JPH04364729A - Apparatus for chamfering wafer notch - Google Patents

Apparatus for chamfering wafer notch

Info

Publication number
JPH04364729A
JPH04364729A JP3167754A JP16775491A JPH04364729A JP H04364729 A JPH04364729 A JP H04364729A JP 3167754 A JP3167754 A JP 3167754A JP 16775491 A JP16775491 A JP 16775491A JP H04364729 A JPH04364729 A JP H04364729A
Authority
JP
Japan
Prior art keywords
wafer
grindstone
drive mechanism
chamfering
notch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3167754A
Other languages
Japanese (ja)
Other versions
JP2652090B2 (en
Inventor
Kaoru Hosokawa
薫 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP16775491A priority Critical patent/JP2652090B2/en
Priority to DE1992600745 priority patent/DE69200745T2/en
Priority to EP19920305323 priority patent/EP0518642B1/en
Publication of JPH04364729A publication Critical patent/JPH04364729A/en
Application granted granted Critical
Publication of JP2652090B2 publication Critical patent/JP2652090B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To enable chamfering work easily and surely to a notch, to achieve chamfering work to this notch, and to simplify a constitution. CONSTITUTION:The following are provided: a rotary disc-shaped grindstone 16; a wafer-holding mechanism 14 that holds a wafer 12; a first drive mechanism 15 rotated over a predetermined range of angles around its center axis (in the arrow theta direction); and a second drive mechanism 20 that advances and retreats the wafer 12 in the arrow X direction; and a third drive mechanism 22 that advances and retreats the grindstone 16 in the Z direction. This grindstone 16 has a substrate 52 made of an elastic material and a plurality of grind grains 54 buried in the peripheral face of the substrate 52.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、半導体ウエーハの面取
り加工装置に関し、特に弾性砥石により行うウエーハの
ノッチ部面取り装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer chamfering device, and more particularly to a wafer notch chamfering device using an elastic grindstone.

【0002】0002

【従来の技術】従来より、半導体ウエーハ等のウエーハ
には、ホトリソグラフィーの適用上、露光装置において
、その方位を合わせ易くするために、このウエーハの外
周部の一部を直線状に研削してオリエンテーションフラ
ット(以下、OFという)が形成されている。
[Prior Art] Conventionally, when applying photolithography to wafers such as semiconductor wafers, a portion of the outer periphery of the wafer is ground into a straight line in order to facilitate alignment of the wafer in an exposure device. An orientation flat (hereinafter referred to as OF) is formed.

【0003】ところが、このOFを設けるために多くの
除去部分が発生してしまい、特に直径の大きなウエーハ
では、この除去部分が相当な面積となって歩留りが著し
く低下することになる。これにより、高価な半導体ウエ
ーハを効率的に利用することができないという問題が指
摘されている。
However, in order to provide this OF, a large amount of removed portion is generated, and especially in the case of a wafer having a large diameter, this removed portion becomes a considerable area, resulting in a significant decrease in yield. This has led to the problem that expensive semiconductor wafers cannot be used efficiently.

【0004】そこで、ウエーハを歩留りよく活用するた
めに、このウエーハの外周部に略V字状や略円弧状等の
形状を有するノッチ部を形成することが行われている。 特に、V字状のノッチ部は、位置決め精度に優れる等の
利点から広範に採用されている。この場合、ウエーハは
、デバイス製造工程等においてライン上を何回も搬送さ
れるため、ウェーハの外周において、同製造工程に用い
られる装置の一部と接触し外周部位の欠けやチップが発
生してこれによりデバイスの特性劣化等を招来してしま
うため、従来からウエーハの外周部位に面取り加工が施
されている。
[0004] Therefore, in order to utilize the wafer at a high yield, a notch portion having a substantially V-shape, a substantially arc-shape, or the like is formed on the outer peripheral portion of the wafer. In particular, V-shaped notches are widely used because of their superior positioning accuracy. In this case, since the wafer is transported many times on the line during the device manufacturing process, the outer periphery of the wafer may come into contact with some of the equipment used in the same manufacturing process, causing chips or chips on the outer periphery. Since this may lead to deterioration of device characteristics, chamfering has conventionally been performed on the outer periphery of the wafer.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記ノ
ッチ部を有するウエーハでは、従来このノッチ部の寸法
がウェーハ外周長と比較して小さいため、面取り加工を
必要としなかった。デバイス製造工程において前記ノッ
チ部を硬質のピンに係合させてウエーハの位置決めをす
る際に、前記ノッチ部に欠けが発生するという問題があ
り、特にシャープエッジの除去加工が困難なため、これ
により粉塵の発生が多くなるとともに、欠け等を防止す
ることができないという問題が無視できない様になった
[Problems to be Solved by the Invention] However, conventionally, in the case of a wafer having the above-mentioned notch portion, chamfering was not required because the dimensions of the notch portion were smaller than the outer circumferential length of the wafer. In the device manufacturing process, when the notch is engaged with a hard pin to position the wafer, there is a problem in that the notch is chipped, and it is particularly difficult to remove sharp edges. As dust generation increases, the problem of not being able to prevent chips and the like has become impossible to ignore.

【0006】本発明は、この種の問題に鑑みなされたも
のであり、ノッチ部のシャープエッジ等に対しても容易
にかつ確実に面取り加工を施すことができ、このノッチ
部の面取り加工作業を効率的に遂行することが可能な、
しかも構成の簡単なウエーハのノッチ部面取り装置を提
供することを目的とする。
The present invention has been developed in view of this type of problem, and can easily and reliably chamfer even the sharp edges of notches. can be carried out efficiently,
Moreover, it is an object of the present invention to provide a wafer notch chamfering device having a simple configuration.

【0007】[0007]

【課題を解決するための手段】前記の目的を達成するた
めに、本発明は、回転する円板状砥石と、ウエーハを保
持するウエーハ保持機構と、前記砥石とウエーハとを、
相対的に移動させる駆動機構とを備え、前記砥石は、弾
性材料基材と、その中に埋設または分散固定された砥粒
とを有することを特徴とする。
[Means for Solving the Problems] In order to achieve the above object, the present invention provides a rotating disk-shaped grindstone, a wafer holding mechanism that holds a wafer, and a rotating disk-shaped grindstone, a wafer holding mechanism that holds the grindstone and the wafer,
The grinding wheel is equipped with a drive mechanism for relatively moving the grinding wheel, and the grinding wheel is characterized in that it has an elastic material base material and abrasive grains embedded or dispersedly fixed therein.

【0008】[0008]

【作用】上記の本発明に係るウエーハのノッチ部面取り
装置では、駆動機構の作用下に砥石とウエーハとが、相
対的に移動しながらこのウエーハのノッチ部の面取り加
工が遂行される。その際に、砥石を構成する基材が弾性
材料で形成されており、その弾性力を介して砥粒が面取
り部位に圧接されるため、この面取り部位に鋭い角部が
残存することを容易に阻止することができる。
[Operation] In the wafer notch chamfering apparatus according to the present invention, the grinding wheel and the wafer move relative to each other under the action of the drive mechanism to chamfer the notch of the wafer. At that time, the base material that makes up the whetstone is made of an elastic material, and the abrasive grains are pressed against the chamfered part through its elastic force, so it is easy to prevent sharp corners from remaining in the chamfered part. can be prevented.

【0009】砥石はその基材が弾性材料で構成されるた
め、砥石の外周端断面形状がその底部にR部を有する略
V字形であり、そのV字の側線のなす角度を、ノッチ部
平面図形の該当角度及びノッチ部のウエーハ中心方向先
端のRに対し、若干大きくするならば、砥石が当該ノッ
チに、砥石の回転中心をウエーハ面位置よりも高い位置
に設定して当接せしめ研削すれば、ノッチ部の面取りは
、単に砥石の上下方向の微動のみで完了することができ
る。砥石の基材の柔らかさを適宜調節することによって
、砥石面に由来する面取り部の凹み曲面の形成は除外さ
れ、むしろ外方に突出するなだらかな曲面を有する理想
的なノッチ部面取りが可能となる。この場合には、特許
請求の範囲に記載の第1、第2、第3駆動機構のうち特
に第1及び第2駆動機構は砥石の当接位置を面取り加工
前に精密に制御調節されるために用いられることになる
[0009] Since the base material of the whetstone is made of an elastic material, the cross-sectional shape of the outer peripheral end of the whetstone is approximately V-shaped with an R section at the bottom, and the angle formed by the side line of the V-shape is defined as the notch plane. If the corresponding angle of the figure and the R of the tip of the notch toward the wafer center are made slightly larger, the grinding wheel can be brought into contact with the notch with the center of rotation of the grinding wheel set at a position higher than the wafer surface position. For example, the chamfering of the notch portion can be completed by simply slightly moving the grindstone in the vertical direction. By appropriately adjusting the softness of the base material of the grinding wheel, the formation of a concave curved surface on the chamfered portion due to the grinding wheel surface can be eliminated, and rather an ideal notch chamfering with a gently curved surface protruding outward can be achieved. Become. In this case, especially among the first, second, and third drive mechanisms recited in the claims, the contact position of the grindstone is precisely controlled and adjusted before the chamfering process. It will be used for

【0010】0010

【実施例】本発明に係るウエーハのノッチ部面取り装置
について実施例を挙げ、添付の図面を参照して説明する
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the wafer notch chamfering apparatus according to the present invention will be described with reference to the accompanying drawings.

【0011】図1において、参照符号10は、本実施例
に係るノッチ部面取り装置を示す。このノッチ部面取り
装置10は、ウエーハ12を所定の姿勢で保持するウエ
ーハ保持機構14と、このウエーハ12をその主面に垂
直な中心軸の回り(矢印θ方向)に所定の角度範囲で回
転させる第1駆動機構15と、円板状の砥石16を、そ
の面が前記ウエーハ12の面と交差(実施例では、直交
)するように装着する回転駆動機構18と、前記砥石1
6とウエーハ12とを、前記砥石16の半径方向(矢印
X方向)に相対的に進退移動させるために前記ウエーハ
保持機構14に設けられた第2駆動機構20と、砥石1
6とウエーハ12とを、前記ウエーハ12の板厚方向(
矢印Z方向)に相対的に進退移動させるために前記回転
駆動機構18に設けられた第3駆動機構22とを備える
In FIG. 1, reference numeral 10 indicates a notch chamfering device according to this embodiment. This notch chamfering device 10 includes a wafer holding mechanism 14 that holds a wafer 12 in a predetermined posture, and a wafer holding mechanism 14 that rotates the wafer 12 around a central axis perpendicular to its main surface (in the direction of arrow θ) within a predetermined angular range. a first drive mechanism 15; a rotary drive mechanism 18 for mounting a disk-shaped grindstone 16 so that its surface intersects (orthogonally in the embodiment) the surface of the wafer 12;
6 and the wafer 12 relative to each other in the radial direction of the grindstone 16 (in the direction of arrow X).
6 and the wafer 12 in the thickness direction of the wafer 12 (
and a third drive mechanism 22 provided on the rotary drive mechanism 18 for relative movement forward and backward in the direction of arrow Z).

【0012】ウエーハ保持機構14は、基台28を備え
、この基台28に筒状部30が設けられ、この筒状部3
0に回転台32が配置されるとともに、この回転台32
の上端面に図示しない真空ポンプに連通してウエーハ1
2を吸着するための複数の吸引穴34が形成される。 第1駆動機構15は、サーボモータであるパルスモータ
36を備え、このパルスモータ36に送りねじ38が連
結されるとともに、この送りねじ38が回転台32に同
軸的に係合している。
The wafer holding mechanism 14 includes a base 28 , and a cylindrical portion 30 is provided on the base 28 .
A rotary table 32 is arranged at 0, and this rotary table 32
The wafer 1 is connected to a vacuum pump (not shown) on the upper end surface.
A plurality of suction holes 34 are formed for sucking 2. The first drive mechanism 15 includes a pulse motor 36 that is a servo motor, and a feed screw 38 is connected to the pulse motor 36, and the feed screw 38 is coaxially engaged with the rotary table 32.

【0013】第2駆動機構20は、パルスモータ40を
備え、このパルスモータ40の回転軸に連結された送り
ねじ42が、ウエーハ保持機構14に係合している。回
転駆動機構18は、電動モータ44を備え、この電動モ
ータ44の回転軸46に砥石16が回転自在に固定され
る。この回転駆動機構18に第3駆動機構22を構成す
るパルスモータ48に連結された送りねじ50が係合す
る。
The second drive mechanism 20 includes a pulse motor 40 , and a feed screw 42 connected to the rotating shaft of the pulse motor 40 engages with the wafer holding mechanism 14 . The rotational drive mechanism 18 includes an electric motor 44, and the grindstone 16 is rotatably fixed to a rotating shaft 46 of the electric motor 44. A feed screw 50 connected to a pulse motor 48 constituting the third drive mechanism 22 engages with this rotational drive mechanism 18 .

【0014】砥石16は、弾性材料、例えばウレタンゴ
ム等の合成樹脂系材料で形成される基板部52と、研削
面となるこの基板部52の比較的軟質な周面部に埋設さ
れた砥粒54とを有する。また、砥石16は、合成樹脂
系基材に砥粒を分散したものを円板状に成形し、その外
周部を本発明の研削に用いても良い。
The grinding wheel 16 includes a base portion 52 made of an elastic material, for example, a synthetic resin material such as urethane rubber, and abrasive grains 54 embedded in a relatively soft peripheral surface of the base portion 52, which serves as a grinding surface. and has. Further, the grindstone 16 may be formed into a disk shape by dispersing abrasive grains in a synthetic resin base material, and the outer peripheral portion of the disk may be used for the grinding of the present invention.

【0015】次に、このように構成されるノッチ部面取
り装置10の動作について説明する。まず円板状のウエ
ーハ12が、ウエーハ保持機構14を構成する回転台3
2上に配置され、図示しない真空ポンプの作用下に吸引
穴34を介してこの回転台32に吸着される。そして、
ウエーハ12のノッチ部24と砥石16とが、それぞれ
の面を互いに直交して所定の位置に配置された後に、第
1駆動機構15乃至第3駆動機構22が選択的に、ある
いは同期的に駆動制御される。このため、パルスモータ
36の作用下に送りねじ38を介して回転台32が、矢
印θ方向に所定の回転速度で回転されるとともに、パル
スモータ40の作用下に送りねじ42が回転されてウエ
ーハ保持機構14が矢印X方向に進退移動する。一方、
電動モータ44の駆動作用下に回転軸46を介して砥石
16が回転される。従って、ウエーハ12と回転する砥
石16とが、相対的に近接または離間する方向に移動し
ながら、このウエーハ12が矢印θ方向に回転されて、
ウエーハ12のノッチ部24の角部12aの一部内周長
方向に面取り加工が施される(図2参照)。
Next, the operation of the notch chamfering device 10 constructed as described above will be explained. First, a disk-shaped wafer 12 is placed on a rotary table 3 that constitutes a wafer holding mechanism 14.
2, and is attracted to this rotating table 32 through a suction hole 34 under the action of a vacuum pump (not shown). and,
After the notch portion 24 of the wafer 12 and the grindstone 16 are arranged at predetermined positions with their respective surfaces orthogonal to each other, the first to third drive mechanisms 15 to 22 are selectively or synchronously driven. controlled. Therefore, under the action of the pulse motor 36, the turntable 32 is rotated at a predetermined rotational speed in the direction of arrow θ via the feed screw 38, and under the action of the pulse motor 40, the feed screw 42 is rotated to remove the wafer. The holding mechanism 14 moves forward and backward in the direction of arrow X. on the other hand,
The grindstone 16 is rotated via the rotating shaft 46 under the driving action of the electric motor 44 . Therefore, while the wafer 12 and the rotating grindstone 16 move toward or away from each other, the wafer 12 is rotated in the direction of the arrow θ.
A corner portion 12a of the notch portion 24 of the wafer 12 is partially chamfered in the length direction of the inner circumference (see FIG. 2).

