JPH0423834B2 - - Google Patents

Info

Publication number
JPH0423834B2
JPH0423834B2 JP58038561A JP3856183A JPH0423834B2 JP H0423834 B2 JPH0423834 B2 JP H0423834B2 JP 58038561 A JP58038561 A JP 58038561A JP 3856183 A JP3856183 A JP 3856183A JP H0423834 B2 JPH0423834 B2 JP H0423834B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
thin film
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58038561A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59163871A (ja
Inventor
Yoshiharu Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58038561A priority Critical patent/JPS59163871A/ja
Publication of JPS59163871A publication Critical patent/JPS59163871A/ja
Publication of JPH0423834B2 publication Critical patent/JPH0423834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP58038561A 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ Granted JPS59163871A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58038561A JPS59163871A (ja) 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58038561A JPS59163871A (ja) 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59163871A JPS59163871A (ja) 1984-09-14
JPH0423834B2 true JPH0423834B2 (en, 2012) 1992-04-23

Family

ID=12528707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58038561A Granted JPS59163871A (ja) 1983-03-09 1983-03-09 ダブルゲ−ト型薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS59163871A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
JPH02109341A (ja) * 1988-10-19 1990-04-23 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
CN106873273B (zh) * 2017-02-23 2021-01-29 京东方科技集团股份有限公司 阵列基板及其分区驱动方法、显示模组和显示装置

Also Published As

Publication number Publication date
JPS59163871A (ja) 1984-09-14

Similar Documents

Publication Publication Date Title
US3890632A (en) Stabilized semiconductor devices and method of making same
EP0027184B1 (en) Sos structure and method of fabrication
TWI234283B (en) Novel field effect transistor and method of fabrication
US3514676A (en) Insulated gate complementary field effect transistors gate structure
US5693977A (en) N-channel field effect transistor including a thin-film fullerene
JPS5457875A (en) Semiconductor nonvolatile memory device
KR930017218A (ko) 박막전계효과 트랜지스터 및 그 제조방법
JPS56125868A (en) Thin-film semiconductor device
JPS6022497B2 (ja) 半導体装置
US6001675A (en) Method of forming a thin film transistor
JP3117563B2 (ja) ダイヤモンド薄膜電界効果トランジスタ
JPH0423834B2 (en, 2012)
JPH0451069B2 (en, 2012)
US6077732A (en) Method of forming a thin film transistor
US3919008A (en) Method of manufacturing MOS type semiconductor devices
JPS631072A (ja) 薄膜電界効果トランジスタ
JPH0512852B2 (en, 2012)
JP2568037B2 (ja) 液晶表示素子用アモルファスシリコン半導体装置
JPS6146990B2 (en, 2012)
JPH0367350B2 (en, 2012)
SU1762342A1 (ru) МДП-транзистор
JP2635950B2 (ja) 半導体装置の製造方法
JPS6117153B2 (en, 2012)
JPH0376590B2 (en, 2012)
JPS58122779A (ja) 電界効果型トランジスタ