JPH04305036A - Production of transparent conductive zinc oxide film - Google Patents
Production of transparent conductive zinc oxide filmInfo
- Publication number
- JPH04305036A JPH04305036A JP6717891A JP6717891A JPH04305036A JP H04305036 A JPH04305036 A JP H04305036A JP 6717891 A JP6717891 A JP 6717891A JP 6717891 A JP6717891 A JP 6717891A JP H04305036 A JPH04305036 A JP H04305036A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- oxide film
- zinc
- film
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 26
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 6
- 150000003752 zinc compounds Chemical class 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 3
- 229930195729 fatty acid Natural products 0.000 claims description 3
- 239000000194 fatty acid Substances 0.000 claims description 3
- 150000004665 fatty acids Chemical class 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 14
- 238000002834 transmittance Methods 0.000 abstract description 7
- 239000000919 ceramic Substances 0.000 abstract description 3
- 229940006174 zinc valerate Drugs 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- -1 etc. Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 125000005594 diketone group Chemical group 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 150000003751 zinc Chemical class 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
- BUDAIZWUWHWZPQ-UHFFFAOYSA-L zinc;pentanoate Chemical compound [Zn+2].CCCCC([O-])=O.CCCCC([O-])=O BUDAIZWUWHWZPQ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、透明性導電性酸化亜鉛
膜の製造方法に関し、詳しくは、可視領域の透過性にす
ぐれると共に、眼に有害な４００ｎｍ以下の紫外線の遮
断性にすぐれ、従つて、デイスプレイパネル等に好適に
用いることができる透明性導電性酸化亜鉛膜の製造方法
に関する。[Industrial Application Field] The present invention relates to a method for producing a transparent conductive zinc oxide film, and more specifically, it has excellent transparency in the visible region, as well as excellent ability to block ultraviolet rays of 400 nm or less, which are harmful to the eyes. Therefore, the present invention relates to a method for producing a transparent conductive zinc oxide film that can be suitably used for display panels and the like.
【０００２】0002
【従来の技術】従来、導電性酸化亜鉛膜を製造するため
の方法としては、アルミニウム原子をトーパントとして
スパツタ法で製膜する方法（Ｊｐｎ． Ｊ． Ａｐｐｌ
． Ｐｈｙｓ．， ２４ （１９８５）Ｌ７８１）や、
ドーパントを用いることなく、スプレー法にて製膜し、
酸素空孔等にて導電性を発現させる方法 （Ｊ． Ｍａ
ｔｅｒ． Ｓｃｉ．， ２２ （１９８７） １３７９
） 等が知られている。しかしながら、上記スパツタ法
は、高価な設備を必要とし、しかも、量産性に劣り、一
方、スプレー法は、基盤となるガラスやセラミツクス等
の形状が制約を受ける等の欠点がある。[Prior Art] Conventionally, as a method for producing a conductive zinc oxide film, there has been a method of forming a film by a sputtering method using aluminum atoms as a dopant (Jpn. J. Appl.
．． Phys. , 24 (1985) L781) and
The film is formed by a spray method without using a dopant,
Method for developing conductivity through oxygen vacancies, etc. (J. Ma
ter. Sci. , 22 (1987) 1379
) etc. are known. However, the sputtering method requires expensive equipment and is poor in mass productivity, while the spraying method has drawbacks such as restrictions on the shape of the base material, such as glass or ceramics.
【０００３】0003
【発明が解決しようとする課題】現在、ＩＴＯ膜は、液
晶パネルやＥＬ、ＬＣＤ等のデイスプレイに広く用いら
れている。本発明者らは、従来の導電性酸化亜鉛膜の製
造における上記した問題を解決するために鋭意研究した
結果、基盤上に透明で導電性を有するＩＴＯ膜（酸化イ
ンジウム（ＩＩＩ）−酸化スズ膜）を形成し、その上に
酸化亜鉛膜を製膜することによつて、酸化亜鉛膜に導電
性が発現することを見出して、本発明に至つたものであ
る。[Problems to be Solved by the Invention] Currently, ITO films are widely used in displays such as liquid crystal panels, EL, and LCD. As a result of intensive research to solve the above-mentioned problems in the production of conventional conductive zinc oxide films, the inventors of the present invention discovered that a transparent and conductive ITO film (indium (III) oxide-tin oxide film) was formed on a substrate. ), and by forming a zinc oxide film thereon, the inventors discovered that the zinc oxide film exhibits electrical conductivity, leading to the present invention.
【０００４】0004
【課題を解決するための手段】本発明による透明性導電
性酸化亜鉛膜の製造方法は、基盤上に透明で導電性を有
するＩＴＯ膜を形成し、更に、その上に酸化亜鉛膜を製
膜することを特徴とする。即ち、本発明によれば、ガラ
スやセラミツクス等の基盤上に、透明で導電性を有する
ＩＴＯ膜を形成し、その上に酸化亜鉛膜を製膜すること
によつて、酸化亜鉛膜に導電性が発現し、しかも、酸化
亜鉛膜がＩＴＯ膜よりも屈折率が低いために、可視光の
透過率が当初のＩＴＯ膜を備えた基盤よりも高く、更に
、紫外線の遮断性も改善された透明性導電性酸化亜鉛膜
を得ることができる。[Means for Solving the Problems] A method for manufacturing a transparent conductive zinc oxide film according to the present invention involves forming a transparent and conductive ITO film on a substrate, and further forming a zinc oxide film on the substrate. It is characterized by That is, according to the present invention, a transparent and conductive ITO film is formed on a substrate such as glass or ceramics, and a zinc oxide film is formed thereon, thereby making the zinc oxide film conductive. Moreover, since the zinc oxide film has a lower refractive index than the ITO film, the transmittance of visible light is higher than that of the original substrate with the ITO film, and it is also transparent with improved ultraviolet blocking properties. A conductive zinc oxide film can be obtained.
【０００５】本発明の方法においては、ＩＴＯ膜は、ス
パツタリング法やイオンプレーテイング法等、従来、知
られているいずれの方法によつてガラス等の基盤上に形
成してもよい。また、本発明の方法においては、酸化亜
鉛膜は、例えば、予め加熱した基盤に酢酸亜鉛の水溶液
を噴霧するスプレー法等の熱分解法によつてもよく、ま
た、スパツタリング法やイオンプレーテイング法等、従
来、知られているいずれの方法によつてもよいが、好ま
しくは、酸化亜鉛膜は、基盤上にＩＴＯ膜を形成した後
、この基盤上に亜鉛化合物の溶液を塗布し、その亜鉛化
合物の塗膜を焼付けることによつて形成される。焼付け
温度は、通常、３００〜６００℃の範囲であるが、特に
これに限定されるものではない。このような方法は、上
述したような方法に比べて、簡単であり、工業上、有利
である。In the method of the present invention, the ITO film may be formed on a substrate such as glass by any conventionally known method such as sputtering or ion plating. Furthermore, in the method of the present invention, the zinc oxide film may be formed by a thermal decomposition method such as a spray method in which an aqueous solution of zinc acetate is sprayed onto a preheated substrate, or by a sputtering method or an ion plating method. Although the zinc oxide film may be formed by any conventionally known method, preferably, after forming an ITO film on a substrate, a solution of a zinc compound is applied onto the substrate, and the zinc oxide film is formed by coating the zinc compound solution on the substrate. It is formed by baking a coating of a compound. The baking temperature is usually in the range of 300 to 600°C, but is not particularly limited thereto. Such a method is simpler and industrially advantageous than the above-mentioned method.
【０００６】ここに、本発明の方法においては、上記亜
鉛化合物の溶液としては、炭素数３〜７の脂肪酸の亜鉛
塩又は炭素数５〜８のジケトンの亜鉛キレート化合物等
を有機溶剤に溶解してなるものが好ましく用いられる。
上記脂肪酸の亜鉛塩としては、例えば、ｎ−吉草酸亜鉛
やｎ−カプロン酸亜鉛が好ましく用いられ、また、ジケ
トンの亜鉛キレート化合物としては、例えば、亜鉛アセ
チルアセトネート等が好ましく用いられるが、これらに
限定されるものではない。[0006] In the method of the present invention, as the solution of the zinc compound, a zinc salt of a fatty acid having 3 to 7 carbon atoms or a zinc chelate compound of a diketone having 5 to 8 carbon atoms is dissolved in an organic solvent. It is preferably used. As the zinc salt of the fatty acid mentioned above, for example, zinc n-valerate or zinc n-caproate is preferably used, and as the zinc chelate compound of the diketone, for example, zinc acetylacetonate is preferably used. It is not limited to.
【０００７】また、亜鉛化合物の溶液を形成するための
有機溶媒としては、例えば、ｎ−ブタノール、ジメチル
ホルムアミド、アセチルアセトン、エチルセルソルブ等
のような比較的沸点の高いアルコール、エステル、ケト
ン等が好ましく用いられるが、これらに限定されるもの
ではない。[0007] As the organic solvent for forming the solution of the zinc compound, alcohols, esters, ketones, etc. having a relatively high boiling point, such as n-butanol, dimethylformamide, acetylacetone, ethyl cellosolve, etc., are preferable. but are not limited to these.
【０００８】[0008]
【発明の効果】以上のように、本発明によれば、基盤上
にＩＴＯ膜を製膜し、更に、その上に酸化亜鉛膜を製膜
することによつて、可視光の透過率がＩＴＯ膜を備えた
基盤よりも高く、しかも、紫外線の遮断性も改善された
透明性導電性酸化亜鉛膜を得ることができる。As described above, according to the present invention, by forming an ITO film on a substrate and further forming a zinc oxide film thereon, the transmittance of visible light can be improved to that of ITO. It is possible to obtain a transparent conductive zinc oxide film that has higher UV blocking properties than the substrate provided with the film and also has improved UV blocking properties.
【０００９】従つて、かかる本発明による透明性導電性
酸化亜鉛膜は、例えば、デイスプレイパネル等に好適に
用いることができる。[0009] Therefore, the transparent conductive zinc oxide film according to the present invention can be suitably used for, for example, display panels.
【００１０】0010
【実施例】以下に実施例を挙げて本発明を説明するが、
本発明はこれら実施例により何ら限定されるものではな
い。吉草酸亜鉛１０重量部をアセチルアセトン９０重量
部に溶解してなる溶液に、ＩＴＯ膜を備えたガラスから
なる基盤を浸漬した後、３２０℃の温度で３０分間焼成
して、透明性導電性酸化亜鉛膜を形成した。酸化亜鉛膜
の表面抵抗は、平均３０Ω／□であつた。[Examples] The present invention will be explained below with reference to Examples.
The present invention is not limited in any way by these Examples. A glass substrate with an ITO film is immersed in a solution prepared by dissolving 10 parts by weight of zinc valerate in 90 parts by weight of acetylacetone, and then baked at a temperature of 320°C for 30 minutes to form a transparent conductive zinc oxide. A film was formed. The average surface resistance of the zinc oxide film was 30Ω/□.
【００１１】ＩＴＯ膜は、その形成後に再加熱すると、
表面抵抗が増加することがよく知られている。上記ＩＴ
Ｏ膜を備えたガラス基盤は、当初、表面抵抗は２５Ω／
□であつたが、３２０℃で焼成すると、表面抵抗は６５
Ω／□であつた。従来のＩＴＯ膜を備えたガラス基盤と
、本発明に従つて、ＩＴＯ膜の上に更に酸化亜鉛膜を製
膜してなるガラス基盤の３５０〜７００ｎｍの透過率を
図１に示す。[0011] When the ITO film is reheated after its formation,
It is well known that surface resistance increases. The above IT
Initially, the surface resistance of the glass substrate with O film was 25Ω/
□, but when fired at 320℃, the surface resistance was 65
It was Ω/□. FIG. 1 shows the transmittance from 350 to 700 nm of a glass substrate provided with a conventional ITO film and a glass substrate formed by further forming a zinc oxide film on the ITO film according to the present invention.
【００１２】従来のＩＴＯ膜を備えたガラス基盤は、約
５００ｎｍ以上の長波長領域において、透過率が減少し
ていくが、本発明によるガラス基盤では、むしろ、透過
率が増大している。しかも、本発明によるガラス基盤に
よれば、約４００ｎｍ以下の低波長領域において、紫外
線の遮断性が従来のＩＴＯ膜を備えたガラス基盤よりも
高い。[0012] In the conventional glass substrate provided with an ITO film, the transmittance decreases in a long wavelength region of about 500 nm or more, but in the glass substrate according to the present invention, the transmittance increases. Furthermore, the glass substrate according to the present invention has higher ultraviolet ray blocking properties in the low wavelength region of about 400 nm or less than the conventional glass substrate provided with an ITO film.
【図１】は、ＩＴＯ膜を備えたガラス基盤と、更にその
上に酸化亜鉛膜を形成したガラス基盤のそれぞれの３５
０〜７００ｎｍにおける光透過率を示すグラフである。[Figure 1] shows 3500 yen of each of a glass substrate with an ITO film and a glass substrate with a zinc oxide film formed thereon.
It is a graph showing light transmittance in 0 to 700 nm.
Claims (3)
形成し、更に、その上に酸化亜鉛膜を製膜することを特
徴とする透明性導電性酸化亜鉛膜の製造方法。1. A method for producing a transparent conductive zinc oxide film, which comprises forming a transparent conductive ITO film on a substrate, and further forming a zinc oxide film thereon.
形成し、この基盤を亜鉛化合物の溶液に浸漬した後、焼
成して、酸化亜鉛膜を製膜することを特徴とする透明性
導電性酸化亜鉛膜の製造方法。2. Transparency characterized by forming a transparent and conductive ITO film on a substrate, immersing this substrate in a solution of a zinc compound, and then firing it to form a zinc oxide film. A method for producing a conductive zinc oxide film.
の亜鉛錯体又は炭素数５〜７のα，β−不飽和ケトンの
アセチルアセトン型錯体を有機溶剤に溶解したものであ
ることを特徴とする請求項２記載の透明性導電性酸化亜
鉛膜の製造方法。3. The solution of the zinc compound is characterized in that a zinc complex of a fatty acid having 3 to 7 carbon atoms or an acetylacetone type complex of an α,β-unsaturated ketone having 5 to 7 carbon atoms is dissolved in an organic solvent. The method for producing a transparent conductive zinc oxide film according to claim 2.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6717891A JPH04305036A (en) | 1991-03-29 | 1991-03-29 | Production of transparent conductive zinc oxide film |
| EP92301491A EP0500397B1 (en) | 1991-02-22 | 1992-02-21 | Method of producing transparent zinc oxide films |
| DE69213782T DE69213782T2 (en) | 1991-02-22 | 1992-02-21 | Process for the production of transparent zinc oxide films |
| US07/840,754 US5252356A (en) | 1991-02-22 | 1992-02-24 | Method of producing transparent zinc oxide films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6717891A JPH04305036A (en) | 1991-03-29 | 1991-03-29 | Production of transparent conductive zinc oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04305036A true JPH04305036A (en) | 1992-10-28 |
Family
ID=13337376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6717891A Pending JPH04305036A (en) | 1991-02-22 | 1991-03-29 | Production of transparent conductive zinc oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04305036A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100788184B1 (en) * | 2005-04-28 | 2007-12-26 | 티디케이가부시기가이샤 | A transparent conductor |
-
1991
- 1991-03-29 JP JP6717891A patent/JPH04305036A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100788184B1 (en) * | 2005-04-28 | 2007-12-26 | 티디케이가부시기가이샤 | A transparent conductor |
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