JPH04323860A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH04323860A JPH04323860A JP3092511A JP9251191A JPH04323860A JP H04323860 A JPH04323860 A JP H04323860A JP 3092511 A JP3092511 A JP 3092511A JP 9251191 A JP9251191 A JP 9251191A JP H04323860 A JPH04323860 A JP H04323860A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- ground
- layer
- semiconductor integrated
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims abstract description 12
- 230000002238 attenuated effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、半導体集積回路に関し
、特に電源配線および接地配線に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor integrated circuits, and more particularly to power supply wiring and ground wiring.
【0002】0002
【従来の技術】従来の半導体集積回路のマスクパターン
は、トランジスタなどの論理素子が集合し1つの機能を
構成する領域(以後これをユニットと呼ぶ)と、これら
の素子の存在しない配線領域から成り立っており、図2
に示すように、電源配線7,接地配線9は、それぞれ電
源パッド7p,接地パッド9pより引き出され、配線領
域を通ってユニットA〜Eに供給されている。[Prior Art] A mask pattern for a conventional semiconductor integrated circuit consists of an area where logic elements such as transistors are assembled to form one function (hereinafter referred to as a unit), and a wiring area where these elements do not exist. Figure 2
As shown in the figure, the power supply wiring 7 and the ground wiring 9 are drawn out from the power supply pad 7p and the ground pad 9p, respectively, and are supplied to the units A to E through the wiring area.
【0003】これらの電源配線7,接地配線9は、電流
の変化に耐えられるように極めて抵抗の低い金属配線に
よって引き廻されている。このため、電源配線や接地配
線にノイズが乗ってしまうと、ノイズはほとんど吸収さ
れることなく各ユニットに伝達されてしまう。These power supply wiring 7 and ground wiring 9 are routed by metal wiring with extremely low resistance so as to withstand changes in current. Therefore, if noise gets onto the power supply wiring or ground wiring, the noise will be transmitted to each unit without being absorbed.
【0004】0004
【発明が解決しようとする課題】上述した従来の半導体
集積回路においては、電源配線や接地配線にノイズを吸
収する手段が設けられていないため、これらの配線にノ
イズが乗るとそのままユニットに伝達され、誤動作を起
こす原因となっていた。[Problems to be Solved by the Invention] In the above-mentioned conventional semiconductor integrated circuit, no means for absorbing noise is provided in the power supply wiring or ground wiring, so if noise is picked up on these wiring, it is directly transmitted to the unit. , which caused malfunctions.
【0005】[0005]
【課題を解決するための手段】本発明の半導体集積回路
は、半導体チップの配線領域に、一方の電極が接地配線
に接続され、他方の電極が電源配線に接続されたコンデ
ンサーを設けたというものである。[Means for Solving the Problems] The semiconductor integrated circuit of the present invention is such that a capacitor is provided in the wiring area of a semiconductor chip, with one electrode connected to a ground wiring and the other electrode connected to a power wiring. It is.
【0006】[0006]
【実施例】図1(a)は本発明の一実施例を示す半導体
チップの平面図、図1(b)は図1(a)のX−X線断
面図である。Embodiment FIG. 1(a) is a plan view of a semiconductor chip showing an embodiment of the present invention, and FIG. 1(b) is a sectional view taken along the line X--X in FIG. 1(a).
【0007】ユニットAとユニットBの間の配線領域は
、電源配線7,接地配線9,信号配線11−1〜11−
4によってその面積が決定される。この配線領域で、ポ
リシリコン膜などの下層配線層6とN型拡散層2は、ゲ
ート酸化膜5を誘電体としてコンデンサーを形成してい
る。このコンデンサーの一方の電極であるN型拡散層2
はN+ 型拡散層3とコンタクトホール10により接地
配線9に接続され、他方の電極である下層配線層6はコ
ンタクトホール8により、電源配線7に接続されている
。The wiring area between unit A and unit B includes a power supply wiring 7, a ground wiring 9, and signal wiring 11-1 to 11-.
4 determines its area. In this wiring region, a lower wiring layer 6 such as a polysilicon film and an N-type diffusion layer 2 form a capacitor using the gate oxide film 5 as a dielectric. N type diffusion layer 2 which is one electrode of this capacitor
is connected to a ground wiring 9 through an N+ type diffusion layer 3 and a contact hole 10, and the lower wiring layer 6, which is the other electrode, is connected to a power supply wiring 7 through a contact hole 8.
【0008】このコンデンサーによって、電源配線に乗
ったノイズを接地点に吸収させることが出来、又接地配
線に乗ったノイズを電源に吸収させることが出来、ノイ
ズを減衰させることが出来る。この様なコンデンサーは
、チップ上の配線領域で電源配線と接地配線が存在する
所には、チップの面積を変えることなくどこにでも作成
出来る。[0008] With this capacitor, noise carried on the power supply wiring can be absorbed by the ground point, noise carried on the ground wiring can be absorbed by the power supply, and the noise can be attenuated. Such capacitors can be created anywhere on the chip where power supply wiring and ground wiring are present without changing the area of the chip.
【0009】この実施例はCMOS ICに本発明を
適用したものである。In this embodiment, the present invention is applied to a CMOS IC.