【0016】ノッチ部24の角部24aの一部内周長方
向に面取り加工を行いながら、図2に示すように、砥石
16がこの角部24aに沿って矢印方向に比較的低速で
移動される。すなわち、第3駆動機構22を構成するパ
ルスモータ48に駆動信号が導出されると、このパルス
モータ48を介して送りねじ50が所定方向に回転され
、この送りねじ50に係合している回転駆動機構18が
、矢印Z1方向にゆっくりと移動する。これに同期して
パルスモータ40が駆動されて砥石16とウエーハ12
とが相対的に矢印X1に移動され、この砥石16が角部
24aに対応して位置決めされる。従って、上述したよ
うに、角部24aの一部円周方向の面取り加工が終了し
た後に、この角部24aの他部内周長方向の面取り加工
が連続的に行われる。
While chamfering a part of the corner 24a of the notch 24 in the direction of the inner circumference, the grindstone 16 is moved at a relatively low speed in the direction of the arrow along this corner 24a, as shown in FIG. . That is, when a drive signal is derived to the pulse motor 48 constituting the third drive mechanism 22, the feed screw 50 is rotated in a predetermined direction via the pulse motor 48, and the rotation engaged with the feed screw 50 is rotated. The drive mechanism 18 moves slowly in the direction of arrow Z1. In synchronization with this, the pulse motor 40 is driven to drive the grindstone 16 and the wafer 12.
are relatively moved in the direction of arrow X1, and this grindstone 16 is positioned corresponding to the corner 24a. Therefore, as described above, after chamfering of a portion of the corner 24a in the circumferential direction is completed, chamfering of the other portion of the corner 24a in the inner circumferential length direction is continuously performed.

【0017】次に、ウエーハ12の周面部24bおよび
角部24cを、同様に所定の間隔で複数回にわたって連
続的に整形加工する。ここで、ウエーハ12の主平面に
垂直な外周側周面部24bの加工中は、砥石16が矢印
Z2方向に移動される一方、角部24cの加工中は、砥
石16とウエーハ12とが、矢印X2,Z3方向に相対
移動される。これによって、ウエーハ12の円周方向と
板厚方向との面取り加工が、連続的にかつ効率的に遂行
されるという効果が得られる。
Next, the circumferential surface portion 24b and corner portion 24c of the wafer 12 are similarly shaped continuously a plurality of times at predetermined intervals. Here, while processing the outer peripheral surface portion 24b perpendicular to the main plane of the wafer 12, the grindstone 16 is moved in the direction of the arrow Z2, while during processing the corner portion 24c, the grindstone 16 and the wafer 12 are moved in the direction indicated by the arrow Z2. It is relatively moved in the X2 and Z3 directions. This provides the effect that chamfering in the circumferential direction and the thickness direction of the wafer 12 can be performed continuously and efficiently.

【0018】この場合、本実施例では、砥石16が、弾
性材料で形成された基板部52を有するため、この砥石
16をウエーハ12に所定の押圧力で圧接させた状態で
このウエーハ12の面取り加工を行うことができる。す
なわち、図3に示すように、砥石16がウエーハ12に
圧接されると、この砥石16を構成する基板部52の比
較的軟質な周面部が変形してこのウエーハ12に押圧さ
れる。このため、周面部に埋設されている砥粒54が、
ウエーハ12に広く接触してこのウエーハ12を研削し
、特に前記ウエーハ12の被研削面の角部A乃至D(図
4中、二点鎖線参照)を研削してこの角部A乃至DにR
(図4中、実線参照)を設けることが可能になる。 従って、この角部A乃至Dで欠けやチップが発生するこ
とがなく、複雑な制御を不要にして簡単な構成で角部A
乃至Dに容易にRを形成することができるという効果が
得られる。
In this case, in this embodiment, since the grinding wheel 16 has a substrate portion 52 made of an elastic material, the wafer 12 is chamfered while the grinding wheel 16 is pressed against the wafer 12 with a predetermined pressing force. Can be processed. That is, as shown in FIG. 3, when the grindstone 16 is pressed against the wafer 12, the relatively soft peripheral surface of the base plate 52 forming the grindstone 16 is deformed and pressed against the wafer 12. Therefore, the abrasive grains 54 embedded in the peripheral surface are
The wafer 12 is ground by widely contacting the wafer 12, and in particular, the corners A to D (see the two-dot chain line in FIG. 4) of the surface to be ground of the wafer 12 are ground, and R is applied to the corners A to D.
(See the solid line in FIG. 4). Therefore, no chipping or chipping occurs at the corners A to D, and the corner A can be easily controlled without complicated control.
The effect that R can be easily formed on D to D can be obtained.

【0019】特に、ウエーハ12の面と砥石16の面と
が直交するように配置されることにより、このウエーハ
12の寸法に比べて相当に小さなノッチ部24の被研削
面に、砥石16の研削面を介して高精度な面取り加工を
行うことができるという利点が得られる。
In particular, by arranging the surface of the wafer 12 and the surface of the grindstone 16 to be perpendicular to each other, the grinding surface of the grindstone 16 is applied to the surface to be ground of the notch portion 24, which is considerably smaller than the size of the wafer 12. The advantage is that highly accurate chamfering can be performed through the surface.

【0020】また、本実施例では、ノッチ部24の円周
方向に面取り加工を行いながら、砥石16をウエーハ1
2の板厚方向(矢印Z方向)に移動させて、このノッチ
部24全体の面取り作業を行う場合について説明したが
、逆に前記ノッチ部24の板厚方向の面取りを行いなが
ら、砥石16とウエーハ12とをこのウエーハ12の円
周方向に移動させて面取り作業を行うことができる。
Further, in this embodiment, while chamfering the notch portion 24 in the circumferential direction, the grinding wheel 16 is placed on the wafer 1.
2 in the board thickness direction (arrow Z direction) to chamfer the entire notch part 24. However, conversely, while chamfering the notch part 24 in the board thickness direction, the grindstone 16 and The chamfering operation can be performed by moving the wafer 12 in the circumferential direction of the wafer 12.

【0021】すなわち、第2駆動機構20と第3駆動機
構22とを同期して駆動制御することにより、ウエーハ
12を矢印X方向に移動させながら砥石16を矢印Z方
向に移動させて、ノッチ部24の板厚方向の一部に面取
り加工を行うとともに、パルスモータ36を比較的低速
で回転駆動させてこのウエーハ12をその中心軸の回り
(矢印θ方向)にゆっくりと回転させる。これにより、
砥石16は、ノッチ部24の板厚方向に面取りしながら
このノッチ部24の円周方向に連続して面取り作業を行
うことが可能になる。
That is, by driving and controlling the second drive mechanism 20 and the third drive mechanism 22 in synchronization, the grindstone 16 is moved in the direction of arrow Z while moving the wafer 12 in the direction of arrow X, and the notch portion is moved. A part of the wafer 24 in the thickness direction is chamfered, and the pulse motor 36 is rotated at a relatively low speed to slowly rotate the wafer 12 around its central axis (in the direction of the arrow θ). This results in
The grindstone 16 can chamfer the notch portion 24 in the thickness direction thereof while continuously chamfering the notch portion 24 in the circumferential direction.

