JPH0419702B2 - - Google Patents

Info

Publication number
JPH0419702B2
JPH0419702B2 JP58003264A JP326483A JPH0419702B2 JP H0419702 B2 JPH0419702 B2 JP H0419702B2 JP 58003264 A JP58003264 A JP 58003264A JP 326483 A JP326483 A JP 326483A JP H0419702 B2 JPH0419702 B2 JP H0419702B2
Authority
JP
Japan
Prior art keywords
mercury
thin film
reaction tank
vapor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58003264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59127833A (ja
Inventor
Yutaka Hayashi
Mitsuyuki Yamanaka
Atsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP326483A priority Critical patent/JPS59127833A/ja
Publication of JPS59127833A publication Critical patent/JPS59127833A/ja
Publication of JPH0419702B2 publication Critical patent/JPH0419702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
JP326483A 1983-01-12 1983-01-12 励起気相析出法による薄膜の製造装置 Granted JPS59127833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP326483A JPS59127833A (ja) 1983-01-12 1983-01-12 励起気相析出法による薄膜の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP326483A JPS59127833A (ja) 1983-01-12 1983-01-12 励起気相析出法による薄膜の製造装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP15487989A Division JPH0637705B2 (ja) 1989-06-16 1989-06-16 直接励起気相析出法による薄膜の製造装置

Publications (2)

Publication Number Publication Date
JPS59127833A JPS59127833A (ja) 1984-07-23
JPH0419702B2 true JPH0419702B2 (fr) 1992-03-31

Family

ID=11552601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP326483A Granted JPS59127833A (ja) 1983-01-12 1983-01-12 励起気相析出法による薄膜の製造装置

Country Status (1)

Country Link
JP (1) JPS59127833A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218721A (ja) * 1983-05-27 1984-12-10 Ushio Inc 被膜形成方法
JPH01239919A (ja) * 1988-03-22 1989-09-25 Semiconductor Energy Lab Co Ltd プラズマ処理方法およびプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130369A (fr) * 1974-04-01 1975-10-15
JPS56124229A (en) * 1980-03-05 1981-09-29 Matsushita Electric Ind Co Ltd Manufacture of thin film
JPS57202740A (en) * 1981-06-05 1982-12-11 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130369A (fr) * 1974-04-01 1975-10-15
JPS56124229A (en) * 1980-03-05 1981-09-29 Matsushita Electric Ind Co Ltd Manufacture of thin film
JPS57202740A (en) * 1981-06-05 1982-12-11 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS59127833A (ja) 1984-07-23

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