JPH03228348A - Vacuum chuck for semiconductor wafer - Google Patents

Vacuum chuck for semiconductor wafer

Info

Publication number
JPH03228348A
JPH03228348A JP2023986A JP2398690A JPH03228348A JP H03228348 A JPH03228348 A JP H03228348A JP 2023986 A JP2023986 A JP 2023986A JP 2398690 A JP2398690 A JP 2398690A JP H03228348 A JPH03228348 A JP H03228348A
Authority
JP
Japan
Prior art keywords
suction
grooves
dust
semiconductor wafer
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023986A
Other languages
Japanese (ja)
Other versions
JP2873598B2 (en
Inventor
Fumihiro Takemura
文宏 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP2023986A priority Critical patent/JP2873598B2/en
Publication of JPH03228348A publication Critical patent/JPH03228348A/en
Application granted granted Critical
Publication of JP2873598B2 publication Critical patent/JP2873598B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To avoid deformation of a semiconductor wafer while removing the effect of dust when chucking by establishing a plurality of circular dust grooves which have the same width as that of a suction groove concentrically between adjacent circular suction grooves on a suction face. CONSTITUTION:A vacuum semiconductor wafer chuck has a surface 2 where concentric circular suction grooves 3 are provided with suction holes 5 in their bottoms. A plurality of concentric circular dust grooves 7 which have the same width of that of the suction groove 3 are provided at the surface 2 between the adjacent suction grooves 3. Take the following for example. Tow concentric circular suction grooves 3 are provided, respectively, in central and peripheral portions of the surface 2 of a disklike metal or ceramic chuck body 1. The individual suction grooves 3 have suction holes 5 at regular intervals in their bottoms, and all the holes communicate in a chamber 4 established inside the chuck body 1. Between the suction grooves 3, concentric circular dust grooves 7 which have the same width and depth as those of the suction groove 3 are made at an appropriate interval.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、シリコンウェハ等の半導体ウニへの平坦度測
定、ラッピング又は研削加工等のため、半導体ウェハを
真空吸着する半導体ウェハ用真空チャックに関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a vacuum chuck for semiconductor wafers that vacuum-chucks semiconductor wafers for flatness measurement, lapping, or grinding of semiconductor wafers such as silicon wafers. .

[従来の技術] 従来、この種の半導体ウェハ用真空チャックは、被吸着
物である半導体ウェハの吸着面との間に介在するダスト
による密着不良等を防止するため、例えば第4図に示す
ように、底部に吸引孔11を開設した複数の吸着溝12
を、チャック本体13の吸着面14に同心状に設け、か
つこれらの吸着溝12の周辺を残して吸着面14に同心
状の凹部15を設けて構成したり(実開昭60−192
445号公報参照)、又は第5図に示すように、上記構
成のものにおいて、凹部15の底部に人気と連通するリ
ーク孔16を設けて構成されている(実開昭62−23
447号公報参照)。
[Prior Art] Conventionally, this type of vacuum chuck for semiconductor wafers has a vacuum chuck as shown in FIG. , a plurality of suction grooves 12 with suction holes 11 at the bottom.
are provided concentrically on the suction surface 14 of the chuck body 13, and concentric recesses 15 are provided on the suction surface 14, leaving the periphery of these suction grooves 12 (see Utility Model No. 60-192).
445), or as shown in FIG. 5, in the above structure, a leak hole 16 communicating with the bottom of the recess 15 is provided (see Utility Model Publication No. 62-23).
(See Publication No. 447).

[発明が解決しようとする課題] しかしながら、上記従来の各半導体ウェハ用真空チャッ
クにおいては、凹部15が設けられているので、ダスト
の影響を排除し得るものの、第4図に示すものの場合は
、凹部15内も吸着溝12を介して真空吸引されるため
、同図に示すように、半導体ウェハWが凹部15内に突
出するように湾曲して変形する問題があり、又、第5図
に示すものの場合は、凹部15内が大気と連通して吸着
溝12内より圧力が大きくなるため、同図に示すように
、半導体ウェハWの凹部15の対応する部分が外方へ突
出するように湾曲して変形する問題かある。
[Problems to be Solved by the Invention] However, although each of the conventional vacuum chucks for semiconductor wafers described above is provided with the recessed portion 15, the influence of dust can be eliminated; however, in the case of the one shown in FIG. Since the inside of the recess 15 is also vacuum-suctioned through the suction groove 12, there is a problem that the semiconductor wafer W is curved and deformed so as to protrude into the recess 15, as shown in FIG. In the case shown, the inside of the recess 15 communicates with the atmosphere and the pressure becomes higher than that inside the suction groove 12, so the corresponding part of the recess 15 of the semiconductor wafer W protrudes outward as shown in the figure. There is a problem with it bending and deforming.

