shift signal generating circuit 22 is supplied with the V shift control signal Q and the rotation angle signal θ from the arithmetic control unit 17 based on the position information of the rectangular area 34. The rotation angle information supplied to the H shift signal generation circuit 21 and the V shift signal generation circuit 22 is the same as the rotation angle signal supplied to the rotation scanning conversion circuit 16 from θ = 0 ° to θ = 360 ° at the same timing. It will change (increase) sequentially over time.

  As a result, the H shift signal generation circuit 21 supplies the adder 23 with the H shift signal ΔH that sequentially changes at the same timing as described above. The V shift signal generation circuit 22 also supplies the adder 24 with a V shift signal ΔV that sequentially changes at the same timing as described above. These ΔH and ΔV signals correspond to the position of the rectangular area etched on the sample 7 (position with the center 36 of the image 31 as the origin), and the rotation angle information is θ = 0 ° to 360 °. The position is rotated once about the center 36 of the image 31 as the center axis.

Then, the adder 23 sends an addition signal _HA of the scanning signal H ′ and the H shift signal ΔH to the H deflection drive unit 4a as an H deflection signal. Further, the adder 24 sends an addition signal _VA of the scanning signal V ′ and the V shift signal ΔV as a V deflection signal to the V deflection drive unit 5a.

The H deflection driving unit 4 a supplies the H direction deflector 4 with an H deflection driving signal based on the sent addition signal _HA . Further, the V deflection driving unit 5 a supplies a V deflection driving signal to the V direction deflector 5 based on the sent addition signal V _A.

  Based on this, the H direction deflector 4 and the V direction deflector 5 are driven, and the ion beam 10 is deflected. Thereby, scanning on the sample 7 by the focused ion beam 10 deflected by the deflectors 4 and 5 is executed. The current amount and acceleration voltage of the focused ion beam 10 at this time are set to conditions for performing etching.

  By the scanning of the focused ion beam 10 on the sample 7 according to the above, the sample corresponding to the rectangular area 34 described above at the beginning (when the rotation angle signal θ = 0 ° sent from the calculation control unit 17 to the rotation scanning conversion circuit 16). 7 is partially etched. When the rotation angle signal θ increases from 0 ° as time elapses, the rectangular region 34 becomes an arrow along the circumference centered on the image center 36 of the acquired scanned image 31. It will move sequentially in the direction of A. As a result, the processing region on the sample 7 by the focused ion beam 10 (the portion on the sample 7 corresponding to the rectangular region 34) sequentially moves, and etching of the processing region located at each point in time is executed. .

  As a result, when the rotation angle signal θ sequentially increases from 0 ° and reaches 360 °, the rectangular region 34 makes one round along the circumference having the center 36 as the center (rotation axis). As a result, a circumferential etching process (doughnut-shaped portion) on the sample 7 is performed. That is, the region corresponding to the area between both dotted lines (large and small circles) indicated by 32 and 33 in FIG. 2 is sequentially etched.

  Here, the etching amount (etching depth) applied to the sample 7 is set according to the change (increase) speed of the rotation angle signal θ sent from the calculation control unit 17 to the rotation deflection conversion unit 16. . That is, the etching amount increases as the change rate becomes slower.

  Further, in the scanned image 31, when the scanned image center 36 is located inside the rectangular area designated as described above (see the rectangular area 34a in FIG. 2), a rectangular shape with the center 36 as the rotation center is used. The region 34a is rotated sequentially. In this case, a circular etching process (including the inside of the circular shape) centering on the center 36 is performed on the sample 7.

  Further, in the above example, the portion on the sample 7 corresponding to the rectangular region 34 designated by the operator is scanned by the ion beam 10 using the pointing device. However, it is not necessary to be limited to such a form. For example, an arbitrary point (location) in the scanned image 31 may be designated by an operator using a pointing device, and a spot corresponding to the point may be spot irradiated with the focused ion beam 10 to perform etching. In this case, a circumferential etching process is performed in which the spot diameter of the focused ion beam 10 on the sample 7 is a width.

  As a means for rotating the position of the rectangular region (or spot region) etched on the sample 7 around the center 36 of the image 31 as the central axis, the above configuration (configuration using the adders 23 and 24) is used. It is not limited to.

  In addition to the above configuration, as a modification, the ion beam column 12 further includes an H direction additional deflector and a V direction additional deflector to drive the H direction additional deflector and the V direction additional deflector, respectively. A signal ΔH from the H shift signal generation circuit 21 and a signal ΔV from the V shift signal generation circuit 22 may be supplied to each of the drive units (additional installation). Based on this, the position of the rectangular region (or spot region) etched on the sample 7 is centered on the center 36 of the image 31 by the deflection action to the ion beam 10 by the H direction additional deflector and the V direction additional deflector. It can be rotated once as a shaft.

  As described above, the sample processing method according to the present invention includes the step of acquiring the scanned image 31 on the sample 7, the step of displaying the scanned image 31, and the location (rectangular region) designated in the displayed scanned image 31. 34) irradiating the portion on the sample 7 corresponding to 34) with the ion beam 10, and rotating the ion beam about the axis corresponding to the center 36 of the scanned image 31 while continuing the irradiation of the ion beam 10. A step of performing deflection, and the region on the sample 7 irradiated with the ion beam 10 is etched.

  In addition, the sample processing apparatus according to the present invention includes means for acquiring the scanned image 31 on the sample 7 (electron detector 8 and image data creating unit 9), means for displaying the scanned image 31 (display unit 19), Means (input unit 20) for designating an arbitrary position in the displayed scanning image 31 and means (ion) for irradiating the portion on the sample 7 corresponding to the designated position in the scanning image 31 (ion And a means (ion ion) for rotating and deflecting the ion beam 10 with the axis corresponding to the center 36 of the scanned image 31 as the rotation axis while continuing the irradiation of the ion beam 10. A region of the sample 7 irradiated with the ion beam 10 is etched.

  The rotational deflection of the ion beam 10 at this time is performed together with the scanning of the portion by the ion beam 10 on the sample 7.

  Further, the rotational deflection of the ion beam 10 can be performed together with spot irradiation of the portion by the ion beam 10 on the sample 7.

  In the present invention, with such a configuration, the rectangular area 34 (34a) or the spot irradiation area to be etched is rotated 360 ° around the image center 36 during the etching process even in an apparatus not equipped with the vector scan function. By doing so, circumferential processing or circular processing on the sample 7 becomes possible. Here, according to the circumferential processing, it is possible to create a micro component such as an emitter used in an electron gun, for example. According to the circular processing, for example, an aperture having a micro opening is created. (Perform edge finishing of the aperture).

  As a result, circumferential or circular processing can be performed without adding hardware for mounting the vector scan function to the apparatus, and the cost of the apparatus is not increased.

  By using the raster scan and blanking function together, the entire area on the sample corresponding to the acquired scanned image is scanned with an ion beam during etching, and the area to be processed on the sample By controlling to release blanking only at the timing when the ion beam is applied to the circumferential part or circular part, circular or circular machining is possible using equipment that does not have a vector scan function. It is.

  However, this method requires a scanning time corresponding to a region on the sample other than the circumferential portion or the circular portion (the ion beam is blanked during this scanning time), and a long processing time is required. It becomes.

  On the other hand, in the present invention, only the region to be actually processed is sequentially scanned, so that processing can be performed in a short time.

DESCRIPTION OF SYMBOLS 1 ... Ion gun, 2 ... Condensing lens, 3 ... Objective lens, 4 ... H direction deflector, 5 ... V direction deflector, 1a-5a ... Drive part, 6 ... Restriction diaphragm, 7 ... Sample, 8 ... Electron detector , 9 ... Image data generating unit, 10 ... Ion beam, 11 ... Secondary electrons, 12 ... Ion beam column, 13 ... Bus line, 14 ... H scanning signal generation circuit, 15 ... V scanning signal generation circuit, 16 ... Rotation Scan conversion circuit, 17 ... calculation control unit, 18 ... storage unit, 19 ... display unit, 20 ... input unit, 21 ... H shift signal generation circuit, 22 ... V shift signal generation circuit, 23 ..., 24 ... adder, 31 ... Scanned image, 32, 33 ... Circle, 34, 34a ... Rectangular area, 35 ... Cursor, 36 ... Image center

Claims (6)

A step of acquiring a scanned image on the sample, a step of displaying the scanned image, a step of irradiating a portion on the sample corresponding to a designated position in the displayed scanned image, and the ion beam And a step of performing rotational deflection of the ion beam about the axis corresponding to the center of the scanned image as a rotation axis, and etching a region on the sample irradiated with the ion beam. Sample processing method. 2. The sample processing method according to claim 1, wherein the rotational deflection of the ion beam is performed together with scanning of the portion by the ion beam on the sample. 2. The sample processing method according to claim 1, wherein the rotational deflection of the ion beam is performed together with spot irradiation of the portion by the ion beam on the sample. Means for acquiring a scanned image on the sample; means for displaying the scanned image; means for designating an arbitrary location in the displayed scanned image; and on the sample corresponding to the designated location in the scanned image Means for irradiating the ion beam with the ion beam and means for rotating and deflecting the ion beam about the axis corresponding to the center of the scanned image while continuing the ion beam irradiation. A sample processing apparatus for etching a region on a prepared sample. 5. The sample processing apparatus according to claim 4, wherein the rotational deflection of the ion beam is performed together with scanning of the portion by the ion beam on the sample. The sample processing apparatus according to claim 4, wherein the rotational deflection of the ion beam is performed together with spot irradiation of the portion by the ion beam on the sample.

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