JPH0420132B2 - - Google Patents
Info
- Publication number
- JPH0420132B2 JPH0420132B2 JP13893483A JP13893483A JPH0420132B2 JP H0420132 B2 JPH0420132 B2 JP H0420132B2 JP 13893483 A JP13893483 A JP 13893483A JP 13893483 A JP13893483 A JP 13893483A JP H0420132 B2 JPH0420132 B2 JP H0420132B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- movable electrode
- semiconductor substrate
- layer
- fixed electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13893483A JPS6031032A (ja) | 1983-07-29 | 1983-07-29 | 半導体容量形圧力センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13893483A JPS6031032A (ja) | 1983-07-29 | 1983-07-29 | 半導体容量形圧力センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6031032A JPS6031032A (ja) | 1985-02-16 |
| JPH0420132B2 true JPH0420132B2 (enrdf_load_stackoverflow) | 1992-03-31 |
Family
ID=15233556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13893483A Granted JPS6031032A (ja) | 1983-07-29 | 1983-07-29 | 半導体容量形圧力センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6031032A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4716492A (en) * | 1986-05-05 | 1987-12-29 | Texas Instruments Incorporated | Pressure sensor with improved capacitive pressure transducer |
| US4774626A (en) * | 1986-05-05 | 1988-09-27 | Texas Instruments Incorporated | Pressure sensor with improved capacitive pressure transducer |
| JP2514067Y2 (ja) * | 1987-06-29 | 1996-10-16 | 京セラ株式会社 | セラミック製トランスデュ−サ |
| JP2005214735A (ja) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | 圧力検出装置用パッケージ |
| CN104395721A (zh) * | 2012-03-16 | 2015-03-04 | 维塔尔传感器控股有限公司 | 介电常数屏蔽 |
-
1983
- 1983-07-29 JP JP13893483A patent/JPS6031032A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6031032A (ja) | 1985-02-16 |
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