JPH04181762A - Electronic component - Google Patents
Electronic componentInfo
- Publication number
- JPH04181762A JPH04181762A JP31069690A JP31069690A JPH04181762A JP H04181762 A JPH04181762 A JP H04181762A JP 31069690 A JP31069690 A JP 31069690A JP 31069690 A JP31069690 A JP 31069690A JP H04181762 A JPH04181762 A JP H04181762A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- heat
- leads
- bonding
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 230000006866 deterioration Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は、加熱方法によって配線パッド等の他の電子回
路要素に接合させるためのリードを備えたIC(集積回
路)や電子コンポネント等の電子部品に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention is applicable to electronic devices such as ICs (integrated circuits) and electronic components that are equipped with leads for bonding to other electronic circuit elements such as wiring pads by a heating method. Regarding parts.
「背景技術」
電子機器小型化の流れにあって、表面実装部品やベアチ
ップ等を実装するためのSMT (表面実装技術)やC
OB (チップオンボード)等の技術が開発されている
。これらの電子部品では、リードを配線基板の配線パッ
ド等に接合する場合、互いに位置合わせして精密に接合
する必要があり、従来はリードに加熱と加圧を同時に行
ってリードの接合を行っていた。“Background technology” With the trend toward miniaturization of electronic devices, SMT (surface mount technology) and C
Technologies such as OB (chip on board) are being developed. In these electronic components, when joining leads to wiring pads on wiring boards, it is necessary to align them with each other and join them precisely. Conventionally, leads are joined by applying heat and pressure to the leads at the same time. Ta.
しかしながら、部品実装の高密度化によってリードのピ
ッチが小さくなるにつれ、レーザー光の照射など光エネ
ルギーのみでリードを接合させる方法が考えられている
。However, as the pitch of leads becomes smaller due to higher density component mounting, methods of joining leads using only optical energy such as laser beam irradiation are being considered.
例えば、第8図に示すものはベアチップIC51を配線
基板52の配線パッド58上にTAB(Tape Au
tomated Bonding)実装した様子を示し
、第10図はフラットパッケージIC61を配線基板6
2の配線パッド63上に表面実装した様子を示している
。これらベアチップIC51やフラットパッケージ61
等の電子部品を実装する場合には、配線パッド53.8
3に予備ハンダ54.64を施しておき、IC51,6
1を配線基板52゜62の上に置いて位置合わせすると
共に各リード55.65を配線パッド53.63に位置
決めし、第9図及び第10図に示すように各リード55
゜65の上にレーザー光αを照射してスキャンさせ、レ
ーザー光αによりリード55.65を加熱してリード5
5.85と配線パッド53.63とをハンダ付けしてい
る。For example, in the case shown in FIG. 8, a bare chip IC 51 is placed on a wiring pad 58 of a wiring board 52 using TAB
Figure 10 shows how the flat package IC 61 is mounted on the wiring board 6.
This figure shows surface mounting on the wiring pad 63 of No. 2. These bare chip IC51 and flat package 61
When mounting electronic components such as
Apply preliminary solder 54.64 to IC 51, 6.
1 on the wiring board 52°62 and position each lead 55.65 on the wiring pad 53.63, as shown in FIGS. 9 and 10.
The laser beam α is irradiated onto the top of ゜65 and scanned, and the lead 55.65 is heated by the laser beam α and the lead 5 is
5.85 and wiring pad 53.63 are soldered.
しかし、リードは、通常、ハンダ付は時のハンダ漏れ性
を良好にし、耐腐食性を向上させ、さらに抵抗を小さく
するため、表面にメツキが施されており、表面が光沢性
となっている。一般に、リードのメツキに用いられてい
る金、銀、スズ等の金属(研磨面)は、第11図に示す
ように熱放射率εが小さくなるために吸熱性が悪く、し
かも光沢性の表面で光(赤外線)を反射してしまうので
、加熱効率が著しく低く、このためリードが加熱されに
くくなっている。この結果、光エネルギーのみによって
リードを接合させる方法にあっては、リードを接合させ
るのに充分な熱エネルギーを得るまでにICへ熱が伝導
し、ICの温度が上昇して熱劣化するおそれがあった。However, when soldering leads, the surface is usually plated to make the surface glossy in order to improve solder leakage, improve corrosion resistance, and further reduce resistance. . In general, the metals (polished surfaces) used for plating the leads, such as gold, silver, and tin, have poor heat absorption properties due to their low thermal emissivity ε, as shown in Figure 11, and have glossy surfaces. Since the lead reflects light (infrared rays), the heating efficiency is extremely low, making it difficult for the lead to heat up. As a result, in the method of bonding leads using only optical energy, heat is conducted to the IC before sufficient thermal energy is obtained to bond the leads, raising the temperature of the IC and causing thermal deterioration. there were.
