JPH04296082A - Surface emitting type laser - Google Patents

Surface emitting type laser

Info

Publication number
JPH04296082A
JPH04296082A JP8772891A JP8772891A JPH04296082A JP H04296082 A JPH04296082 A JP H04296082A JP 8772891 A JP8772891 A JP 8772891A JP 8772891 A JP8772891 A JP 8772891A JP H04296082 A JPH04296082 A JP H04296082A
Authority
JP
Japan
Prior art keywords
surface emitting
active region
emitting laser
light
type laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8772891A
Other languages
Japanese (ja)
Inventor
Yoshihiro Kokubo
小久保 ▲吉▼裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8772891A priority Critical patent/JPH04296082A/en
Publication of JPH04296082A publication Critical patent/JPH04296082A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085Oblique facets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361Structure of the reflectors, e.g. hybrid mirrors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394Apertures, e.g. defined by the shape of the upper electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable a surface emitting type laser to be enhanced over two times as much in gain as a conventional one and lessened in oscillation threshold current. CONSTITUTION:A new active region 3B is additionally provided outside a conventional active region 3A, and a cone-shaped reflective plate 8 is provided so as to enable light rays to pass through the newly provided active region 3B, whereby a surface emitting type laser of this design can be enhanced in gain per pass.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、半導体レーザのうち
のいわゆる面発光レーザに関し、特にその利得の向上を
図ったものに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called surface emitting laser among semiconductor lasers, and particularly to a surface emitting laser whose gain is improved.

【0002】0002

【従来の技術】図6は従来の面発光レーザ装置を示す断
面図であり、図において、1A,1Bは電極、2はコン
タクト層、3Aは光取り出し窓と同一の平面形状を有す
る活性領域、4は光の進行方向、5は光取り出し窓で、
通常は円形に形成されている。6はクラッド、7は半導
体基板である。
2. Description of the Related Art FIG. 6 is a cross-sectional view showing a conventional surface emitting laser device. In the figure, 1A and 1B are electrodes, 2 is a contact layer, 3A is an active region having the same planar shape as a light extraction window; 4 is the traveling direction of the light, 5 is the light extraction window,
Usually shaped in a circle. 6 is a cladding, and 7 is a semiconductor substrate.

【0003】次に動作について説明する。電極1A,1
Bから注入された電子と正孔はコンタクト層2及び半導
体基板7を通って活性領域3Aで再結合する。このとき
活性領域3Aで発生、あるいは増幅された光は4の方向
に進行し、電極1B及び窓5で反射され装置内を何回も
往復する。
Next, the operation will be explained. Electrode 1A, 1
Electrons and holes injected from B pass through the contact layer 2 and the semiconductor substrate 7 and recombine in the active region 3A. At this time, the light generated or amplified in the active region 3A travels in the direction 4, is reflected by the electrode 1B and the window 5, and travels back and forth within the device many times.

【0004】このとき、コンタクト層2と半導体基板7
は光の吸収が小さい材料で構成されているので、光の進
行に対する全体の損失より活性領域3Aで発生する利得
が上回ることが可能なように設計されている。但し、発
振状態では利得と損失が釣り合う。また、活性領域3A
の厚さは通常キャリアの拡散長と同程度の2〜3μmで
ある。
At this time, the contact layer 2 and the semiconductor substrate 7
Since the active region 3A is made of a material with low light absorption, it is designed so that the gain generated in the active region 3A can exceed the overall loss to the light traveling. However, in the oscillation state, gain and loss are balanced. In addition, active area 3A
The thickness is usually 2 to 3 μm, which is about the same as the carrier diffusion length.

【0005】[0005]

【発明が解決しようとする課題】従来の面発光レーザは
以上のように構成されているので、活性層厚を厚くして
利得を増加させる方法は不可能(キャリアの拡散長より
厚くしても利得は増加しない)であり、発振しきい値を
通常のレーザなみに下げることは難しいという問題点が
あった。
[Problem to be solved by the invention] Since the conventional surface emitting laser is constructed as described above, it is impossible to increase the gain by increasing the thickness of the active layer (even if the thickness is thicker than the carrier diffusion length). The problem is that it is difficult to lower the oscillation threshold to the level of a normal laser.

【0006】この発明は上記のような問題点を解消する
ためになされたもので、光の利得を増加させ、発振しき
い値を下げることのできる面発光レーザを得ることを目
的とする。
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a surface emitting laser that can increase the optical gain and lower the oscillation threshold.

【0007】[0007]

【課題を解決するための手段】この発明に係る面発光レ
ーザは、光の経路に円錐状の反射板を設けるとともに光
取り出し窓の周辺に相当する領域に第2の活性層を設け
て、反射板による反射光がこの第2の活性層をも通過す
るようにしたものである。
[Means for Solving the Problems] A surface emitting laser according to the present invention is provided with a conical reflecting plate in the optical path and a second active layer in a region corresponding to the periphery of the light extraction window to provide a reflective surface. The light reflected by the plate also passes through this second active layer.

【0008】[0008]

【作用】この発明における反射板は、従来の活性領域の
周辺に設けられた第2の活性領域にも光を通過させるの
で、活性領域が等価的に厚くなり、利得を従来の2倍に
できる。
[Operation] The reflector in this invention also allows light to pass through the second active region provided around the conventional active region, so the active region becomes equivalently thicker and the gain can be doubled compared to the conventional one. .

【0009】[0009]

【実施例】以下、この発明の一実施例を図について説明
する。図1は本発明の面発光レーザの斜視図で、図2は
図1のA’−A”線を結ぶ線における断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of a surface emitting laser according to the present invention, and FIG. 2 is a sectional view taken along a line connecting line A'-A'' in FIG.

【0010】図1,図2において、3Bは第2の活性領
域、8は光の反射板である。その他同一符号は図6の従
来装置と同一または同等のものを示す。図2のような面
発光レーザにおいて、活性領域3Aで増幅された一方の
光は反射板8で反射し、第2の活性領域3Bで増幅され
ながら通過し、電極1Aで反射され、再び元の経路の逆
を通って光取り出し窓5で反射される。また光の一部は
光取り出し窓5を通過して外に出射される。
In FIGS. 1 and 2, 3B is a second active region, and 8 is a light reflecting plate. Other same reference numerals indicate the same or equivalent components as those of the conventional device shown in FIG. In the surface emitting laser as shown in FIG. 2, one of the lights amplified in the active region 3A is reflected by the reflector 8, passes through the second active region 3B while being amplified, is reflected by the electrode 1A, and returns to the original state again. The light passes through the opposite path and is reflected by the light extraction window 5. Further, a part of the light passes through the light extraction window 5 and is emitted to the outside.

【0011】このため、一往復した光は活性領域及び第
2の活性領域を通過することになり、従来の面発光レー
ザの約2倍の利得を得ることができる。従って、発振し
きい値も低減することができる。
[0011] Therefore, the light that has made one round trip passes through the active region and the second active region, and it is possible to obtain a gain approximately twice that of a conventional surface emitting laser. Therefore, the oscillation threshold can also be reduced.

【0012】なお、上記実施例では反射板8が電極1B
よりとびでた形状を有するものを示したが、図3のよう
に電極1Bの下側にあってもよく、上記実施例と同様の
効果を奏する。
[0012] In the above embodiment, the reflection plate 8 is connected to the electrode 1B.
Although a more protruding shape is shown, it may be located below the electrode 1B as shown in FIG. 3, and the same effect as in the above embodiment can be achieved.

【0013】また、上記実施例では反射板8を一組しか
用いていないが、図4のように多数組用いてもよい。
Further, although only one set of reflecting plates 8 is used in the above embodiment, multiple sets may be used as shown in FIG.

【0014】その他、電極1Bは反射板8に相当する部
分では形成されていないが、図5のように反射板8に相
当する部分を被うようにしてもよく、上記実施例と同様
の効果を奏する。
In addition, although the electrode 1B is not formed in the part corresponding to the reflection plate 8, it may be formed to cover the part corresponding to the reflection plate 8 as shown in FIG. 5, and the same effect as in the above embodiment can be obtained. play.

【0015】[0015]

【発明の効果】以上のように、この発明に係る面発光レ
ーザによれば、従来の活性領域の周辺にも活性領域を設
け、かつ反射板によって該周辺の活性領域にも光を通過
させるようにしたので、利得を従来の2倍にでき、発振
しきい値を下げられる効果がある。
As described above, according to the surface emitting laser according to the present invention, an active region is provided around the conventional active region, and light is also passed through the surrounding active region using a reflector. Therefore, the gain can be doubled compared to the conventional method, and the oscillation threshold can be lowered.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】この発明の一実施例による面発光レーザの斜視
図である。
FIG. 1 is a perspective view of a surface emitting laser according to an embodiment of the present invention.

【図2】この発明の一実施例による面発光レーザの断面
図である。
FIG. 2 is a sectional view of a surface emitting laser according to an embodiment of the present invention.

【図3】この発明の他の実施例による面発光レーザの断
面図である。
FIG. 3 is a sectional view of a surface emitting laser according to another embodiment of the invention.

【図4】この発明の他の実施例による面発光レーザの断
面図である。
FIG. 4 is a sectional view of a surface emitting laser according to another embodiment of the invention.

【図5】この発明の他の実施例による面発光レーザの断
面図である。
FIG. 5 is a cross-sectional view of a surface emitting laser according to another embodiment of the invention.

【図6】従来の面発光レーザを示す断面図である。FIG. 6 is a cross-sectional view showing a conventional surface emitting laser.

【符号の説明】[Explanation of symbols]

1A,1B  電極 2          コンタクト層 3A,3B  第1,第2の活性領域 4          光の進行方向 5          光取り出し窓 6          クラッド 7          半導体基板 8          光の反射板 1A, 1B electrode 2 Contact layer 3A, 3B First and second active regions 4. Direction of light travel 5. Light extraction window 6 Clad 7 Semiconductor substrate 8. Light reflecting plate

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  面発光レーザにおいて、共振器の一方
の反射板を2重以上の円錐形にし、かつ光取り出し窓の
下方に形成された第1の活性層の周辺第2の活性層を設
け、進行してきた光が上記反射鏡の円錐側面で2回以上
反射して、上記第1,第2の活性層全域を通過すること
を特徴とする面発光レーザ。
Claim 1: In a surface emitting laser, one of the reflectors of the resonator is made into a conical shape having two or more layers, and a second active layer is provided around the first active layer formed below the light extraction window. . A surface emitting laser, wherein the traveling light is reflected twice or more on the conical side surface of the reflecting mirror and passes through the entire area of the first and second active layers.
JP8772891A 1991-03-25 1991-03-25 Surface emitting type laser Pending JPH04296082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8772891A JPH04296082A (en) 1991-03-25 1991-03-25 Surface emitting type laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8772891A JPH04296082A (en) 1991-03-25 1991-03-25 Surface emitting type laser

Publications (1)

Publication Number Publication Date
JPH04296082A true JPH04296082A (en) 1992-10-20

Family

ID=13922979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8772891A Pending JPH04296082A (en) 1991-03-25 1991-03-25 Surface emitting type laser

Country Status (1)

Country Link
JP (1) JPH04296082A (en)

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