JPH04195990A - Memory device provided with battery backup - Google Patents

Memory device provided with battery backup

Info

Publication number
JPH04195990A
JPH04195990A JP2326404A JP32640490A JPH04195990A JP H04195990 A JPH04195990 A JP H04195990A JP 2326404 A JP2326404 A JP 2326404A JP 32640490 A JP32640490 A JP 32640490A JP H04195990 A JPH04195990 A JP H04195990A
Authority
JP
Japan
Prior art keywords
signal
power source
power supply
low
dynamic ram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2326404A
Other languages
Japanese (ja)
Inventor
Shuji Oda
修司 織田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2326404A priority Critical patent/JPH04195990A/en
Publication of JPH04195990A publication Critical patent/JPH04195990A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To attain a high density mounting as well as a reduction in cost by providing a signal switching circuit and a dynamic RAM which receives a second output signal after receiving a switched low periodic signal, switches a refresh form to a low electricity consuming mode and operates. CONSTITUTION:A power source detecting circuit (I) 4, when the voltage of a normal power source 1 starts going down, detects it, outputs a signal (b) to a power source switching circuit, and switches the power source of memory from the normal power source 1 to a battery 2. In addition, before performing the power source switching control, the detecting circuit 4 inputs to the dynamic RAM 10 with a signal (c) outputted from the power source detecting circuit (II) 6 as a trigger. A Row Address Strobe signal (h) is switched from a normal Row Address Strobe signal (f) to the low periodic signal (g) for the low electricity consuming mode which is an output from a clock generator 8. Thus, by the reduction in cost for a memory capacity which is the characteristic of the dynamic RAM 10, the memory device is constructed at low cost, and also the mounting area for an equal capacity is made small, and the high density mounting is attained.

Description

【発明の詳細な説明】[Detailed description of the invention] 【産業上の利用分野】[Industrial application field]

この発明は、低消費電力モードを備えたダイナミックR
AM採用によるバッテリバックアップ付きメモリ装置に
関するものである。
This invention provides a dynamic R with low power consumption mode.
The present invention relates to a memory device with battery backup using AM.

【従来の技術】[Conventional technology]

従来は、メモリ内容をバッテリ電源によって保持しよう
とする場合、ダイナミックRAMは一般に消費電力が多
いためにスタティックRAMを使用するというケースが
多かった。 例えば、従来のこの種装置として第3図に示すスタティ
ックRAMを用いたバッテリバックアップ付きメモリ装
置があった。 図において、lは通常状態において電力を供給するため
の通常電源、2は非常用のバッテリ、3は通常電源1、
バッテリ3の2つの電源切換回路、4は通常電源1の電
圧を検出する電源検知回路1.5はスタティックRAM
である。 次に動作について説明する。図中通常電源1の電源電圧
がある一定値より以下に低下すると、電源検知回路(I
)4がその電圧レベルを検出して電源切換え回路3に検
出情報を伝達する。そして電源切換回路3では、通常電
源1からバッテリ2に電源を切換えてスタティックRA
M5に常時電源を供給するようにしている。また、上記
制御とは逆に、通常電源1が一定値以上に復帰すると上
述と同様に電源検知回路(I)4でその電圧レヘルを検
知して、電源切換回路3でバッテリ2から通常電源lに
切換える。
Conventionally, when attempting to retain memory contents using battery power, static RAM has often been used because dynamic RAM generally consumes a large amount of power. For example, as a conventional device of this type, there is a memory device with battery backup using a static RAM as shown in FIG. In the figure, l is a normal power source for supplying power in normal conditions, 2 is an emergency battery, 3 is a normal power source 1,
Two power supply switching circuits for the battery 3; 4 is a power supply detection circuit 1 that detects the voltage of the normal power supply 1; and 5 is a static RAM.
It is. Next, the operation will be explained. In the figure, when the power supply voltage of the normal power supply 1 drops below a certain value, the power supply detection circuit (I
) 4 detects the voltage level and transmits detection information to the power supply switching circuit 3. Then, the power supply switching circuit 3 switches the power supply from the normal power supply 1 to the battery 2 and performs static RA.
I am trying to constantly supply power to M5. In addition, contrary to the above control, when the normal power supply 1 returns to a certain value or higher, the power supply detection circuit (I) 4 detects the voltage level as described above, and the power supply switching circuit 3 switches the normal power supply from the battery 2 to the normal power supply. Switch to

【発明が解決しようとする課B】[Problem B that the invention attempts to solve]