【0022】[0022]

【発明の効果】本発明に係るウエーハのノッチ部面取り
装置によれば、以下の効果が得られる。駆動機構の作用
下に砥石とウエーハとが、相対的に移動しながらこのウ
エーハのノッチ部の面取り加工が遂行される際に、この
砥石を構成する基板部が弾性材料で形成されているため
、その弾性力を介して砥粒が面取り部位に圧接されるた
め、この面取り部位に鋭い角部が残存することを容易に
阻止することができる。このため、弾性砥石を使用する
という簡単な構成で、寸法の小さなノッチ部の円周方向
および/または板厚方向の面取り加工を高精度にかつ効
率的に遂行することが可能になる。
According to the wafer notch chamfering apparatus according to the present invention, the following effects can be obtained. When chamfering the notch portion of the wafer while the grinding wheel and the wafer move relative to each other under the action of the drive mechanism, since the substrate portion constituting the grinding wheel is formed of an elastic material, Since the abrasive grains are pressed against the chamfered portion through the elastic force, it is possible to easily prevent sharp corners from remaining in the chamfered portion. Therefore, with a simple configuration of using an elastic grindstone, it is possible to chamfer a small notch portion in the circumferential direction and/or the thickness direction with high precision and efficiency.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の実施例に係るウエーハのノッチ部面取
り装置の斜視説明図である。
FIG. 1 is a perspective explanatory view of a wafer notch chamfering device according to an embodiment of the present invention.

【図2】ノッチ部の板厚方向の面取り加工作業の説明図
である。
FIG. 2 is an explanatory diagram of a chamfering operation in the thickness direction of a notch portion.

【図3】ウエーハの面取り加工後の説明図である。FIG. 3 is an explanatory diagram after the wafer is chamfered.

【図4】砥石の基板部がウエーハに押圧されて変形した
状態の説明図である。
FIG. 4 is an explanatory diagram of a state in which the substrate portion of the grindstone is deformed by being pressed by a wafer.

【符号の説明】[Explanation of symbols]

10  ノッチ部面取り装置 12  ウエーハ 14  ウエーハ保持機構 15  駆動機構 16  砥石 18  回転駆動機構 20,22  駆動機構 24  ノッチ部 32  回転台 36,40,48  パルスモータ 52  基板部 54  砥粒 10 Notch chamfering device 12 Wafer 14 Wafer holding mechanism 15 Drive mechanism 16 Whetstone 18 Rotation drive mechanism 20, 22 Drive mechanism 24 Notch part 32 Turntable 36, 40, 48 pulse motor 52 Board part 54 Abrasive grain

