JPH042557B2 - - Google Patents
Info
- Publication number
- JPH042557B2 JPH042557B2 JP7138085A JP7138085A JPH042557B2 JP H042557 B2 JPH042557 B2 JP H042557B2 JP 7138085 A JP7138085 A JP 7138085A JP 7138085 A JP7138085 A JP 7138085A JP H042557 B2 JPH042557 B2 JP H042557B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- silicon
- crystal
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen gas Chemical compound 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7138085A JPS61232298A (ja) | 1985-04-04 | 1985-04-04 | シリコン単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7138085A JPS61232298A (ja) | 1985-04-04 | 1985-04-04 | シリコン単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61232298A JPS61232298A (ja) | 1986-10-16 |
| JPH042557B2 true JPH042557B2 (zh) | 1992-01-20 |
Family
ID=13458838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7138085A Granted JPS61232298A (ja) | 1985-04-04 | 1985-04-04 | シリコン単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61232298A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6217659B1 (en) * | 1998-10-16 | 2001-04-17 | Air Products And Chemical, Inc. | Dynamic blending gas delivery system and method |
| CN103436953B (zh) * | 2013-08-27 | 2016-09-21 | 天津市环欧半导体材料技术有限公司 | 一种偏晶向重掺单晶的拉制方法 |
| JP7457486B2 (ja) * | 2019-11-15 | 2024-03-28 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
-
1985
- 1985-04-04 JP JP7138085A patent/JPS61232298A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61232298A (ja) | 1986-10-16 |
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