JPH04223372A - Manufacture of photosensor - Google Patents
Manufacture of photosensorInfo
- Publication number
- JPH04223372A JPH04223372A JP2413754A JP41375490A JPH04223372A JP H04223372 A JPH04223372 A JP H04223372A JP 2413754 A JP2413754 A JP 2413754A JP 41375490 A JP41375490 A JP 41375490A JP H04223372 A JPH04223372 A JP H04223372A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- mask
- opening
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 7
- 238000001312 dry etching Methods 0.000 abstract description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000077 silane Inorganic materials 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はファクシミリ、ＯＣＲ、
イメージスキャナなどの読み取り部として用いられる長
尺の光センサの製造方法に関する。[Industrial Application Field] The present invention is applicable to facsimile, OCR,
The present invention relates to a method of manufacturing a long optical sensor used as a reading section of an image scanner or the like.
【０００２】0002
【従来の技術】従来の光センサの製造方法について図３
を参照して説明する。ガラス基板１上にクロム膜を０．
１μｍの膜厚に被着し、これをパターニングして分割さ
れた個別電極となるクロム電極２を形成する［図３の（
ａ）］。[Prior Art] Figure 3 shows a conventional optical sensor manufacturing method.
Explain with reference to. A chromium film is deposited on the glass substrate 1.
The chromium electrode 2 is deposited to a thickness of 1 μm and patterned to form divided individual electrodes [as shown in FIG.
a)].
【０００３】シランを用いグロー放電分解法により全面
にａ−Ｓｉ膜３を形成する。このａ−Ｓｉ膜３の膜厚は
、この膜で光を十分に吸収できるように１〜２μｍにな
される［図３の（ｂ）］。An a-Si film 3 is formed on the entire surface by glow discharge decomposition using silane. The thickness of this a-Si film 3 is set to 1 to 2 μm so that this film can sufficiently absorb light [FIG. 3(b)].
【０００４】フォトリソグラフィ工程により、ａ−Ｓｉ
膜３上に所定のパターンのフォトレジスト膜（図示なし
）を形成し、ドライエッチング法によりａ−Ｓｉ膜３を
パターニングする。この場合に、エッチング条件を調整
してａ−Ｓｉ膜のエッチング段差がなだらかになるよう
にする［図３の（ｃ）］。[0004] Through the photolithography process, a-Si
A photoresist film (not shown) having a predetermined pattern is formed on the film 3, and the a-Si film 3 is patterned by dry etching. In this case, the etching conditions are adjusted so that the etching step of the a-Si film becomes gentle [FIG. 3(c)].
【０００５】次に、ＩＴＯ（インジウム・錫・酸化物）
膜を全面に被着し、これをフォトエッチング法によりパ
ターニングしてＩＴＯ電極４を形成する。ＩＴＯ電極の
膜厚は光の透過率を高く維持するために０．１μｍ以下
にする［図３の（ｄ）］。先の図３（ｃ）の工程でａ−
Ｓｉ膜のエッチング段差をなだらかにしたのは、次に形
成されるＩＴＯ膜の膜厚が薄いので、ａ−Ｓｉ膜の段差
がシャープであるとここでＩＴＯ電極に段切れが発生す
るからである。Next, ITO (indium tin oxide)
A film is deposited on the entire surface and patterned by photo-etching to form an ITO electrode 4. The thickness of the ITO electrode is set to 0.1 μm or less in order to maintain high light transmittance [FIG. 3(d)]. In the step of Figure 3(c) above, a-
The reason why the etching step of the Si film is made gentle is because the thickness of the ITO film to be formed next is thin, so if the step of the a-Si film is sharp, a step break will occur in the ITO electrode here. .
【０００６】[0006]
【発明が解決しようとする課題】上述した従来の製造方
法ではａ−Ｓｉ膜をパターニングするのにフォトリソグ
ラフィ工程とドライエッチング法を用いていたので、■
工程が複雑になる、■高価なドライエッチング用設備を
用いなければならない、■スループットが低い等の欠点
があった。[Problems to be Solved by the Invention] In the conventional manufacturing method described above, a photolithography process and a dry etching method were used to pattern the a-Si film.
The disadvantages include that the process is complicated, (1) expensive dry etching equipment must be used, and (2) throughput is low.
【０００７】また、ａ−Ｓｉ膜のエッチング段差をなだ
らかに形成するために、ドライエッチングを特別な条件
の下で行わなければならないので、プロセスが煩雑にな
るという問題もあった。[0007] Furthermore, in order to form the etching steps of the a-Si film smoothly, dry etching must be carried out under special conditions, resulting in a problem that the process becomes complicated.
