JPH04296087A - Enameled board and manufacture thereof - Google Patents
Enameled board and manufacture thereofInfo
- Publication number
- JPH04296087A JPH04296087A JP6159191A JP6159191A JPH04296087A JP H04296087 A JPH04296087 A JP H04296087A JP 6159191 A JP6159191 A JP 6159191A JP 6159191 A JP6159191 A JP 6159191A JP H04296087 A JPH04296087 A JP H04296087A
- Authority
- JP
- Japan
- Prior art keywords
- metal core
- enamel
- glass particles
- glass frit
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 210000003298 dental enamel Anatomy 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 239000011162 core material Substances 0.000 description 24
- 230000007547 defect Effects 0.000 description 7
- 238000004070 electrodeposition Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000016674 enamel mineralization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、サーマルプリンタヘッ
ドやハイブリッドＩＣなどに利用されるホーロー基板に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hollow substrate used in thermal printer heads, hybrid ICs, and the like.
【０００２】0002
【従来の技術】従来、このような分野の技術としては、
例えば特開平１−１１０７８９号に記載されるものがあ
った。これは、ホーロー用鋼板やステンレス鋼板にガラ
ス粒子を付着させ、これを焼成し、ホーロー層を形成す
ることによって得られる。[Prior Art] Conventionally, technologies in this field include:
For example, there was one described in JP-A-1-110789. This can be obtained by attaching glass particles to a steel plate for enamel or a stainless steel plate, and firing the glass particles to form an enamel layer.
【０００３】即ち、金属コア表面の平滑化処理及び／又
は前処理を施した後、この金属コア表面上に平均粒子径
０．５〜４μｍの結晶化ガラスを電気泳動電着し、更に
これを焼成してホーロー層を形成する。これにより、最
大表面粗さＲｔ（低域カットオフ値λｃ＝０．２５ｍｍ
）が１．２μｍ以下で、ろ波最大うねりＷｃｍ（高域カ
ットオフ値ｆｈ＝０．８ｍｍ）が１μｍ以下の表面平滑
性を有するようにしたものである。That is, after smoothing and/or pre-treating the surface of the metal core, crystallized glass having an average particle size of 0.5 to 4 μm is electrophoretically electrodeposited on the surface of the metal core, and then It is fired to form an enamel layer. As a result, the maximum surface roughness Rt (low cutoff value λc = 0.25 mm
) is 1.2 μm or less, and the maximum filtering waviness Wcm (high frequency cutoff value fh=0.8 mm) is 1 μm or less.
【０００４】ここで使われる粒子（以下、ガラスフリッ
トという）については、耐熱性、耐食性の優れた結晶質
のガラスが用いられる。これは、このホーロー基板の使
用目的がハイブリッドＩＣ等であって、この製造工程で
高温度（例えば、厚膜製造工程で約８５０℃）で加熱さ
れるため、非晶質のガラスでは、耐えられないためであ
る。[0004] As for the particles used here (hereinafter referred to as glass frit), crystalline glass having excellent heat resistance and corrosion resistance is used. This is because the purpose of this hollow substrate is hybrid IC, etc., and it is heated at high temperatures (for example, about 850 degrees Celsius in the thick film manufacturing process) during this manufacturing process, so amorphous glass cannot withstand it. This is because there is no
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、結晶性
ガラスフリットは非晶質のガラスフリットに比べ、焼成
時に溶融した時の流動性が悪く、焼成後のホーロー表面
が粗くなったり、ピンホールが発生する。そのために、
例えば、ハイブリッドＩＣの回路形成が困難になったり
、回路が短絡するというような問題があった。[Problem to be solved by the invention] However, compared to amorphous glass frit, crystalline glass frit has poor fluidity when melted during firing, and the enamel surface becomes rough and pinholes occur after firing. do. for that,
For example, there have been problems such as difficulty in forming a hybrid IC circuit and short-circuiting of the circuit.
【０００６】本発明は、以上述べた問題点を除去し、耐
熱性、耐食性に優れ、しかも、ホーロー表面が平滑で、
かつ、ピンホールが生じることのないホーロー基板及び
その製造方法を提供することを目的とする。The present invention eliminates the above-mentioned problems, has excellent heat resistance and corrosion resistance, and has a smooth enamel surface.
