JPH04323849A - Vacuum chuck for wafer - Google Patents
Vacuum chuck for waferInfo
- Publication number
- JPH04323849A JPH04323849A JP3119207A JP11920791A JPH04323849A JP H04323849 A JPH04323849 A JP H04323849A JP 3119207 A JP3119207 A JP 3119207A JP 11920791 A JP11920791 A JP 11920791A JP H04323849 A JPH04323849 A JP H04323849A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- vacuum chuck
- support
- area
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 claims description 44
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000001125 extrusion Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、シリコンをはじめ、ア
ルミナ、石英その他のウェーハの測定、運搬、加工等に
用いるウェーハ用真空チャックに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum chuck for wafers used for measuring, transporting, processing, etc. wafers of silicon, alumina, quartz, and other materials.
【0002】0002
【従来の技術】従来、この種のウェーハ用真空チャック
としては、図5,図6に示すものが知られている。2. Description of the Related Art Conventionally, as this type of vacuum chuck for wafers, those shown in FIGS. 5 and 6 are known.
【0003】前者のウェーハ用真空チャックは、ウェー
ハが載置される周壁11で囲まれた凹部12の底部に、
周壁11と同じ高さでウェーハを支持する中央部の円板
状の支持突起13及びこれと同心状をなすリング状の支
持突起14を設け、かつ凹部12内の空気を排気する排
気口(図示せず)を設けており、又、後者のウェーハ用
真空チャックは、ウェーハが載置される周壁21で囲ま
れた凹部22の底部に、周壁21と同じ高さでウェーハ
を支持する円板状の多数の支持突起23を、隣り合う4
個が正方形をなす格子状に配設し、かつ凹部22内の空
気を排気する排気口24を設けている。The former vacuum chuck for wafers has a recess 12 at the bottom surrounded by a peripheral wall 11 on which the wafer is placed.
A central disc-shaped support protrusion 13 that supports the wafer at the same height as the peripheral wall 11 and a ring-shaped support protrusion 14 that is concentric with the central disc-shaped support protrusion 13 are provided, and an exhaust port (Fig. (not shown), and the latter vacuum chuck for wafers is equipped with a disk-shaped vacuum chuck that supports the wafer at the same height as the peripheral wall 21 at the bottom of the recess 22 surrounded by the peripheral wall 21 on which the wafer is placed. A large number of support protrusions 23 are connected to adjacent 4
The recesses 22 are arranged in a lattice pattern, and are provided with exhaust ports 24 for exhausting the air inside the recesses 22.
【0004】0004
【発明が解決しようとする課題】ここで、ウェーハ用真
空チャックは、次の条件を満たすことが望ましいとされ
ている。[Problems to be Solved by the Invention] Here, it is considered desirable that a vacuum chuck for wafers satisfy the following conditions.
【0005】1)ウェーハの平坦度を保ったまま、ある
いはウェーハのひずみ量を最小としてチャッキングでき
る。1) The wafer can be chucked while maintaining its flatness or with the amount of wafer strain being minimized.
【0006】2)チャック材によるウェーハ汚染を抑え
るため、ウェーハとの接触面積が少ないこと。2) The contact area with the wafer should be small in order to suppress wafer contamination by the chuck material.
【0007】しかしながら、前述した従来のウェーハ用
真空チャックはいずれも、上記1),2)の条件を同時
に満たす最適なものとはいえない。However, none of the conventional vacuum chucks for wafers described above can be said to be optimal for satisfying the above conditions 1) and 2) at the same time.
【0008】そこで、本発明は、チャッキング時のウェ
ーハのひずみ量を一定とした場合、ウェーハとの接触面
積を最小とし得るウェーハ用真空チャックの提供を目的
とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a vacuum chuck for a wafer that can minimize the area of contact with the wafer when the amount of strain on the wafer during chucking is kept constant.
【0009】[0009]
【課題を解決するための手段】前記課題を解決するため
、本発明のウェーハ用真空チャックは、ウェーハが載置
される周壁で囲まれた凹部の底部に、周壁と同じ高さで
ウェーハを支持する多数の支持突起及び凹部内の空気を
排気する排気口を設けたウェーハ用真空チャックにおい
て、前記多数の支持突起の配列を、隣り合う3個が正三
角形をなす千鳥状としたものである。[Means for Solving the Problems] In order to solve the above problems, the vacuum chuck for wafers of the present invention supports a wafer at the same height as the peripheral wall at the bottom of a recess surrounded by a peripheral wall on which the wafer is placed. In the vacuum chuck for wafers, the plurality of support protrusions are provided with a large number of support protrusions and an exhaust port for discharging the air in the recessed part.
【0010】0010
【作用】上記手段においては、チャッキング時のウェー
ハのひずみを一定とした場合、1個の支持突起の支持領
域が最大となる。[Operation] In the above means, when the strain of the wafer during chucking is kept constant, the support area of one support protrusion is maximized.
【0011】[0011]
【実施例】以下、本発明の実施例を図面を参照して説明
する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【0012】図1は本発明の一実施例のウェーハ用真空
チャックの平面図である。FIG. 1 is a plan view of a wafer vacuum chuck according to an embodiment of the present invention.
【0013】図中1は円板状のチャック本体2の上面の
周辺部に立設した周壁で、ウェーハ(図示せず)が載置
されるものである。周壁1によって囲まれた凹部3の底
部には、周壁1と同じ高さでウェーハを支持する円板状
若しくは円柱状の多数の支持突起4が、その隣り合う3
個によって正三角形をなす千鳥状に配列されている。
又、凹部3の底部には、ウェーハの載置によって閉塞さ
れる凹部3内の空気を排気する排気口5が設けられてい
る。In the figure, reference numeral 1 denotes a peripheral wall erected around the upper surface of a disc-shaped chuck body 2, on which a wafer (not shown) is placed. At the bottom of the recess 3 surrounded by the peripheral wall 1, there are a number of disc-shaped or cylindrical support protrusions 4 that support the wafer at the same height as the peripheral wall 1.
They are arranged in a staggered pattern forming an equilateral triangle. Furthermore, an exhaust port 5 is provided at the bottom of the recess 3 to exhaust air from the recess 3 that is closed when the wafer is placed.
【0014】しかして、上記構成のウェーハ用真空チャ
ックを用い、ウェーハをチャッキングした場合、ウェー
ハには等分布荷重が加わり、模式的に示す図2の真空チ
ャックのように、周壁6及び支持突起7に載置されたウ
ェーハWは、排気口8による凹部9内の空気の排気によ
り、支持突起7間の間隔を2aとすると、明らかに支持
突起7間の中間C(支持突起から最も離れたところ)が
大きくひずみ、最大のひずみ量τとなる。When a wafer is chucked using the vacuum chuck for wafers having the above configuration, a uniformly distributed load is applied to the wafer, and as shown in the vacuum chuck shown in FIG. By exhausting the air in the recess 9 through the exhaust port 8, the wafer W placed on the support projection 7 is clearly moved to the middle C between the support projections 7 (the one farthest from the support projection), assuming that the distance between the support projections 7 is 2a. ) is greatly distorted, resulting in the maximum amount of distortion τ.
【0015】次に、本発明と図6の従来の真空チャック
による支持突起4,231個が支持するウェーハの面積
について考える。Next, the area of the wafer supported by the 4,231 support protrusions of the present invention and the conventional vacuum chuck shown in FIG. 6 will be considered.
【0016】ここで、両真空チャックによるチャッキン
グ時のウェーハのひずみ量を等しくするため、両者の支
持突起から最も離れたところ(ひずみ量の最大位置)か
ら支持突起の中心までの距離aを等しくし、かつ支持突
起の面積を等しくする。[0016] In order to equalize the amount of strain on the wafer when chucked by both vacuum chucks, the distance a from the farthest point from the support protrusion (position of maximum strain) to the center of the support protrusion is made equal. and the areas of the support protrusions are made equal.
【0017】まず、本発明の真空チャックにおいては、
図3に示すように、1個の支持突起4につき1個の正六
角形の支持領域ET が割り当てられ、その面積ST
は、次式で表わされる。First, in the vacuum chuck of the present invention,
As shown in FIG. 3, one regular hexagonal support area ET is allocated to each support protrusion 4, and its area ST
is expressed by the following formula.
【0018】[0018]
【数1】
一方、図6の従来の真空チャックにおいては、図4に示
すように、1個の支持突起23につき1個の正方形の支
持領域ES が割り当てられ、その面積SS は、次式
で表わされる。[Equation 1] On the other hand, in the conventional vacuum chuck shown in FIG. 6, as shown in FIG. 4, one square support area ES is allocated to each support protrusion 23, and the area SS is calculated by the following equation. expressed.
【0019】SS =2a2
したがって、ST >SS より本発明の真空チャック
の方が、1個の支持突起当りの支持領域を広いものとし
得ることがわかる。よって、同じチャッキング面積を持
ち、かつ同程度の平坦度が得られる(ウェーハのひずみ
が等しい場合)真空チャックであれば、支持突起数を従
来のものの77%(2/2.598)に減らすことが可
能となり、その分ウェーハと接触する支持突起の総接触
面積が減少する。SS = 2a2 Therefore, it can be seen from ST > SS that the vacuum chuck of the present invention can provide a wider support area per support protrusion. Therefore, if a vacuum chuck has the same chucking area and can obtain the same level of flatness (if the wafer strain is the same), the number of support protrusions will be reduced to 77% (2/2.598) of the conventional one. This makes it possible to reduce the total contact area of the support projections that come into contact with the wafer.
