JPH04287020A - Active substrate - Google Patents

Active substrate

Info

Publication number
JPH04287020A
JPH04287020A JP3051264A JP5126491A JPH04287020A JP H04287020 A JPH04287020 A JP H04287020A JP 3051264 A JP3051264 A JP 3051264A JP 5126491 A JP5126491 A JP 5126491A JP H04287020 A JPH04287020 A JP H04287020A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
active
active devices
element region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3051264A
Other languages
Japanese (ja)
Inventor
Takashi Sato
尚 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP3051264A priority Critical patent/JPH04287020A/en
Publication of JPH04287020A publication Critical patent/JPH04287020A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obviate the generation of the electrostatic destruction of active devices successively provided with 1st electrodes, ferroelectric substance layers and 2nd electrodes on an insulating substrate at the time of a rubbing treatment by connecting the 2nd electrodes on the outside of the element regions where the active devices are integrated. CONSTITUTION:The island-shaped 1st electrodes 2 are provided on the insulating substrate 1 consisting of a glass substrate and the ferroelectric substance layers 3 consisting of a vinylidene fluoride/trifluoroethylene copolymer are so provided as to cover the 1st electrodes 2. The 2nd electrodes 4 consisting of Al are so provided as to cover a part of the 1st electrodes 2 via the ferroelectric substance layer 3. The 2nd electrodes 4 are used as the common electrodes to connect the active devices in a horizontal direction in the element region where the active devices are disposed in a matrix form. Plural pieces of the common electrodes exist and the common electrodes are used as bus lines. The 2nd electrodes 4 are respectively connected in the regions exclusive of the element region and a part thereof are so provided as to enclose the element region.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は液晶素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal device.

【0002】0002

【従来の技術】従来、ガラス基板からなる絶縁基板1上
にITOから成る第一の電極2が設けられ、第一の電極
2上にVDF/TrFE(フッ化ビニリデン/トリフル
オロエチレン)共重合体から成る強誘電体層3が第一の
電極2を覆うように設けられ、強誘電体層3を介し第一
の電極2の一部を覆う第二の電極4から成るアクティブ
デバイスを集積した素子領域を具備したアクティブ基板
において第二の電極を接続しないアクティブ基板が知ら
れていた。
[Prior Art] Conventionally, a first electrode 2 made of ITO was provided on an insulating substrate 1 made of a glass substrate, and a VDF/TrFE (vinylidene fluoride/trifluoroethylene) copolymer was provided on the first electrode 2. An element that integrates an active device consisting of a ferroelectric layer 3 which is provided to cover a first electrode 2, and a second electrode 4 which covers a part of the first electrode 2 through the ferroelectric layer 3. Active substrates have been known in which a second electrode is not connected to an active substrate having a region.

【0003】0003

【発明が解決しようとする課題】従来の技術に於いては
アクティブ基板をラビングする際に静電気が生じ、アク
ティブデバイスが電気的に破壊されるという課題を有し
ていた。
[0006] The conventional technique has had the problem that static electricity is generated when rubbing an active substrate, and the active device is electrically destroyed.

【0004】0004

【課題を解決するための手段】本発明のアクティブ基板
は絶縁基板上に設けられた島状の第一の電極、前記第一
の電極の少なくとも一部を覆うように設けられた強誘電
体層、前記強誘電体層を介し前記第一の電極の一部を覆
うように設けられた第二の電極を具備したアクティブデ
バイスを集積した素子領域を具備したアクティブ基板に
おいて前記第二の電極を前記素子領域以外の領域で接続
した事を特徴とする。
[Means for Solving the Problems] The active substrate of the present invention includes an island-shaped first electrode provided on an insulating substrate, and a ferroelectric layer provided to cover at least a portion of the first electrode. , in an active substrate having an element region integrating an active device having a second electrode provided so as to cover a part of the first electrode through the ferroelectric layer; The feature is that the connection is made in an area other than the element area.

【0005】[0005]

【実施例】図1は本発明のアクティブ基板に用いられる
アクティブデバイスの構成の一例を示す図である。図1
(a)は上視図であり、同図(b)は同図A−Aライン
に於ける断面図である。ガラス基板から成る絶縁基板1
上にITOから成る島状の第一の電極2が設けられてい
る。第一の電極2を覆うようにVDF/TrFE(フッ
化ビニリデン/トリフルオロエチレン)共重合体からな
る強誘電体層3が設けられている。強誘電体層3を介し
第一の電極2の一部を覆うようにAlから成る第二の電
極4が設けられている。アクティブデバイスの能動層は
第一と第二の電極2、4でサンドイッチ状に挟まれた強
誘電体層3である。このアクティブデバイスは絶縁基板
1上に第一の電極2を形成し、続いて強誘電体層3を形
成し、最後に第二の電極4を強誘電体層3上に形成する
ことにより形成される。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram showing an example of the structure of an active device used in an active substrate of the present invention. Figure 1
(a) is a top view, and (b) is a sectional view taken along the line A-A in the figure. Insulating substrate 1 made of glass substrate
An island-shaped first electrode 2 made of ITO is provided on top. A ferroelectric layer 3 made of a VDF/TrFE (vinylidene fluoride/trifluoroethylene) copolymer is provided so as to cover the first electrode 2 . A second electrode 4 made of Al is provided so as to partially cover the first electrode 2 with the ferroelectric layer 3 interposed therebetween. The active layer of the active device is a ferroelectric layer 3 sandwiched between first and second electrodes 2, 4. This active device is formed by forming a first electrode 2 on an insulating substrate 1, then forming a ferroelectric layer 3, and finally forming a second electrode 4 on the ferroelectric layer 3. Ru.

【0006】図2中に本発明にかかる第1のアクティブ
基板を示す。図2(a)は上視図、同図(b)は同図(
a)中A−Aラインにおける断面図である。図1に示し
たアクティブデバイスがマトリクス状に配置された素子
領域においては第二の電極4が各アクティブデバイスを
水平方向に接続する共通電極として用いられ、複数本の
共通電極が存在する。そして共通電極はバスラインとし
て用いられる。第二の電極4は素子領域以外の領域で各
々接続されその一部は素子領域を囲むように設けられて
いる。この第二の電極4の接続は第二の電極4を形成す
るのと同じ工程で形成されるため特別な工程を新たに用
いる必要はない。
FIG. 2 shows a first active substrate according to the present invention. FIG. 2(a) is a top view, and FIG. 2(b) is a top view (
a) It is a sectional view taken along the middle A-A line. In the element region shown in FIG. 1 where the active devices are arranged in a matrix, the second electrode 4 is used as a common electrode that horizontally connects the active devices, and there are a plurality of common electrodes. The common electrode is then used as a bus line. The second electrodes 4 are connected to each other in a region other than the device region, and a portion thereof is provided so as to surround the device region. Since the connection of the second electrode 4 is formed in the same process as forming the second electrode 4, there is no need to newly use a special process.

【0007】図2に示したアクティブ基板を液晶素子と
して用いる際は、少なくとも素子領域上にポリイミドか
らなる配向膜を形成し、その上をラビング処理する。ラ
ビング処理は配向膜上を脱脂綿等で物理的にこする処理
である。この時配向膜上に静電気が生じる。この静電気
によりアクティブデバイスの能動層に静電破壊が生じ、
アクティブデバイスが破壊されてしまう。これは各々の
第二の電極4が接続されていない際に特に顕著である。 静電破壊の頻度は湿度等によっても異なるが、第二の電
極4を接続していない際は平均約5%のアクティブデバ
イスが破壊された。それに対し、各々の第二の電極4を
接続した際は静電破壊を生じるものは0.0001%以
下に減少した。これは各々の第二の電極4を接続する事
により各アクティブデバイスに静電気により誘起される
電圧が平均、低減化された事によると考えられる。各々
の第二の電極4を接続しない際は、各々のアクティブデ
バイスに誘起される電圧が異なり、高い電圧が誘起され
たものが静電破壊されたのである。
When the active substrate shown in FIG. 2 is used as a liquid crystal element, an alignment film made of polyimide is formed at least on the element region, and then rubbed on the alignment film. The rubbing process is a process in which the alignment film is physically rubbed with absorbent cotton or the like. At this time, static electricity is generated on the alignment film. This static electricity causes electrostatic damage to the active layer of the active device.
The active device will be destroyed. This is particularly noticeable when the respective second electrodes 4 are not connected. Although the frequency of electrostatic damage varied depending on humidity and other factors, an average of about 5% of active devices were destroyed when the second electrode 4 was not connected. On the other hand, when the respective second electrodes 4 were connected, the amount of electrostatic damage caused was reduced to 0.0001% or less. This is considered to be because the voltage induced by static electricity in each active device is averaged and reduced by connecting each second electrode 4. When the respective second electrodes 4 were not connected, the voltages induced in each active device were different, and those in which a high voltage was induced were damaged by electrostatic discharge.

【0008】図2において、端子領域がアクティブ基板
上に存在する。素子領域からなるべく離れた端子領域に
おいて第二の電極4が接続されている。これは最終的に
アクティブ基板を用いた液晶素子を形成する際に第二の
電極4を切り離す必要があるからである。切り離す領域
を図2中に切り離し領域として示した。このように切り
離し領域を素子領域から離して(できれば端子領域の端
)設ける事により、限られたアクティブ基板の面積を有
効に活用する事ができる。
In FIG. 2, a terminal region is present on the active substrate. The second electrode 4 is connected in a terminal region as far away from the element region as possible. This is because it is necessary to separate the second electrode 4 when finally forming a liquid crystal element using an active substrate. The area to be separated is shown in FIG. 2 as a separation area. By providing the separation region apart from the element region (preferably at the end of the terminal region) in this manner, the limited area of the active substrate can be effectively utilized.

【0009】図2に於いて、絶縁基板1に用いられるの
はガラス基板に限る必要はなく有機絶縁材料を用いても
よい。第一の電極2、第二の電極4に用いるのはITO
やAlに限る必要はなく他の透明電極や金属、あるいは
超伝導材料を用いてもよい。強誘電体層3に用いるのは
VDFとTrFEとの共重合体に限る必要はなくBaT
iO3等の無機強誘電体やフッ化ビニリデンとテトラフ
ルオロエチレンとの共重合体等の有機強誘電体を用いて
もよい。配向膜としポリイミド以外の材料、例えばポリ
アミドやPVA、PDiPF等を用いても良い。又、配
向膜を用いずに強誘電体層3を直接ラビング処理しても
良い。
In FIG. 2, the insulating substrate 1 used is not limited to a glass substrate, and an organic insulating material may also be used. ITO is used for the first electrode 2 and second electrode 4.
It is not necessary to limit the electrode to Al or Al, and other transparent electrodes, metals, or superconducting materials may be used. It is not necessary to limit the copolymer of VDF and TrFE to be used for the ferroelectric layer 3;
An inorganic ferroelectric material such as iO3 or an organic ferroelectric material such as a copolymer of vinylidene fluoride and tetrafluoroethylene may be used. Materials other than polyimide, such as polyamide, PVA, PDiPF, etc., may be used as the alignment film. Alternatively, the ferroelectric layer 3 may be directly rubbed without using an alignment film.

【0010】図3中に本発明にかかる第2のアクティブ
基板を示す。図3(a)は上視図、同図(b)は同図(
a)中A−Aラインにおける断面図である。図1に示し
たアクティブデバイスがマトリクス状に配置された素子
領域においては第二の電極4が各アクティブデバイスを
水平方向に接続する共通電極として用いられ、複数本の
共通電極が存在する。そして共通電極はバスラインとし
て用いられる。第二の電極4は素子領域以外の領域で各
々接続されているが、その一部が素子領域を囲むように
設けられていない。図2と同様にこの第二の電極4の接
続は第二の電極4を形成するのと同じ工程で形成される
ため特別な工程を新たに用いる必要はない。図3におい
ても図2と同様にラビング処理時の静電破壊が生じにく
く、切り離し領域は素子領域から離れた位置に設けられ
ている。
FIG. 3 shows a second active substrate according to the present invention. Figure 3 (a) is a top view, and Figure 3 (b) is a top view (
a) It is a sectional view taken along the middle A-A line. In the element region shown in FIG. 1 where the active devices are arranged in a matrix, the second electrode 4 is used as a common electrode that horizontally connects the active devices, and there are a plurality of common electrodes. The common electrode is then used as a bus line. The second electrodes 4 are connected to each other in a region other than the device region, but a portion thereof is not provided so as to surround the device region. Similar to FIG. 2, the connection of the second electrode 4 is formed in the same process as forming the second electrode 4, so there is no need to use any special process. Similarly to FIG. 2, in FIG. 3, electrostatic damage during the rubbing process is less likely to occur, and the separation region is provided at a position away from the element region.

【0011】図3に於いて図2と同じ第一、第二の電極
2、4、絶縁基板1、強誘電体材料、配向膜やラビング
処理を用いてもよい。
In FIG. 3, the same first and second electrodes 2, 4, insulating substrate 1, ferroelectric material, alignment film, and rubbing treatment as in FIG. 2 may be used.

【0012】図2、3に第二の電極4を接続する構成の
一例を示したが、接続の構成はこれらに限る必要はなく
他の構成を用いても、第二の電極4が接続されていさえ
すれば良い。
Although FIGS. 2 and 3 show an example of a configuration for connecting the second electrode 4, the connection configuration is not limited to these, and other configurations may also be used to connect the second electrode 4. All you have to do is

【0013】図2、3は図1に示したアクティブデバイ
スを用いた例であるが、他の構成によるアクティブデバ
イスを用いた際はバスラインとして用いられる電極を各
々接続して用いれば良い。他の構成のアクティブデバイ
スの一例として図1の第一と第二の電極2、4の位置を
入れ換えたものが上げられる。
FIGS. 2 and 3 are examples using the active device shown in FIG. 1, but when using an active device with another configuration, the electrodes used as bus lines may be connected to each other. An example of an active device having another configuration is one in which the positions of the first and second electrodes 2 and 4 shown in FIG. 1 are reversed.

【0014】[0014]

【発明の効果】以上説明したように、本発明によりラビ
ング処理時に静電破壊が生じにくいアクティブ基板を得
る事ができる。
As explained above, the present invention makes it possible to obtain an active substrate that is less susceptible to electrostatic damage during rubbing treatment.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】アクティブデバイスを示す図である。FIG. 1 shows an active device.

【図2】本発明第一のアクティブ基板を示す図である。FIG. 2 is a diagram showing the first active substrate of the present invention.

【図3】本発明第二のアクティブ基板を示す図である。FIG. 3 is a diagram showing a second active substrate of the present invention.

【符号の説明】[Explanation of symbols]

1  絶縁基板 2  第一の電極 3  強誘電体層 4  第二の電極 21  切り離し領域 22  端子領域 23  素子領域 1 Insulating substrate 2 First electrode 3 Ferroelectric layer 4 Second electrode 21 Separation area 22 Terminal area 23 Element area

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板上に設けられた島状の第一の電極
、前記第一の電極の少なくとも一部を覆うように設けら
れた強誘電体層、前記強誘電体層を介し前記第一の電極
の一部を覆うように設けられた第二の電極を具備したア
クティブデバイスを集積した素子領域を具備したアクテ
ィブ基板において前記第二の電極を前記素子領域以外の
領域で接続した事を特徴とするアクティブ基板。
1. An island-shaped first electrode provided on an insulating substrate; a ferroelectric layer provided to cover at least a portion of the first electrode; In an active substrate having an element region in which active devices are integrated, the second electrode is provided with a second electrode provided so as to cover a part of the first electrode, and the second electrode is connected in a region other than the element region. Features an active board.
JP3051264A 1991-03-15 1991-03-15 Active substrate Pending JPH04287020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3051264A JPH04287020A (en) 1991-03-15 1991-03-15 Active substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3051264A JPH04287020A (en) 1991-03-15 1991-03-15 Active substrate

Publications (1)

Publication Number Publication Date
JPH04287020A true JPH04287020A (en) 1992-10-12

Family

ID=12882089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3051264A Pending JPH04287020A (en) 1991-03-15 1991-03-15 Active substrate

Country Status (1)

Country Link
JP (1) JPH04287020A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985690A (en) * 1995-01-30 1999-11-16 Nec Corporation Method of manufacturing contact image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985690A (en) * 1995-01-30 1999-11-16 Nec Corporation Method of manufacturing contact image sensor

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