JPH04237139A - Integrated circuit package - Google Patents

Integrated circuit package

Info

Publication number
JPH04237139A
JPH04237139A JP3020550A JP2055091A JPH04237139A JP H04237139 A JPH04237139 A JP H04237139A JP 3020550 A JP3020550 A JP 3020550A JP 2055091 A JP2055091 A JP 2055091A JP H04237139 A JPH04237139 A JP H04237139A
Authority
JP
Japan
Prior art keywords
integrated circuit
package
wire
circuit package
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3020550A
Other languages
Japanese (ja)
Inventor
Yutaka Matsumura
豊 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3020550A priority Critical patent/JPH04237139A/en
Publication of JPH04237139A publication Critical patent/JPH04237139A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To shut off automatically a current supply to an integrated circuit in the case an abnormal heat generation is generated by a method wherein in the case a current of a current value larger than a prescribed current value flows through a plurality of wires, a wire, which is formed of a material which is fused and disconnected, is included in the plurality of the wires and one part of this wire is stringed so as not to come into contact to a case body. CONSTITUTION:In the case a current of a current value larger than a prescribed current value flows through a plurality of wires, which are electrically connected to a plurality of electrodes which respectively correspond to a plurality of terminals of a semiconductor integrated circuit 2, a wire, which is formed of a material which is fused and disconnected, is included in the plurality of the wires. This wire, which is formed of a material which is fused and disconnected, is stringed so as not to come into contact to a case body 1. For example, when the temperature of an integrated circuit 2 rises by some cause and the temperature of a bonding wire 46 reaches 150 deg.C, the wire 46 which is functioned as a temperature fuse is disconnected and a current supply to the circuit 2 is stopped. Thereby, in the case an abnormal heat generation is generated, damage to peripheral equipments and accident, such as ignition or the like, can automatically be avoided.

Description

【発明の詳細な説明】[Detailed description of the invention]

【０００１】0001

【産業上の利用分野】本発明は、集積回路パッケージに
関する。より詳細には、本発明は、異常な温度上昇時の
障害に対処した新規な構成の集積回路パッケージに関す
る。FIELD OF THE INVENTION This invention relates to integrated circuit packages. More particularly, the present invention relates to an integrated circuit package with a novel configuration that addresses failures during abnormal temperature rises.

【０００２】0002

【従来の技術】近年、集積回路装置の高性能化に伴って
消費電力が増加し、また、高集積化によっても正常動作
時の発熱量が上昇している。さらに、何らかの不具合い
により集積回路の異常発熱が発生した場合には、その集
積回路のみの破壊にとどまらず、近傍に配置されている
素子類の破壊、発火等を含む重大事故を引き起こすこと
がある。2. Description of the Related Art In recent years, power consumption has increased as the performance of integrated circuit devices has improved, and the amount of heat generated during normal operation has also increased due to higher integration. Furthermore, if abnormal heat generation occurs in an integrated circuit due to some kind of malfunction, it may not only destroy the integrated circuit, but also cause serious accidents including destruction of nearby elements, ignition, etc. .

【０００３】上記の異常発熱による障害は、集積回路が
プラスチックモールドパッケージに搭載されている場合
特に問題になる。即ち、プラスチックモールドパッケー
ジは、通常エポキシ樹脂等のモールド樹脂が、パッケー
ジ内部の集積回路およびボンディングワイヤ等に密着し
ているため、集積回路の異常発熱により容易にパッケー
ジが変形したり、溶損したり、発火する。[0003] The above-mentioned failure due to abnormal heat generation becomes a particular problem when the integrated circuit is mounted in a plastic mold package. In other words, in plastic molded packages, the molding resin such as epoxy resin is usually in close contact with the integrated circuit and bonding wires inside the package, so the package can easily be deformed or melted due to abnormal heat generation of the integrated circuit. set a fire.

【０００４】0004

【発明が解決しようとする課題】上記の障害の一部は、
パッケージの材質をプラスチックから熱に強いセラミッ
ク等に変更することである程度解決できる。しかしなが
ら、セラミックパッケージは高価であり、コストが上昇
する。また、異常発熱した集積回路パッケージの近傍に
配置された他の素子、集積回路等が損傷を受けることを
防ぐことはできない。さらに、異常発熱した集積回路パ
ッケージの近傍の基板、素子が出火することも考えられ
る。[Problem to be solved by the invention] Some of the above obstacles are:
This problem can be solved to some extent by changing the material of the package from plastic to heat-resistant ceramic. However, ceramic packages are expensive, increasing costs. Furthermore, it is not possible to prevent damage to other elements, integrated circuits, etc. placed in the vicinity of the integrated circuit package that has generated abnormal heat. Furthermore, it is conceivable that a board or element near the integrated circuit package that has abnormally generated heat may catch fire.

【０００５】そこで、本発明の目的は、上記従来技術の
問題点を解決し、異常発熱が発生した場合に集積回路へ
の電流供給を自動的に遮断する機能を有する新規な集積
回路パッケージの構成を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a novel integrated circuit package structure having a function of automatically cutting off the current supply to the integrated circuit when abnormal heat generation occurs. Our goal is to provide the following.

【０００６】[0006]

【課題を解決するための手段】本発明に従うと、複数の
端子を具備する半導体集積回路と、前記半導体集積回路
を収容する筐体と、前記筐体に取りつけられた前記筐体
外部と前記筐体内部とを電気的に接続する複数の電極と
、前記半導体集積回路の複数の端子をそれぞれ対応する
前記複数の電極に電気的に接続する複数のワイヤとを具
備する集積回路パッケージにおいて、前記複数のワイヤ
のうちに、所定の電流値よりも大きい電流が流れた場合
に、溶融、断線する材料で構成されているワイヤが含ま
れ、該溶融、断線する材料で構成されたワイヤが、少な
くとも一部は前記筐体に接触しないよう架線されている
ことを特徴とする集積回路パッケージが提供される。[Means for Solving the Problems] According to the present invention, there is provided a semiconductor integrated circuit having a plurality of terminals, a casing housing the semiconductor integrated circuit, an external part of the casing attached to the casing, and a casing housing the semiconductor integrated circuit. An integrated circuit package comprising a plurality of electrodes that electrically connect to the inside of a body, and a plurality of wires that electrically connect a plurality of terminals of the semiconductor integrated circuit to the corresponding plurality of electrodes. The wires include wires made of a material that melts and breaks when a current larger than a predetermined current value flows, and at least one wire made of a material that melts and breaks. There is provided an integrated circuit package characterized in that the part is wired so as not to come into contact with the casing.

【０００７】上記本発明の集積回路パッケージの構成は
、プラスチックモールドパッケージに適用すると効果的
であり、上記本発明の集積回路パッケージにおいては、
最も大きい値の電流が流れるワイヤが、前記溶融、断線
する材料で構成されていることが好ましく、また、前記
集積回路に電源電流を供給するワイヤが前記溶融、断線
する材料で構成されていることが好ましい。The structure of the integrated circuit package of the present invention is effective when applied to a plastic mold package, and the integrated circuit package of the present invention has the following features:
It is preferable that the wire through which the largest current flows is made of the material that melts and breaks, and the wire that supplies the power supply current to the integrated circuit is made of the material that melts and breaks. is preferred.

【０００８】[0008]

【作用】本発明の集積回路パッケージは、集積回路の端
子と一般にリードピンである電極とを接続するボンディ
ングワイヤの少なくとも１本が温度ヒューズとなってお
り、この温度ヒューズになっているボンディングワイヤ
が筐体に接触しないよう架線されているところにその主
要な特徴がある。即ち、本発明の集積回路パッケージで
は、何らかの原因で集積回路が異常発熱した場合、ただ
ちに温度ヒューズになっているボンディングワイヤが溶
断して電流を遮断する。従って、パッケージの変形、溶
損、発火等の障害を防ぐことが可能である。[Function] In the integrated circuit package of the present invention, at least one of the bonding wires connecting the terminal of the integrated circuit and the electrode, which is generally a lead pin, is a thermal fuse, and the bonding wire serving as the thermal fuse is connected to the housing. Its main feature is that the overhead wires do not come into contact with the body. That is, in the integrated circuit package of the present invention, if the integrated circuit abnormally heats up for some reason, the bonding wire serving as a thermal fuse immediately blows to cut off the current. Therefore, it is possible to prevent problems such as deformation of the package, melting and damage, and fire.

【０００９】本発明の集積回路パッケージでは、上記の
温度ヒューズになっているボンディングワイヤの少なく
とも一部は筐体に接触せずに架線されていなければなら
ない。これは、プラスチックモールドパッケージの場合
には、異常発熱時にボンディングワイヤが溶断するまで
の間にパッケージが加熱されて変形する恐れがあるから
である。また、セラミックパッケージの場合には、ボン
ディングワイヤの熱がパッケージに逃げてなかなか溶断
が起こらず、本発明の意図する効果が得られない場合が
考えられるからである。[0009] In the integrated circuit package of the present invention, at least a part of the bonding wire serving as the above-mentioned thermal fuse must be wired without contacting the casing. This is because in the case of a plastic molded package, there is a risk that the package will be heated and deformed before the bonding wire melts when abnormal heat is generated. In addition, in the case of a ceramic package, the heat of the bonding wire escapes into the package, making it difficult for the package to melt and break, which may prevent the intended effects of the present invention from being obtained.

【００１０】本発明の集積回路パッケージは、上記の集
積回路の端子と電極とを接続するボンディングワイヤの
うち、最大の電流が流れるボンディングワイヤが上記の
温度ヒューズになっていることが好ましい。これは、一
般的に最大の電流が流れるボンディングワイヤが最も高
温になるためで、異常発熱が起こった時に最初に溶断す
ることが好ましいからである。In the integrated circuit package of the present invention, it is preferable that among the bonding wires connecting the terminals and electrodes of the integrated circuit, the bonding wire through which the largest current flows is the thermal fuse. This is because the bonding wire through which the maximum current generally flows reaches the highest temperature, and it is preferable that it be the first to melt when abnormal heat generation occurs.

【００１１】また、本発明の集積回路パッケージは、上
記の集積回路の端子と電極とを接続するボンディングワ
イヤのうち、集積回路へ電源電流を供給するボンディン
グワイヤが上記の温度ヒューズになっていることも好ま
しい。この構成によれば、異常発熱時に集積回路への電
源電流が遮断されるので、被害を最小限に抑えることが
できる。Further, in the integrated circuit package of the present invention, among the bonding wires that connect the terminals and electrodes of the integrated circuit, the bonding wire that supplies a power supply current to the integrated circuit is the thermal fuse described above. is also preferable. According to this configuration, the power supply current to the integrated circuit is cut off when abnormal heat generation occurs, so that damage can be minimized.

【００１２】本発明の集積回路パッケージにおいて、上
記の温度ヒューズとなっているワイヤには、通常の温度
ヒューズで使用されるＰｂ、Ｚｎ、Ｓｂ、Ｓｎ等を含む
合金が使用可能である。また、溶断温度は集積回路パッ
ケージの使用環境により多少異なるが、例えばプラスチ
ックモールドパッケージの場合には、周囲のモールド樹
脂が加熱され軟化してパッケージが大きく変形しない１
５０　℃程度が好ましい。In the integrated circuit package of the present invention, alloys containing Pb, Zn, Sb, Sn, etc., which are used in ordinary thermal fuses, can be used for the wire serving as the thermal fuse. In addition, the fusing temperature varies somewhat depending on the usage environment of the integrated circuit package, but in the case of a plastic mold package, for example, the surrounding mold resin is heated and softened so that the package does not deform significantly.
The temperature is preferably about 50°C.

【００１３】以下、本発明を実施例によりさらに詳しく
説明するが、以下の開示は本発明の単なる実施例に過ぎ
ず、本発明の技術的範囲をなんら制限するものではない
。[0013] The present invention will be explained in more detail with reference to examples below. However, the following disclosure is merely an example of the present invention and is not intended to limit the technical scope of the present invention in any way.