Another object of the present invention is to provide a hollow substrate that does not generate pinholes and a method for manufacturing the same.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記目的を達
成するために、ホーロー基板において、結晶性ガラス粒
子に非晶質のガラス粒子を重量比で２〜７％混入し、こ
れを金属コアに塗布した後、焼成して金属コアの周囲を
ホーロー層で被覆するようにしたものである。また、ホ
ーロー基板の製造方法において、金属コアにニッケルメ
ッキを施す工程と、結晶性ガラス粒子に非晶質のガラス
粒子を重量比で２〜７％混入したものを溶媒に加えて攪
拌する工程と、該液中に前記金属コアを浸し、電着する
工程と、ガラス粒子が電着された金属コアを液中から引
き上げて乾燥する工程と、該金属コアを加熱炉中で焼成
する工程とを施すようにしたものである。[Means for Solving the Problems] In order to achieve the above object, the present invention mixes 2 to 7% by weight of amorphous glass particles into crystalline glass particles in an enamel substrate, and mixes the amorphous glass particles with metal. After being applied to the core, it is fired to cover the periphery of the metal core with an enamel layer. In addition, the method for manufacturing the enamel board includes a step of nickel plating the metal core, and a step of adding 2 to 7% by weight of amorphous glass particles to the crystalline glass particles and stirring the mixture. , a step of immersing the metal core in the liquid and electrodepositing it, a step of pulling up the metal core with the glass particles electrodeposited from the liquid and drying it, and a step of firing the metal core in a heating furnace. It was designed to be implemented.
【０００８】[0008]
【作用】本発明によれば、上記したように、ホーロー基
板において、結晶性ガラス粒子に非晶質のガラス粒子を
重量比で２〜７％混入し、これを金属コアに塗布した後
、焼成して金属コアの周囲をホーロー層で被覆するよう
にしたので、結晶性ガラス粒子を使用したにもかかわら
ず、その表面の粗さが小さく欠陥のないホーロー基板を
得ることができる。[Operation] According to the present invention, as described above, in the enamel substrate, 2 to 7% by weight of amorphous glass particles are mixed with crystalline glass particles, and after coating this on the metal core, baking is performed. Since the periphery of the metal core is coated with the enamel layer, it is possible to obtain an enamel substrate with a small surface roughness and no defects, even though crystalline glass particles are used.
【０００９】[0009]
【実施例】以下、本発明の実施例について図面を参照し
ながら詳細に説明する。図１は本発明の実施例を示すホ
ーロー基板の要部工程を示す断面図、図２は本発明の実
施例を示すホーロー基板の断面図である。本発明に係る
ホーロー基板のホーロー層の形成工程は、次のように行
なった。Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing the main steps of a hollow substrate according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the hollow substrate according to an embodiment of the present invention. The process of forming the hollow layer of the hollow substrate according to the present invention was carried out as follows.
【００１０】（ａ）金属コア（金属コア材料）１として
、純鉄を使用し、これにニッケルメッキを施す。
（ｂ）ホーロー層２のガラスフリットは、スチール基板
被覆用粉末ガラス（結晶性ガラス 日本電気硝子製
軟化温度７６５℃）に、非晶質のガラスフリット（奥
野製薬製 軟化温度５３０℃）を、重量比で０〜１０
％混入したものを使用した。(a) Pure iron is used as the metal core (metal core material) 1, and nickel plating is applied to it. (b) The glass frit of the enamel layer 2 is powder glass for coating steel substrates (crystalline glass manufactured by Nippon Electric Glass Co., Ltd.).
Softening temperature: 765°C) and amorphous glass frit (manufactured by Okuno Pharmaceutical, softening temperature: 530°C) at a weight ratio of 0 to 10.
% was used.
【００１１】（ｃ）このガラスフリットを金属コア１に
塗布するのであるが、塗布方法としては、電着法を採用
した。図１を参照しながらその電着工程について説明す
る。
〔１工程〕電着槽１０内の溶媒３としてはイソプロアル
コールと酢酸エチルを混合したものを使用した。該溶媒
３に結晶性ガラスフリット４ａと非晶質のガラスフリッ
ト４ｂからなるガラスフリット４を加える。例えば、溶
媒１００ｃｃ当たりガラスフリットを２〜４ｇ（結晶性
ガラスフリット４ａと非晶質のガラスフリット４ｂが含
まれている）を加え、良く攪拌する。(c) This glass frit was applied to the metal core 1, and an electrodeposition method was adopted as the application method. The electrodeposition process will be explained with reference to FIG. [Step 1] As the solvent 3 in the electrodeposition tank 10, a mixture of isoproalcohol and ethyl acetate was used. A glass frit 4 consisting of a crystalline glass frit 4a and an amorphous glass frit 4b is added to the solvent 3. For example, 2 to 4 g of glass frit (containing crystalline glass frit 4a and amorphous glass frit 4b) is added per 100 cc of solvent and stirred well.
【００１２】〔２工程〕この液中に、前記した金属コア
１をセットし、この金属コア１の両側に電極５，５（ス
テンレス製）を対向させて浸漬する。
〔３工程〕金属コア１と電極５，５間に直流電源１１よ
り直流電圧を印加する。[Step 2] The metal core 1 described above is set in this liquid, and the electrodes 5, 5 (made of stainless steel) are placed on both sides of the metal core 1, facing each other, and immersed. [Step 3] A DC voltage is applied between the metal core 1 and the electrodes 5, 5 from the DC power supply 11.
