JPH0436598B2 - - Google Patents
Info
- Publication number
- JPH0436598B2 JPH0436598B2 JP60087906A JP8790685A JPH0436598B2 JP H0436598 B2 JPH0436598 B2 JP H0436598B2 JP 60087906 A JP60087906 A JP 60087906A JP 8790685 A JP8790685 A JP 8790685A JP H0436598 B2 JPH0436598 B2 JP H0436598B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- current blocking
- blocking layer
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000000903 blocking effect Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はInGaAsP活性層の周囲をInP層で埋め
込んだ埋め込みヘテロ構造半導体レーザに関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a buried heterostructure semiconductor laser in which the periphery of an InGaAsP active layer is buried with an InP layer.
埋め込みヘテロ構造半導体レーザ（BH−LD）
は低い発振しきい値電流、安定化した発振横モー
ド、高温動作可能などの優れた特性を有している
ため、光フアイバ通信用光源として注目を集めて
いる。従来の技術として、例えば特願昭56−
166666に示した構造の半導体レーザがある。この
構造は、２本のほぼ平行な溝にはさまれて形成さ
れた発光再結合する活性層を含むメサストライプ
の周囲で確実に電流ブロツク層が形成でき、した
がつて温度特性に優れ、種々の基板処理過程での
ダメージを受けることが少なく製造歩留まりの向
上したInGaAsP／InP BH−LDが提案されてい
る。
Buried heterostructure semiconductor laser (BH-LD)
Because it has excellent properties such as a low oscillation threshold current, a stabilized oscillation transverse mode, and the ability to operate at high temperatures, it is attracting attention as a light source for optical fiber communications. As a conventional technique, for example, the patent application 1986-
There is a semiconductor laser with the structure shown in 166666. This structure allows a current blocking layer to be reliably formed around a mesa stripe containing an active layer that recombines light and is sandwiched between two approximately parallel grooves, and therefore has excellent temperature characteristics and can be used in a variety of ways. An InGaAsP/InP BH-LD has been proposed, which is less susceptible to damage during the substrate processing process and has improved manufacturing yield.
しかしながら、この構造のBH−LDでは発光
再結合する活性層を含むメサストライプをはさん
でいる溝の部分においては電流ブロツク層の成長
速度が速く、Ｐ−InP電流ブロツク層、ｎ−InP
電流ブロツク層の積層に際し、特にｎ−InP電流
ブロツク層がメサストライプ上部で連続して成長
してしまうことがあり、歩留りの低下を招いてい
た。
However, in the BH-LD with this structure, the growth rate of the current blocking layer is fast in the groove part sandwiching the mesa stripes containing the active layer that undergoes luminescent recombination, and the growth rate of the current blocking layer is fast, and the growth rate of the current blocking layer is fast, and the growth rate of the current blocking layer is fast.
When stacking current blocking layers, the n-InP current blocking layer in particular may grow continuously over the mesa stripes, resulting in a decrease in yield.
本発明の目的は上記の欠点を除去すべく、メサ
ストライプ上部に形成されたｎ−InP電流ブロツ
ク層を、不純物のアウト、拡散によりＰ型領域に
変換せしめ、製造歩留りの大幅に向上したBH−
LDを提供することにある。
The purpose of the present invention is to eliminate the above-mentioned drawbacks by converting the n-InP current blocking layer formed on the top of the mesa stripe into a P-type region by removing and diffusing impurities, thereby significantly improving the manufacturing yield.
The goal is to provide LD.
本発明によれば、第１導電型半導体基板上に少
くとも活性層を含む半導体多層膜を成長させた多
層膜構造半導体ウエハアを活性層よりも深い２本
の平行な溝によりメサストライプを形成した後埋
め込み成長してなる埋め込みヘテロ構造半導体レ
ーザにおいて、前記発光再結合する活性層を含む
メサストライプの上面のみ除いて第２導電型半導
体電流ブロツク層、第１導電型半導体ブロツク層
が順次積層され、さらに、前記第１導電型半導体
ブロツク層の一部が不純物の固相拡散により前記
第２導電型領域に変換させるような高濃度の前記
不純物をドープした第２導電型半導体埋め込み層
が積層されてなることを特徴とする埋め込みヘテ
ロ構造半導体レーザが得られる。 According to the present invention, a multilayer structure semiconductor wafer in which a semiconductor multilayer film including at least an active layer is grown on a first conductivity type semiconductor substrate is formed into a mesa stripe by two parallel grooves deeper than the active layer. In a buried heterostructure semiconductor laser formed by post-buried growth, a second conductivity type semiconductor current blocking layer and a first conductivity type semiconductor block layer are sequentially laminated except for only the upper surface of the mesa stripe including the active layer that emits and recombines; Further, a second conductivity type semiconductor buried layer doped with the impurity at a high concentration is stacked such that a part of the first conductivity type semiconductor block layer is converted into the second conductivity type region by solid-phase diffusion of the impurity. A buried heterostructure semiconductor laser is obtained.
以下図面を用いて本発明を説明する。 The present invention will be explained below using the drawings.
第１図は本発明の実施例であるInGaAsP BH
−LDの断面図を示す。このようなBH−LDを作
製するには次のようにすればよい。まず（100）
ｎ−InP基板１上にｎ−InPバツフア層２
InGaAsP活性層、3P−InPクラツド層４を順次積
層された多層膜構造半導体ウエハーにＤ１１方向
に平行にInGaAsP活性層３よりも深くメサエツ
チングして幅5μm、深さ2μmの２本の平行な溝３
０，３１を作り、それにより発光再結合する活性
層を含む幅2μmのメサストライプ１０を形成す
る。このようにして得られた半導体基板上にＰ−
InP電流ブロツク層５、ｎ−InP電流ブロツク層、
６をメサ上面のみ除いて、積層させ、さらにZn
を1018／cm3以上ドープしたＰ−InP埋め込み層、
7P−InGaAsP電極層８を全面にわたつて成長さ
せ、目的のBH−LDが得られる。 Figure 1 shows an InGaAsP BH which is an embodiment of the present invention.
- Shows a cross-sectional view of the LD. Such a BH-LD can be manufactured as follows. First (100)
n-InP buffer layer 2 on n-InP substrate 1
A multilayer structure semiconductor wafer in which an InGaAsP active layer and a 3P-InP cladding layer 4 are sequentially laminated is mesa-etched in parallel to the D11 direction deeper than the InGaAsP active layer 3 to form two parallel grooves 3 with a width of 5 μm and a depth of 2 μm.
0,31, thereby forming a mesa stripe 10 with a width of 2 μm including an active layer for radiative recombination. P-
InP current blocking layer 5, n-InP current blocking layer,
6 except for the top surface of the mesa, and then layered with Zn
P-InP buried layer doped with 10 18 /cm 3 or more,
A 7P-InGaAsP electrode layer 8 is grown over the entire surface to obtain the desired BH-LD.
本発明の実施例においてはＰ−InP埋め込み層
にZnのような熱拡散しやすい不純物を高濃度に
ドープすることにより、従来例のようにｎ−InP
電流ブロツク層がメサストライプ上に積層して
も、成長過程で、Ｐ−InP埋め込み層のZn不純物
がｎ−InP電流ブロツク層中に熱拡散して、Ｐ領
域に変換される。したがつて、メサストライプ部
分に電流が流れなくなるという欠点が除去される
ため、製造歩留りが大幅に向上した。このような
BH−LDにおいて、１枚のウエハー内で発振し
きい値電流が10〜20mA、微分量子効率が50〜60
％というレーザが均一に得られ、またウエハー間
のバラツキも小さく、BH−LDの特性上の再現
性、製作歩留りが大幅に向上した。
In the embodiment of the present invention, by doping the P-InP buried layer with an impurity that is easily thermally diffused, such as Zn, the n-InP
Even if the current blocking layer is stacked on the mesa stripe, during the growth process, the Zn impurity in the P-InP buried layer is thermally diffused into the n-InP current blocking layer and converted into a P region. Therefore, the drawback that current does not flow in the mesa stripe portion is eliminated, and the manufacturing yield is significantly improved. like this
In BH-LD, the oscillation threshold current is 10 to 20 mA and the differential quantum efficiency is 50 to 60 within one wafer.
%, and the variation between wafers was small, greatly improving the reproducibility of BH-LD characteristics and manufacturing yield.
本発明の特徴は、メサストライプ上に積層した
ｎ−InP電流ブロツク層をその上に成長するＰ−
InP埋め込み層中のZn不純物の固相拡散によりＰ
型領域に変換せしめることである。したがつて高
性能なBH−LDの製造歩留りを大幅に改善する
ことができた。 The feature of the present invention is that the n-InP current blocking layer is laminated on the mesa stripe and the P-InP current blocking layer is grown on top of the n-InP current blocking layer.
Due to the solid phase diffusion of Zn impurities in the InP buried layer, P
This is to convert it into a type domain. Therefore, it was possible to significantly improve the manufacturing yield of high-performance BH-LDs.
尚、Ｐ−InP埋め込み層中に添加するZn又は
Mg濃度が1018／cm3以上必要な理由は、結晶成長
温度が600〜650℃範囲で不純物の固相拡散を有効
と活用するために必要な濃度であり実験結果では
1018／cm3を境いとして良否がはつきりした。 In addition, Zn or
The reason why the Mg concentration is required to be 10 18 /cm 3 or more is that the concentration is necessary to effectively utilize the solid phase diffusion of impurities when the crystal growth temperature is in the range of 600 to 650 °C.
10 18 / cm 3 was the boundary between good and bad results.
第１図は本発明のBH−LDの断面図である。
１……ｎ形InP基板、２……ｎ形InPバツフア
層、３……InGaAsP活性層、４……Ｐ形InPクラ
ツド層、５……Ｐ形InPブロツク層、６……ｎ形
InPブロツク層、７……Ｐ形InP埋め込み層、８
……Ｐ形InGaAsPキヤツプ層、１０……メサス
トライプ、３０および３１……互いに平行な溝、
３ｍ……メサストライプ１０中の活性層光導波
路、４ｍ……Ｐ形InPクラツド層メサ部、２０…
…Ｐ側電極、２１……ｎ型電極である。
FIG. 1 is a sectional view of the BH-LD of the present invention. 1...n-type InP substrate, 2...n-type InP buffer layer, 3...InGaAsP active layer, 4...P-type InP cladding layer, 5...P-type InP block layer, 6...n-type
InP block layer, 7... P-type InP buried layer, 8
... P-type InGaAsP cap layer, 10 ... mesa stripe, 30 and 31 ... mutually parallel grooves,
3m...Active layer optical waveguide in mesa stripe 10, 4m...P-type InP clad layer mesa portion, 20...
...P-side electrode, 21...n-type electrode.
１ 銅、アルミニウム、鉄、ニツケル、クロムも
しくは亜鉛の単体金属またはこれらの合金からな
る導電性金属箔帯で構成された導電回路パターン
を水溶性接着剤を塗布した転写用台紙上に、少な
くとも熱酸化で消失機能を有する合成樹脂からな
るオーバーコート層を介して一体化した回路パタ
ーン転写紙を用いてその転写紙からホーロ基板に
前記回路パターンを転写、ホーロ基板を構成する
ガラス層が軟化流動する温度以上で、加熱するこ
とにより、前記オーバーコート層が熱消失すると
ともに、前記基板上に導電回路を形成することを
特徴とする導電回路の形成法。
1. A conductive circuit pattern composed of a conductive metal foil strip made of a single metal such as copper, aluminum, iron, nickel, chromium, or zinc or an alloy thereof is placed on a transfer mount coated with a water-soluble adhesive and subjected to at least thermal oxidation. The circuit pattern is transferred from the transfer paper to the hollow substrate using a circuit pattern transfer paper integrated through an overcoat layer made of a synthetic resin having a vanishing function at a temperature at which the glass layer constituting the hollow substrate softens and flows. The above method for forming a conductive circuit is characterized in that the overcoat layer is thermally dissipated by heating, and a conductive circuit is formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8790685A JPS61247084A (en) | 1985-04-24 | 1985-04-24 | Embedded hetero-structure semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8790685A JPS61247084A (en) | 1985-04-24 | 1985-04-24 | Embedded hetero-structure semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61247084A JPS61247084A (en) | 1986-11-04 |
| JPH0436598B2 true JPH0436598B2 (en) | 1992-06-16 |
Family
ID=13927951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8790685A Granted JPS61247084A (en) | 1985-04-24 | 1985-04-24 | Embedded hetero-structure semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61247084A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0690063A (en) * | 1992-07-20 | 1994-03-29 | Toyota Motor Corp | Semiconductor laser |
| JP2973794B2 (en) * | 1993-09-24 | 1999-11-08 | トヨタ自動車株式会社 | Semiconductor laser |
| DE59900742D1 (en) | 1998-01-30 | 2002-02-28 | Osram Opto Semiconductors Gmbh | SEMICONDUCTOR LASER CHIP |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200484A (en) * | 1983-04-28 | 1984-11-13 | Nec Corp | Semiconductor laser |
-
1985
- 1985-04-24 JP JP8790685A patent/JPS61247084A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200484A (en) * | 1983-04-28 | 1984-11-13 | Nec Corp | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61247084A (en) | 1986-11-04 |
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