そこで、本発明は、ダストの影響を排除しつつ、半導体
ウェハの変形を防止してチャッキングし得る半導体ウェ
ハ用真空チャックの提供を目的とする。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a vacuum chuck for semiconductor wafers that can chuck semiconductor wafers while eliminating the influence of dust and preventing deformation of semiconductor wafers.

[課題を解決するための手段] 前記課題を解決するため、本発明の半導体ウェハ用真空
チャックは、底部に吸引孔を開設した複数の吸着溝を吸
着面に同心状に設けてなる半導体ウェハ用真空チャック
において、前記隣り合う吸着溝間の吸着面に、この吸着
溝と同し溝幅の複数のダスト溝を同心状に設けたもので
ある。
[Means for Solving the Problems] In order to solve the above-mentioned problems, the vacuum chuck for semiconductor wafers of the present invention has a vacuum chuck for semiconductor wafers which has a suction surface provided with a plurality of suction grooves concentrically provided with suction holes at the bottom. In the vacuum chuck, a plurality of dust grooves having the same groove width as the suction grooves are concentrically provided on the suction surface between the adjacent suction grooves.

[作用] 上記手段においては、吸着面と半導体ウェハとの間に介
在するダストが、真空吸引の際の吸着溝に向う移動に伴
ってダスト溝に捕捉されると共に、半導体ウェハが、隣
り合うダスト溝間又はダスト溝と吸引溝との間の吸着面
によって支持される。
[Operation] In the above means, the dust interposed between the suction surface and the semiconductor wafer is captured in the dust groove as it moves toward the suction groove during vacuum suction, and the semiconductor wafer is also It is supported by a suction surface between the grooves or between the dust groove and the suction groove.

ダスト溝の溝幅が、吸着溝の溝幅より小さくなるとダス
トの捕捉効率が低下し、吸着溝の溝幅より大きくなると
半導体ウェハの変形を生ずる。
When the width of the dust groove is smaller than the width of the suction groove, the dust trapping efficiency decreases, and when it becomes larger than the width of the suction groove, the semiconductor wafer is deformed.

[実施例コ 以下、本発明の一実施例を図面と共に説明する。[Example code] An embodiment of the present invention will be described below with reference to the drawings.

第1図、第2図は本発明に係る半導体ウェハ用真空チャ
ックの平面図、断面図である。
1 and 2 are a plan view and a sectional view of a vacuum chuck for semiconductor wafers according to the present invention.

図中1は金属又はセラミックス等からなる円板状のチャ
ック本体で、その吸着面2には、2条の吸着溝3が中心
部及び外周部に位置して同心円状に設けられている。各
吸着溝3の底部には、チャック本体1の内部に設けた連
通室4を介して互いに連通された複数の吸引孔5が、周
方向へ等間隔て離隔して開設されており、連通室4は、
チャック本体1の裏面に設けた真空吸引口6を介して図
示しない真空ポンプと接続自在に設けられている。
In the figure, reference numeral 1 denotes a disc-shaped chuck body made of metal, ceramics, etc., and its suction surface 2 has two concentric suction grooves 3 located at the center and outer circumference. At the bottom of each suction groove 3, a plurality of suction holes 5 are opened at equal intervals in the circumferential direction and communicated with each other via a communication chamber 4 provided inside the chuck body 1. 4 is
It is provided so as to be connectable to a vacuum pump (not shown) via a vacuum suction port 6 provided on the back surface of the chuck body 1.

そして、面吸着溝3間には、この吸着溝3と同じ溝幅と
深さを有する複数(図においては2条)のダスト溝7か
適宜間隔を存して同心円状に設けられている。
Between the surface suction grooves 3, a plurality (two in the figure) of dust grooves 7 having the same groove width and depth as the suction grooves 3 are provided concentrically with appropriate intervals.

上記構成の半導体ウェハ用真空チャックにおいて、半導
体ウェハWの真空吸着に際し、真空ポンプを作動して真
空吸引口6、連通室4及び吸引口5を介して吸着溝3内
を真空吸引すると、吸着面2と半導体ウェハWとの間に
介在するダストDは、第3図に詳記するように、その吸
着溝3方向への移動に伴ってそれぞれのダスト溝7内に
捕捉され、又、半導体ウェハWは、隣り合うゲス81フ
間又はダスト溝7と吸着溝3との間等に存在する吸着面
によって支持される。
In the vacuum chuck for semiconductor wafers having the above configuration, when vacuum suctioning the semiconductor wafer W, the vacuum pump is operated to vacuum suction the inside of the suction groove 3 through the vacuum suction port 6, the communication chamber 4, and the suction port 5, and the suction surface 2 and the semiconductor wafer W, as detailed in FIG. The W is supported by a suction surface existing between adjacent grooves 81 or between the dust groove 7 and the suction groove 3.

従って、吸着面2と半導体ウェハWとの間にダストDを
介在させることなく、かつ半導体ウェハWを変形させる
ことなくチャッキングできる。
Therefore, it is possible to chuck the semiconductor wafer W without interposing the dust D between the suction surface 2 and the semiconductor wafer W and without deforming the semiconductor wafer W.

なお、上記実施例においては、吸着溝3を2条とした場
合について述べたが、これに限定されるものではなく、
例えは半導体ウェハWか大口径となった場合には、吸着
溝3を3条以上とし、隣り合う吸着溝3間の吸着面2に
、この吸着?*3と同し溝幅の2条又は3条以上のダス
ト溝7を同心円状に設けてもよい。
In addition, in the above embodiment, the case where there are two suction grooves 3 has been described, but the invention is not limited to this.
For example, if the semiconductor wafer W has a large diameter, the number of suction grooves 3 is three or more, and the suction surface 2 between adjacent suction grooves 3 is used for this suction. *Two or three or more dust grooves 7 having the same groove width as in 3 may be provided concentrically.

又、吸着溝3及びダスト溝7は、円形のものに限らす、
円弧を円形状に連ねたものとしてもよい。
In addition, the suction groove 3 and the dust groove 7 are limited to circular shapes.
It is also possible to arrange arcs in a circular shape.

[発明の効果] 以上のように本発明によれば、吸着面と半導体ウェハと
の間に介在するダストが、真空吸引の際の吸着溝に向う
移動に伴ってダスト溝に捕捉されると共に、半導体ウェ
ハが、隣り合うダスト溝間又はダスト溝と吸引溝との間
等の吸着面によりて支持されるので、吸着面と半導体ウ
ェハとの間にダストを介在させることなく、半導体ウェ
ハの変形を防止してチャッキングすることができる。
[Effects of the Invention] As described above, according to the present invention, the dust interposed between the suction surface and the semiconductor wafer is captured in the dust groove as it moves toward the suction groove during vacuum suction, and Since the semiconductor wafer is supported by a suction surface between adjacent dust grooves or between a dust groove and a suction groove, deformation of the semiconductor wafer can be prevented without intervening dust between the suction surface and the semiconductor wafer. It can prevent chucking.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図は本発明の一実施例を示す半導体ウェハ
用真空チャックの平面図、断面図で、第3図はその作用
を示す断面図、第4図及び第5図はそれぞれ従来の半導
体ウェハ用真空チャックの作用を示す断面図である。 1 ・・チャ ツタ本体 2・・・吸着面 3・・・吸着溝 5・・・吸弓 孔 7・・・ダスト溝 W・・・半導体ウェハ D・・・ダス ト
1 and 2 are a plan view and a sectional view of a vacuum chuck for semiconductor wafers showing one embodiment of the present invention, FIG. 3 is a sectional view showing its operation, and FIGS. 4 and 5 are respectively conventional FIG. 3 is a cross-sectional view showing the operation of the semiconductor wafer vacuum chuck of FIG. 1 Chatter body 2 Suction surface 3 Suction groove 5 Suction hole 7 Dust groove W Semiconductor wafer D Dust