【００１３】ここで、金属コア１と電極５，５間を２ｃ
ｍとし、この間に２００Ｖ印加した。図１に示すように
、金属コア１を（−）極に、電極を（＋）極に接続する
。このように構成すると、溶媒中に分散しているガラス
フリット４は、金属コア１に引き付けられ、表面に付着
する。
〔４工程〕そこで、金属コア１を液中から引き上げて乾
燥する。[0013] Here, the distance between the metal core 1 and the electrodes 5, 5 is 2c.
m, and 200V was applied during this time. As shown in FIG. 1, the metal core 1 is connected to the (-) pole and the electrode is connected to the (+) pole. With this configuration, the glass frit 4 dispersed in the solvent is attracted to the metal core 1 and adheres to the surface. [Step 4] Then, the metal core 1 is pulled out of the liquid and dried.
【００１４】ここまでで、ガラスフリット４の塗布工程
が終了する。
〔５工程〕次に、ガラスフリットを塗布した金属コア１
を加熱炉中で焼成する。加熱温度は８００〜８５０℃で
１０分間保持する。以上の工程でホーロー形成が終了し
、金属コア１の周囲はホーロー層２で被覆される。[0014] Up to this point, the process of applying the glass frit 4 is completed. [Step 5] Next, metal core 1 coated with glass frit
is fired in a heating furnace. The heating temperature is maintained at 800 to 850°C for 10 minutes. The enamel formation is completed through the above steps, and the periphery of the metal core 1 is covered with the enamel layer 2.
【００１５】図３は上記工程で製作したホーロー基板の
ガラスフリット混入率とホーロー表面の粗さの関係を示
す図である。この図に示すように、結晶性ガラスフリッ
トに非晶質のガラスフリットを２〜５％添加したものは
、表面が平滑〔例えば、Ｒｍａｘ （層の最も低い部分
と最も高い部分間の寸法）が０．５〜０．６μｍ）で、
また、ピンホールも少ないことがわかる。更に、５〜７
％まではＲｍａｘ は略１μｍ以内であり、表面粗さの
許容範囲内にある。FIG. 3 is a diagram showing the relationship between the glass frit mixing ratio and the roughness of the enamel surface of the enamel substrate manufactured by the above process. As shown in this figure, when 2 to 5% of amorphous glass frit is added to crystalline glass frit, the surface is smooth [for example, Rmax (dimension between the lowest and highest part of the layer)] 0.5-0.6 μm),
It can also be seen that there are fewer pinholes. Furthermore, 5 to 7
%, Rmax is approximately within 1 μm, which is within the allowable range of surface roughness.
【００１６】この理由としては次のことが考えられる。
即ち、一般的に非晶質のガラスフリットを加熱し、軟化
温度に達し、更に温度を高くしていくと、次第に粘度が
低くなり流動するようになる。従って、この場合は、十
分高い温度を保持することによって、金属コアの表面を
ガラスで被覆することは容易である。一方、結晶性ガラ
スフリットの温度を上昇させた場合は、軟化温度に達す
ると、すぐにガラスの結晶化が始まり、温度を更に上昇
すると、ますます結晶化スピードは速くなり、粘度は高
くなっていく。従って、ほとんど流動せずに軟化するこ
とになる。そのため、図４に示すようなピンホール６や
クラック７等の欠陥が発生し、また表面が粗くなる。The reason for this may be as follows. That is, in general, when an amorphous glass frit is heated until it reaches a softening temperature and the temperature is further increased, the viscosity gradually decreases and it becomes fluid. Therefore, in this case, by maintaining a sufficiently high temperature, it is easy to coat the surface of the metal core with glass. On the other hand, when the temperature of the crystalline glass frit is increased, the glass begins to crystallize as soon as it reaches the softening temperature, and as the temperature is further increased, the crystallization speed becomes faster and the viscosity becomes higher. go. Therefore, it will soften with almost no flow. Therefore, defects such as pinholes 6 and cracks 7 as shown in FIG. 4 occur, and the surface becomes rough.
【００１７】ところが、結晶性ガラスフリットに、非晶
質のガラスフリットを所定量混入した場合、溶融した非
晶質のガラスが、結晶性ガラスの欠陥を埋めて固化する
ために、表面が滑らかに、また、欠陥もなくなると言え
る。結晶性ガラスフリットは一度結晶化すると、再加熱
して軟化温度に達しても、軟化しないという特徴を有し
ており、このために耐熱性に優れているが、本発明のホ
ーローもこの特性を有している。However, when a predetermined amount of amorphous glass frit is mixed into crystalline glass frit, the molten amorphous glass fills the defects in the crystalline glass and solidifies, resulting in a smooth surface. , it can also be said that defects are eliminated. Once crystallized, crystalline glass frit has the characteristic that it does not soften even if it is reheated and reaches the softening temperature, and therefore has excellent heat resistance, and the enamel of the present invention also has this characteristic. have.
