JPH0430760B2 - - Google Patents
Info
- Publication number
- JPH0430760B2 JPH0430760B2 JP20823483A JP20823483A JPH0430760B2 JP H0430760 B2 JPH0430760 B2 JP H0430760B2 JP 20823483 A JP20823483 A JP 20823483A JP 20823483 A JP20823483 A JP 20823483A JP H0430760 B2 JPH0430760 B2 JP H0430760B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor laser
- light
- substrate
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000005253 cladding Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 201000009310 astigmatism Diseases 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20823483A JPS60101987A (ja) | 1983-11-08 | 1983-11-08 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20823483A JPS60101987A (ja) | 1983-11-08 | 1983-11-08 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60101987A JPS60101987A (ja) | 1985-06-06 |
| JPH0430760B2 true JPH0430760B2 (enrdf_load_stackoverflow) | 1992-05-22 |
Family
ID=16552869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20823483A Granted JPS60101987A (ja) | 1983-11-08 | 1983-11-08 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60101987A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0815226B2 (ja) * | 1985-09-04 | 1996-02-14 | 株式会社日立製作所 | 半導体レ−ザ素子 |
-
1983
- 1983-11-08 JP JP20823483A patent/JPS60101987A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60101987A (ja) | 1985-06-06 |
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