JPH042183B2 - - Google Patents
Info
- Publication number
- JPH042183B2 JPH042183B2 JP12029984A JP12029984A JPH042183B2 JP H042183 B2 JPH042183 B2 JP H042183B2 JP 12029984 A JP12029984 A JP 12029984A JP 12029984 A JP12029984 A JP 12029984A JP H042183 B2 JPH042183 B2 JP H042183B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- pattern
- substrate
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229920002050 silicone resin Polymers 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 125000005397 methacrylic acid ester group Chemical group 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- -1 polydimethylsiloxane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VHRYZQNGTZXDNX-UHFFFAOYSA-N methacryloyl chloride Chemical compound CC(=C)C(Cl)=O VHRYZQNGTZXDNX-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- FIONWRDVKJFHRC-UHFFFAOYSA-N trimethyl(2-phenylethenyl)silane Chemical compound C[Si](C)(C)C=CC1=CC=CC=C1 FIONWRDVKJFHRC-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029984A JPS60263145A (ja) | 1984-06-12 | 1984-06-12 | ポジ型レジストパタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029984A JPS60263145A (ja) | 1984-06-12 | 1984-06-12 | ポジ型レジストパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60263145A JPS60263145A (ja) | 1985-12-26 |
| JPH042183B2 true JPH042183B2 (enrdf_load_html_response) | 1992-01-16 |
Family
ID=14782794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12029984A Granted JPS60263145A (ja) | 1984-06-12 | 1984-06-12 | ポジ型レジストパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60263145A (enrdf_load_html_response) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621230A (ja) * | 1985-06-27 | 1987-01-07 | Toshiba Corp | パタ−ン形成方法 |
| US20060151435A1 (en) * | 2002-09-18 | 2006-07-13 | Jun Taniguchi | Surface processing method |
| US7629596B2 (en) | 2005-02-21 | 2009-12-08 | Tokyo University Of Science Educational Foundation Administrative Organization | Method of producing 3-D mold, method of producing finely processed product, method of producing fine-pattern molded product, 3-D mold, finely processed product, fine-pattern molded product and optical component |
-
1984
- 1984-06-12 JP JP12029984A patent/JPS60263145A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60263145A (ja) | 1985-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0069854B1 (en) | Method of forming via holes in insulating layers | |
| JPH0147008B2 (enrdf_load_html_response) | ||
| JPH0376742B2 (enrdf_load_html_response) | ||
| US20040072096A1 (en) | Micropattern forming material and fine structure forming method | |
| JPH0425126A (ja) | 半導体装置の製造方法 | |
| US7341939B2 (en) | Method for patterning micro features by using developable bottom anti-reflection coating | |
| US5139922A (en) | Method of making resist pattern | |
| JPH042183B2 (enrdf_load_html_response) | ||
| TW449799B (en) | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby | |
| TW200300962A (en) | Improved lithography process for transparent substrates | |
| US4476216A (en) | Method for high resolution lithography | |
| JP3119021B2 (ja) | 半導体装置のコンタクトホール形成方法 | |
| JPH0334053B2 (enrdf_load_html_response) | ||
| KR100811410B1 (ko) | 레지스트 플로우 공정 및 코팅막 형성 공정을 포함하는반도체 소자의 제조 방법 | |
| Berker et al. | Characterization of AZ-2415 as a negative electron resist | |
| JP2001092152A (ja) | 半導体装置の製造方法 | |
| JPH0318179B2 (enrdf_load_html_response) | ||
| JPH02156244A (ja) | パターン形成方法 | |
| JPH0943855A (ja) | レジストパターン形成方法 | |
| JPS63117422A (ja) | 半導体装置の製造方法 | |
| JPH0313949A (ja) | レジストパターンの形成方法 | |
| KR930006133B1 (ko) | 모스소자의 콘택트홀 형성방법 | |
| JPH01303432A (ja) | 感光性樹脂組成物 | |
| JPH0458170B2 (enrdf_load_html_response) | ||
| JP3570107B2 (ja) | レジストパターンの形成方法及び半導体装置の製造方法 |