JPH0391795A - Worked articles - Google Patents
Worked articlesInfo
- Publication number
- JPH0391795A JPH0391795A JP1229574A JP22957489A JPH0391795A JP H0391795 A JPH0391795 A JP H0391795A JP 1229574 A JP1229574 A JP 1229574A JP 22957489 A JP22957489 A JP 22957489A JP H0391795 A JPH0391795 A JP H0391795A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- insulating layer
- layer
- difference
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 238000002310 reflectometry Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 72
- 238000000034 method Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- -1 poly(4-methyl-1-pentene) Polymers 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- SYFOAKAXGNMQAX-UHFFFAOYSA-N bis(prop-2-enyl) carbonate;2-(2-hydroxyethoxy)ethanol Chemical compound OCCOCCO.C=CCOC(=O)OCC=C SYFOAKAXGNMQAX-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Position Input By Displaying (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、導電性を有するパターニング加工物品に関し
、特に液晶表示電極あるいは入力タブレットと称される
画像入力素子など、広い分野で好適に使用される。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a patterned article having conductivity, and is particularly suitable for use in a wide range of fields such as liquid crystal display electrodes and image input devices called input tablets. Ru.
[従来技術]
現在、導電性を有するパターニング加工物品として、無
機ガラスや各種プラスチックなどを基板とし、その上に
導電層をパターニングしたものが広く使用されている。[Prior Art] Currently, as conductive patterned articles, products in which a substrate is made of inorganic glass or various plastics and a conductive layer is patterned thereon are widely used.
しかしながらこの物品においては、基板と導電層との反
射率差によって視差が生じ、視認性が悪くなるという問
題点を有しており、この問題点の改良について全くなさ
れていないのが現状である。However, this article has a problem in that parallax occurs due to the difference in reflectance between the substrate and the conductive layer, resulting in poor visibility, and at present no improvements have been made to this problem.
[発明が解決しようとする課題]
本発明は、かかる従来技術の問題点を解消しようとする
ものであり、パターニング加工物品の視差を無くし、視
認性を向上させることを目的とする。[Problems to be Solved by the Invention] The present invention aims to solve the problems of the prior art, and aims to eliminate parallax of a patterned article and improve visibility.
し課題を解決するための手段]
本発明は、上記目的を達成するために、下記の構成を有
する。Means for Solving the Problem] In order to achieve the above object, the present invention has the following configuration.
「透明基板の少なくともその一部に導電層と絶縁層とに
よるパターニングを形成してなる加工物品において、該
導電層と該絶縁層の反射率差が1,5%以下であること
を特徴とする加工物品。」本発明における透明基板とし
ては、透明であればどのような基板であっても用いるこ
とができ、例えば、無機ガラス、アクリル樹脂、ポリカ
ーボネート、ジエチレングリコールビスアリルカーボネ
ートポリマ− (ハロゲン化)ビスフェノールAのジ(
メタ)アクリレートポリマーおよびその共重合体、(ハ
ロゲン化)ビスフェノールAのウレタン変性ジ(メタ)
アクリレートポリマーおよびその共重合体、ポリスチレ
ンおよびその共重合体、ポリエステル、ポリエーテルス
ルホン、ポリ(4−メチル−1−ペンテン)などからな
る基板を用いることができ、またその形態として、例え
ば、シート状、フィルム状など種々の形態で用いること
ができる。"A processed article formed by patterning a conductive layer and an insulating layer on at least a portion of a transparent substrate, characterized in that the difference in reflectance between the conductive layer and the insulating layer is 1.5% or less. Processed article.'' As the transparent substrate in the present invention, any substrate can be used as long as it is transparent, such as inorganic glass, acrylic resin, polycarbonate, diethylene glycol bisallyl carbonate polymer (halogenated) bisphenol, etc. A no Ji (
meth)acrylate polymer and its copolymer, urethane-modified di(meth) of (halogenated) bisphenol A
Substrates made of acrylate polymers and copolymers thereof, polystyrene and copolymers thereof, polyesters, polyethersulfones, poly(4-methyl-1-pentene), etc. can be used, and their forms include, for example, sheet shapes. It can be used in various forms such as , film form, etc.
