JPH0436257U - - Google Patents
Info
- Publication number
- JPH0436257U JPH0436257U JP7761590U JP7761590U JPH0436257U JP H0436257 U JPH0436257 U JP H0436257U JP 7761590 U JP7761590 U JP 7761590U JP 7761590 U JP7761590 U JP 7761590U JP H0436257 U JPH0436257 U JP H0436257U
- Authority
- JP
- Japan
- Prior art keywords
- region
- back gate
- gate region
- conductivity type
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077615U JP2523466Y2 (ja) | 1990-07-20 | 1990-07-20 | トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077615U JP2523466Y2 (ja) | 1990-07-20 | 1990-07-20 | トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0436257U true JPH0436257U (US07534539-20090519-C00280.png) | 1992-03-26 |
| JP2523466Y2 JP2523466Y2 (ja) | 1997-01-22 |
Family
ID=31620166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990077615U Expired - Lifetime JP2523466Y2 (ja) | 1990-07-20 | 1990-07-20 | トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2523466Y2 (US07534539-20090519-C00280.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012253752A (ja) * | 2011-05-06 | 2012-12-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8836042B2 (en) | 2008-08-11 | 2014-09-16 | Fuji Electric Co., Ltd. | Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01135072A (ja) * | 1987-11-20 | 1989-05-26 | Nissan Motor Co Ltd | 縦形ｍｏｓｆｅｔ |
-
1990
- 1990-07-20 JP JP1990077615U patent/JP2523466Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01135072A (ja) * | 1987-11-20 | 1989-05-26 | Nissan Motor Co Ltd | 縦形ｍｏｓｆｅｔ |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8836042B2 (en) | 2008-08-11 | 2014-09-16 | Fuji Electric Co., Ltd. | Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel |
| JP2012253752A (ja) * | 2011-05-06 | 2012-12-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2523466Y2 (ja) | 1997-01-22 |