従来のバッテリバックアップ付きメモリ装置は、以上の
ように構成されているので、消費電力の少ないスタテッ
クRAMを用いる必要があり、該スタテックRAMはダ
イナミックRAMと同一デバイス技術で製作しているに
も拘らず約4分の1の記憶容量しか得ることができない
ため、メモリ容量当りの価格が高価となり、かつ実装面
積が大きくなるという課題があった。この発明は上記の
ような課題を解決するためになされたもので、低消費電
力モードを備えたダイナミックRAMを用い記憶容量当
りの価格を引下げると共に、実装面積を小さくできて高
密度実装を可能にしたバッテリバックアップ付きメモリ
装置を得ることを目的とする。
Conventional memory devices with battery backup are configured as described above, so it is necessary to use static RAM that consumes less power, even though static RAM is manufactured using the same device technology as dynamic RAM. Since only about a quarter of the storage capacity can be obtained, there are problems in that the price per memory capacity becomes high and the mounting area becomes large. This invention was made to solve the above problems, and uses a dynamic RAM with a low power consumption mode to reduce the price per storage capacity, reduce the mounting area, and enable high-density packaging. The purpose of this invention is to obtain a memory device with battery backup.

【課題を解決するための手段】[Means to solve the problem]

この発明におけるバッテリバックアップ付きメモリ装置
は、低消費電力モード機能を有するダイナミックRAM
に供給している通常電源が所定値以下に低下すると、電
源切換回路でバッテリに切換えると共に、モード切換信
号発生回路から出力される出力信号により信号切換回路
でローアドレスストローブ(Row Address 
5torobe)信号を低周期信号に切換えて前記ダイ
ナミックRAMのリフレッシュ形態を切換えるようにし
たものである。
The memory device with battery backup in this invention is a dynamic RAM having a low power consumption mode function.
When the normal power supplied to the
5torobe) signal to a low-period signal to switch the refresh mode of the dynamic RAM.

【作用】[Effect]

この発明に係るモード切換信号発生回路は、電源検知手
段で通常電源のレベル変化が検知されると低消費電力モ
ード機能を有するダイナミンクRAMのリフレッシュ形
態を切換え、低消費電力状態の記憶動作に移行するので
、通常電源の低下時、または回復時にも、該ダイナミ・
ツクRAMのメモリ内容を損ねることなくバツテリバ・
ンクアノプ動作を行う。
The mode switching signal generation circuit according to the present invention switches the refresh mode of a dynamink RAM having a low power consumption mode function when a change in the level of the normal power supply is detected by the power supply detection means, and shifts to a storage operation in a low power consumption state. Therefore, even when the normal power supply drops or recovers, the dynamism
It is possible to perform battery recovery without damaging the memory contents of the TsukRAM.
performs a nkuanopu movement.

【実施例】【Example】

以下、この発明の一実施例を図について説明する。図中
、第3図と同一の部分は同一の符号をもって図示した第
1図において、6は電源検知回路4と同様の電源検知回
路(I[)で、後述のモード切換信号発生回路7に情報
を伝達する。(ここで、電源検知回路4,6をまとめて
電源検知手段と略称する。)、7は第1の出力信号dと
第2の出力信号eを適当なタイミングで発生させるモー
ド切換信号発生回路、8は定周期信号を発生するクロッ
ク発生器、9はRow Address 5trobe
信号fと、低周期信号gのいずれか一方にスイッチング
させる信号切換回路、10は低消費電力モードを備えた
ダイナミックRAMである。 また信号aは通常電源1の電圧を信号線表示したもの、
信号すは電源検知回路(■)4から出力され電源電圧の
情報を電源切換回路3に伝える信号、信号Cは電源検知
回路(■)6から出力され前記同様電源電圧の情報をモ
ード切換信号発生回路7に伝える信号、信号dは信号f
、gのスイッチングを制御する信号、信号eはダイナミ
ックRAMl0を低消費電力の状態と通常の状態とに切
換えるための信号、信号fは通常状態の時にダイナミッ
クRAMl0に入力するRow AddressStr
obe信号、信号gはクロック発生器8より出力される
低周期信号、信号りは信号[又はgのいずれか一方に選
択された信号で、ダイナミ、りRAMl0に入力される
。 次に動作について説明する。まず通常状態において、電
源検知回路(■)4は通常電源1の電圧が低下をはじめ
ると、これを検知し、電源切換回路3に信号すを出力し
て通常電源1からバッテリ2にメモリの電源を切り換え
る。さらにその電源切換制御を行う手前で電源検知回路
(■)6より出力された信号Cをトリガーとして、ダイ
ナミックRAMl0に入力するRoiv Addres
s 5trobe信号りを、通常時のRow Addr
ess 5trobe信号rからクロック発生器8の出
力である低消費電力モード用の低周期信号gに切り換え
る。また、ダイナミックRAMl0を低消費電力モード
に切換えるために信号eをダイナミックRAMl0に入
力する2つの動作を行う。また、逆に、通常電源1が一
定値以上回復すると上記動作のスイッチングとは逆のス
イッチング動作を行う。つまり、ダイナミックRAMl
0に入力する信号りを信号gがら信号fに戻し、低消費
電力動作のための信号eを無効にする。続いてダイナミ
ンクRAMl0に供給される電源をバッテリ2から通常
電源1に戻す。 第2図は、上記動作のタイミングを表したタイムチャー
トである。図中の符号は第1図の信号線につけられてい
る符号と一致する。以下に各信号線の動作の遷移を説明
する。 通常電源lがある一定値より低下するとその電圧を電源
検知回路(■)6が検知して信号Cを出力する。ダイナ
ミックRAMl0を低消費電力モードに切換える場合、
モード切換信号発生回路7では、その出力を信号dから
信号eの順序で遷移させていく。そして、信号eが有意
になった段階でダイナミックRAMl0は低消費電力モ
ードに切換わる。また、逆に通常電源1がある一定値以
上に回復すると電源検知回路(■)6が、その電圧レベ
ルを検知して、信号Cを無効にし、続いて信号e、dの
順序で無効にしていく。ここで、信号dが有効になると
ダイナミックRAM10↓こ入力されるRow Add
ress 5trobe信号りは図に示すような低周期
のクロック信号gに切換ねり、RowAddress 
5trobeを他で制御する必要がなくなる。 なお、上記実施例では2組の電源検知回路4゜6を採用
しダイナミックRAMl0の電源切換え用と低消費電力
モード切換え信号発生用とに使い分けているが、これは
、電源切換えと他の信号発生のタイミング制御さえ行え
ば1つで代用してもよく上記実施例と同様の効果を奏す
る。
An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, the same parts as in FIG. 3 are denoted by the same reference numerals. In FIG. Communicate. (Here, the power supply detection circuits 4 and 6 are collectively referred to as power supply detection means.) 7 is a mode switching signal generation circuit that generates a first output signal d and a second output signal e at appropriate timing; 8 is a clock generator that generates a fixed period signal, 9 is a Row Address 5trobe
A signal switching circuit 10 switches between the signal f and the low-period signal g, and 10 is a dynamic RAM equipped with a low power consumption mode. In addition, signal a is the signal line display of the voltage of the normal power supply 1,
Signal S is a signal outputted from the power supply detection circuit (■) 4 and conveys power supply voltage information to the power supply switching circuit 3. Signal C is output from the power supply detection circuit (■) 6 and generates a mode switching signal with power supply voltage information as described above. The signal transmitted to circuit 7, signal d, is signal f
, g, a signal e is a signal for switching the dynamic RAM 10 between a low power consumption state and a normal state, and a signal f is a Row Address Str input to the dynamic RAM 10 in the normal state.
The obe signal and the signal g are low-period signals output from the clock generator 8, and the signal is a signal selected as either the signal [or g], and is input into the dynamic RAM 10. Next, the operation will be explained. First, in the normal state, the power supply detection circuit (■) 4 detects when the voltage of the normal power supply 1 starts to drop, and outputs a signal to the power supply switching circuit 3 to switch the memory power supply from the normal power supply 1 to the battery 2. Switch. Furthermore, before the power supply switching control is performed, the signal C output from the power supply detection circuit (■) 6 is used as a trigger to input the Roiv Address to the dynamic RAM 10.
s 5trobe signal, normal Row Addr
The ess 5trobe signal r is switched to the low cycle signal g for the low power consumption mode, which is the output of the clock generator 8. Further, in order to switch the dynamic RAM 10 to the low power consumption mode, two operations are performed to input the signal e to the dynamic RAM 10. Conversely, when the normal power supply 1 recovers to a certain value or more, a switching operation opposite to the switching operation described above is performed. In other words, dynamic RAM
The signal input to 0 is returned from signal g to signal f, and signal e for low power consumption operation is invalidated. Subsequently, the power supplied to the Dynamink RAM 10 is returned from the battery 2 to the normal power supply 1. FIG. 2 is a time chart showing the timing of the above operation. The symbols in the figure match the symbols attached to the signal lines in FIG. The transition of the operation of each signal line will be explained below. When the normal power supply l drops below a certain value, the power supply detection circuit (■) 6 detects the voltage and outputs a signal C. When switching dynamic RAMl0 to low power consumption mode,
The mode switching signal generation circuit 7 causes its output to transition in the order of the signal d to the signal e. Then, when the signal e becomes significant, the dynamic RAM 10 switches to the low power consumption mode. Conversely, when the normal power supply 1 recovers to a certain value or higher, the power supply detection circuit (■) 6 detects the voltage level and disables the signal C, and then disables the signals e and d in that order. go. Here, when the signal d becomes valid, the dynamic RAM 10↓ is input to the Row Add
Ress 5Trobe signal is switched to low-cycle clock signal g as shown in the figure, and RowAddress
There is no need to control the 5-trobe elsewhere. In the above embodiment, two sets of power supply detection circuits 4゜6 are used for switching the power supply of the dynamic RAM 10 and for generating a low power consumption mode switching signal. As long as timing control is performed, one may be used instead, and the same effect as in the above embodiment can be obtained.