【0020】なお、有限要素法を用いたコンピュータシ
ミュレーションにより、ウェーハのひずみ量を計算した
結果、支持突起数が同じ場合、本発明の真空チャックの
方が有利であることがわかった。As a result of calculating the amount of strain on the wafer by computer simulation using the finite element method, it was found that the vacuum chuck of the present invention is more advantageous when the number of support protrusions is the same.
【0021】又、上述した実施例においては、支持突起
を円板状若しくは円柱状とする場合について説明したが
、これに限定されるものではなく、角板状、角柱状その
他の形状であってもよい。[0021] Furthermore, in the above-mentioned embodiments, the case where the support protrusion is in the shape of a disc or a cylinder has been explained, but the support protrusion is not limited thereto, and may be in the shape of a square plate, a prism, or other shapes. Good too.
【0022】[0022]
【発明の効果】以上のように本発明によれば、チャッキ
ング時のウェーハのひずみを一定とした場合、1個の支
持突起の支持領域が最大となるので、従来のものに比し
てウェーハとの接触面積を最小にできる。As described above, according to the present invention, when the strain of the wafer during chucking is kept constant, the support area of one support protrusion is maximized, so that the wafer can be Minimize the contact area with the
【図1】本発明の一実施例のウェーハ用真空チャックの
平面図である。FIG. 1 is a plan view of a wafer vacuum chuck according to an embodiment of the present invention.
【図2】真空チャックにチャッキングされたウェーハの
状態を示す断面の模式図である。FIG. 2 is a schematic cross-sectional view showing the state of a wafer chucked in a vacuum chuck.
【図3】本発明に係る真空チャックの1個の支持突起に
よる支持領域の説明図である。FIG. 3 is an explanatory diagram of a support area by one support protrusion of the vacuum chuck according to the present invention.
【図4】従来の真空チャックの1個の支持突起による支
持領域の説明図である。FIG. 4 is an explanatory diagram of a support area by one support protrusion of a conventional vacuum chuck.
【図5】従来の真空チャックの斜視図である。FIG. 5 is a perspective view of a conventional vacuum chuck.
【図6】従来の他の真空チャックの斜視図である。FIG. 6 is a perspective view of another conventional vacuum chuck.
1 周壁 3 凹部 4 支持突起 5 排気口 1 Peripheral wall 3 Recessed part 4 Support protrusion 5 Exhaust port
Claims (1)
凹部の底部に、周壁と同じ高さでウェーハを支持する多
数の支持突起及び凹部内の空気を排気する排気口を設け
たウェーハ用真空チャックにおいて、前記多数の支持突
起の配列を、隣り合う3個が正三角形をなす千鳥状とし
たことを特徴とするウェーハ用真空チャック。Claim 1: A device for wafers, in which a number of support protrusions for supporting the wafer at the same height as the surrounding wall and an exhaust port for exhausting air in the recess are provided at the bottom of the recess surrounded by a peripheral wall on which the wafer is placed. A vacuum chuck for a wafer, characterized in that the plurality of support protrusions are arranged in a staggered manner, with three adjacent support protrusions forming an equilateral triangle.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3119207A JPH04323849A (en) | 1991-04-23 | 1991-04-23 | Vacuum chuck for wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3119207A JPH04323849A (en) | 1991-04-23 | 1991-04-23 | Vacuum chuck for wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04323849A true JPH04323849A (en) | 1992-11-13 |
Family
ID=14755587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3119207A Pending JPH04323849A (en) | 1991-04-23 | 1991-04-23 | Vacuum chuck for wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04323849A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004343106A (en) * | 2003-05-06 | 2004-12-02 | Asml Netherlands Bv | Lithography apparatus, device manufacturing method, and device manufactured by the same |
JP2006054379A (en) * | 2004-08-13 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | Suction tool and polishing apparatus |
JP2012009720A (en) * | 2010-06-28 | 2012-01-12 | Nikon Corp | Wafer holder and exposure equipment |
WO2021138974A1 (en) * | 2020-01-09 | 2021-07-15 | 诚瑞光学(常州)股份有限公司 | Glass wafer suction device |
-
1991
- 1991-04-23 JP JP3119207A patent/JPH04323849A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004343106A (en) * | 2003-05-06 | 2004-12-02 | Asml Netherlands Bv | Lithography apparatus, device manufacturing method, and device manufactured by the same |
JP2006054379A (en) * | 2004-08-13 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | Suction tool and polishing apparatus |
JP2012009720A (en) * | 2010-06-28 | 2012-01-12 | Nikon Corp | Wafer holder and exposure equipment |
WO2021138974A1 (en) * | 2020-01-09 | 2021-07-15 | 诚瑞光学(常州)股份有限公司 | Glass wafer suction device |
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