Claims (1)

【特許請求の範囲】[Claims] 1)底部に吸引孔を開設した複数の吸着溝を吸着面に同
心状に設けてなる半導体ウェハ用真空チャックにおいて
、前記隣り合う吸着溝間の吸着面に、この吸着溝と同じ
溝幅の複数のダスト溝を同心状に設けたことを特徴とす
る半導体ウェハ用真空チャック。
1) In a semiconductor wafer vacuum chuck in which a plurality of suction grooves with suction holes at the bottom are concentrically provided on the suction surface, a plurality of grooves having the same width as the suction grooves are provided on the suction surface between the adjacent suction grooves. A vacuum chuck for semiconductor wafers characterized by concentric dust grooves.
JP2023986A 1990-02-02 1990-02-02 Vacuum chuck for semiconductor wafer Expired - Fee Related JP2873598B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023986A JP2873598B2 (en) 1990-02-02 1990-02-02 Vacuum chuck for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023986A JP2873598B2 (en) 1990-02-02 1990-02-02 Vacuum chuck for semiconductor wafer

Publications (2)

Publication Number Publication Date
JPH03228348A true JPH03228348A (en) 1991-10-09
JP2873598B2 JP2873598B2 (en) 1999-03-24

Family

ID=12125901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023986A Expired - Fee Related JP2873598B2 (en) 1990-02-02 1990-02-02 Vacuum chuck for semiconductor wafer

Country Status (1)

Country Link
JP (1) JP2873598B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997008741A1 (en) * 1995-08-22 1997-03-06 Siemens Aktiengesellschaft Suction plate for wafer
JP2006245079A (en) * 2005-03-01 2006-09-14 Yaskawa Electric Corp Aligner apparatus
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
WO2010068294A1 (en) * 2008-12-10 2010-06-17 Axcelis Technologies, Inc. Electrostatic chuck with compliant coat
JP2014153302A (en) * 2013-02-13 2014-08-25 Murata Mfg Co Ltd Substrate thickness measurement device
CN104637854A (en) * 2013-11-13 2015-05-20 沈阳新松机器人自动化股份有限公司 Sucker used for sucking silicon wafers
JP2016062990A (en) * 2014-09-16 2016-04-25 株式会社デンソー Wafer prober device
US9429638B2 (en) 2008-11-21 2016-08-30 Cascade Microtech, Inc. Method of replacing an existing contact of a wafer probing assembly

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997008741A1 (en) * 1995-08-22 1997-03-06 Siemens Aktiengesellschaft Suction plate for wafer
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US7492175B2 (en) 2001-08-21 2009-02-17 Cascade Microtech, Inc. Membrane probing system
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7876115B2 (en) 2003-05-23 2011-01-25 Cascade Microtech, Inc. Chuck for holding a device under test
US8013623B2 (en) 2004-09-13 2011-09-06 Cascade Microtech, Inc. Double sided probing structures
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
JP2006245079A (en) * 2005-03-01 2006-09-14 Yaskawa Electric Corp Aligner apparatus
US9429638B2 (en) 2008-11-21 2016-08-30 Cascade Microtech, Inc. Method of replacing an existing contact of a wafer probing assembly
US10267848B2 (en) 2008-11-21 2019-04-23 Formfactor Beaverton, Inc. Method of electrically contacting a bond pad of a device under test with a probe
WO2010068294A1 (en) * 2008-12-10 2010-06-17 Axcelis Technologies, Inc. Electrostatic chuck with compliant coat
CN102246288A (en) * 2008-12-10 2011-11-16 艾克塞利斯科技公司 Electrostatic chuck with compliant coat
TWI479538B (en) * 2008-12-10 2015-04-01 Axcelis Tech Inc Electrostatic chuck with compliant coat
JP2014153302A (en) * 2013-02-13 2014-08-25 Murata Mfg Co Ltd Substrate thickness measurement device
CN104637854A (en) * 2013-11-13 2015-05-20 沈阳新松机器人自动化股份有限公司 Sucker used for sucking silicon wafers
JP2016062990A (en) * 2014-09-16 2016-04-25 株式会社デンソー Wafer prober device

Also Published As

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JP2873598B2 (en) 1999-03-24

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