【００１８】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。Note that the present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００１９】[0019]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、結晶性ガラスフリットを使用しながらも、その
表面の粗さが小さく欠陥のないホーロー基板を得ること
ができるので、サーマルプリンタヘッドやハイブリッド
ＩＣなどに利用されるホーロー基板の製作が容易になり
、回路形成時の短絡等の不良もなくなる。As described in detail above, according to the present invention, it is possible to obtain a hollow substrate with small surface roughness and no defects even though crystalline glass frit is used. Enamel substrates used in printer heads, hybrid ICs, etc. can be manufactured easily, and defects such as short circuits during circuit formation are eliminated.
【００２０】更に、耐熱性、絶縁性、耐食性を必要とす
る製品、例えば、家庭用の鍋等にも応用することができ
る。Furthermore, it can also be applied to products that require heat resistance, insulation, and corrosion resistance, such as household pots.
【図１】本発明の実施例を示すホーロー基板の要部工程
を示す図である。FIG. 1 is a diagram illustrating the main steps of a hollow substrate according to an embodiment of the present invention.
【図２】本発明の実施例を示すホーロー基板の断面図で
ある。FIG. 2 is a sectional view of a hollow substrate showing an embodiment of the present invention.
【図３】本発明の工程で製作したホーロー基板のガラス
混入率とホーロー面の粗さの関係を示す図である。FIG. 3 is a diagram showing the relationship between the glass content ratio and the roughness of the enamel surface of the enamel substrate manufactured by the process of the present invention.
【図４】ホーロー基板のホーロー面の欠陥を示す断面図
である。FIG. 4 is a cross-sectional view showing defects on the enamel surface of the enamel substrate.
１ 金属コア ２ ホーロー層 ３ 溶媒 ４ ガラスフリット ４ａ 結晶性ガラスフリット ４ｂ 非晶質のガラスフリット ５ 電極 １０ 電着槽 １１ 直流電源 1 Metal core 2 Enamel layer 3 Solvent 4 Glass frit 4a Crystalline glass frit 4b Amorphous glass frit 5 Electrode 10 Electrodeposition bath 11 DC power supply
Claims (2)
子を重量比で２〜７％混入し、これを金属コアに塗布し
た後、焼成して金属コアの周囲をホーロー層で被覆する
ことを特徴とするホーロー基板。[Claim 1] Mixing 2 to 7% by weight of amorphous glass particles into crystalline glass particles, applying this to a metal core, and then firing it to cover the periphery of the metal core with an enamel layer. Enamel board featuring.
程と、（ｂ）結晶性ガラス粒子に非晶質のガラス粒子を
重量比で２〜７％混入したものを溶媒に加えて攪拌する
工程と、（ｃ）その液中に前記金属コアを浸し、電着す
る工程と、（ｄ）ガラス粒子が電着された金属コアを液
中から引き上げて乾燥する工程と、（ｅ）該金属コアを
加熱炉中で焼成する工程とを施すホーロー基板の製造方
法。Claim 2: (a) a step of nickel plating a metal core, and (b) adding a mixture of crystalline glass particles and amorphous glass particles of 2 to 7% by weight to a solvent and stirring. (c) immersing the metal core in the liquid and electrodepositing it; (d) lifting the metal core with the glass particles electrodeposited from the liquid and drying it; (e) the metal core. A method for manufacturing an enamel substrate, which includes the step of firing a core in a heating furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6159191A JPH04296087A (en) | 1991-03-26 | 1991-03-26 | Enameled board and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6159191A JPH04296087A (en) | 1991-03-26 | 1991-03-26 | Enameled board and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04296087A true JPH04296087A (en) | 1992-10-20 |
Family
ID=13175546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6159191A Withdrawn JPH04296087A (en) | 1991-03-26 | 1991-03-26 | Enameled board and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04296087A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109121423A (en) * | 2017-04-19 | 2019-01-01 | 新电元工业株式会社 | The manufacturing method of semiconductor device |
-
1991
- 1991-03-26 JP JP6159191A patent/JPH04296087A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109121423A (en) * | 2017-04-19 | 2019-01-01 | 新电元工业株式会社 | The manufacturing method of semiconductor device |
| CN109121423B (en) * | 2017-04-19 | 2020-05-19 | 新电元工业株式会社 | Method for manufacturing semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |