JPH02267286A - Enameled substrate - Google Patents
Enameled substrateInfo
- Publication number
- JPH02267286A JPH02267286A JP8622989A JP8622989A JPH02267286A JP H02267286 A JPH02267286 A JP H02267286A JP 8622989 A JP8622989 A JP 8622989A JP 8622989 A JP8622989 A JP 8622989A JP H02267286 A JPH02267286 A JP H02267286A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- glass
- hollow
- thermal head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 29
- 239000011247 coating layer Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 238000004070 electrodeposition Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000003980 solgel method Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract description 9
- 238000007747 plating Methods 0.000 abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 6
- 239000010935 stainless steel Substances 0.000 abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 3
- 210000003298 dental enamel Anatomy 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000005406 washing Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OBROYCQXICMORW-UHFFFAOYSA-N tripropoxyalumane Chemical compound [Al+3].CCC[O-].CCC[O-].CCC[O-] OBROYCQXICMORW-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、サーマルヘッド用基板等に用いるホーロ基板
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a hollow substrate used for a thermal head substrate or the like.
従来の技術
従来の技術として例えば特願昭Ｅ１１−２５２２１２号
に開示されているようなサーマルヘッド用絶縁ホーロ基
板を例に挙げ説明する。2. Description of the Related Art As a conventional technology, an insulating hollow substrate for a thermal head as disclosed in Japanese Patent Application No. E11-252212 will be described as an example.
このホーロ基板８ａは第２図に示すようにステンレス鋼
板１ａ上に電解ニッケルメッキ層２ａ１さらにホーロガ
ラス３ａを被覆した構成から成る。As shown in FIG. 2, this hollow substrate 8a has a structure in which a stainless steel plate 1a is coated with an electrolytic nickel plating layer 2a1 and a hollow glass 3a.
またこの基板８ａの製造方法としてはまず調製したガラ
スフリットをボールミルで粉砕し平均粒径が２〜３μｍ
の電気泳動電着（電着）用スラＩＪ−とし、このスラリ
ーにステンレス鋼板などの金属基材１ａを浸漬、対極と
金属基材１ａ間に直流電圧を印加して帯電したガラスフ
リット粒子を金属基材１ａ上に電着する。その後、充分
に乾燥後、焼成してサーマルヘッド用絶縁ホーロ基板８
ａとする。このような方法で形成したサーマルヘッド用
絶縁ホーロ基板８ａの表面粗度は、中心線平均粗さＲａ
で０．０５〜０．０８８ｍであり、従来のホーロ基板（
Ｒａ０．１５〜０．３μｍ）に比べて、平滑性に優れて
いる。In addition, as a manufacturing method for this substrate 8a, firstly, the prepared glass frit is ground in a ball mill so that the average particle size is 2 to 3 μm.
A metal substrate 1a such as a stainless steel plate is immersed in the slurry IJ- for electrophoretic electrodeposition (electrodeposition), and a DC voltage is applied between the counter electrode and the metal substrate 1a to transfer the charged glass frit particles to the metal. It is electrodeposited onto the base material 1a. After that, after sufficiently drying, the insulating hollow substrate 8 for the thermal head is fired.
Let it be a. The surface roughness of the thermal head insulating hollow substrate 8a formed by such a method is the center line average roughness Ra.
The distance is 0.05 to 0.088m, and the distance is 0.05 to 0.088m.
(Ra0.15 to 0.3 μm) has excellent smoothness.
発明が解決しようとする課題
上記構成のホーロ基板８ａの表面に厚膜印刷法あるいは
スパッタリング等の薄膜技術を用いて発熱抵抗体８ａｓ
電極５ａをパターン形成してサーマルヘッドの導電回
路を形成する際、ホーロ基板８ａの表面平滑性がいまだ
充分でないため精度の高いファインなパターン形成がで
きない。Problem to be Solved by the Invention The heating resistor 8as is formed on the surface of the hollow substrate 8a having the above structure using a thin film technique such as thick film printing or sputtering.
When patterning the electrodes 5a to form a conductive circuit of the thermal head, it is not possible to form a fine pattern with high accuracy because the surface smoothness of the hollow substrate 8a is still insufficient.