【０００８】[0008]
【課題を解決するための手段】本発明の光センサの製造
方法は、絶縁基板上に第１の電極を形成する工程と、該
電極上にマスクを用いて感光性半導体層を所定の形状に
堆積する工程と、該感光性半導体層上に第２の電極を形
成する工程と、を有するものであって、前記マスクは、
前記絶縁基板と対向する側で開口部の開口面積が狭く反
対側の面で開口面積が広くなる形状を有している。[Means for Solving the Problems] The method for manufacturing an optical sensor of the present invention includes the steps of forming a first electrode on an insulating substrate, and forming a photosensitive semiconductor layer onto the electrode into a predetermined shape using a mask. and forming a second electrode on the photosensitive semiconductor layer, the mask comprising:
The opening has a shape in which the opening area is narrow on the side facing the insulating substrate, and the opening area is wide on the opposite side.
【０００９】[0009]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は本発明の一実施例の製造工程段階を
示す断面図である。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing the manufacturing process steps of an embodiment of the present invention.
【００１０】ガラス基板１上にクロムをスパッタにより
０．１μｍの膜厚に堆積し、フォトエッチング法により
所定の形状にパターン化してクロム電極２を形成する［
図１の（ａ）］。Chromium is deposited on the glass substrate 1 to a thickness of 0.1 μm by sputtering, and patterned into a predetermined shape by photoetching to form the chromium electrode 2.
Figure 1(a)].
【００１１】その後、図１の（ｂ）に示すように、メタ
ルマスク２０を用いてシランのグロー放電分解法により
所定の形状のａ−Ｓｉ膜３を形成する。このメタルマス
ク２０は平坦部２２と凸起部２３とを有し、平坦部２２
のａ−Ｓｉ膜の形成箇所に対応した位置には所望のａ−
Ｓｉ膜の形状に開孔が形成されている。この開孔とこれ
に隣接する凸起部の側壁によってこのマスクの開口部２
１が構成されている。Thereafter, as shown in FIG. 1B, an a-Si film 3 having a predetermined shape is formed by glow discharge decomposition of silane using a metal mask 20. This metal mask 20 has a flat part 22 and a convex part 23.
A desired a-Si film is formed at a position corresponding to the location where the a-Si film is formed.
Openings are formed in the shape of the Si film. The opening 2 of this mask is formed by this opening and the side wall of the convex portion adjacent thereto.
1 is configured.
【００１２】この工程において、シランがプラズマ中で
分解されてＳｉが活性種となり、これがガラス基板上に
付着してａ−Ｓｉ膜が堆積されるが、本実施例で用いら
れるメタルマスクには、開口部２１内に凸起部２３が存
在するため、斜め方向からの活性種の基板への付着確率
が低下する。そして、その低下の度合いが開孔の中央に
比べて端部で大きくなるため、端部ほどａ−Ｓｉ膜の堆
積速度が低下する。したがって、凸起部の形状、高さお
よび開孔からの距離を適当に選ぶことにより、ａ−Ｓｉ
膜の段差が所望のテーパー角を有するようにすることが
可能となる。In this step, silane is decomposed in plasma and Si becomes active species, which adheres to the glass substrate to form an a-Si film. Since the convex portion 23 exists within the opening 21, the probability of adhesion of active species to the substrate from an oblique direction is reduced. Since the degree of the decrease is greater at the edges than at the center of the opening, the deposition rate of the a-Si film decreases closer to the edges. Therefore, by appropriately selecting the shape, height, and distance of the protrusion from the aperture, a-Si
It becomes possible to make the step of the membrane have a desired taper angle.
【００１３】次に、ＩＴＯをスパッタにより０．１μｍ
堆積し、フォトエッチング法により所定の形状にパター
ン化し、ＩＴＯ電極４を形成する［図１の（ｃ）］。そ
の後クロム電極２、ＩＴＯ電極４をそれぞれ信号処理回
路と接続することにより光センサが完成する。Next, ITO was sputtered to a thickness of 0.1 μm.
It is deposited and patterned into a predetermined shape by photo-etching to form an ITO electrode 4 [FIG. 1(c)]. Thereafter, the chromium electrode 2 and the ITO electrode 4 are connected to a signal processing circuit to complete the optical sensor.
【００１４】以上説明したように、本実施例の光センサ
の製造方法によれば、設備が高価でスループットの低い
ドライエッチング法を用いることなくなだらかな段差形
状を有するａ−Ｓｉ膜を形成することができる。As explained above, according to the optical sensor manufacturing method of this embodiment, it is possible to form an a-Si film having a gently stepped shape without using dry etching which requires expensive equipment and has low throughput. I can do it.
【００１５】図２は、本発明の他の実施例の一工程段階
を示す断面図である。この工程は１図（ｂ）の工程に対
応している。本実施例は、一つのガラス基板から光セン
サを多面取りする場合の例である。本実施例ではａ−Ｓ
ｉ膜３の形成工程において、複数の開口部３１を有する
メタルマスク３０をガラス基板１上に配置する。このメ
タルマスク３０も、先の実施例の場合と同様に平坦部３
２と凸起部３３とを有しているが、本実施例では、開口
部３１は凸起部にテーパをもって形成されている。即ち
、開口部３１の開口面積はガラス基板１と対向する部分
で最も狭く、そしてガラス基板から離れるにしたがって
、次第に大きくなっている。このマスクでは、テーパ角
の大きさおよび凸部の高さを適当に選択することにより
、ａ−Ｓｉ膜の段差に所望のテーパ角をつけることが可
能となる。FIG. 2 is a cross-sectional view showing one process step of another embodiment of the invention. This process corresponds to the process shown in FIG. 1(b). This embodiment is an example in which multiple optical sensors are fabricated from one glass substrate. In this example, a-S
In the step of forming the i-film 3, a metal mask 30 having a plurality of openings 31 is placed on the glass substrate 1. This metal mask 30 also has flat portions 3 as in the previous embodiment.
In this embodiment, the opening 31 is formed with a taper on the protrusion. That is, the opening area of the opening 31 is narrowest at the portion facing the glass substrate 1, and gradually increases as the distance from the glass substrate increases. In this mask, by appropriately selecting the size of the taper angle and the height of the convex portion, it is possible to give a desired taper angle to the step of the a-Si film.
【００１６】続いて、先の実施例と同様にＩＴＯ電極を
形成し、光センサ毎に個々の基板に分割する。Subsequently, ITO electrodes are formed in the same manner as in the previous embodiment, and the substrates are divided into individual substrates for each optical sensor.
【００１７】[0017]
【発明の効果】以上説明したように、本発明の光センサ
の製造方法は、開口部の開口面積が上面と下面とで異な
っているマスクを用いて感光性半導体層を形成するもの
であるので、本発明によれば、複雑なフォトリソグラフ
ィ工程が不要となり、また高価なドライエッチング設備
を用いたり特別なエッチング条件を遵守したりする必要
がなくなり、高スループットで容易に光センサを製造す
ることができるようになる。[Effects of the Invention] As explained above, in the method for manufacturing an optical sensor of the present invention, a photosensitive semiconductor layer is formed using a mask in which the opening area of the opening portion is different on the upper surface and the lower surface. According to the present invention, there is no need for a complicated photolithography process, no need to use expensive dry etching equipment, and no need to comply with special etching conditions, making it possible to easily manufacture optical sensors with high throughput. become able to.
【図１】本発明の一実施例の製造工程段階を示す断面図
。FIG. 1 is a cross-sectional view showing manufacturing process steps of an embodiment of the present invention.
【図２】本発明の他の実施例を説明するための工程途中
の断面図。FIG. 2 is a cross-sectional view in the middle of a process for explaining another embodiment of the present invention.
【図３】従来例の製造工程段階を示す断面図。FIG. 3 is a cross-sectional view showing manufacturing process steps in a conventional example.
１ ガラス基板 ２ クロム電極 ３ ａ−Ｓｉ膜 ４ ＩＴＯ電極 ２０、３０ メタルマスク ２１、３１ 開口部 ２２、３２ 平坦部 ２３、３３ 凸起部 1 Glass substrate 2 Chromium electrode 3 a-Si film 4 ITO electrode 20, 30 Metal mask 21, 31 Opening 22, 32 Flat part 23, 33 Convex part
Claims (3)
程と、開口部の開口面積が厚さ方向で差のあるマスクを
開口面積の小さい方を前記絶縁基板側に向けて前記絶縁
基板上に配置し、半導体を堆積して前記第１の電極の一
方の端部を覆う所定の形状の感光性半導体層を前記絶縁
基板上に形成する工程と、一方の端部が前記感光性半導
体層の上に懸かる第２の電極を前記絶縁基板上に形成す
る工程と、を具備する光センサの製造方法。1. A step of forming a first electrode on an insulating substrate; and a step of forming a first electrode on the insulating substrate using a mask having an opening area that is different in the thickness direction, with the smaller opening area facing the insulating substrate side. forming a photosensitive semiconductor layer having a predetermined shape on the insulating substrate and covering one end of the first electrode by depositing a semiconductor; forming a second electrode overlying the layer on the insulating substrate.
しており、平坦部において所定の形状の開口が形成され
たものである請求項１記載の光センサの製造方法。2. The method of manufacturing an optical sensor according to claim 1, wherein the mask has a flat portion and a convex portion, and an opening having a predetermined shape is formed in the flat portion.
に開口面積が拡がる形状である請求項１記載の光センサ
の製造方法。3. The method of manufacturing an optical sensor according to claim 1, wherein the opening of the mask has a shape in which the opening area gradually increases in the thickness direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2413754A JPH04223372A (en) | 1990-12-25 | 1990-12-25 | Manufacture of photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2413754A JPH04223372A (en) | 1990-12-25 | 1990-12-25 | Manufacture of photosensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04223372A true JPH04223372A (en) | 1992-08-13 |
Family
ID=18522326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2413754A Pending JPH04223372A (en) | 1990-12-25 | 1990-12-25 | Manufacture of photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04223372A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196547A (en) * | 1992-09-11 | 1994-07-15 | Matsushita Electric Ind Co Ltd | Metal film deposition device and metal film deposition method |
-
1990
- 1990-12-25 JP JP2413754A patent/JPH04223372A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196547A (en) * | 1992-09-11 | 1994-07-15 | Matsushita Electric Ind Co Ltd | Metal film deposition device and metal film deposition method |
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