本発明では、前記の透明基板の少なくともその一部に、
導電層と絶縁層とによるバターニングが形或されてなる
ものであり、その導電層と絶縁層の反射率差が1.5%
以下であることが必要である。ここで、本発明において
反射率差とは、下記式において定義される。In the present invention, at least a portion of the transparent substrate includes:
It is formed by patterning a conductive layer and an insulating layer, and the difference in reflectance between the conductive layer and the insulating layer is 1.5%.
It is necessary that the following is true. Here, in the present invention, the reflectance difference is defined by the following formula.
反射率差=1導電層の全光線反射率一絶縁層の全光線反
射率
ここで、導電層および絶縁層の全光線反射率は、それぞ
れ可視光領域の全域における全光線反,射率にそれぞれ
視感強度を掛け合わせた値の積分値で表されるものであ
る。Reflectance difference = 1 Total light reflectance of conductive layer - Total light reflectance of insulating layer Here, the total light reflectance of the conductive layer and the insulating layer are the total light reflection and reflectance in the entire visible light region, respectively. It is expressed as an integral value of the value multiplied by the luminous intensity.
すなわち、反射率差が1.5%を越えると明らかにパタ
ーニングが認知され、外観上、好ましくないものとなる
からである。とくに導電層および/または絶縁層の面積
が大きいときには、■.O%以下であることが好ましい
。なお、本発明においては、より視認性を向上させるた
めに、反射光色ができるだけ同一、ないしは近いものが
さらに好ましい。That is, if the reflectance difference exceeds 1.5%, patterning will be clearly recognized and the appearance will be unfavorable. Particularly when the area of the conductive layer and/or insulating layer is large, ■. It is preferable that it is 0% or less. In addition, in the present invention, in order to further improve visibility, it is more preferable that the reflected light color be as same as possible or as close as possible.
また、反射率差を1.5%以下とする方法としては、特
に限定されるものではないが、例えば、それぞれ導電層
と絶縁層の屈折率や膜厚を適宜コントロールすることに
よって達或することができる。In addition, there are no particular limitations on how to reduce the reflectance difference to 1.5% or less, but it can be achieved, for example, by appropriately controlling the refractive index and film thickness of the conductive layer and the insulating layer, respectively. I can do it.
さらに、導電層と絶縁層との面積比はとくに限定される
ものではない。しかし、本発明がパターニング物品にお
ける視認性向上を目的とすることから、導電層および絶
縁層ともに、使用者が目視できる程度の面積を有してい
ることが好ましい。Furthermore, the area ratio between the conductive layer and the insulating layer is not particularly limited. However, since the present invention aims to improve visibility in a patterned article, it is preferable that both the conductive layer and the insulating layer have an area that is visible to the user.
なお、かかる導電層および/または絶縁層の膜の形成に
際しては、基板表面は清浄化されていることが好ましく
、清浄化方法としては界面活性剤による汚れ除去、有機
溶剤による脱脂さらにはフレオンによる汚れ除去などを
適用することができる。In addition, when forming such a conductive layer and/or an insulating layer, it is preferable that the substrate surface be cleaned, and cleaning methods include removing dirt with a surfactant, degreasing with an organic solvent, and dirt with Freon. Removal etc. can be applied.
また、透明基板と導電層あるいは絶縁層との接着性、耐
久性の向上を目的として、各層を設ける際に、あらかじ
め透明基板に各種の前処理を施すことも好適な手段であ
る。特に好ましく用いられる方法としては、活性化ガス
処理、濃度にもよるが酸、アルカリなどによる薬品処理
が挙げられる。Furthermore, in order to improve the adhesion and durability between the transparent substrate and the conductive layer or insulating layer, it is also a suitable means to subject the transparent substrate to various pretreatments in advance when providing each layer. Particularly preferably used methods include activated gas treatment and chemical treatment with acids, alkalis, etc. depending on the concentration.
かかる活性化ガス処理とは、常圧もしくは減圧下におい
て生戒するイオン、電子あるいは、励起された気体によ
る処理である。これらの活性化ガスを生成させる方法と
しては、例えば、コロナ放電、減圧下での直流、低周波
、高周波あるいはマイクロ波による高電圧放電などによ
る方法が挙げられる。特に減圧下で高周波放電によって
得られる低温プラズマによる処理が再現性、生産性など
の観点から、好ましく使用される。ここで使用されるガ
スは、特に限定されるものでないが、具体例としては酸
素、窒素、水素、炭酸ガス、二酸化硫黄、ヘリウム、ネ
オン、アルゴン、フレオン、水蒸気、アンモニア、一酸
化炭素、塩素、一酸化窒素、二酸化窒素などが挙げられ
る。これらは、一種のみならず、二種以上混合しても使
用可能である。さらには、同様の目的で前記使用に際し
ては、処理基板の温度を上げることも可能である。Such activated gas treatment is treatment using ions, electrons, or excited gas under normal pressure or reduced pressure. Examples of methods for generating these activated gases include methods using corona discharge, direct current under reduced pressure, high voltage discharge using low frequency, high frequency, or microwave. In particular, treatment with low-temperature plasma obtained by high-frequency discharge under reduced pressure is preferably used from the viewpoint of reproducibility and productivity. The gases used here are not particularly limited, but specific examples include oxygen, nitrogen, hydrogen, carbon dioxide, sulfur dioxide, helium, neon, argon, freon, water vapor, ammonia, carbon monoxide, chlorine, Examples include nitrogen monoxide and nitrogen dioxide. These can be used not only alone but also as a mixture of two or more. Furthermore, in the above-mentioned use for the same purpose, it is also possible to raise the temperature of the processed substrate.
また、導電層、絶縁層の表面硬度、耐熱性、耐アルカリ
性、接着性などの向上を目的として、基板と導電層およ
び絶縁層との間に、ハードコート性を有する被膜を設け
ることも好適である。It is also preferable to provide a film with hard coat properties between the substrate and the conductive layer and the insulating layer in order to improve the surface hardness, heat resistance, alkali resistance, adhesion, etc. of the conductive layer and the insulating layer. be.
ハードコート被膜としては、ハードコート性を有するも
のであれば、いかなるものでもよい。中でも特に好まし
い使用可能被膜の例としては、メラミン樹脂、エポキシ
樹脂、ポリシロキサン樹脂、アクリル樹脂などが挙げら
れ、特に高い表面硬度を与え、さらに耐熱性、耐アルカ
リ性が良好であるなどの観点から熱硬化性樹脂が好まし
く用いられる。さらに表面硬度向上、接着強度.の観点
からボリシロキサン樹脂が好ましく用いられる。As the hard coat film, any film may be used as long as it has hard coat properties. Among them, particularly preferred examples of coatings that can be used include melamine resin, epoxy resin, polysiloxane resin, and acrylic resin. Curable resins are preferably used. Furthermore, surface hardness is improved and adhesive strength is improved. From this viewpoint, polysiloxane resin is preferably used.
