JPH0422220B2 - - Google Patents
Info
- Publication number
- JPH0422220B2 JPH0422220B2 JP58113298A JP11329883A JPH0422220B2 JP H0422220 B2 JPH0422220 B2 JP H0422220B2 JP 58113298 A JP58113298 A JP 58113298A JP 11329883 A JP11329883 A JP 11329883A JP H0422220 B2 JPH0422220 B2 JP H0422220B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- ion
- sensitivity
- circuit
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113298A JPS604851A (ja) | 1983-06-22 | 1983-06-22 | イオン感応性電界効果トランジスタの使用方法およびイオンモニタ装置 |
| US06/622,250 US4641249A (en) | 1983-06-22 | 1984-06-19 | Method and device for compensating temperature-dependent characteristic changes in ion-sensitive FET transducer |
| DE8484107120T DE3485624D1 (de) | 1983-06-22 | 1984-06-20 | Verfahren und einrichtung zur kompensation von temperaturabhaengigen eigenschaftsaenderungen in ionenempfindlichen feldeffekttransistor-sensoren. |
| EP84107120A EP0129852B1 (en) | 1983-06-22 | 1984-06-20 | Method and device for compensating temperature-dependent characteristic changes in ion-sensitive fet transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58113298A JPS604851A (ja) | 1983-06-22 | 1983-06-22 | イオン感応性電界効果トランジスタの使用方法およびイオンモニタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS604851A JPS604851A (ja) | 1985-01-11 |
| JPH0422220B2 true JPH0422220B2 (enExample) | 1992-04-16 |
Family
ID=14608660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58113298A Granted JPS604851A (ja) | 1983-06-22 | 1983-06-22 | イオン感応性電界効果トランジスタの使用方法およびイオンモニタ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS604851A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225056A (ja) * | 1984-04-24 | 1985-11-09 | Kuraray Co Ltd | イオンモニタ装置 |
-
1983
- 1983-06-22 JP JP58113298A patent/JPS604851A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS604851A (ja) | 1985-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0129852B1 (en) | Method and device for compensating temperature-dependent characteristic changes in ion-sensitive fet transducer | |
| Chin et al. | A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process | |
| Chung et al. | ISFET performance enhancement by using the improved circuit techniques | |
| Jakobson et al. | 1/f noise in ion sensitive field effect transistors from subthreshold to saturation | |
| JPH0765983B2 (ja) | 液体中のイオンの活性度を測定する装置および方法 | |
| Jamasb | An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs) | |
| JPH0684949B2 (ja) | イオン濃度を測定する方法 | |
| Poghossian | Determination of the pHpzc of insulators surface from capacitance–voltage characteristics of MIS and EIS structures | |
| GB2077439A (en) | Compensating temperature-dependent characteristic changes in ion-sensitive fet transducers | |
| US4879517A (en) | Temperature compensation for potentiometrically operated ISFETS | |
| US10900929B2 (en) | PH value measuring device comprising in situ calibration means | |
| EP0223597B1 (en) | Buffer compensation in enzyme - modified ion sensitive devices | |
| US7981264B2 (en) | Drift calibration method and device for the potentiometric sensor | |
| US7368917B2 (en) | Electronic circuit for ion sensor with body effect reduction | |
| US5602467A (en) | Circuit for measuring ion concentrations in solutions | |
| JPH0422220B2 (enExample) | ||
| US20040132204A1 (en) | Portable pH detector | |
| JP3112599B2 (ja) | イオンセンサ及びイオン測定方法 | |
| JPS6260662B2 (enExample) | ||
| JPH0464426B2 (enExample) | ||
| JPH0682115B2 (ja) | イオンモニタ装置 | |
| Jamasb et al. | Correction of instability in ion-selective field effect transistors (ISFETs) for accurate continuous monitoring of pH | |
| JPH01209348A (ja) | イオン濃度などの測定装置 | |
| JPS607355A (ja) | イオン活量測定装置 | |
| KR910006276B1 (ko) | 감이온 전계효과 트랜지스터를 이용한 이온농도 측정 회로 |