【発明の効果】【Effect of the invention】

以上のようにこの発明によれば、通常電圧低下時のメモ
リのデータ保持をバッテリに切換えて行う場合のメモリ
動作を、低消費電力モード機能を有するダイナミックR
AMを採用し、電圧低下時のリフレッシュ動作を予め決
められた順序で制御信号を切換えて行うようにしたので
、スタティフクRAMに対するダイナミックRAMの特
長であるメモリ容量当りの低価格化によって安価に構成
できると共に、同−容量当りの実装面積が小となり高密
度実装が可能となる効果がある。
As described above, according to the present invention, the memory operation when switching to the battery to retain data in the memory during normal voltage drop can be performed using the dynamic R
By using AM, the refresh operation when the voltage drops is performed by switching control signals in a predetermined order, so it can be constructed at a low cost due to the low cost per memory capacity, which is the advantage of dynamic RAM compared to static RAM. At the same time, there is an effect that the mounting area per the same capacity becomes smaller and high-density mounting becomes possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例によるバッテリハックアン
プ付きメモリ装置の構成を示すブロック図、第2図は第
1図の装置の動作遷移を表すタイミングチャート、第3
図は従来のバッテリバンクアップ付きメモリ装置の構成
を示すブロック図である。 図において、1は通常電源、2はバッテリ、4は電源検
知回路(1)、6は電源検知回路(II)、(4,6は
電源検知手段)、7はモード切換信号発生回路、9は信
号切換回路、10はダイナミックRAMである。 なお、図中、同一符号は同一、又は相当部分を示す。
FIG. 1 is a block diagram showing the configuration of a memory device with a battery hack amplifier according to an embodiment of the present invention, FIG. 2 is a timing chart showing the operation transition of the device shown in FIG. 1, and FIG.
The figure is a block diagram showing the configuration of a conventional memory device with battery bank up. In the figure, 1 is a normal power supply, 2 is a battery, 4 is a power supply detection circuit (1), 6 is a power supply detection circuit (II), (4 and 6 are power supply detection means), 7 is a mode switching signal generation circuit, and 9 is a The signal switching circuit 10 is a dynamic RAM. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 通常電源の電圧が所定値以下に低下したことを検出し、
該通常電源からバッテリに切換えてメモリをバックアッ
プするバッテリバックアップ付きメモリ装置において、
前記電圧低下の検出信号によりタイミングの異る第1及
び第2の出力信号を発生するモード切換信号発生回路と
、前記第1の出力信号により通常動作のローアドレスス
トローブ信号から低周期信号に切換える信号切換回路と
、前記切換えられた低周期信号を受信後に前記第2出力
信号を受信して低消費電力モードにリフレッシュ形態を
切換え、動作するダイナミック・RAMとを備えたバッ
テリバックアップ付きメモリ装置。
Detects when the voltage of the normal power supply drops below a predetermined value,
In the memory device with battery backup that backs up the memory by switching from the normal power source to the battery,
a mode switching signal generation circuit that generates first and second output signals with different timings based on the voltage drop detection signal; and a signal that switches from a normal operation low address strobe signal to a low cycle signal based on the first output signal. A memory device with a battery backup, comprising: a switching circuit; and a dynamic RAM that operates by receiving the second output signal after receiving the switched low-period signal and switching the refresh mode to a low power consumption mode.
JP2326404A 1990-11-28 1990-11-28 Memory device provided with battery backup Pending JPH04195990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2326404A JPH04195990A (en) 1990-11-28 1990-11-28 Memory device provided with battery backup

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2326404A JPH04195990A (en) 1990-11-28 1990-11-28 Memory device provided with battery backup

Publications (1)

Publication Number Publication Date
JPH04195990A true JPH04195990A (en) 1992-07-15

Family

ID=18187415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2326404A Pending JPH04195990A (en) 1990-11-28 1990-11-28 Memory device provided with battery backup

Country Status (1)

Country Link
JP (1) JPH04195990A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131295A (en) * 1984-11-30 1986-06-18 Toshiba Corp Back-up device of dynamic ram

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131295A (en) * 1984-11-30 1986-06-18 Toshiba Corp Back-up device of dynamic ram

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