JPH0430759B2 - - Google Patents

Info

Publication number
JPH0430759B2
JPH0430759B2 JP20823383A JP20823383A JPH0430759B2 JP H0430759 B2 JPH0430759 B2 JP H0430759B2 JP 20823383 A JP20823383 A JP 20823383A JP 20823383 A JP20823383 A JP 20823383A JP H0430759 B2 JPH0430759 B2 JP H0430759B2
Authority
JP
Japan
Prior art keywords
type
semiconductor laser
light
substrate
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20823383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60101986A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP20823383A priority Critical patent/JPS60101986A/ja
Publication of JPS60101986A publication Critical patent/JPS60101986A/ja
Publication of JPH0430759B2 publication Critical patent/JPH0430759B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP20823383A 1983-11-08 1983-11-08 半導体レ−ザ装置 Granted JPS60101986A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20823383A JPS60101986A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20823383A JPS60101986A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS60101986A JPS60101986A (ja) 1985-06-06
JPH0430759B2 true JPH0430759B2 (enrdf_load_stackoverflow) 1992-05-22

Family

ID=16552853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20823383A Granted JPS60101986A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS60101986A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815226B2 (ja) * 1985-09-04 1996-02-14 株式会社日立製作所 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPS60101986A (ja) 1985-06-06

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