また発熱抵抗体６、電極５、あるいはオーバコート層７
を形成する場合、これらの構成材料とホーロ基板層とが
反応し良好な特性のサーマルヘッドができないという問
題があった。Also, the heating resistor 6, the electrode 5, or the overcoat layer 7
When forming a thermal head, there is a problem in that these constituent materials and the hollow substrate layer react with each other, making it impossible to form a thermal head with good characteristics.
課題を解決するための手段
上記課題を解決するために本発明は、金属基村上にホー
ロ層を形成し、さらにこのホーロ層の表面にガラスある
いはセラミックスから成る被覆層を形成した構成から成
ることを特徴とする。ガラスあるいはセラミックスから
成る被覆層はゾル−ゲル法を用いて形成されたものが前
記被服層は８１０ａ、Ａｌ９０ｇ、あるいはＭｇＯ−Ｂ
ｉＯｓ−８ＩＯ２からなるものが、ホーロ層は結晶化ガ
ラスからなるものが、又ホーロ層は電気泳動電着法を用
いて形成されたものが夫々好適である。Means for Solving the Problems In order to solve the above problems, the present invention comprises a structure in which a hollow layer is formed on a metal substrate, and a coating layer made of glass or ceramics is further formed on the surface of this hollow layer. Features. The coating layer made of glass or ceramics is formed using a sol-gel method.
It is preferable to use iOs-8IO2, the hollow layer to be formed from crystallized glass, and the hollow layer to be formed by electrophoretic electrodeposition.
作 用
本発明のホーロ基板は、金属基材にホーロ層を形成し、
さらにこのホーロ層の表面にガラスあるいはセラミック
スから成る被覆層を形成した構成から成るものであるの
で、前記被服層が表面滑性に優れ、かつ抵抗体、電極、
あるいはオーバコート層との反応を抑えることができ良
好な特性を得ることができる。Function The hollow substrate of the present invention forms a hollow layer on a metal base material,
Furthermore, since the structure is such that a coating layer made of glass or ceramics is formed on the surface of this hollow layer, the coating layer has excellent surface smoothness and is suitable for resistors, electrodes,
Alternatively, reaction with the overcoat layer can be suppressed and good characteristics can be obtained.
実施例 以下本発明の実施例について説明する。Example Examples of the present invention will be described below.
〈第１実施例〉
板上のステンレス金属基材１を脱脂・水洗・酸洗・水洗
・ニッケルメッキ拳水洗して前処理を行った後、平均粒
径が７μｍのガラス粒子とアルコール溶液とからなるス
ラリー中に浸漬して、対極と金属基材１間に直流電圧を
印加して第１表に示す組成の結晶性ガラス粒子を金属基
材１上に１５０μｍ電着した。その後、室温で乾燥し９
００℃で焼成してホーロ基板本体８を形成した。第１図
に示すようにこの基板本体８上に二酸化珪素から成る被
覆層４を４００ｎｍ形成しさらに図に示したような構成
のサーマルヘッドを形成した。第１図は本実施例のホー
ロ基板を用いたサーマルヘッドの断面図で、１は金属基
材、２はニッケルメッキ層、３はホーロ層、４はガラス
被覆層、５は電極、６は発熱抵抗体、７はオーバーコー
ト層である。〈First Example〉 After performing pretreatment by degreasing, washing with water, pickling, washing with water, and nickel plating, the stainless steel metal substrate 1 on a plate was treated with glass particles having an average particle size of 7 μm and an alcohol solution. A DC voltage was applied between the counter electrode and the metal substrate 1 to electrodeposit crystalline glass particles having a composition shown in Table 1 to a thickness of 150 μm on the metal substrate 1. Then, dry at room temperature.
The hollow substrate main body 8 was formed by firing at 00°C. As shown in FIG. 1, a coating layer 4 made of silicon dioxide was formed to a thickness of 400 nm on this substrate body 8, and a thermal head having the structure shown in the figure was further formed. FIG. 1 is a cross-sectional view of a thermal head using a hollow substrate of this embodiment, where 1 is a metal base material, 2 is a nickel plating layer, 3 is a hollow layer, 4 is a glass coating layer, 5 is an electrode, and 6 is a heat generating layer. The resistor 7 is an overcoat layer.
次にガラス被覆層４の形成方法について述べる。Next, a method for forming the glass coating layer 4 will be described.
まずテトラエトキシシラン、メタノール、水、そして加
水分解用触媒としての塩酸から成る混合液にホーロ基板
本体８を浸漬し、引っ張り速度１ｍｍ／１秒で引き上げ
た後、室温で乾燥、さらに１００゛Ｃで乾燥後、５００
℃で焼成する工程を３回繰り返すことにより４００ｎｍ
の二酸化珪素被膜層４を形成した。電極５、抵抗体６の
バターニング、エツチングも非常に良好でありガラス被
覆層４の無いのもと比ベパターンの精度が向上した。First, the hollow substrate body 8 was immersed in a mixed solution consisting of tetraethoxysilane, methanol, water, and hydrochloric acid as a hydrolysis catalyst, pulled up at a pulling speed of 1 mm/1 second, dried at room temperature, and then heated at 100°C. After drying, 500
400nm by repeating the process of firing at ℃ three times.
A silicon dioxide coating layer 4 was formed. The patterning and etching of the electrode 5 and the resistor 6 were also very good, and the precision of the pattern was improved compared to the case without the glass coating layer 4.
サーマルヘッドとしての特性は比較例の後にまとめて挙
げる。なお、テトラエトキシシランの替わりにアルミニ
ウムプロポキシドを用いて酸化アルミニウム被覆層を形
成してもほぼ二酸化珪素被膜と同等な特性が得られた。The characteristics as a thermal head are summarized after the comparative examples. Note that even when aluminum propoxide was used instead of tetraethoxysilane to form the aluminum oxide coating layer, properties almost equivalent to those of the silicon dioxide coating were obtained.
第１表
く第２実施例〉
第１実施例と同様な構成、方法を用いてホーロ基板本体
８を形成した。本実施例ではＭｇＯ−ｈ ０３−５１０
２系ガラス被覆層４を６００ｎｍ形成した。ガラス被覆
層４は、にｇＯ，ＢＯ，ＳＩＯの原料にそれぞれＭｇ（
ＯＥｔ）、Ｂ（０−ｒ＋Ｂｕ）、５ｌ（ＯＥｔ）を用い
た。上記金属アルコキシドとメタノール、水、そして加
水分解用触媒としての塩酸から成る混合液にホーロ基板
本体８を浸漬し、引っ張り速度１ｍｍ／１秒で引き上げ
た後、室温で乾燥、さらに１００℃で乾燥後、５００℃
で焼成する工程を３回繰り返すことにより８００ ｎｍ
のＭｇＯ−Ｂａ０ａ−５ｉｆｔ系ガラス被覆層４を形成
した。電極５、抵抗体６のパターニング、エツチングも
実施例１と同様非常に良好でありガラス被覆層４の無い
のもと比ベコアインなものができた。Second Example shown in Table 1> A hollow substrate main body 8 was formed using the same configuration and method as in the first example. In this example, MgO-h 03-510
A 2-type glass coating layer 4 was formed to a thickness of 600 nm. The glass coating layer 4 contains Mg (
OEt), B(0-r+Bu), and 5l(OEt) were used. The hollow substrate main body 8 was immersed in a mixed solution consisting of the metal alkoxide, methanol, water, and hydrochloric acid as a hydrolysis catalyst, pulled up at a pulling speed of 1 mm/1 second, dried at room temperature, and then dried at 100°C. ,500℃
800 nm by repeating the firing process three times.
A MgO-Ba0a-5ift glass coating layer 4 was formed. The patterning and etching of the electrode 5 and the resistor 6 were also very good as in Example 1, and compared to the original without the glass coating layer 4, a core-in structure was obtained.
〈実施例３〉
実施例１と同様な構成、方法を用いてホーロ基板本体８
を形成した。本実施例では第２表に示す組成の結晶性ガ
ラス粒子を金属基材１上に１５０μｍ電着した。その後
、室温で乾燥し８５０ ”Ｃで焼成してホーロ基板本体
８を形成した。ホーロ基板本体８上の被覆層４は実施例
１と同様第１図に示すように二酸化珪素から成る被覆層
４を４００ｎｍ形成し、さらに図に示したような構成の
サーマルヘッドを形成した。<Example 3> Using the same configuration and method as in Example 1, hollow substrate main body 8
was formed. In this example, crystalline glass particles having the composition shown in Table 2 were electrodeposited onto the metal substrate 1 to a thickness of 150 μm. Thereafter, the hollow substrate main body 8 was formed by drying at room temperature and firing at 850''C.The coating layer 4 on the hollow substrate main body 8 was made of silicon dioxide as shown in FIG. 1, as in Example 1. was formed to have a thickness of 400 nm, and a thermal head having the configuration shown in the figure was further formed.
第２表
〈比較例１〉
ステンレス金属基板を脱脂・水洗φ酸洗・水洗・ニッケ
ルメッキ−水洗して前処理を行った後、平均粒径が７μ
ｍのガラス粒子とアルコール溶液とからなるスラリー中
に浸漬して、対極と金属基板間に直流電圧を印加して第
１表組成の結晶性ガラス粒子を金属基板上に１５０ｕ、
ｍ電着した。その後、室温で乾燥し９００°Ｃで焼成し
てホーロ基板を形成した。第２図に示すようにこの基板
８ａ上に電極５、抵抗体６、オーバーコート層７を形成
しサーマルヘッドを試作した。Table 2 (Comparative Example 1) Stainless steel metal substrate was degreased, washed with water, φ pickled, washed with water, and nickel plated.After pretreatment by washing with water, the average particle size was 7μ.
The crystalline glass particles having the composition shown in Table 1 were placed on the metal substrate at 150 μm by immersing them in a slurry consisting of glass particles of m and an alcohol solution and applying a DC voltage between the counter electrode and the metal substrate.
m was electrodeposited. Thereafter, it was dried at room temperature and fired at 900°C to form a hollow substrate. As shown in FIG. 2, an electrode 5, a resistor 6, and an overcoat layer 7 were formed on this substrate 8a to fabricate a thermal head.
〈比較例２〉
ステンレス金属基板を脱脂・水洗−酸洗・水洗・ニッケ
ルメッキ拳水洗して前処理を行った後、平均粒径が７μ
ｍのガラス粒子とアルコール溶液とからなるスラリー中
に浸漬して、対極と金属基板間に直流電圧を印加して第
２表組成の結晶性ガラス粒子を金属基板上に１５０μｍ
電着した。その後、室温で乾燥し８５０℃で焼成してホ
ーロ基板を形成した。第２図に示すようにこの基板８ａ
上に電極５、抵抗体６、オーバーコート層７を形成シサ
ーマルヘッドを試作した。<Comparative Example 2> After pretreatment of a stainless steel metal substrate by degreasing, water washing, pickling, water washing, and nickel plating, the average particle size was 7 μm.
The crystalline glass particles having the composition shown in Table 2 were placed on the metal substrate with a thickness of 150 μm by immersing them in a slurry consisting of glass particles of m and an alcohol solution and applying a DC voltage between the counter electrode and the metal substrate.
Electrodeposited. Thereafter, it was dried at room temperature and fired at 850° C. to form a hollow substrate. As shown in FIG.
A shothermal head was fabricated by forming an electrode 5, a resistor 6, and an overcoat layer 7 thereon.
以上の実施例１〜３、比較例１〜２について、基板表面
上の中心線平均粗さＲａ１ サーマルヘッドの発熱抵抗
体の抵抗値バラツキ、サーマルヘッドの熱効率（ＯＤ
濃度１．０のときの１ドツト当りの消費電力）を測定し
、比較した。この結果を第３表、第４表、に示す。Regarding the above Examples 1 to 3 and Comparative Examples 1 to 2, the center line average roughness Ra1 on the substrate surface, the resistance value variation of the heating resistor of the thermal head, the thermal efficiency of the thermal head (OD
The power consumption per dot at a density of 1.0) was measured and compared. The results are shown in Tables 3 and 4.
第３表
第４表
本発明のホーロ基板は、上記のようなサーマルヘッドの
みならずその他の電気回路基板に広く応用することがで
きる。Table 3 Table 4 The hollow board of the present invention can be widely applied not only to the above-mentioned thermal head but also to other electric circuit boards.
発明の詳細
な説明したように本発明によれば従来より表面平滑性に
優れ、かつ電極、抵抗体と反応しない良好な特性を示す
ホーロ基板を得ることができ、このホーロ基板を用いる
ことにより良好な特性を示すサーマルヘッド等を作成す
ることができる。DETAILED DESCRIPTION OF THE INVENTION As described in detail, according to the present invention, it is possible to obtain a hollow substrate that has superior surface smoothness than the conventional one and exhibits good characteristics of not reacting with electrodes and resistors. It is possible to create thermal heads etc. that exhibit unique characteristics.
第１図は本発明の一実施例におけるホーロ基板を使用し
たサーマルヘッドの断面図、第２図は従来のホーロ基板
を使用したサーマルヘッドの断面図である。
１５１．金属基材、２０１．ニッケルメッキ層、３．。
、ホーロ層、４．、、ガラス（セラミックス）被覆層、
Ｓ８９．電極、８０１０発熱抵抗体、？、、、オーバー
コート層、８００．ホーロ基板本体。FIG. 1 is a sectional view of a thermal head using a hollow substrate according to an embodiment of the present invention, and FIG. 2 is a sectional view of a thermal head using a conventional hollow substrate. 151. Metal base material, 201. Nickel plating layer, 3. . , hollow layer, 4. , glass (ceramics) coating layer,
S89. Electrode, 8010 heating resistor, ? , , overcoat layer, 800. Hollow board body.
Claims (5)
ロ層の表面にガラスあるいはセラミックスから成る被覆
層を形成したことを特徴とするホーロ基板。(1) A hollow substrate characterized in that a hollow layer is formed on a metal base material, and a coating layer made of glass or ceramics is further formed on the surface of this hollow layer.
ル−ゲル法を用いて形成されたものであることを特徴と
する請求項１記載のホーロ基板。(2) The hollow substrate according to claim 1, wherein the coating layer made of glass or ceramics is formed using a sol-gel method.
ｉＯ＿２、Ａｌ＿２Ｏ＿３、あるいはＭｇＯ−Ｂ＿２Ｏ
＿３−ＳｉＯ＿２からなるものであることを特徴とする
請求項１記載のホーロ基板。(3) The coating layer made of glass or ceramics is S
iO_2, Al_2O_3, or MgO-B_2O
The hollow substrate according to claim 1, characterized in that it is made of _3-SiO_2.
る請求項１記載のホーロ基板。(4) The hollow substrate according to claim 1, wherein the hollow layer is made of crystallized glass.
のであることを特徴とする請求項１記載のホーロ基板。(5) The hollow substrate according to claim 1, wherein the hollow layer is formed using an electrophoretic electrodeposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8622989A JPH02267286A (en) | 1989-04-05 | 1989-04-05 | Enameled substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8622989A JPH02267286A (en) | 1989-04-05 | 1989-04-05 | Enameled substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02267286A true JPH02267286A (en) | 1990-11-01 |
Family
ID=13880963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8622989A Pending JPH02267286A (en) | 1989-04-05 | 1989-04-05 | Enameled substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02267286A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0658706A (en) * | 1992-08-13 | 1994-03-04 | Matsushita Electric Ind Co Ltd | Strain sensor |
| CN112877751A (en) * | 2021-01-06 | 2021-06-01 | 中国石油天然气集团有限公司 | Composite coating for inner surface of bent pipe for volume fracturing and preparation method and application thereof |
-
1989
- 1989-04-05 JP JP8622989A patent/JPH02267286A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0658706A (en) * | 1992-08-13 | 1994-03-04 | Matsushita Electric Ind Co Ltd | Strain sensor |
| CN112877751A (en) * | 2021-01-06 | 2021-06-01 | 中国石油天然气集团有限公司 | Composite coating for inner surface of bent pipe for volume fracturing and preparation method and application thereof |
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