JPH04250621A - Semiconductor production apparatus - Google Patents

Abstract

PURPOSE:To improve a yield by decreasing the adhesion of foreign matter to a wafer surface through scattering of chips, etc., by the vertical movement of an electrode, etc., carrying a wafer of etched material. CONSTITUTION:In an apparatus for working an etched material 10 mounted on a lower electrode 9 by a pair of upper and lower electrodes 8, 9 arranged in a vacuum vessel 1, 2, an electrode cover 25 and a dustproof cover 26 of double wall structure are arranged between seals 12 and 13 arranged below the vertically moving lower electrode 9 and in the side peripheral part of the lower electrode and a labyrinth structure is formed between the dust-proof cover 26 and lower end of said electrode cover 25 and the protective cover 14 of said seal 13.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to suppressing dust generation in semiconductor manufacturing processes and improving product productivity.

0002

2. Description of the Related Art FIG. 4 is a sectional view showing a conventional semiconductor manufacturing apparatus. In the figure, 1 and 2 are upper and lower containers constituting the main body of the device, 3 is a seal provided between them, 4,
5 and 6 are covers removably attached to the inner surface of the upper container 1, 7 is a ring that holds this cover, 8 and 9 are upper and lower electrodes, 10 is a material to be etched (wafer), and 11 is a lower electrode 9. An electrode cover 12 is attached to the lower electrode 9 for positioning the material 10 to be etched; a telescopic metal bellows 12 is attached under the lower electrode 9 for sealing between the inside and the outside of the container; A metal seal for isolating only parts 8 and 9, 14 is this metal seal 1
3 is a cover that protects the seal portion, 15 and 16 are drive cylinders for vertically moving the metal seal 13, and 17 is a lower electrode 9.
18 is a pump for evacuating the inside of the container; 19 is a valve that isolates the pump 18 from the inside of the container; 20 is a lid used when placing the material to be etched 10 on the electrode 9; , 21 is a high frequency power supply, 22 is an electrode 9
an energizing board for supplying voltage from the high frequency power supply 21 to the
23 is a valve for introducing and shutting off etching gas into the vacuum container. Figure 5 is a detailed diagram of the electrode part in Figure 4.
In the figure, 24 is a seal attached to the metal seal 13.

Next, its operation will be explained. The lower electrode 9 is set to the initial standby position 9a indicated by the chain line, and the upper container 1
The material to be etched 10 is placed on the lower electrode 9 through the lid 20 attached to the holder. Next, the valve 19 is opened and the vacuum pump 18 is activated to bring the inside of the container into a vacuum state. Next, the electrode 9 is raised to the set position by the cylinder 17, and the metal seal 13 is moved upward by the cylinders 15 and 16, and the electrodes 8 and 9 are separated into the other parts of the container in the vacuum container. is opened and etching gas is introduced into the container from the electrode 8. Next, high-frequency power is applied to the other electrode 9 from the high-frequency power supply 21 via the current-carrying plate 22,
The material to be etched 10 is processed into an arbitrary shape while generating plasma discharge between the electrodes 8 and 9. At this time, processing waste from the material to be etched 10 is sucked into the vacuum pump 18 through the valve 19 and discharged to the outside. Note that the diffusion state of etching processing debris at this time is shown by arrows in FIG.

0004

[Problems to be Solved by the Invention] Conventional semiconductor manufacturing equipment is configured as described above, so that processing waste from the material to be etched adheres to the metal bellows and the inner surface of the container, and as the number of etching processes increases, processing Debris also accumulates, and each time the lower electrode and metal bellows move up and down, the machining debris flies up and adheres to the surface of the material to be etched. Furthermore, when cleaning the inside of the container to prevent adhesion to the material to be etched, it is necessary to disassemble each part, which is very time-consuming.

[0005] This invention was made to solve the above-mentioned problems, and it prevents processing debris from etching material from adhering to the metal bellows and the inside surface of the container, which is difficult to clean, and shortens the cleaning time. The purpose is to

[0006]

[Means for Solving the Problems] A semiconductor manufacturing apparatus according to the present invention is provided with an electrode cover attached to a lower electrode that moves up and down, with the outer periphery hanging down in a cylindrical shape, and a metal seal and a container at the bottom of the vacuum container. A dustproof cover with double cylindrical walls covering the bottom surface is installed.

[0007]

[Operation] In this invention, the labyrinth groove between the electrode cover and the dust-proof cover prevents processing waste from the material to be etched from entering the metal seal, and also prevents it from spreading to difficult-to-clean areas inside the container. Make it easier for processing waste to be discharged to the pump side.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the drawings. In FIGS. 1 and 2, 1 to 10 and 12 to 24 are the same as those shown in the prior art example, so their explanation will be omitted. Reference numeral 25 is an electrode cover attached around the lower electrode 9 to position the material to be etched 10 and to prevent etching debris from adhering to the metal bellows 12, and has a skirt portion 25a hanging downward. Further, 26 is a dustproof cover with a double wall structure, which is attached to the bottom surface of the lower container 2 in correspondence with the cover 25, and is used to prevent etching processing waste from adhering to the metal bellows 12, the metal seal 13, and the bottom surface of the container. . The dustproof cover 26, the electrode cover 25, and the protective cover 14 each form a labyrinth groove when assembled. 26a is a discharge port for processing waste, and 27 is a cover that prevents etching processing waste from adhering to the outer periphery of the electrode 8. Note that the electrode cover 25 and dustproof cover 26 are removable.

Next, the operation will be explained. The operation of the device is the same as the conventional technology, but the discharge state of processing waste from the material to be etched will be explained with reference to FIG. The metal bellows 12, the metal seal 13, and the vacuum container are prevented from going around to areas that are difficult to clean, and the dust is discharged from the outlet 26a of the dust cover 26 as shown by the arrow.

In the above embodiment, a cylindrical cover 27 was provided around the outer periphery of the electrode 8 to prevent the electrode 8 from adhering to the outer periphery, but as shown in FIG. 28 may be provided.

[0011]

[Effects of the Invention] As described above, according to the present invention, it is possible to suppress the diffusion of dust within the vacuum container, thereby suppressing the re-adhesion of dust to the material to be etched, improving product reliability and productivity. do.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a detailed cross-sectional view of the interior of the vacuum vessel in FIG. 1;

FIG. 3 is a sectional view of the inside of a vacuum container showing another embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a conventional semiconductor manufacturing apparatus.

FIG. 5 is a detailed sectional view of the interior of the vacuum vessel in FIG. 4;

[Explanation of symbols]

1, 2 Container 8 Upper electrode 9 Lower electrode 10 Material to be etched 12 Metal bellows 13 Metal seal 14 Protective cover 25 Electrode cover 26 Dustproof cover

Claims (1)

[Claims] Claim 1: A vacuum container has an upper electrode and a lower electrode movable up and down; a bellows and a rail movable up and down are disposed at the lower part of the lower electrode and its side periphery, respectively; In the device in which the material to be etched is placed on and processed, an electrode cover having a skirt portion hanging downward is attached to the lower electrode, and a double layer corresponding to the electrode cover is attached to cover the bottom surface of the container. A dustproof cover with a cylindrical wall is installed, a labyrinth structure is provided between the dustproof cover and the electrode cover, and a labyrinth structure is provided between the side seal protection cover and the dustproof cover is provided with a structure for discharging processing waste. Semiconductor manufacturing equipment with an exit.