JPH04188723A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce contact resistance and fluctuation of resistance value by forming a second conductive layer having a layer structure of single or more layers after forming a contact hole and conducting the annealing process through irradiation with a laser beam. CONSTITUTION:An impurity diffused layer is formed as a first conductive layer on a silicon substrate 1, an insulating film 3 is formed thereon, a contact hole 4 is opened on the insulating film 3 and the annealing process is conducted with an eximer laser beam 5. Thereafter, an aluminium layer 6 containing silicon is deposited as a second conductive layer having a layer structure of at least single layer or more by the sputtering method and the layer is then patterned. After the contact hole 4 is formed as explained above, the annealing process is conducted by irradiation with the laser beam 5. Thereby, contact resistance and fluctuation of resistance value can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming contacts between conductive layers of a semiconductor device.

[Conventional technology] In the conventional technology, after forming a contact hole on an insulating film provided on a first conductive layer on a semiconductor substrate, a second conductive layer having a layer structure of at least one layer is formed. The method was common.

[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, when the size of contact holes becomes extremely small to sub-micron size with the progress of microfabrication technology, the resistance to tact increases and large variations occur. have The present invention is intended to solve these problems, and its purpose is to reduce the contact resistance value and its variation.

[Means for Solving Problem 11] A semiconductor device of the present invention includes forming a contact hole in an insulating film provided on a first conductive layer on a semiconductor substrate, and then performing an annealing treatment by irradiating laser light. After that, a second conductive layer having a layer structure of at least one layer is formed.

[Examples] The present invention will be described below based on Examples. FIG. 1 is a sectional view showing an embodiment of the present invention in the order of steps. Figure 1 (
In a), 1 is a silicon substrate, 2 is an impurity diffusion layer which is the first conductive layer, 3 is an insulating film, 4 is a contact hole opened in the insulating film, and 5 is an excimer laser irradiated for annealing treatment. -It is light. Figure 1(b) is 1
For example, after performing annealing treatment with excimer laser light, as a second conductive layer having a layer structure of at least one layer, aluminum containing 1% silicon as shown in 6 is deposited by a sputtering method, and then This is the one that has been edited. FIG. 2 is a histogram showing the measurement results of contact resistance according to the prior art and this embodiment. These are the results of measuring contact resistance with a contact size of 1 micron square using the Kelvin method, and the first conductive layer is an N-type diffusion layer, and the second conductive layer is aluminum containing 1% silicon. FIG. 2(a) shows the measurement results of contact resistance according to the conventional technique, and FIG. 2(b) shows the measurement results of contact resistance according to the present embodiment. As is clear from FIG. 2, according to the present invention, it is possible to significantly reduce the average value and variation in contact resistance.

By the way, in this embodiment, an impurity diffusion layer on a silicon substrate is used as an example of the first conductive layer.
It can be applied in exactly the same way to high melting point metals such as tungsten and molybdenum.

In addition, aluminum containing 1% silicon has been described as an example of the second conductive layer having a layer structure of at least one layer. The same applies to laminated wiring of high melting point metals such as tungsten and molybdenum, or aluminum containing copper and palladium, or high melting point metals such as titanium, titanium nitride, and titanium tungsten, and their compounds, and aluminum and aluminum alloys. Applicable.

[Effects of the Invention] As described above, according to the present invention, after the contact hole is formed, an annealing process is performed by irradiating the contact hole with laser light, thereby making it possible to reduce contact resistance and variation.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an embodiment of the present invention in the order of steps;
FIG. 2 is a histogram showing the measurement results of contact resistance according to the prior art and this embodiment. 1 Silicon substrate 2 Impurity diffusion layer 3 Insulating film 4 Contact hole 5 Laser light Aluminum containing 61% silicon or more Applicant Seiko Epson Corporation Representative Patent attorney Kizobe Suzuki (and 1 other person) Figure 1 (b)

Claims (1)

[Claims] After forming a contact hole in an insulating film provided on a first conductive layer on a semiconductor substrate, an annealing treatment is performed by irradiating a laser beam, and then a second conductive layer having a layer structure of at least one layer is formed. A method for manufacturing a semiconductor device, characterized in that: