JPH04326753A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH04326753A
JPH04326753A JP3096757A JP9675791A JPH04326753A JP H04326753 A JPH04326753 A JP H04326753A JP 3096757 A JP3096757 A JP 3096757A JP 9675791 A JP9675791 A JP 9675791A JP H04326753 A JPH04326753 A JP H04326753A
Authority
JP
Japan
Prior art keywords
case
circuit board
board
manufacturing
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3096757A
Other languages
Japanese (ja)
Inventor
Hideyuki Imanaka
今中 秀行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3096757A priority Critical patent/JPH04326753A/en
Publication of JPH04326753A publication Critical patent/JPH04326753A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PURPOSE:To simplify a step of adhering a circuit board to a case, to shorten a manufacturing time and to reduce its cost by so inserting the board into a mold M that the board becomes a bottom of the case, injection molding it, integrally connecting the board to the case, and forming a recess for sealing resin simultaneously with the case. CONSTITUTION:A metal base insulating circuit board 1 is engaged within a mold M, so-called insert molded to form a case 5. Thus, since the case 5 is so integrated with the board 1 to be connected as to surround it with the board 1 as a bottom, a vessel recess for sealing resin having an opening at an upper surface is formed. Then, an electronic component 4 including a semiconductor element necessary to constitute an integrated circuit and input/output terminals are placed, and soldered. Thereafter, liquidlike sealing resin 7 is poured from the opening of the upper surface of the formed vessel, heated and cured to associate an integrated-circuit-mounted semiconductor device. Thus, its manufacturing time can be shortened, and its manufacturing cost can be reduced.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、集積回路を構成するの
に必要な半導体素子を含む電子部品を相互結線するため
に金属ベース絶縁回路基板を使用し、この絶縁回路基板
を底面として絶縁回路基板の周囲に壁面を形成し、この
中に液状樹脂を注入・封止してなる半導体装置の製造方
法に関する。
[Industrial Application Field] The present invention uses a metal-based insulated circuit board to interconnect electronic components including semiconductor elements necessary to construct an integrated circuit, and uses this insulated circuit board as the bottom surface of the insulated circuit. The present invention relates to a method of manufacturing a semiconductor device in which a wall surface is formed around a substrate, and a liquid resin is injected and sealed into the wall surface.

【0002】0002

【従来の技術】従来、金属ベース絶縁回路基板を使用し
、最終的に液状樹脂を注入・封止してなる集積回路が搭
載された半導体装置の製造方法は、図2に示すように、
まず金属ベース絶縁回路基板1上に集積回路を構成する
のに必要な半導体を含む電子部品4をハンダ付けした後
(図2(A)〜(D)参照)、この絶縁回路基板1の外
周部に、壁面となるケース5をシリコンあるいはエポキ
シ等の接着剤8で固着する(図2(E)参照)。
2. Description of the Related Art Conventionally, a method for manufacturing a semiconductor device mounted with an integrated circuit using a metal-based insulating circuit board and finally injecting and sealing with liquid resin is as shown in FIG.
First, after soldering electronic components 4 including semiconductors necessary for constructing an integrated circuit onto a metal-based insulated circuit board 1 (see FIGS. 2(A) to 2(D)), the outer periphery of this insulated circuit board 1 is soldered. Then, the case 5, which will become the wall surface, is fixed with an adhesive 8 such as silicone or epoxy (see FIG. 2(E)).

【0003】その後、入出力端子6をハンダ付けし(図
2(F)参照)、最後にケース8の内部に液状封止樹脂
7を注入・硬化して(図2(G)参照)強度ならびに信
頼性を維持できるようにしている。
After that, the input/output terminals 6 are soldered (see FIG. 2(F)), and finally, liquid sealing resin 7 is injected into the case 8 and hardened (see FIG. 2(G)) to improve the strength and We are able to maintain reliability.

【0004】なお、ケース8は熱可塑性樹脂を使用して
、射出成型によつて作られており、図中、2は銅箔パタ
ーン、3はハンダである。
The case 8 is made of thermoplastic resin by injection molding, and in the figure, 2 is a copper foil pattern and 3 is solder.