【００１４】[0014]

【実施例】図１に、本発明の集積回路パッケージの一例
の一部切り欠き図を示す。図１の集積回路パッケージは
プラスチックモールドパッケージであり、エポキシ樹脂
製の筐体１と、筐体１の内部に固定された集積回路２と
、筐体１の側面を貫通して取りつけられている複数のリ
ードピン３１〜３８とを具備する。集積回路２は複数の
端子２１〜２８を具備し、各端子はボンディングワイヤ
４１〜４８で対応するリードピンに電気的に接続されて
いる。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a partially cutaway view of an example of an integrated circuit package according to the present invention. The integrated circuit package shown in FIG. 1 is a plastic mold package, and includes a housing 1 made of epoxy resin, an integrated circuit 2 fixed inside the housing 1, and a plurality of integrated circuits mounted through the side surface of the housing 1. The lead pins 31 to 38 are provided. The integrated circuit 2 includes a plurality of terminals 21-28, and each terminal is electrically connected to a corresponding lead pin by a bonding wire 41-48.

【００１５】上記本実施例の集積回路パッケージでは、
集積回路２の電源端子は端子２６であり、端子２６とリ
ードピン３６とを接続しているボンディングワイヤ４６
が１５０　℃で溶断する温度ヒューズになっている。ま
た、筐体１の、ボンディングワイヤ４６の周囲は中空に
なっており、ボンディングワイヤ４６は、筐体１と接触
していない。In the integrated circuit package of the above embodiment,
The power supply terminal of the integrated circuit 2 is the terminal 26, and the bonding wire 46 connects the terminal 26 and the lead pin 36.
It is a thermal fuse that melts at 150°C. Further, the area around the bonding wire 46 in the housing 1 is hollow, and the bonding wire 46 is not in contact with the housing 1.

【００１６】上記のプラスチックモールドパッケージの
筐体１は、上述のようにボンディングワイヤ４６の周囲
の部分が中空であるが、図３を参照して上記のプラスチ
ックモールドパッケージを作製する方法を説明する。最
初に、リードフレーム３上に集積回路２を固定し、対応
する端子とリードピンとをボンディングワイヤで接続す
る。接続が終了したら、図３（ａ）に示すよう周囲を中
空にする温度ヒューズのボンディングワイヤ４２をＪＣ
Ｌ（ジャンクション・コーティング・レジン）１２で被
覆する。次に、上記のように一部のボンディングワイヤ
に被覆を行ったリードフレーム３を、図３（ｂ）に示す
ようエポキシ樹脂等でモールドして筐体１を形成する。 図３（ｃ）に示すよう筐体１の下側にリードフレーム３
を避けて孔１３を空け、ＪＣＬ１２を吸引してボンディ
ングワイヤ４２の周囲を中空にする。最後に図３（ｄ）
に示すよう孔１３をエポキシ樹脂１４で塞いで本発明の
構成のプラスチックモールドパッケージが完成する。The housing 1 of the plastic mold package described above is hollow in the area around the bonding wire 46 as described above, and a method for manufacturing the plastic mold package will be described with reference to FIG. First, the integrated circuit 2 is fixed on the lead frame 3, and corresponding terminals and lead pins are connected with bonding wires. After the connection is completed, connect the bonding wire 42 of the thermal fuse with a hollow periphery to the JC as shown in Fig. 3(a).
Coat with L (junction coating resin) 12. Next, the lead frame 3 with some of the bonding wires covered as described above is molded with epoxy resin or the like to form the casing 1, as shown in FIG. 3(b). As shown in FIG. 3(c), a lead frame 3 is attached to the bottom of the housing 1.
The hole 13 is made while avoiding this, and the JCL 12 is sucked to make the area around the bonding wire 42 hollow. Finally, Figure 3(d)
As shown in FIG. 2, the hole 13 is closed with an epoxy resin 14 to complete the plastic mold package having the structure of the present invention.

【００１７】図４に、本発明の集積回路パッケージの他
の構成例の一部切り欠き図を示す。図４の集積回路パッ
ケージは、中空プラスチックタイプの集積回路パッケー
ジであり、エポキシ樹脂製のパッケージ本体１１と、パ
ッケージ本体１１のほぼ中央部に固定された集積回路２
と、パッケージ本体１１の両側面に配列されたリードピ
ン３１〜３８とを具備する。パッケージ本体１１には、
やはりエポキシ樹脂製のキャップ１０が封着されており
、内部は気密に保たれている。集積回路２は、図１の集
積回路パッケージのものと同様、複数の端子２１〜２８
を具備し、各端子はボンディングワイヤ４１〜４８で対
応するリードピンに電気的に接続されている。ボンディ
ングワイヤ４１〜４８は、キャップ１０およびパッケー
ジ本体１１のいずれにも接触しないよう架線されている
。FIG. 4 shows a partially cutaway diagram of another example of the structure of the integrated circuit package of the present invention. The integrated circuit package shown in FIG. 4 is a hollow plastic type integrated circuit package, and includes a package body 11 made of epoxy resin and an integrated circuit 2 fixed approximately in the center of the package body 11.
and lead pins 31 to 38 arranged on both sides of the package body 11. In the package body 11,
A cap 10 made of epoxy resin is also sealed to keep the inside airtight. Integrated circuit 2 includes a plurality of terminals 21-28 similar to those of the integrated circuit package of FIG.
Each terminal is electrically connected to a corresponding lead pin by bonding wires 41 to 48. The bonding wires 41 to 48 are wired so as not to contact either the cap 10 or the package body 11.

【００１８】図４の集積回路パッケージにおいても、集
積回路２の電源端子は端子２６であり、端子２６とリー
ドピン３６とを接続しているボンディングワイヤ４６が
１５０　℃で溶断する温度ヒューズになっている。また
、集積回路２のグランド端子は端子２２であり、図４の
集積回路パッケージでは、端子２２とリードピン３２と
を接続するボンディングワイヤ４２も１５０　℃で溶断
する温度ヒューズになっている。In the integrated circuit package shown in FIG. 4 as well, the power supply terminal of the integrated circuit 2 is the terminal 26, and the bonding wire 46 connecting the terminal 26 and the lead pin 36 serves as a thermal fuse that melts at 150°C. . Further, the ground terminal of the integrated circuit 2 is the terminal 22, and in the integrated circuit package of FIG. 4, the bonding wire 42 connecting the terminal 22 and the lead pin 32 is also a thermal fuse that melts at 150°C.

【００１９】図２および図５を参照して、上記本発明の
集積回路パッケージの集積回路２が異常発熱を起こした
場合の本発明の集積回路パッケージの動作を説明する。 図２は図１の集積回路パッケージの矢印Ａ方向から見た
断面図であり、図５は図４の集積回路パッケージの矢印
Ａ方向から見た断面図である。図２（ａ）および図５（
ａ）は、集積回路２が正常に動作している状態を示して
おり、ボンディングワイヤ４１〜４８が、それぞれ対応
している端子２１〜２８とリードピン３１〜３８とを接
続している。The operation of the integrated circuit package of the present invention when the integrated circuit 2 of the integrated circuit package of the present invention generates abnormal heat will be described with reference to FIGS. 2 and 5. 2 is a cross-sectional view of the integrated circuit package of FIG. 1 as viewed from the direction of arrow A, and FIG. 5 is a cross-sectional view of the integrated circuit package of FIG. 4 as viewed from the direction of arrow A. Figures 2(a) and 5(
A) shows a state in which the integrated circuit 2 is operating normally, and bonding wires 41 to 48 connect the corresponding terminals 21 to 28 and lead pins 31 to 38, respectively.

【００２０】これらの集積回路パッケージにおいて、何
らかの原因で温度が上昇し、ボンディングワイヤ４２、
４６の温度が１５０　℃に達すると、図２（ｂ）および
図５（ｂ）に示すよう、温度ヒューズになっているボン
ディングワイヤ４２および４６が断線し、集積回路２へ
の電流供給が断たれ、集積回路パッケージの温度がそれ
以上上昇することはない。従って、図１のプラスチック
モールドパッケージの筐体１、図４の中空プラスチック
タイプの集積回路パッケージの本体１１が溶融したり、
発火することを有効に防止する。In these integrated circuit packages, the temperature rises for some reason and the bonding wires 42,
When the temperature of the integrated circuit 46 reaches 150°C, the bonding wires 42 and 46, which serve as thermal fuses, are disconnected, cutting off the current supply to the integrated circuit 2, as shown in FIGS. 2(b) and 5(b). , the temperature of the integrated circuit package will not increase further. Therefore, the housing 1 of the plastic molded package in FIG. 1 and the main body 11 of the hollow plastic type integrated circuit package in FIG. 4 may melt.
Effectively prevents ignition.

【００２１】また、図４の集積回路パッケージにおいて
、キャップ１０を本体１１から取外しが可能なように封
着し、温度ヒューズになっているボンディングワイヤ４
２、４６の溶断温度を集積回路２が破壊されない温度に
設定することにより、異常発熱が起きた場合でも、ボン
ディングワイヤ４２、４６をつなぎ直して集積回路を繰
り返し使用することができる。In the integrated circuit package shown in FIG. 4, the cap 10 is removably sealed to the main body 11, and the bonding wire 4 serving as a thermal fuse is attached.
By setting the melting temperatures of 2 and 46 at a temperature that does not destroy the integrated circuit 2, even if abnormal heat generation occurs, the integrated circuit can be used repeatedly by reconnecting the bonding wires 42 and 46.

【００２２】[0022]

【発明の効果】以上説明したように、本発明に係る集積
回路パッケージは、異常発熱が発生した場合に、集積回
路への電流供給を自動的に遮断する機能を有する。従っ
て、プラスチック製のパッケージに使用した場合には、
異常発熱により、プラスチックパッケージの変形、溶融
および発火等を防ぐことができる。また、セラミック製
のパッケージに使用した場合でも、基板や周辺機器の深
刻な損傷、発火等の事故を回避できる。As described above, the integrated circuit package according to the present invention has a function of automatically cutting off the current supply to the integrated circuit when abnormal heat generation occurs. Therefore, when used in plastic packaging,
It is possible to prevent the plastic package from deforming, melting, catching fire, etc. due to abnormal heat generation. Furthermore, even when used in a ceramic package, accidents such as serious damage to circuit boards and peripheral devices, and fire can be avoided.

【図面の簡単な説明】[Brief explanation of the drawing]

【図１】本発明の集積回路パッケージの一例の一部切り
欠き図である。FIG. 1 is a partially cutaway view of an example of an integrated circuit package of the present invention.

【図２】図１に示した集積回路パッケージの動作を説明
する図である。FIG. 2 is a diagram explaining the operation of the integrated circuit package shown in FIG. 1;

【図３】図１に示した集積回路パッケージの作製方法の
工程を示す概略図である。FIG. 3 is a schematic diagram showing the steps of the method for manufacturing the integrated circuit package shown in FIG. 1;

【図４】本発明の集積回路パッケージの他の例の一部切
り欠き図である。FIG. 4 is a partially cutaway view of another example of the integrated circuit package of the present invention.

【図５】図４に示した集積回路パッケージの動作を説明
する図である。FIG. 5 is a diagram illustrating the operation of the integrated circuit package shown in FIG. 4;

【符号の説明】[Explanation of symbols]

１　　　　筐体 ２　　　　集積回路 １０　　　　キャップ １１　　　　本体 ２１〜２８　　　　端子 ３１〜３８　　　　リードピン 1 Housing 2 Integrated circuit 10 Cap 11 Main body 21-28 Terminal 31-38 Lead pin

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】　　複数の端子を具備する半導体集積回路
と、前記半導体集積回路を収容する筐体と、前記筐体に
取りつけられた前記筐体外部と前記筐体内部とを電気的
に接続する複数の電極と、前記半導体集積回路の複数の
端子をそれぞれ対応する前記複数の電極に電気的に接続
する複数のワイヤとを具備する集積回路パッケージにお
いて、前記複数のワイヤのうちに、所定の電流値よりも
大きい電流が流れた場合に、溶融、断線する材料で構成
されているワイヤが含まれ、該溶融、断線する材料で構
成されたワイヤが、少なくとも一部は前記筐体に接触し
ないよう架線されていることを特徴とする集積回路パッ
ケージ。1. A semiconductor integrated circuit having a plurality of terminals, a casing housing the semiconductor integrated circuit, and an electrical connection between the outside of the casing attached to the casing and the inside of the casing. In an integrated circuit package comprising a plurality of electrodes and a plurality of wires electrically connecting a plurality of terminals of the semiconductor integrated circuit to the corresponding plurality of electrodes, one of the plurality of wires has a predetermined current. A wire made of a material that melts and breaks when a current larger than the value flows is included, and at least a portion of the wire made of the material that melts and breaks the wire does not come into contact with the casing. An integrated circuit package characterized by being wired. 【請求項２】　　前記集積回路パッケージが、プラスチ
ックモールドパッケージであることを特徴とする請求項
１に記載の集積回路パッケージ。2. The integrated circuit package of claim 1, wherein the integrated circuit package is a plastic mold package. 【請求項３】　　前記複数のワイヤのうちで最大の電流
を流すワイヤが、前記溶融、断線する材料で構成されて
いることを特徴とする請求項１または請求項２に記載の
集積回路パッケージ。3. The integrated circuit package according to claim 1, wherein the wire through which the largest current flows among the plurality of wires is made of the material that melts and breaks. 【請求項４】　　前記半導体集積回路に電源電流を供給
するワイヤが、前記溶融、断線する材料で構成されてい
ることを特徴とする請求項１〜請求項３のいずれか１項
に記載の集積回路パッケージ。4. The integrated circuit according to claim 1, wherein the wire for supplying power supply current to the semiconductor integrated circuit is made of the material that melts and breaks. circuit package.
JP3020550A 1991-01-21 1991-01-21 Integrated circuit package Withdrawn JPH04237139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3020550A JPH04237139A (en) 1991-01-21 1991-01-21 Integrated circuit package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3020550A JPH04237139A (en) 1991-01-21 1991-01-21 Integrated circuit package

Publications (1)

Publication Number Publication Date
JPH04237139A true JPH04237139A (en) 1992-08-25

Family

ID=12030261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3020550A Withdrawn JPH04237139A (en) 1991-01-21 1991-01-21 Integrated circuit package

Country Status (1)

Country Link
JP (1) JPH04237139A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162221A (en) * 1995-12-13 1997-06-20 Nec Corp Resin encapsulated semiconductor device and wire bonding device
JPH09162351A (en) * 1995-12-13 1997-06-20 Nec Corp Resin-encapsulated electronic device
US6504467B1 (en) * 1999-07-31 2003-01-07 Mannesmann Vdo Ag Switch integral in a semiconductor element
DE102005024347A1 (en) * 2005-05-27 2006-11-30 Infineon Technologies Ag Electrical component with fused power supply connection
US7508295B2 (en) 2005-05-27 2009-03-24 Infineon Technologies Ag Protection circuit
US7554432B2 (en) 2005-05-27 2009-06-30 Infineon Technologies Ag Fuse element with trigger assistance

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162221A (en) * 1995-12-13 1997-06-20 Nec Corp Resin encapsulated semiconductor device and wire bonding device
JPH09162351A (en) * 1995-12-13 1997-06-20 Nec Corp Resin-encapsulated electronic device
US6504467B1 (en) * 1999-07-31 2003-01-07 Mannesmann Vdo Ag Switch integral in a semiconductor element
DE102005024347A1 (en) * 2005-05-27 2006-11-30 Infineon Technologies Ag Electrical component with fused power supply connection
US7504925B2 (en) 2005-05-27 2009-03-17 Infineon Technologies Ag Electric component with a protected current feeding terminal
US7508295B2 (en) 2005-05-27 2009-03-24 Infineon Technologies Ag Protection circuit
US7554432B2 (en) 2005-05-27 2009-06-30 Infineon Technologies Ag Fuse element with trigger assistance
DE102005024347B4 (en) * 2005-05-27 2009-12-17 Infineon Technologies Ag Electrical component with fused power supply connection
DE102005024347B8 (en) * 2005-05-27 2010-07-08 Infineon Technologies Ag Electrical component with fused power supply connection

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