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】  回転する円板状砥石と、ウエーハを保
持するウエーハ保持機構と、前記砥石とウエーハとを、
相対的に移動させる駆動機構とを備え、前記砥石は、弾
性材料基材と、その中に埋設または分散固定された砥粒
とを有することを特徴とするウエーハのノッチ部面取り
装置。
1. A rotating disc-shaped grindstone, a wafer holding mechanism that holds a wafer, and a rotating disc-shaped grindstone, the grindstone and the wafer comprising:
1. A device for chamfering a notch portion of a wafer, comprising a drive mechanism for relatively moving the grindstone, and the grindstone has an elastic material base material and abrasive grains embedded or dispersedly fixed therein.
【請求項2】  請求項1記載の装置において、ウエー
ハ保持機構は、ウエーハの面を砥石の面と交差するよう
に配置させることを特徴とするウエーハのノッチ部面取
り装置。
2. The apparatus for chamfering a notch portion of a wafer according to claim 1, wherein the wafer holding mechanism is arranged so that the surface of the wafer intersects the surface of the grindstone.
【請求項3】  請求項1記載の装置において、駆動機
構は、ウエーハのノッチ部の被研削面を砥石の研削面に
対して連続的に位置決めして研削するために、前記ウエ
ーハをその中心軸の回りに所定の角度範囲で回転可能な
第1駆動機構と、前記砥石とウエーハとを、互いに近接
または離間する方向に相対的に進退移動させる第2駆動
機構と、砥石とウエーハとを、前記ウエーハの板厚方向
に相対的に進退移動させる第3駆動機構とを備えること
を特徴とするウエーハのノッチ部面取り装置。
3. The apparatus according to claim 1, wherein the drive mechanism rotates the wafer along its central axis in order to continuously position and grind the surface to be ground of the notch portion of the wafer with respect to the grinding surface of the grindstone. a first drive mechanism that is rotatable around a predetermined angular range; a second drive mechanism that moves the grindstone and the wafer relatively forward and backward in a direction toward or away from each other; A wafer notch chamfering device characterized by comprising a third drive mechanism that relatively moves the wafer forward and backward in the thickness direction of the wafer.
【請求項4】  請求項1記載の装置において、基材は
、合成樹脂系材料であることを特徴とするウエーハのノ
ッチ部面取り装置。
4. The apparatus for chamfering a notch portion of a wafer according to claim 1, wherein the base material is a synthetic resin material.
JP16775491A 1991-06-12 1991-06-12 Wafer notch chamfering device Expired - Fee Related JP2652090B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16775491A JP2652090B2 (en) 1991-06-12 1991-06-12 Wafer notch chamfering device
DE1992600745 DE69200745T2 (en) 1991-06-12 1992-06-10 Device for chamfering the notch of a plate.
EP19920305323 EP0518642B1 (en) 1991-06-12 1992-06-10 Apparatus for chamfering notch of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16775491A JP2652090B2 (en) 1991-06-12 1991-06-12 Wafer notch chamfering device

Publications (2)

Publication Number Publication Date
JPH04364729A true JPH04364729A (en) 1992-12-17
JP2652090B2 JP2652090B2 (en) 1997-09-10

Family

ID=15855480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16775491A Expired - Fee Related JP2652090B2 (en) 1991-06-12 1991-06-12 Wafer notch chamfering device

Country Status (3)

Country Link
EP (1) EP0518642B1 (en)
JP (1) JP2652090B2 (en)
DE (1) DE69200745T2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07124853A (en) * 1993-10-29 1995-05-16 Shin Etsu Handotai Co Ltd Polishing device for notch section of wafer
US6302769B1 (en) 1998-04-13 2001-10-16 Nippei Toyama Corporation Method for chamfering a wafer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2798345B2 (en) * 1993-06-11 1998-09-17 信越半導体株式会社 Wafer notch polishing machine
CN111975532B (en) * 2020-08-25 2021-08-31 叶怡晴 Monocrystalline silicon wafer chamfering equipment with aligning device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144966A (en) * 1986-12-08 1988-06-17 Sumitomo Electric Ind Ltd Wheel for grinding iii-v group compound semiconductor wafer
JPH0287523A (en) * 1988-09-26 1990-03-28 Shin Etsu Handotai Co Ltd Method and equipment for bevelling semiconductor wafer notch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905425A (en) * 1988-09-30 1990-03-06 Shin-Etsu Handotai Company Limited Method for chamfering the notch of a notch-cut semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144966A (en) * 1986-12-08 1988-06-17 Sumitomo Electric Ind Ltd Wheel for grinding iii-v group compound semiconductor wafer
JPH0287523A (en) * 1988-09-26 1990-03-28 Shin Etsu Handotai Co Ltd Method and equipment for bevelling semiconductor wafer notch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07124853A (en) * 1993-10-29 1995-05-16 Shin Etsu Handotai Co Ltd Polishing device for notch section of wafer
US6302769B1 (en) 1998-04-13 2001-10-16 Nippei Toyama Corporation Method for chamfering a wafer

Also Published As

Publication number Publication date
JP2652090B2 (en) 1997-09-10
DE69200745T2 (en) 1995-07-13
DE69200745D1 (en) 1995-01-12
EP0518642A1 (en) 1992-12-16
EP0518642B1 (en) 1994-11-30

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