【0005】[0005]

【発明が解決しようとする課題】しかし、従来の半導体
装置の製造方法においては、封止樹脂として液状樹脂を
注入・硬化するために、その樹脂注入用の容器となる壁
面を形成するあたり、ケースをこの容器の底面となる金
属ベース絶縁回路基板に固着する、いわゆる接着工程が
必要となる。
[Problems to be Solved by the Invention] However, in the conventional manufacturing method of semiconductor devices, in order to inject and harden liquid resin as a sealing resin, when forming a wall surface that will become a container for injecting the resin, it is necessary to A so-called adhesion process is required to fix the metal-based insulated circuit board that forms the bottom of the container.

【0006】この接着工程は、一般にシリコンあるいは
エポキシ材が使用されるが、これらを使用した接着作業
は比較的時間を要し、また熱硬化性接着剤の場合は加熱
槽などの設備を必要とするためかえつて製造コストが高
くつく。
[0006] Silicone or epoxy materials are generally used in this bonding process, but bonding operations using these materials are relatively time consuming, and in the case of thermosetting adhesives, equipment such as a heating tank is required. This actually increases manufacturing costs.

【0007】本発明は、上記に鑑み、樹脂封止用の凹部
を形成するための回路基板とケースとの接着工程を簡略
することで、製造時間の短縮および低コスト化を実現し
得る半導体装置の製造方法の提供を目的とする。
In view of the above, the present invention provides a semiconductor device that can shorten manufacturing time and reduce costs by simplifying the bonding process between a circuit board and a case to form a recess for resin sealing. The purpose is to provide a manufacturing method.

【0008】[0008]

【課題を解決するための手段】本発明による課題解決手
段は、図1の如く、回路基板1の周囲を囲む枠状のケー
ス5の形成用の金型Mの内部に、回路基板1が底面とな
るようセツトして、前記金型M内に樹脂を射出すること
によりケース5を形成してケース5と回路基板1とを一
体的に接合し、前記回路基板1上に、集積回路を構成す
るのに必要な半導体素子を含む電子部品4を搭載し、そ
の後、ケース5と回路基板1とで形成された凹部に封止
樹脂7を注入して封止するものである。
[Means for Solving the Problem] As shown in FIG. 1, a circuit board 1 is placed inside a mold M for forming a frame-shaped case 5 surrounding a circuit board 1, and a circuit board 1 is placed on the bottom surface of the mold M. The case 5 is formed by injecting resin into the mold M, the case 5 and the circuit board 1 are integrally joined, and an integrated circuit is formed on the circuit board 1. Electronic components 4 including semiconductor elements necessary for this purpose are mounted, and then a sealing resin 7 is injected into the recess formed by the case 5 and the circuit board 1 to seal it.

【0009】[0009]

【作用】上記課題解決手段において、ケース5をつくる
際、回路基板1が底面となるよう回路基板1を金型Mに
インサートして射出成型し、ケース5と回路基板1とを
一体的に接合することによつて、ケース5と同時に、樹
脂封止用の凹部をつくることができるから、従来のよう
な回路基板1とケース5との接着工程を不要とし、半導
体装置の製造工程を簡略化できる。
[Operation] In the above problem solving means, when manufacturing the case 5, the circuit board 1 is inserted into the mold M and injection molded so that the circuit board 1 becomes the bottom surface, and the case 5 and the circuit board 1 are integrally joined. By doing so, the recess for resin sealing can be made at the same time as the case 5, which eliminates the need for the conventional bonding process between the circuit board 1 and the case 5, simplifying the manufacturing process of semiconductor devices. can.

【0010】0010

【実施例】以下、本発明の一実施例を図1に基づき説明
する。
[Embodiment] An embodiment of the present invention will be described below with reference to FIG.

【0011】図1は本発明の一実施例に係る半導体装置
の製造方法においてその製造工程を示す概略図である。 なお、図2に示した従来技術と同一機能部品については
同一符号を付している。
FIG. 1 is a schematic diagram showing the manufacturing steps in a method for manufacturing a semiconductor device according to an embodiment of the present invention. Note that the same reference numerals are given to the same functional parts as those of the prior art shown in FIG.

【0012】図1の如く、一般に、集積回路を搭載する
半導体装置は、ケース5内に金属ベース絶縁回路基板1
と、該絶縁回路基板1上に搭載された集積回路を構成す
るのに必要な半導体素子を含む電子部品4とを備え、絶
縁回路基板1を底面としケース5で側壁を形成し、この
中に液状樹脂7を注入・硬化して封止して成る。なお、
図中、2は銅箔パターン、3はハンダ、6は入出力端子
である。
As shown in FIG. 1, a semiconductor device equipped with an integrated circuit generally has a metal-based insulating circuit board 1 inside a case 5.
and an electronic component 4 including a semiconductor element necessary for configuring an integrated circuit mounted on the insulated circuit board 1, with the insulated circuit board 1 as a bottom surface and a case 5 forming a side wall. It is formed by injecting and hardening liquid resin 7 and sealing it. In addition,
In the figure, 2 is a copper foil pattern, 3 is solder, and 6 is an input/output terminal.

【0013】ここで、上記半導体装置の製造方法につい
て詳述する。
[0013] The method for manufacturing the above semiconductor device will now be described in detail.

【0014】金属ベース絶縁回路基板1を金型M内には
め込み、いわゆるインサート成型によりケース5を形成
する(図1(A)参照)。
The metal base insulating circuit board 1 is fitted into a mold M, and a case 5 is formed by so-called insert molding (see FIG. 1(A)).

【0015】これにより、絶縁回路基板1を底面としこ
れを囲むよう、ケース5が絶縁回路基板1と一体化され
て接合されるので、上面に開口を有する樹脂封止用の容
器(凹部)ができあがる(図1(B)参照)。なお、ケ
ース5の材質は、後工程のハンダ付け時の加熱に耐える
ために熱変形温度が230℃以上の熱可塑性樹脂がよい
[0015] As a result, the case 5 is integrally joined to the insulated circuit board 1 so as to surround the insulated circuit board 1 as a bottom surface, so that a container (concavity) for resin sealing having an opening on the top surface is formed. It is completed (see Figure 1(B)). Note that the material of the case 5 is preferably a thermoplastic resin having a heat deformation temperature of 230° C. or higher in order to withstand heat during soldering in a subsequent process.

【0016】つぎに、底面である絶縁回路基板1上の部
品搭載領域の銅箔パターン2上にハンダクリーム3を供
給する(図1(C)参照)。このハンダクリーム3は融
点183℃のSn/Pb共晶ハンダで良い。
Next, solder cream 3 is supplied onto the copper foil pattern 2 in the component mounting area on the bottom surface of the insulated circuit board 1 (see FIG. 1(C)). This solder cream 3 may be Sn/Pb eutectic solder having a melting point of 183°C.

【0017】そして、このハンダクリーム3上に所定の
部品、すなわち集積回路を構成するのに必要な半導体素
子を含む電子部品4、および入出力端子5を載置する(
図1(D)参照)。この状態で加熱し、ハンダを溶融さ
せてハンダ付けする(図1(E)参照)。
Then, predetermined parts, that is, electronic parts 4 including semiconductor elements necessary for constructing an integrated circuit, and input/output terminals 5 are placed on the solder cream 3 (
(See Figure 1(D)). In this state, it is heated to melt the solder and solder (see FIG. 1(E)).

【0018】その後、ハンダ付け部の不純物残渣を除去
し(図1(F)参照)、図1(B)で形成された容器の
上面の開口から液状封止樹脂7を注入し加熱・硬化させ
て集積回路搭載の半導体装置が組み上がる(図1(G)
参照)。
After that, impurity residues on the soldered part are removed (see FIG. 1(F)), and liquid sealing resin 7 is injected from the opening on the top surface of the container formed in FIG. 1(B) and heated and cured. A semiconductor device equipped with an integrated circuit is assembled (Figure 1 (G)).
reference).

【0019】このように、ケース5をつくる際、金属ベ
ース絶縁回路基板1が底面となるよう絶縁回路基板1を
金型Mにインサートして射出成型し、ケース5と絶縁回
路基板1とを一体的に接合することによつて、ケース5
と同時に、注入樹脂の容器をつくることができるから、
従来のような絶縁回路基板1とケース5との接着工程を
不要とし、半導体装置の製造工程を簡略化できる。した
がつて、製造時間を短縮でき、しかも製造コストも安く
つく。
In this way, when making the case 5, the insulated circuit board 1 is inserted into the mold M and injection molded so that the metal base insulated circuit board 1 faces the bottom surface, and the case 5 and the insulated circuit board 1 are integrated. Case 5
At the same time, you can make containers for injected resin.
The conventional process of bonding the insulated circuit board 1 and the case 5 is not necessary, and the manufacturing process of the semiconductor device can be simplified. Therefore, manufacturing time can be shortened and manufacturing costs can also be reduced.

【0020】なお、本発明は、上記実施例に限定される
ものではなく、本発明の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。
It should be noted that the present invention is not limited to the above embodiments, and it goes without saying that many modifications and changes can be made to the above embodiments within the scope of the present invention.

【0021】[0021]

【発明の効果】以上の説明から明らかなように、本発明
によると、ケースをつくる際に、回路基板を金型にセツ
トし、ケースを射出成型してケースと絶縁回路基板とを
一体的に接合することで、ケースと同時に、封止樹脂注
入用の凹部をつくることができるため、絶縁回路基板と
ケースとの接着工程を簡略化する。このため、製造時間
が短縮し、しかも製造コストが安くつくといつた優れた
効果がある。
[Effects of the Invention] As is clear from the above description, according to the present invention, when manufacturing a case, the circuit board is set in a mold, the case is injection molded, and the case and the insulated circuit board are integrally assembled. By joining, a recess for injecting the sealing resin can be created at the same time as the case, which simplifies the bonding process between the insulated circuit board and the case. This has the advantage of shortening the manufacturing time and reducing the manufacturing cost.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】図1は本発明の一実施例に係る半導体装置の製
造方法においてその製造工程を示す概略図である。
FIG. 1 is a schematic diagram showing a manufacturing process in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

【図2】図2は従来の半導体装置の製造方法についてそ
の製造工程を示す概略図である。
FIG. 2 is a schematic diagram showing the manufacturing process of a conventional semiconductor device manufacturing method.

【符号の説明】[Explanation of symbols]

1    回路基板 4    電子部品 5    ケース 7    封止樹脂 M    金型 1 Circuit board 4 Electronic parts 5 Case 7 Sealing resin M Mold

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  回路基板の周囲を囲む枠状のケースの
形成用の金型の内部に、回路基板が底面となるようセツ
トして、前記金型内に樹脂を射出することによりケース
を形成してケースと回路基板とを一体的に接合し、前記
回路基板上に、集積回路を構成するのに必要な半導体素
子を含む電子部品を搭載し、その後、ケースと回路基板
とで形成された凹部に封止樹脂を注入して封止すること
を特徴とする半導体装置の製造方法。
1. A case is formed by placing a circuit board with the bottom surface inside a mold for forming a frame-shaped case surrounding a circuit board, and injecting resin into the mold. The case and the circuit board are integrally joined together, electronic components including semiconductor elements necessary to configure an integrated circuit are mounted on the circuit board, and then the case and the circuit board are formed. A method of manufacturing a semiconductor device, the method comprising injecting a sealing resin into a recess for sealing.
JP3096757A 1991-04-26 1991-04-26 Manufacture of semiconductor device Pending JPH04326753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3096757A JPH04326753A (en) 1991-04-26 1991-04-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3096757A JPH04326753A (en) 1991-04-26 1991-04-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH04326753A true JPH04326753A (en) 1992-11-16

Family

ID=14173530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3096757A Pending JPH04326753A (en) 1991-04-26 1991-04-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH04326753A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998052221A1 (en) * 1997-05-09 1998-11-19 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Power semiconductor module with ceramic substrate
EP0959494A4 (en) * 1996-08-20 2001-02-07 Hitachi Ltd Semiconductor and method for manufacturing the same
JP2003125295A (en) * 2001-10-15 2003-04-25 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0959494A4 (en) * 1996-08-20 2001-02-07 Hitachi Ltd Semiconductor and method for manufacturing the same
WO1998052221A1 (en) * 1997-05-09 1998-11-19 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Power semiconductor module with ceramic substrate
JP2003125295A (en) * 2001-10-15 2003-04-25 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method

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