【0010】0010
【発明の効果】以上説明したように、本発明は、配線領
域に、電源配線と接地配線に接続するコンデンサーを設
けることにより、電源配線や接地配線に乗るノイズを吸
収し、半導体集積回路の誤動作を防ぐことが出来る。As explained above, the present invention provides a capacitor connected to the power supply wiring and the ground wiring in the wiring area, thereby absorbing noise on the power supply wiring and the ground wiring, thereby preventing malfunctions of semiconductor integrated circuits. can be prevented.
【0011】また、コンデンサーに充電された電荷によ
り、電源配線や接地配線の電位の変動をおさえることが
出来、より安定な電源電位,接地電位を供給することが
出来る。そのうえ、この様なコンデンサーを作成しても
、チップ面積を増大させることもない。[0011]Furthermore, the charges stored in the capacitor can suppress fluctuations in the potential of the power supply wiring and the ground wiring, making it possible to supply more stable power supply potential and ground potential. Moreover, creating such a capacitor does not increase the chip area.
【図1】本発明の一実施例を示す半導体チップの平面図
(図1(a))および断面図(図1(b))である。FIG. 1 is a plan view (FIG. 1(a)) and a cross-sectional view (FIG. 1(b)) of a semiconductor chip showing one embodiment of the present invention.
【図2】半導体集積回路における配線のレイアウト例を
示す平面図である。FIG. 2 is a plan view showing an example of wiring layout in a semiconductor integrated circuit.
1 P型シリコン基板 2 N型拡散層 3 N+ 型拡散層 4 フィールド酸化膜 5 層間絶縁膜 6 下層配線層 7 電源配線 7p 電源パッド 8 コンタクトホール 9 接地配線 9p 接地パッド 10 コンタクトホール 11−1〜11−4 信号配線 A〜E ユニット 1 P-type silicon substrate 2 N-type diffusion layer 3 N+ type diffusion layer 4 Field oxide film 5 Interlayer insulation film 6 Lower wiring layer 7 Power wiring 7p Power pad 8 Contact hole 9 Ground wiring 9p Ground pad 10 Contact hole 11-1 to 11-4 Signal wiring A~E Unit
Claims (1)
極が接地配線に接続され、他方の電極が電源配線に接続
されたコンデンサーを設けたことを特徴とする半導体集
積回路。1. A semiconductor integrated circuit characterized in that a capacitor having one electrode connected to a ground wiring and the other electrode connected to a power supply wiring is provided in a wiring area of a semiconductor chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3092511A JPH04323860A (en) | 1991-04-24 | 1991-04-24 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3092511A JPH04323860A (en) | 1991-04-24 | 1991-04-24 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04323860A true JPH04323860A (en) | 1992-11-13 |
Family
ID=14056344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3092511A Pending JPH04323860A (en) | 1991-04-24 | 1991-04-24 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04323860A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6690913B2 (en) | 2001-12-20 | 2004-02-10 | Kabushiki Kaisha Toshiba | Correction support apparatus, correction support method, correction support program, and correction support system |
JP2006066823A (en) * | 2004-08-30 | 2006-03-09 | Fujitsu Ltd | Semiconductor device |
-
1991
- 1991-04-24 JP JP3092511A patent/JPH04323860A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6690913B2 (en) | 2001-12-20 | 2004-02-10 | Kabushiki Kaisha Toshiba | Correction support apparatus, correction support method, correction support program, and correction support system |
JP2006066823A (en) * | 2004-08-30 | 2006-03-09 | Fujitsu Ltd | Semiconductor device |
JP4587746B2 (en) * | 2004-08-30 | 2010-11-24 | 富士通セミコンダクター株式会社 | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7763941B2 (en) | Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp | |
US4672584A (en) | CMOS integrated circuit | |
JPH1084083A (en) | Semiconductor device having static electricity protection circuit | |
JP4295370B2 (en) | Semiconductor element | |
JPH1065146A (en) | Semiconductor integrated circuit device | |
JPH04323860A (en) | Semiconductor integrated circuit | |
JP2001028423A (en) | Semiconductor integrated circuit device | |
EP0708486B1 (en) | Semiconductor field effect transistor with large substrate contact region | |
JPS59144171A (en) | Semiconductor integrated circuit device | |
JPH03248554A (en) | Cmos semiconductor integrated circuit device | |
JP2508968B2 (en) | Semiconductor device | |
US20020008303A1 (en) | Semiconductor device | |
JP3211871B2 (en) | I / O protection circuit | |
JP3010911B2 (en) | Semiconductor device | |
KR20030093115A (en) | Semiconductor integrated circuit device | |
JP2533855B2 (en) | Semiconductor integrated circuit device | |
JP3038896B2 (en) | Semiconductor device | |
JPH05175519A (en) | Semiconductor device | |
JP3134443B2 (en) | Semiconductor input protection device | |
KR100291540B1 (en) | Input / output protection circuit | |
JPH0532908B2 (en) | ||
JPS63143843A (en) | Power source wiring device for semiconductor integrated circuit | |
JP2834186B2 (en) | Semiconductor device | |
JPS59154056A (en) | Semiconductor device | |
JPS62211945A (en) | Semiconductor device |