JPH0423430B2 - - Google Patents

Info

Publication number
JPH0423430B2
JPH0423430B2 JP57104756A JP10475682A JPH0423430B2 JP H0423430 B2 JPH0423430 B2 JP H0423430B2 JP 57104756 A JP57104756 A JP 57104756A JP 10475682 A JP10475682 A JP 10475682A JP H0423430 B2 JPH0423430 B2 JP H0423430B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
carrier
semiconductor
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57104756A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58222577A (ja
Inventor
Tooru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57104756A priority Critical patent/JPS58222577A/ja
Publication of JPS58222577A publication Critical patent/JPS58222577A/ja
Publication of JPH0423430B2 publication Critical patent/JPH0423430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP57104756A 1982-06-18 1982-06-18 発光素子 Granted JPS58222577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57104756A JPS58222577A (ja) 1982-06-18 1982-06-18 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57104756A JPS58222577A (ja) 1982-06-18 1982-06-18 発光素子

Publications (2)

Publication Number Publication Date
JPS58222577A JPS58222577A (ja) 1983-12-24
JPH0423430B2 true JPH0423430B2 (enrdf_load_stackoverflow) 1992-04-22

Family

ID=14389327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104756A Granted JPS58222577A (ja) 1982-06-18 1982-06-18 発光素子

Country Status (1)

Country Link
JP (1) JPS58222577A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0740620B2 (ja) * 1986-11-19 1995-05-01 日本電気株式会社 半導体発光素子
JP2724827B2 (ja) * 1987-07-02 1998-03-09 国際電信電話株式会社 赤外発光素子
JPH0513809A (ja) * 1991-07-03 1993-01-22 Nec Corp 半導体発光素子
JP5315899B2 (ja) * 2008-09-30 2013-10-16 信越半導体株式会社 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser

Also Published As

Publication number Publication date
JPS58222577A (ja) 1983-12-24

Similar Documents

Publication Publication Date Title
CN100499190C (zh) 半导体器件
JP4505147B2 (ja) 相分離の少ないｉｉｉ族窒化物４元材料系を用いた半導体構造体および加工方法
US8519411B2 (en) Semiconductor light emitting device
US5107514A (en) Semiconductor optical element
KR100247166B1 (ko) 반도체 발광 장치
JP4288030B2 (ja) Ｉｉｉ族窒化物４元材料系を用いた半導体構造体
US7215691B2 (en) Semiconductor laser device and method for fabricating the same
JP4170679B2 (ja) 半導体発光装置及びその製造方法
JPH0423430B2 (enrdf_load_stackoverflow)
JPH0680859B2 (ja) 半導体レーザー
JP3221073B2 (ja) 発光素子
JP3763459B2 (ja) 半導体レーザ素子及びその製造方法
US4410994A (en) Semiconductor laser
US5572539A (en) II-VI semiconductor laser with different guide layers
US11271369B2 (en) Semiconductor laser and method for manufacturing same
JP2003086894A (ja) 半導体レーザ装置およびその製造方法
JP3801410B2 (ja) 半導体レーザ素子及びその製造方法
JP2624881B2 (ja) 半導体レーザ素子およびその製造方法
US6414977B1 (en) Semiconductor laser device
JP2555984B2 (ja) 半導体レーザおよびその製造方法
JPH054833B2 (enrdf_load_stackoverflow)
JPS61139082A (ja) 半導体発光装置
JPH04206586A (ja) 半導体発光装置及びその製造方法
JPH0555706A (ja) 半導体レーザ
JPH0653614A (ja) 半導体発光素子およびその製造方法