JPH0436597B2 - - Google Patents
Info
- Publication number
- JPH0436597B2 JPH0436597B2 JP26799685A JP26799685A JPH0436597B2 JP H0436597 B2 JPH0436597 B2 JP H0436597B2 JP 26799685 A JP26799685 A JP 26799685A JP 26799685 A JP26799685 A JP 26799685A JP H0436597 B2 JPH0436597 B2 JP H0436597B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- absorption
- semiconductor laser
- beam splitter
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 description 46
- 238000010521 absorption reaction Methods 0.000 description 35
- 229920006395 saturated elastomer Polymers 0.000 description 24
- 238000010586 diagram Methods 0.000 description 18
- 239000000523 sample Substances 0.000 description 18
- 230000000087 stabilizing effect Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 238000004847 absorption spectroscopy Methods 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- 230000006641 stabilisation Effects 0.000 description 7
- 238000011105 stabilization Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000001675 atomic spectrum Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26799685A JPS62128184A (ja) | 1985-11-28 | 1985-11-28 | 半導体レ−ザ安定化装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26799685A JPS62128184A (ja) | 1985-11-28 | 1985-11-28 | 半導体レ−ザ安定化装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62128184A JPS62128184A (ja) | 1987-06-10 |
| JPH0436597B2 true JPH0436597B2 (enrdf_load_stackoverflow) | 1992-06-16 |
Family
ID=17452461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26799685A Granted JPS62128184A (ja) | 1985-11-28 | 1985-11-28 | 半導体レ−ザ安定化装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62128184A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2761505B2 (ja) * | 1990-09-26 | 1998-06-04 | 日本電信電話株式会社 | 波長安定化レーザ装置 |
| JPH04116173U (ja) * | 1991-03-26 | 1992-10-16 | 横河電機株式会社 | 周波数安定化レ―ザ光源 |
| US5706301A (en) * | 1995-08-16 | 1998-01-06 | Telefonaktiebolaget L M Ericsson | Laser wavelength control system |
| JP4547513B2 (ja) * | 2004-09-01 | 2010-09-22 | 独立行政法人情報通信研究機構 | 多重飽和分光によるレーザー周波数安定化装置 |
| US7820937B2 (en) * | 2004-10-27 | 2010-10-26 | Boston Scientific Scimed, Inc. | Method of applying one or more electromagnetic beams to form a fusion bond on a workpiece such as a medical device |
-
1985
- 1985-11-28 JP JP26799685A patent/JPS62128184A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62128184A (ja) | 1987-06-10 |
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