JPH0419702B2 - - Google Patents
Info
- Publication number
- JPH0419702B2 JPH0419702B2 JP58003264A JP326483A JPH0419702B2 JP H0419702 B2 JPH0419702 B2 JP H0419702B2 JP 58003264 A JP58003264 A JP 58003264A JP 326483 A JP326483 A JP 326483A JP H0419702 B2 JPH0419702 B2 JP H0419702B2
- Authority
- JP
- Japan
- Prior art keywords
- mercury
- thin film
- reaction tank
- vapor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical class [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052753 mercury Inorganic materials 0.000 claims description 23
- 230000005284 excitation Effects 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 15
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 239000000376 reactant Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Toxicology (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP326483A JPS59127833A (ja) | 1983-01-12 | 1983-01-12 | 励起気相析出法による薄膜の製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP326483A JPS59127833A (ja) | 1983-01-12 | 1983-01-12 | 励起気相析出法による薄膜の製造装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15487989A Division JPH0637705B2 (ja) | 1989-06-16 | 1989-06-16 | 直接励起気相析出法による薄膜の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59127833A JPS59127833A (ja) | 1984-07-23 |
JPH0419702B2 true JPH0419702B2 (fr) | 1992-03-31 |
Family
ID=11552601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP326483A Granted JPS59127833A (ja) | 1983-01-12 | 1983-01-12 | 励起気相析出法による薄膜の製造装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59127833A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59218721A (ja) * | 1983-05-27 | 1984-12-10 | Ushio Inc | 被膜形成方法 |
JPH01239919A (ja) * | 1988-03-22 | 1989-09-25 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法およびプラズマ処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50130369A (fr) * | 1974-04-01 | 1975-10-15 | ||
JPS56124229A (en) * | 1980-03-05 | 1981-09-29 | Matsushita Electric Ind Co Ltd | Manufacture of thin film |
JPS57202740A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1983
- 1983-01-12 JP JP326483A patent/JPS59127833A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50130369A (fr) * | 1974-04-01 | 1975-10-15 | ||
JPS56124229A (en) * | 1980-03-05 | 1981-09-29 | Matsushita Electric Ind Co Ltd | Manufacture of thin film |
JPS57202740A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS59127833A (ja) | 1984-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6984595B1 (en) | Layer member forming method | |
US4509451A (en) | Electron beam induced chemical vapor deposition | |
US6013338A (en) | CVD apparatus | |
US6786997B1 (en) | Plasma processing apparatus | |
JP3415207B2 (ja) | 化学気相成長による金属薄膜形成方法 | |
JPH0419702B2 (fr) | ||
JP2626339B2 (ja) | 薄膜形成装置 | |
JPH0637705B2 (ja) | 直接励起気相析出法による薄膜の製造装置 | |
JPH0543393A (ja) | 炭素材料作製方法 | |
JPH0689455B2 (ja) | 薄膜形成方法 | |
JP2003281991A (ja) | 熱陰極及びこれを用いた放電装置 | |
JP3522738B2 (ja) | 化学気相成長による金属薄膜形成方法 | |
JP2562662B2 (ja) | アモルフアスシリコン膜の形成方法 | |
JP3991446B2 (ja) | 薄膜形成装置 | |
JPS63241185A (ja) | 金属薄膜の堆積方法 | |
JPS6383271A (ja) | ダイヤモンド状炭素膜の製造法 | |
JPH04105314A (ja) | 非晶質シリコンの製造方法 | |
JPH0978245A (ja) | 薄膜形成方法 | |
JPH0573046B2 (fr) | ||
JPH0941147A (ja) | プラズマcvd方法 | |
JPS61196528A (ja) | 薄膜形成方法 | |
JPH0717146Y2 (ja) | ウエハ処理装置 | |
JPH0294430A (ja) | 光cvd装置 | |
JP3366593B2 (ja) | 炭素または炭素を主成分とする膜の作製方法 | |
JPS61209987A (ja) | 紫外光照射気相成長装置 |