本発明において導電層としては、電気抵抗値が1×10
°Ω/口以上、1×109Ω/口以下の範囲にあること
が好ましいが、さらに好ましくは、1×■0°Ω/口以
上、1×106Ω/口以下の範囲のものである。導電層
の成分および形成方法としては、金、パラジウム、クロ
ムなどの金属や酸化インジウム、酸化スズなどの金属酸
化物を、真空蒸着、スパッタリング、塗布などの方法で
形成することができ、導電層の成分および形成方法とし
て従来公知の手段を、本発明においても用いることがで
きる。これらの手段の中でも、高透明性、高耐久性、高
導電性を付与する点で、Inおよび/またはSnからな
る酸化物を真空蒸着法または低温スパッタリング法で形
或することが最も好適である。また、高透明性、高導電
性、接着性、耐熱性、耐アルカリ性などの観点から、使
用する透明基板の表面温度をできるだけ高温にするとよ
り好適であり、具体的には100℃〜350℃が特に好
適である。また、Inおよび/またはSnからなる酸化
物の組成比は、導電層として要求されるシート抵抗値、
透明性などによって決定されるべきであるが、低いシー
ト抵抗値を与え、高透明性付与の観点からSn02の含
有量を20wt%以下とすることが好ましい。In the present invention, the conductive layer has an electrical resistance value of 1×10
It is preferably in the range of 1×10 9 Ω/mouth or more and 1×10 9 Ω/mouth or less, and more preferably 1×■0° Ω/mouth or more and 1×10 6 Ω/mouth or less. Regarding the components and formation method of the conductive layer, metals such as gold, palladium, and chromium, and metal oxides such as indium oxide and tin oxide can be formed by methods such as vacuum evaporation, sputtering, and coating. Conventionally known components and formation methods can be used in the present invention. Among these means, it is most preferable to form an oxide consisting of In and/or Sn by vacuum evaporation or low-temperature sputtering in terms of imparting high transparency, high durability, and high conductivity. . In addition, from the viewpoint of high transparency, high conductivity, adhesion, heat resistance, alkali resistance, etc., it is more preferable to make the surface temperature of the transparent substrate used as high as possible, specifically 100°C to 350°C. Particularly suitable. In addition, the composition ratio of the oxide consisting of In and/or Sn is determined by the sheet resistance value required for the conductive layer,
Although it should be determined by transparency etc., the content of Sn02 is preferably 20 wt% or less from the viewpoint of providing a low sheet resistance value and high transparency.
導電層の膜厚は、特に限定されるものではないが透明性
、導電性、可とう性、表面クラック発生防止などの点か
ら30A〜5000人が好ましく用いられる。The thickness of the conductive layer is not particularly limited, but from the viewpoint of transparency, conductivity, flexibility, prevention of surface cracks, etc., a thickness of 30 to 5000 is preferably used.
次に、本発明における絶縁層の戊分としては、とくに限
定されないが例えば、SiO , 2rO2、AI20
3、TiO 、Ti02、Ti+03、Y203、Yb
, o3、MgO 、Ta203 , Ce02、lI
f02などの比較的屈折率の高い材料が好ましく使用さ
れる例として挙げられる。これらの物質は、1種のみな
らず2種以上を混合して使用することも可能である。さ
らに、これらの被膜は単層膜であっても多層膜であって
もよい。Next, the material of the insulating layer in the present invention is not particularly limited, but includes, for example, SiO2, 2rO2, AI20
3. TiO , Ti02, Ti+03, Y203, Yb
, o3, MgO, Ta203, Ce02, lI
An example of a material having a relatively high refractive index such as f02 is preferably used. These substances can be used not only alone but also as a mixture of two or more. Furthermore, these films may be a single layer film or a multilayer film.
また、絶縁層の形成方法としては、威膜のしやすさの点
から真空蒸着法またはスパッタリング法が好ましく用い
られ、またその膜厚としては、耐熱性の点からは1μm
以下が好ましいが、導電層の種類、厚みによって決定さ
れるべきものであり、特に限定されるものではない。In addition, as a method for forming the insulating layer, a vacuum evaporation method or a sputtering method is preferably used from the viewpoint of ease of forming a film, and the film thickness is 1 μm from the viewpoint of heat resistance.
The following is preferable, but it should be determined depending on the type and thickness of the conductive layer, and is not particularly limited.
また、導電層、絶縁層のパターニング方法としては、例
えばフォトレジスト法、マスキング法などが挙げられる
が本発明は、特に限定されるものではない。さらに、パ
ターニングされた導電層と絶縁層との絶縁性としては、
印加電圧が例えば、50Vである場合、109Ω/口以
上が特に良好な絶縁性を有する。Furthermore, examples of methods for patterning the conductive layer and the insulating layer include a photoresist method and a masking method, but the present invention is not particularly limited thereto. Furthermore, the insulation between the patterned conductive layer and the insulating layer is as follows:
When the applied voltage is, for example, 50 V, a resistance of 10 9 Ω/hole or more has particularly good insulation properties.
また、本発明の導電性を有する加工物品をいわゆる入力
タブレットと称される画像入力素子などに使用する場合
、種々の加工が必要であり、例えば熱加工によって透明
基板と導電層または絶縁層間に熱収縮差が生じてたわみ
が発生することがある。かかる、たわみを防止する観点
から、導電層、絶縁層を設けた面の反対面に金属酸化物
層を被覆することも好適である。Furthermore, when the electrically conductive processed article of the present invention is used in an image input device called an input tablet, various processing is required. Deflection may occur due to differential shrinkage. From the viewpoint of preventing such deflection, it is also suitable to coat the surface opposite to the surface on which the conductive layer and the insulating layer are provided with a metal oxide layer.
本発明によって得られる加工物品は、高透明性、高導電
性、高耐久性に加えて特に視認性,に優れていることか
ら、特に、液晶表示電極、画像入力装置などに好ましく
使用される。The processed article obtained by the present invention has excellent visibility in addition to high transparency, high conductivity, and high durability, and is therefore particularly preferably used for liquid crystal display electrodes, image input devices, and the like.
[実施例]
更に詳細に説明するために、以下に実施例を挙げるが本
発明は、これらに限定されるものではない。[Example] In order to explain in more detail, Examples are given below, but the present invention is not limited thereto.
実施例1
(1)導電層の形成
透明基板として無機ガラスを用い、スパッタリング法に
よってIn−Sn酸化物を300人の厚さで被覆させた
。次いで、フォトレジスト層による任意のパターンに形
威した後、アルカリエッチングを施し、続いてフォトレ
ジスト層を除去することにより、パターニングされた導
電層を有する基板が得られた。デジタルマルチテスター
MD−200C (三和電気計器■製)を使用し、23
℃、50%RHで測定した。その結果、130Ω/口と
非常に良好な導電性を有していた。また、デジタルSM
−3カラーコンピューター(スガ試験機(株)製)を用
いて測定したところ、導電層の全光線反射率は9.37
%であった。Example 1 (1) Formation of conductive layer Inorganic glass was used as a transparent substrate, and In--Sn oxide was coated to a thickness of 300 nm by sputtering. Next, after forming an arbitrary pattern using a photoresist layer, alkali etching was performed and the photoresist layer was subsequently removed, thereby obtaining a substrate having a patterned conductive layer. Using the digital multi tester MD-200C (manufactured by Sanwa Denki Meiki), 23
Measured at 50% RH. As a result, it had very good electrical conductivity of 130Ω/hole. Also, digital SM
-3 When measured using a color computer (manufactured by Suga Test Instruments Co., Ltd.), the total light reflectance of the conductive layer was 9.37.
%Met.
■ 絶縁層の形威
(1)で得られたパターニング物品の導電層にマスキン
グ加工を施し、真空蒸着法でZrO2を200Aの厚さ
で被覆させた。得られた絶縁層の部分について、(1)
項と同様に全光線反射率を測定した。(2) Shape of Insulating Layer The conductive layer of the patterned article obtained in step (1) was masked and coated with ZrO2 to a thickness of 200A using a vacuum evaporation method. Regarding the obtained insulating layer part, (1)
The total light reflectance was measured in the same manner as in Section 1.
その結果、8.73%であった。The result was 8.73%.
以上の方法によって形戊された導電性を有する加工物品
の導電2層と絶縁層の反射率差は、0. 64%であ
り、また、目視観察を行ったところ視差のないものであ
った。さらに、絶縁抵抗計(共立電気計器■製)を使用
し、印加電圧を50Vとし導電層、絶縁層の絶縁性を測
定した。その結果、10lOΩ以上と良好な絶縁性を有
していた。The reflectance difference between the two conductive layers and the insulating layer of the conductive processed article formed by the above method is 0. 64%, and visual observation showed that there was no parallax. Furthermore, using an insulation resistance meter (manufactured by Kyoritsu Denki Keiki ■), the insulation properties of the conductive layer and the insulating layer were measured at an applied voltage of 50 V. As a result, it had good insulation properties of 10 lOΩ or more.
実施例2
実施例1において(2)項の絶縁層の膜厚を30OAに
変える以外は、すべて同様に行った。Example 2 The same procedure as in Example 1 was carried out except that the thickness of the insulating layer in item (2) was changed to 30 OA.
絶縁層の全光線反射率は、10.56%であった。導電
層と絶縁層の反射率差は、1.19%であり、視差のな
いものであった。The total light reflectance of the insulating layer was 10.56%. The difference in reflectance between the conductive layer and the insulating layer was 1.19%, with no parallax.
比較例↑
実施例1において(2)項の絶縁層を設けない以外は、
すべて同様に行った。Comparative example ↑ Except for not providing the insulating layer in item (2) in Example 1,
Everything went the same way.
無機ガラスの全光線反射率は、4.80%であった。導
電層と無機ガラス基板との反射率差は、4.57%であ
り、視差が目立ち視認性の不良なものであった。The total light reflectance of the inorganic glass was 4.80%. The reflectance difference between the conductive layer and the inorganic glass substrate was 4.57%, and the parallax was noticeable and visibility was poor.
比較例2
実施例2において絶縁層をTiQ2と変え、絶縁層の全
光線反射率を17.67%としたところ、導電層と絶縁
層の反射率差が、8.30%であり、視差が目立ち視認
性の不良なものであった。 実施例3
(1)ハードコート性を有する透明基板の作製(イ)γ
−グリシドキシプ口ピルトリメトキシシラン加水分解物
の調製
撹拌装置を備えた反応器中にγ−グリシドキシプ口ピル
トリメトキシシラン515部を仕込み、撹拌しながら0
.0INのHCI,118部を液温10℃に保ちながら
滴下し、滴下終了後30分間撹拌を続けて、加水分解を
行った。Comparative Example 2 When the insulating layer in Example 2 was changed to TiQ2 and the total light reflectance of the insulating layer was set to 17.67%, the reflectance difference between the conductive layer and the insulating layer was 8.30%, and the parallax was It was conspicuous and had poor visibility. Example 3 (1) Preparation of transparent substrate with hard coat properties (a) γ
- Preparation of glycidoxypyltrimethoxysilane hydrolyzate 515 parts of γ-glycidoxypyltrimethoxysilane were charged into a reactor equipped with a stirring device, and while stirring,
.. 118 parts of 0IN HCI was added dropwise while maintaining the liquid temperature at 10°C, and after the dropwise addition was completed, stirring was continued for 30 minutes to perform hydrolysis.
(ロ)液状組成物の調製
前記(イ)の加水分解物にエタノール223部、n−プ
ロパノール223部、シリコーン系界面活性剤1.8部
を添加混合し、さらにアルミニウムアセチルアセトナー
ト18、2部を添加し、充分撹拌溶解させた後、液状組
成物を得た。(b) Preparation of liquid composition 223 parts of ethanol, 223 parts of n-propanol, and 1.8 parts of silicone surfactant were added and mixed to the hydrolyzate of (a) above, and further 18.2 parts of aluminum acetylacetonate was added. was added and sufficiently stirred and dissolved to obtain a liquid composition.
(ハ)塗布および乾燥
透明基板として1mm厚“CR−39” (ジエチレン
グリコールビスアリルカーボネート重合体)シートを用
い、前記(口)で調製した液状組或物を引き上げ速度2
0C[[l/分の速度で浸漬塗布し、次いで、82°C
,12分の予備硬化を行い、さらに93℃,4時間加熱
した後、ハードコート性を有する透明基板が得られた。(c) Coating and drying Using a 1 mm thick "CR-39" (diethylene glycol bisallyl carbonate polymer) sheet as a transparent substrate, the liquid composition prepared in the above (section) was pulled up at a speed of 2.
Dip coating at a rate of 0 C [[l/min, then 82 °C
After precuring for 12 minutes and further heating at 93° C. for 4 hours, a transparent substrate with hard coat properties was obtained.
かかるハードコート性を有する透明基板に実施例2と同
様に導電層、絶縁層を設けた。A conductive layer and an insulating layer were provided on the transparent substrate having such hard coat properties in the same manner as in Example 2.
得られた導電層の導電性は、150Ω/口であった。The conductivity of the obtained conductive layer was 150Ω/hole.
また、導電層と絶縁層の反射率差は、0.94%であり
、視差のないものであった。Further, the difference in reflectance between the conductive layer and the insulating layer was 0.94%, and there was no parallax.
[発明の効果]
本発明の加工物品は、視差がなく、視認性が良好であり
、また、優れた耐久性,透明性を有するため、液晶表示
電極、画像人力素子など種々の用途において好適に使用
しうる。[Effects of the Invention] The processed article of the present invention has no parallax, good visibility, and excellent durability and transparency, so it is suitable for various uses such as liquid crystal display electrodes and image human power devices. Can be used.
Claims (1)
とによるパターニングを形成してなる加工物品において
、該導電層と該絶縁層の反射率差が1.5%以下である
ことを特徴とする加工物品。(1) A processed article formed by patterning a conductive layer and an insulating layer on at least a portion of a transparent substrate, characterized in that the difference in reflectance between the conductive layer and the insulating layer is 1.5% or less. Processed goods.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1229574A JPH0391795A (en) | 1989-09-05 | 1989-09-05 | Worked articles |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1229574A JPH0391795A (en) | 1989-09-05 | 1989-09-05 | Worked articles |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0391795A true JPH0391795A (en) | 1991-04-17 |
Family
ID=16894312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1229574A Pending JPH0391795A (en) | 1989-09-05 | 1989-09-05 | Worked articles |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0391795A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7842736B2 (en) | 2000-08-09 | 2010-11-30 | British American Tobacco (Investments) Limited | Porous carbons |
US8591855B2 (en) | 2000-08-09 | 2013-11-26 | British American Tobacco (Investments) Limited | Porous carbons |
JP2014194787A (en) * | 2014-04-24 | 2014-10-09 | Nitto Denko Corp | Transparent conductive film and touch panel |
US9907336B2 (en) | 2005-03-29 | 2018-03-06 | British American Tobacco (Investments) Limited | Porous carbon materials and smoking articles and smoke filters therefor incorporating such materials |
-
1989
- 1989-09-05 JP JP1229574A patent/JPH0391795A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7842736B2 (en) | 2000-08-09 | 2010-11-30 | British American Tobacco (Investments) Limited | Porous carbons |
US7850942B2 (en) | 2000-08-09 | 2010-12-14 | British American Tobacco (Investments) Ltd. | Porous carbons |
US8227518B2 (en) | 2000-08-09 | 2012-07-24 | British American Tobacco (Investments) Ltd. | Porous carbons |
US8591855B2 (en) | 2000-08-09 | 2013-11-26 | British American Tobacco (Investments) Limited | Porous carbons |
US9907336B2 (en) | 2005-03-29 | 2018-03-06 | British American Tobacco (Investments) Limited | Porous carbon materials and smoking articles and smoke filters therefor incorporating such materials |
JP2014194787A (en) * | 2014-04-24 | 2014-10-09 | Nitto Denko Corp | Transparent conductive film and touch panel |
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