JPH0430755B2 - - Google Patents
Info
- Publication number
- JPH0430755B2 JPH0430755B2 JP15038684A JP15038684A JPH0430755B2 JP H0430755 B2 JPH0430755 B2 JP H0430755B2 JP 15038684 A JP15038684 A JP 15038684A JP 15038684 A JP15038684 A JP 15038684A JP H0430755 B2 JPH0430755 B2 JP H0430755B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- region
- charge injection
- gate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 claims description 26
- 239000007924 injection Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 230000015556 catabolic process Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15038684A JPS6129177A (ja) | 1984-07-19 | 1984-07-19 | 半導体不揮発性メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15038684A JPS6129177A (ja) | 1984-07-19 | 1984-07-19 | 半導体不揮発性メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6129177A JPS6129177A (ja) | 1986-02-10 |
| JPH0430755B2 true JPH0430755B2 (fr) | 1992-05-22 |
Family
ID=15495856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15038684A Granted JPS6129177A (ja) | 1984-07-19 | 1984-07-19 | 半導体不揮発性メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6129177A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004015745A2 (fr) * | 2002-08-13 | 2004-02-19 | General Semiconductor, Inc. | Dispositif mos a double diffusion a tension de seuil programmable |
| JP5644757B2 (ja) | 2011-12-28 | 2014-12-24 | 株式会社日本自動車部品総合研究所 | 圧力制御装置 |
-
1984
- 1984-07-19 JP JP15038684A patent/JPS6129177A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129177A (ja) | 1986-02-10 |
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