JPH0424876B2 - - Google Patents
Info
- Publication number
- JPH0424876B2 JPH0424876B2 JP25320785A JP25320785A JPH0424876B2 JP H0424876 B2 JPH0424876 B2 JP H0424876B2 JP 25320785 A JP25320785 A JP 25320785A JP 25320785 A JP25320785 A JP 25320785A JP H0424876 B2 JPH0424876 B2 JP H0424876B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain region
- conductivity type
- impurity
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 230000005684 electric field Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25320785A JPS62112375A (ja) | 1985-11-12 | 1985-11-12 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25320785A JPS62112375A (ja) | 1985-11-12 | 1985-11-12 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62112375A JPS62112375A (ja) | 1987-05-23 |
| JPH0424876B2 true JPH0424876B2 (enExample) | 1992-04-28 |
Family
ID=17248042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25320785A Granted JPS62112375A (ja) | 1985-11-12 | 1985-11-12 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62112375A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975385A (en) * | 1990-04-06 | 1990-12-04 | Applied Materials, Inc. | Method of constructing lightly doped drain (LDD) integrated circuit structure |
| JPH10214964A (ja) * | 1997-01-30 | 1998-08-11 | Oki Electric Ind Co Ltd | Ｍｏｓｆｅｔ及びその製造方法 |
-
1985
- 1985-11-12 JP JP25320785A patent/JPS62112375A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62112375A (ja) | 1987-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |