JPH04199736A - Manufacture of pin type radiation fin - Google Patents
Manufacture of pin type radiation finInfo
- Publication number
- JPH04199736A JPH04199736A JP2332606A JP33260690A JPH04199736A JP H04199736 A JPH04199736 A JP H04199736A JP 2332606 A JP2332606 A JP 2332606A JP 33260690 A JP33260690 A JP 33260690A JP H04199736 A JPH04199736 A JP H04199736A
- Authority
- JP
- Japan
- Prior art keywords
- pin
- heat dissipation
- pins
- radiation fin
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 230000005855 radiation Effects 0.000 title abstract description 26
- 230000017525 heat dissipation Effects 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 11
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、放熱フィンの製造技術に関し、特にピン形放
熱フィンに適用して有効な技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a technology for manufacturing heat radiation fins, and particularly to a technology that is effective when applied to pin-shaped heat radiation fins.
ＬＳＩパッケージを始めとする各種電子機器の冷却方式
には、強制空冷方式と伝導水冷方式とがある。このうち
、放熱フィン（ヒートシンク）を使用した強制空冷方式
は、構造が簡単であることから、最も広範に利用されて
いる。なお、上記ＬＳＩパッケージの冷却技術について
は、日経ＢＰ社発行、［日経エレクトロニクス１９８７
．７．１３Ｊ Ｐ１６７〜Ｐ１７６において論じられて
いる。Cooling methods for various electronic devices including LSI packages include forced air cooling and conduction water cooling. Among these, the forced air cooling method using radiation fins (heat sinks) is the most widely used because of its simple structure. Regarding the cooling technology of the above LSI package, please refer to Nikkei Electronics 1987, published by Nikkei BP.
．． 7.13J P167-P176.
ところで、従来の放熱フィンは、ＡＩ！の押出し成形で
製造したリブ状のフィンを有するものが一般的であった
が、近年、より放熱効率の高い放熱フィンとして、ベー
ス上に多数のピンを立てたピン形放熱フィンが注目され
ている。By the way, conventional heat dissipation fins are AI! It was common to have rib-shaped fins manufactured by extrusion molding, but in recent years, pin-shaped heat dissipation fins with a large number of pins on the base have been attracting attention as a heat dissipation fin with higher heat dissipation efficiency. .
ところが、従来のピン形放熱フィンは、ピンとベースと
を一体に成形しているので加工性が悪く、そのため、ベ
ース上にピンを密に立てることが困難で、放熱効率か充
分に得られないという問題や、製造コス）・が高いとい
う問題かあった。However, conventional pin-shaped heat dissipation fins have poor workability because the pin and base are integrally molded, making it difficult to stand the pins closely on the base, making it difficult to achieve sufficient heat dissipation efficiency. There was also the problem of high manufacturing costs.
本発明の目的は、ピン形放熱フィンの放熱効率を向上さ
せる技術を提供することにある。An object of the present invention is to provide a technique for improving the heat radiation efficiency of pin-shaped radiation fins.
本発明の他の目的は、ピン形放熱フィンの製造コストを
低減する技術を提供することにある。Another object of the present invention is to provide a technique for reducing manufacturing costs of pin-shaped heat dissipating fins.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、次のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
本発明によるピン形放熱フィンの製造方法は、放熱フィ
ンを構成するピンをあらかじめ一本ずつ単体で製造して
おき、その後、上記ピンの所定本数をＬＳＴパッケージ
などの被放熱体に接合するものである。The method for manufacturing a pin-shaped heat dissipation fin according to the present invention is to manufacture the pins constituting the heat dissipation fin individually one by one in advance, and then bond a predetermined number of the pins to a heat dissipation object such as an LST package. be.
上記した手段によれば、あらかじめ単体で製造したピン
を被放熱体に接合することにより、従来のベース・ピン
一体形放熱フィンに比へてピンピッチを微細化すること
ができるので、放熱効率の高いピン形放熱フィンが得ら
れる。According to the above-mentioned method, by bonding the pin manufactured as a single unit to the heat dissipation object, the pin pitch can be made finer than that of the conventional base/pin integrated heat dissipation fin, thereby achieving high heat dissipation efficiency. A pin-shaped heat dissipation fin is obtained.
また、寸法や形状の異なる被放熱体毎に放熱フィンを設
計、製造する必要かないので、低コストのピン形放熱フ
ィンが得られる。Further, since it is not necessary to design and manufacture a radiation fin for each heat radiation object having a different size or shape, a low-cost pin-shaped radiation fin can be obtained.
以下、実施例により本発明を説明する。The present invention will be explained below with reference to Examples.
〔実施例１〕
本実施例１によるピン形放熱フィンの製造方法では、ま
ず第１図に示すようなマイクロピン１を多数本用意する
。上記マイクロピン１は、ＡＡ、Ｃｕなとのような熱伝
導度の高い金属からなり、例えば長さ２０ｍｍ程度、直
径０．５−程度の円柱状をなしている。上記マイクロピ
ンｊは、プレス、ダイキャスト、エツチングなど、従来
の金属加工技術を利用して簡単に製造することができる
。[Example 1] In the method for manufacturing a pin-shaped heat dissipation fin according to Example 1, first, a large number of micro pins 1 as shown in FIG. 1 are prepared. The micro pin 1 is made of a metal with high thermal conductivity such as AA or Cu, and has a cylindrical shape with a length of about 20 mm and a diameter of about 0.5 mm. The micro pin j can be easily manufactured using conventional metal processing techniques such as pressing, die casting, and etching.
上記マイクロピンｌの一端には、必要に応じて太径の接
合部２が設けられる。上記接合部２は、■マイクロピン
ｌ同士の間隔を規制する、■マイクロピンｌの接合面積
を確保する、■マイクロピン１の整列を容易にする、な
どの機能を有している。上記接合部２は、例えばマイク
ロピン１の本体と一体成形で製造することができる。ま
た、マイクロピン１の一端をプレスなどで潰して製造す
ることもできる。さらに、マイクロピン１の本体と接合
部２とを別体で製造し、その後接合部２に設けた孔にマ
イクロピン１の一端を挿入して製造することもできる。A large-diameter joint 2 is provided at one end of the micropin 1, if necessary. The joint portion 2 has the following functions: (1) regulating the distance between the micro-pins 1; (2) securing the joint area of the micro-pins 1; and (2) facilitating the alignment of the micro-pins 1. The joint portion 2 can be manufactured, for example, by integral molding with the main body of the micropin 1. Alternatively, it can also be manufactured by crushing one end of the micropin 1 with a press or the like. Furthermore, it is also possible to manufacture the main body of the micropin 1 and the joining part 2 separately, and then inserting one end of the micropin 1 into a hole provided in the joining part 2.
マイクロピン１の本体や接合部２は、前記第１図に示す
形状に限定されない。例えば第２図や第３図に示すよう
に、マイクロピンｌの本体を四角柱状にしたり、接合部
２を円板状にしたりするなど、適宜設計変更することが
できる。また、第４図に示すように、複数本のマイクロ
ピンＩのそれぞれの一端に共通の接合部２を設けてもよ
い。このようなマイクロピン１は、例えば第５図に示す
ように、Ａｌ、Ｃｕなとの薄い板材をエツチングやプレ
スで加工してマイクロピン１の本体と接合部２とを一＝
一体成形し、その後本体部分を直角に折り曲げ加工する
ことによって容易に製造することができる。The main body and joint portion 2 of the micropin 1 are not limited to the shape shown in FIG. 1 above. For example, as shown in FIGS. 2 and 3, the design can be changed as appropriate, such as by making the main body of the micro pin l into a quadrangular prism shape or making the joint part 2 into a disk shape. Further, as shown in FIG. 4, a common joint portion 2 may be provided at one end of each of the plurality of micro pins I. For example, as shown in FIG. 5, such a micro pin 1 is made by processing a thin plate material such as Al or Cu by etching or pressing to connect the main body of the micro pin 1 and the joint part 2.
It can be easily manufactured by integrally molding and then bending the main body portion at right angles.
次に、上記のようにして製造したマイクロピン１同士を
接合することにより、第６図に示すようなピン形放熱フ
ィン４が得られる。上記ピン形放熱フィン４は、例えば
第１図に示す形状のマイクロピンＩを６４本用意し、そ
れらの接合部２同士を接合することによって組立てたも
のである。マイクロピン１同士は、例えば高熱伝導性の
シリコーン系接着剤や、半田のような低融点ろう材を使
って接合する。また、第７図に示すように、それぞれの
マイクロピン１の接合部２に凹部４ａと凸部４ｂとから
なる嵌合部を設け、１つのマイクロピンＩの凸部４ｂを
他のマイクロピン１の凹部４ａに挿入して接合すること
もできる。なお、ピン形放熱フィン４の組立てを容易に
するため、接合部２の表面にニッケルメッキなどの磁性
体膜を被着し、磁石を使ってマイクロピン１同士を速や
かに整列させることもできる。Next, by joining the micropins 1 manufactured as described above to each other, a pin-shaped heat dissipation fin 4 as shown in FIG. 6 is obtained. The pin-shaped heat dissipation fin 4 is assembled by preparing, for example, 64 micro pins I having the shape shown in FIG. 1, and joining their joining parts 2 together. The micro pins 1 are bonded to each other using, for example, a highly thermally conductive silicone adhesive or a low melting point brazing material such as solder. Further, as shown in FIG. 7, a fitting portion consisting of a recess 4a and a projection 4b is provided in the joint 2 of each micro pin 1, and the projection 4b of one micro pin I is connected to the other micro pin 1. They can also be joined by being inserted into the recess 4a. In order to facilitate the assembly of the pin-shaped radiation fins 4, a magnetic film such as nickel plating may be applied to the surface of the joint portion 2, and the micro pins 1 may be quickly aligned using a magnet.
また、上記した組立て方法の他、被放熱体の表面にマイ
クロピン１を一本ずつ接合することによって、被放熱体
上で直接ピン形放熱フィン４を組立ててもよい。In addition to the above assembly method, the pin-shaped heat dissipation fins 4 may be assembled directly on the heat dissipation target by joining the micro pins 1 one by one to the surface of the heat dissipation target.
第８図は、上記ピン形放熱フィン３を装着したピングリ
ッドアレイ（Ｐｉｎ Ｇｒｉｄ Ａｒｒａｙ） ５であ
る。FIG. 8 shows a pin grid array 5 equipped with the pin-shaped heat dissipating fins 3 described above.
ピングリッドアレイ５の絶縁基板６は、例えばガラス布
基材エポキシ樹脂（ガラエポ）またはガラス布基材ポリ
イミド樹脂などの合成樹脂で構成されており、その下面
には多数の配線７が形成されている。上記配線７は、例
えばＣｕからなり、その表面にはＮｉ、Ａｕの順でイッ
キか施されている。上記絶縁基板６の下面には、上記配
線７と電気的に接続された多数のリードピン８が挿入さ
れている。上記リードピン８は、４２７０イやコバール
などのＦｅ系合金で構成されており、その表面にはＳｎ
あるいは半田なとのメツキが施されている。The insulating substrate 6 of the pin grid array 5 is made of a synthetic resin such as a glass cloth-based epoxy resin (glass-epoxy resin) or a glass cloth-based polyimide resin, and a large number of wiring lines 7 are formed on its lower surface. . The wiring 7 is made of, for example, Cu, and its surface is coated with Ni and then Au in that order. A large number of lead pins 8 electrically connected to the wiring 7 are inserted into the lower surface of the insulating substrate 6. The lead pin 8 is made of Fe-based alloy such as 4270I or Kovar, and its surface has Sn
Or it is decorated with solder.
上記絶縁基板６上には、例えばＣｕの薄板からなる熱拡
散板９が設けられている。上記熱拡散板９は、例えばエ
ポキシ樹脂系またはシリコーンゴム系の接着剤１０によ
って絶縁基板６の上面に接着されている。また、上記熱
拡散板９上には、ピン形放熱フィン３が設けられている
。上記ピン形放熱フィン３は、例えば前記マイクロピン
１を一本ずつ熱拡散板９上に接合することによって、熱
拡散板９上で直接組立てたものである。マイクロピン１
と熱拡散板９との接着には、例えばエポキシ樹脂系また
はシリコーンゴム系の接着剤１０を使用する。なお、マ
イクロピン１と熱拡散板９とが異なる材料で構成されて
いる場合は、マイクロピンｌを熱拡散板９上に接合する
際、その接合部２と、隣接する他のマイクロピン１の接
合部２との間に僅かな隙間（図示せず）を設けるとよい
。A heat diffusion plate 9 made of a thin plate of Cu, for example, is provided on the insulating substrate 6. The heat diffusion plate 9 is bonded to the upper surface of the insulating substrate 6 with an adhesive 10 made of, for example, epoxy resin or silicone rubber. Further, on the heat diffusion plate 9, a pin-shaped radiation fin 3 is provided. The pin-shaped heat dissipation fin 3 is assembled directly on the heat diffusion plate 9 by, for example, bonding the micro pins 1 one by one onto the heat diffusion plate 9. Micro pin 1
For adhering the heat diffusion plate 9 to the heat diffusion plate 9, an epoxy resin-based or silicone rubber-based adhesive 10 is used, for example. Note that if the micro pin 1 and the heat diffusion plate 9 are made of different materials, when the micro pin l is bonded onto the heat diffusion plate 9, the bonded portion 2 and the other adjacent micro pin 1 may be It is preferable to provide a slight gap (not shown) between the joint part 2 and the joint part 2.
このようにすると、マイクロピンｌと熱拡散板９との熱
膨張係数差に起因してピン形放熱フィン３と熱拡散板９
との界面に発生する応力を有効に緩和することができる
ので、ピン形放熱フィン３と熱拡散板９との密着不良な
どによる放熱効率の低下を有効に防止することができる
。In this way, due to the difference in thermal expansion coefficient between the micro pins l and the heat diffusion plate 9, the pin-shaped heat dissipation fin 3 and the heat diffusion plate 9
Since the stress generated at the interface between the pin-shaped heat dissipating fins 3 and the heat diffusion plate 9 can be effectively alleviated, a decrease in heat dissipation efficiency due to poor adhesion between the pin-shaped heat dissipating fins 3 and the heat diffusion plate 9 can be effectively prevented.
上記熱拡散板９の下面中央部には、半導体チップＩＩが
その集積回路形成面を下に向けた状態で接合されている
。すなわち、ピングリッドアレイ５は、半導体チップ１
１から発生した熱を熱拡散板９の全面を通じてピン形放
熱フィン３に伝達し、それぞれのマイクロピン１の表面
から外部に逃がす冷却構造になっている。上記半導体チ
ップ１１は、接着剤１２によって前記熱拡散板９の下面
に接着されている。上記接着剤１２は、半導体チップ１
１と熱拡散板９との熱膨張係数の不整合に起因する応力
を緩和する能力の高い、例えばシリコーンゴムのような
低ヤング率の接着剤からなる。A semiconductor chip II is bonded to the center of the lower surface of the heat diffusion plate 9 with its integrated circuit forming surface facing downward. That is, the pin grid array 5 is connected to the semiconductor chip 1.
The cooling structure is such that the heat generated from the micro pins 1 is transmitted to the pin-shaped radiation fins 3 through the entire surface of the heat diffusion plate 9, and is released from the surface of each micro pin 1 to the outside. The semiconductor chip 11 is bonded to the lower surface of the heat diffusion plate 9 with an adhesive 12. The adhesive 12 is applied to the semiconductor chip 1
It is made of an adhesive with a low Young's modulus, such as silicone rubber, which has a high ability to relieve stress caused by mismatching of the coefficients of thermal expansion between the heat diffusion plate 1 and the thermal expansion plate 9.
上記半導体チップ１１と絶縁基板６の配線７とは、Ａｕ
またはＡＡなどからなるワイヤ１３によって電気的に接
続されている。上記半導体チップ１１は、熱拡散板９、
絶縁基板６、エポキシ樹脂などの合成樹脂からなるダム
１４およびキャップ１５によって隔成されたキャビティ
１６内に封止されており、上記キャビティ１６内には、
水分の浸入による半導体チップ１１およびワイヤ１３の
腐食を防止するためのシリコーンゲル１７が注入されて
いる。The wiring 7 between the semiconductor chip 11 and the insulating substrate 6 is made of Au.
Alternatively, they are electrically connected by a wire 13 made of AA or the like. The semiconductor chip 11 includes a heat diffusion plate 9,
It is sealed in a cavity 16 separated by an insulating substrate 6, a dam 14 made of synthetic resin such as epoxy resin, and a cap 15.
Silicone gel 17 is injected to prevent corrosion of the semiconductor chip 11 and wires 13 due to moisture intrusion.
このように、本実施例１のピン形放熱フィンｌの製造方
法によれば、下記の効果を得ることができる。As described above, according to the method of manufacturing the pin-shaped heat dissipation fin l of the first embodiment, the following effects can be obtained.
（１）、あらかじめ−本ずつ製造したマイクロピン１同
士を接合してピン形放熱フィン３を製造することにより
、従来のベース・ピン一体形放熱フィンに比べてピンピ
ッチを微細化することができるので、ピン形放熱フィン
３の放熱効率を向上させることかできる。(1) By manufacturing the pin-shaped heat dissipation fin 3 by bonding the micro pins 1 that have been produced in advance one by one, the pin pitch can be made finer than the conventional base/pin integrated heat dissipation fin. , the heat dissipation efficiency of the pin-shaped heat dissipation fins 3 can be improved.
（２）、あらかじめ−本ずつ製造したマイクロピン１同
士を接合してピン形放熱フィン３を製造することにより
、ベースとピンとを一体成形する従来のピン形放熱フィ
ンの製造方法に比べて加工性が向上する。(2) By manufacturing the pin-shaped heat dissipation fin 3 by joining together the micro pins 1 that have been manufactured one by one in advance, the processability is improved compared to the conventional manufacturing method of the pin-shaped heat dissipation fin in which the base and the pin are integrally molded. will improve.
（３）、あらかじめ−本ずつ製造したマイクロピンＩ同
士を接合してピン形放熱フィン３を製造することにより
、ピン形放熱フィン３の外形寸法を自由に拡大または縮
小することができるので、寸法や形状の異なるピングリ
ッドアレイ毎に放熱フィンを設計、製造する必要がない
。(3) By manufacturing the pin-shaped heat dissipation fin 3 by joining together the micro pins I that have been produced in advance one by one, the external dimensions of the pin-shaped heat dissipation fin 3 can be freely enlarged or reduced. There is no need to design and manufacture radiation fins for each pin grid array with a different shape.
（４）上記（２）、（３）により、ピン形放熱フィンの
製造コストを低減することができる。(4) According to (2) and (3) above, the manufacturing cost of the pin-shaped radiation fin can be reduced.
〔実施例２〕
第９図および第１Ｏ図に示すように、本実施例２による
ピン形放熱フィンの製造方法は、被放熱体であるピング
リッドアレイ５の熱拡散板９の上面にあらかじめ多数の
孔１８を設けておき、上記孔１８内にマイクロピン１を
一本ずつ挿入することによって、熱拡散板９上で直接ピ
ン形放熱フィン３の組立てを行うものである。マイクロ
ピン１は、例えばかしめ、または接着剤（ろう材）によ
って孔１８内に固定される。あるいはマイクロピン１の
一端および孔１８の内部にそれぞれネジを設けて両者を
固定してもよい。[Example 2] As shown in FIG. 9 and FIG. The pin-shaped heat dissipating fins 3 are assembled directly on the heat diffusion plate 9 by providing holes 18 and inserting the micro pins 1 one by one into the holes 18. The micropin 1 is fixed in the hole 18 by caulking or adhesive (brazing material), for example. Alternatively, screws may be provided at one end of the micropin 1 and inside the hole 18 to fix the two.
以上、本発明者によってなされた発明を実施例に基づき
具体的に説明したが、本発明は前記実施例１．２に限定
されるものてはなく、その要旨を逸脱しない範囲で種々
変更可能であることはいうまでもない。The invention made by the present inventor has been specifically explained based on Examples above, but the present invention is not limited to Examples 1 and 2, and can be modified in various ways without departing from the gist thereof. It goes without saying that there is.
以上の説明では、主として本発明者によってなされた発
明をその背景となった利用分野である半導体集積回路装
置用の放熱フィンについて説明したか、本発明はそれに
限定されるものではなく、特に小形電子機器の冷却に用
いる放熱フィンに広く適用することができる。In the above description, the invention made by the present inventor has mainly been explained in relation to heat dissipation fins for semiconductor integrated circuit devices, which is the background field of application, but the present invention is not limited thereto, and is particularly applicable to small electronic devices. It can be widely applied to radiation fins used for cooling equipment.
本願において開示される発明のうち、代表的なものによ
って得られる効果を簡単に説明すれば、下記のとおりで
ある。Among the inventions disclosed in this application, the effects obtained by typical inventions are briefly described below.
放熱フィンを構成するピンを単体毎に製造し、上記ピン
の所定本数を被放熱体に接合することにより、従来のベ
ース・ピン一体形放熱フィンに比べてピンピッチを微細
化することができるので、放熱効率の高いピン形放熱フ
ィンが得られる。By manufacturing the pins that make up the heat dissipation fin individually and bonding a predetermined number of the pins to the heat dissipation target, the pin pitch can be made finer than the conventional base/pin integrated heat dissipation fin. A pin-shaped heat dissipation fin with high heat dissipation efficiency can be obtained.
また、寸法や形状の異なる被放熱体毎に放熱フィンを設
計、製造する必要がないので、低コストのピン形放熱フ
ィンが得られる。Further, since it is not necessary to design and manufacture a radiation fin for each heat radiation object having a different size or shape, a low-cost pin-shaped radiation fin can be obtained.
第１図は、本発明の一実施例であるピン形放熱フィンの
製造方法を示すマイクロピンの斜視図、第２図〜第４図
は、マイクロピンの別例をそれぞれ示す斜視図、
第５図は、第４図に示すマイクロピンの製造方法を示す
斜視図、
第６図は、ピン形放熱フィンの斜視図、第７図は、ピン
形放熱フィンの製造方法の別例を示す断面図、
第８図は、ピン形放熱フィンを装着したピングリッドア
レイの断面図、
第９図および第１０図は、ピン形放熱フィンの製造方法
の別例を工程順に示す斜視図である。
１・・・マイクロピン、２・・・接合部、３・・・ピン
形放熱フィン、４ａ・・・凹部、４ｂ・・・凸部、５・
・・ピングリッドアレイ、６・・・絶縁基板、７・・・
配線、８・・・リードピン、９・・・熱拡散板、１０．
１２・・・接着剤、１１・・・半導体チップ、１３・・
・ワイヤ、１４・・・ダム、１５・・・キャップ、１６
・・・キャピティ、１７・・・ソリコーンゲル、１８・
・・孔。
区 区
寸 ０転
銖
区
ｒつ
沫
綜 八
−ＬＩ 区
口
〈
第７図FIG. 1 is a perspective view of a micro pin showing a method of manufacturing a pin-shaped heat dissipation fin according to an embodiment of the present invention, FIGS. 2 to 4 are perspective views showing other examples of the micro pin, and FIG. The figure is a perspective view showing a method for manufacturing the micro pin shown in FIG. 4, FIG. 6 is a perspective view of a pin-shaped heat dissipation fin, and FIG. 7 is a cross-sectional view showing another example of the method for producing the pin-type heat dissipation fin. , FIG. 8 is a sectional view of a pin grid array equipped with pin-shaped heat dissipation fins, and FIGS. 9 and 10 are perspective views showing another example of the manufacturing method of pin-shaped heat dissipation fins in the order of steps. DESCRIPTION OF SYMBOLS 1... Micro pin, 2... Joint part, 3... Pin-shaped radiation fin, 4a... Concave part, 4b... Convex part, 5...
...Pin grid array, 6...Insulating substrate, 7...
Wiring, 8... Lead pin, 9... Heat diffusion plate, 10.
12...Adhesive, 11...Semiconductor chip, 13...
・Wire, 14...Dam, 15...Cap, 16
... Capity, 17... Soricone gel, 18.
...hole. Ward Ward size 0 rotation
Figure 7
Claims (1)
ピンの所定本数を被放熱体に接合することを特徴とする
ピン形放熱フィンの製造方法。 ２、前記ピンの一端に太径の接合部を設けることを特徴
とする請求項１記載のピン形放熱フィンの製造方法。 ３、前記ピンの一端に嵌合部を設け、前記嵌合部を介し
て所定本数をピン同士を接合することを特徴とする請求
項１記載のピン形放熱フィンの製造方法。 ４、前記ピンを前記被放熱体に設けたピン挿入孔に挿入
することを特徴とする請求項１記載のピン形放熱フィン
の製造方法。[Claims] 1. A method for manufacturing a pin-shaped heat dissipation fin, characterized in that each pin constituting the heat dissipation fin is produced individually, and a predetermined number of the pins are bonded to a heat dissipation target. 2. The method for manufacturing a pin-shaped heat dissipation fin according to claim 1, characterized in that a large-diameter joint portion is provided at one end of the pin. 3. The method of manufacturing a pin-shaped heat dissipation fin according to claim 1, characterized in that a fitting portion is provided at one end of the pin, and a predetermined number of pins are joined to each other via the fitting portion. 4. The method for manufacturing a pin-shaped heat dissipation fin according to claim 1, characterized in that the pin is inserted into a pin insertion hole provided in the heat dissipation target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2332606A JPH04199736A (en) | 1990-11-29 | 1990-11-29 | Manufacture of pin type radiation fin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2332606A JPH04199736A (en) | 1990-11-29 | 1990-11-29 | Manufacture of pin type radiation fin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04199736A true JPH04199736A (en) | 1992-07-20 |
Family
ID=18256830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2332606A Pending JPH04199736A (en) | 1990-11-29 | 1990-11-29 | Manufacture of pin type radiation fin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04199736A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419041A (en) * | 1992-08-04 | 1995-05-30 | Aqty Co., Ltd. | Process for manufacturing a pin type radiating fin |
| US5988266A (en) * | 1997-10-29 | 1999-11-23 | Eastman Kodak Company | Bonded cast, pin-finned heat sink and method of manufacture |
| US6026895A (en) * | 1998-02-06 | 2000-02-22 | Fujitsu Limited | Flexible foil finned heatsink structure and method of making same |
| WO2002070977A1 (en) * | 2001-03-01 | 2002-09-12 | Norsk Hydro Asa | Heat exchanger having fins |
| US7448439B2 (en) * | 2002-07-09 | 2008-11-11 | Fujitsu Limited | Heat exchanger |
| EP2242256A1 (en) * | 2008-02-06 | 2010-10-20 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| US7964958B2 (en) | 2007-02-20 | 2011-06-21 | Panasonic Corporation | Heatsink structure for solid-state image sensor |
| JP2015226039A (en) * | 2014-05-30 | 2015-12-14 | Ｄｏｗａメタルテック株式会社 | Comb tooth-shaped heat radiation pin member, manufacturing method of the same, and heat radiation plate with pins |
-
1990
- 1990-11-29 JP JP2332606A patent/JPH04199736A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419041A (en) * | 1992-08-04 | 1995-05-30 | Aqty Co., Ltd. | Process for manufacturing a pin type radiating fin |
| US5988266A (en) * | 1997-10-29 | 1999-11-23 | Eastman Kodak Company | Bonded cast, pin-finned heat sink and method of manufacture |
| US6026895A (en) * | 1998-02-06 | 2000-02-22 | Fujitsu Limited | Flexible foil finned heatsink structure and method of making same |
| US6223814B1 (en) | 1998-02-06 | 2001-05-01 | Fujitsu Limited | Flexible foil finned heatsink structure and method of making same |
| WO2002070977A1 (en) * | 2001-03-01 | 2002-09-12 | Norsk Hydro Asa | Heat exchanger having fins |
| US7448439B2 (en) * | 2002-07-09 | 2008-11-11 | Fujitsu Limited | Heat exchanger |
| US7964958B2 (en) | 2007-02-20 | 2011-06-21 | Panasonic Corporation | Heatsink structure for solid-state image sensor |
| EP2242256A1 (en) * | 2008-02-06 | 2010-10-20 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| EP2242256A4 (en) * | 2008-02-06 | 2012-04-18 | Panasonic Corp | Solid-state imaging device and method for manufacturing the same |
| JP2015226039A (en) * | 2014-05-30 | 2015-12-14 | Ｄｏｗａメタルテック株式会社 | Comb tooth-shaped heat radiation pin member, manufacturing method of the same, and heat radiation plate with pins |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI281238B (en) | Thermal enhanced package for block mold assembly | |
| JP3526788B2 (en) | Method for manufacturing semiconductor device | |
| US7772036B2 (en) | Lead frame based, over-molded semiconductor package with integrated through hole technology (THT) heat spreader pin(s) and associated method of manufacturing | |
| KR100442880B1 (en) | Stacked semiconductor module and manufacturing method thereof | |
| JPS60227457A (en) | Integrated circuit package | |
| JP2009540572A (en) | Method for manufacturing array package using substrate with improved thermal characteristics | |
| JP2001094020A (en) | Flip-chip pakcage provided with strip-shaped heat spreader and production method | |
| JP3367299B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| JP2009528699A (en) | No-lead package with heat dissipation means | |
| TWI301652B (en) | Semiconductor device and its manufacturing method | |
| JPH04199736A (en) | Manufacture of pin type radiation fin | |
| JPH11214606A (en) | Resin molded semiconductor device and lead frame | |
| JP2593702B2 (en) | Method for manufacturing semiconductor device | |
| JP3628058B2 (en) | Resin-sealed semiconductor device | |
| JP3655338B2 (en) | Resin-sealed semiconductor device and manufacturing method thereof | |
| JP3442721B2 (en) | Semiconductor device | |
| JP2004335493A (en) | Packaging structure of semiconductor device | |
| JP2000003981A (en) | Semiconductor device and its manufacture | |
| KR100487135B1 (en) | Ball Grid Array Package | |
| JPS61168926A (en) | Resin substrate | |
| JPH0812895B2 (en) | Semiconductor device mounted pin grid array package substrate | |
| JP2891426B2 (en) | Semiconductor device | |
| JP2001352008A (en) | Semiconductor device and its manufacturing method | |
| JPS61194753A (en) | Semiconductor device | |
| JP2003078101A (en) | Semiconductor device, lead frame provided to the same, and its manufacturing method |