また、ハンダ溶接後の冷却時にも、表面のメツキの熱放
射率が小さいため冷却固定に時間を要し、その間にリー
トが位置ずれを起こす恐れがあった。このため、狭ピッ
チのリードを狭ピッチの配線パッドに接合させる場合、
リードの位置ずれによってリート同志かショートする恐
れがあり、リード間のピッチを小さくする上で障害とな
っていた。Furthermore, during cooling after solder welding, since the heat emissivity of the plating on the surface is low, it takes time to cool and fix, and there is a risk that the REIT may become misaligned during that time. Therefore, when connecting narrow pitch leads to narrow pitch wiring pads,
Misalignment of the leads may cause a short circuit between the leads, which is an obstacle to reducing the pitch between the leads.
本発明は、叙上の従来例の欠点に鑑みてなされたもので
あり、その目的とするところは、レーザー光等の加熱の
みによる手段で接合させるためのリードの接合時の熱効
率を高め、より小さな熱容量で接合させることができる
ようにし、電子部品の位置ずれや熱劣化を防止すること
にある。The present invention has been made in view of the drawbacks of the conventional examples described above, and its purpose is to improve the thermal efficiency when joining leads by only heating such as laser light, and to improve the thermal efficiency. The purpose is to enable bonding with a small heat capacity and prevent positional displacement and thermal deterioration of electronic components.
[課題を解決するための手段]
本発明の電子部品は、他の電子回路要素と接続させるた
めのリードを備えた電子部品であって、リード表面の他
の電子回路要素と接合する接合領域以外の領域全体もし
くは少なくとも一部領域を熱放射率の高い材料で覆った
ことを特徴としている。[Means for Solving the Problems] The electronic component of the present invention is an electronic component that includes a lead for connection to another electronic circuit element, and includes a lead surface other than the bonding area where the other electronic circuit element is bonded. It is characterized in that the entire area or at least a portion of the area is covered with a material having high thermal emissivity.
また、前記熱放射率の高い材料としては、金属酸化物を
用いることかできる。Moreover, a metal oxide can be used as the material having a high thermal emissivity.
[作用]
本発明にあっては、リード表面の接合領域以外の領域全
体もしくは少なくとも一部領域を熱放射率の高い材料で
覆っているので、リードの接合領域を配線パッド等の他
の電子回路要素に接触させ、熱放射率の高い材料で覆わ
れた領域にレーザー光等の光(赤外線)エネルギーを照
射させると、光エネルギーが効率的に吸収され、短い時
間でリードと他の電子回路要素とな接合させることがで
きる。また、リードが熱放射率の高い材料で覆われてい
るので、接合直後の放熱が良好でリードの冷却速度も大
きい。[Function] In the present invention, since the entire area or at least a part of the area other than the bonding area on the lead surface is covered with a material with high thermal emissivity, the bonding area of the lead is covered with other electronic circuits such as wiring pads. When light (infrared) energy such as a laser beam is irradiated onto an area covered with a material with high thermal emissivity, the light energy is efficiently absorbed and the leads and other electronic circuit elements are exposed in a short period of time. It can be joined as follows. Furthermore, since the leads are covered with a material with high thermal emissivity, heat dissipation is good immediately after bonding, and the cooling rate of the leads is fast.
このため、リードの接合部に供給される熱エネルギーを
低減でき、リード接合直後の放熱性も良好であるので、
リードの接合時に電子部品の温度が高くならず、電子部
品の熱劣化を防止することができる。また、リード接合
に必要な熱エネルギーの低減によってレーザー光照射装
置等の熱源も低パワーのもので済み、省エネルギーが図
られる。Therefore, the thermal energy supplied to the lead joint can be reduced, and the heat dissipation immediately after the lead is joined is also good.
The temperature of the electronic component does not rise when the leads are joined, and thermal deterioration of the electronic component can be prevented. Furthermore, by reducing the thermal energy required for lead bonding, a low-power heat source such as a laser beam irradiation device can be used, resulting in energy savings.
また、リード表面が高熱放射率の材料で覆われていて接
合直後におけるリードの冷却が速いので、リードの位置
ずれも生じにくくなる。さらに、リードの位置ずれを防
止できるので、リード間のピッチを狭くしてもリード同
志のショートが起こりにくく、リードの狭ピッチ化が可
能になる。Furthermore, since the lead surface is covered with a material with high thermal emissivity and the lead is cooled quickly immediately after bonding, the lead is less likely to be misaligned. Furthermore, since misalignment of the leads can be prevented, even if the pitch between the leads is narrowed, short circuits between the leads are less likely to occur, making it possible to narrow the pitch of the leads.
また、高熱放射率の材料として金属酸化物を用いれば、
電気的絶縁性も有しているので、電子部品を配線基板等
に実装する工程において、リードがハンダブリッジ等の
ためにショー)・する恐れが低減する。また、金属リー
ドの表面の一部を酸化させるだけで安価に高熱放射率の
領域を形成することができる。In addition, if metal oxides are used as materials with high thermal emissivity,
Since it also has electrical insulating properties, it reduces the possibility that the leads will show up due to solder bridges, etc. in the process of mounting electronic components on wiring boards and the like. Furthermore, a region with high thermal emissivity can be formed at low cost by simply oxidizing a portion of the surface of the metal lead.
「実施例コ 以下、本発明の実施例な添付図に基づいて詳述する。"Example code" DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings.
第1図に本発明の一実施例の電子部品を示す。FIG. 1 shows an electronic component according to an embodiment of the present invention.
この電子部品では、ペアチップICIの電極パッド2の
上のバンブ3に金属製リード4の一端か接合されている
。このリード4は、金属芯材の表面にスズ、銀、金等の
メツキを施されたものであり、さらにリードの接合面4
aと反対側の面(上面)の全体には、金属酸化物などの
熱放射率εの高い材料からなる高熱放射率層5が形成さ
れている。In this electronic component, one end of a metal lead 4 is bonded to the bump 3 on the electrode pad 2 of the paired chip ICI. This lead 4 has a metal core plated with tin, silver, gold, etc. on the surface, and the joint surface 4 of the lead is plated with tin, silver, gold, etc.
A high thermal emissivity layer 5 made of a material with high thermal emissivity ε, such as a metal oxide, is formed on the entire surface (upper surface) opposite to a.
このペアチップICIを配線基板6の配線パッド7に実
装する場合には、予め配線バッド7上に予備ハンダ8を
施しておき、リード4をフィルムないしテープに止めら
れたペアチップICIを配線基板6の上に搬入し、予備
ハンダ8の上から配線パッド7上にリード4の接合面4
aを重ねて位置決めし、第1図及び第2図に示すように
高熱放射率層5の表面にレーザー光αを照射及びスキャ
ンさせてハンダ8を溶融させ、リード4を配線パッド7
にハンダ付けする。このとぎ、レーザー光αが接合部に
照射されると(レーザー光αの照射スポットを第2図に
示す。)、レーザー光(赤外線)αは高熱放射率層5か
ら効率的に吸収され、リード4の接合面4aから予備ハ
ンダ8へ熱を伝えて予備ハンダ8を短時間で溶融させる
。し・−サー光αの照射を停止させると、リード4の熱
は廃熱放射率層5がら空中へ速やかに放熱され、リード
4が冷却される。このため、ペアチップ丁CIが高温に
なる前に冷却され、その熱劣化か防止される。また、高
熱放射率層5によって熱吸収か良好となるので、出力の
小さなレーザー光照射装置を用いることができる。さら
に、ハンダ溶融後の熱冷却が速やかになるので、リード
4が配線パッド7から位置ずれしにくくなる。さらに、
べ7キツプICIの接合加工時のみならず、リード4か
らの輻射性が高いためにペアチップICIの駆動時にお
いてもペアチップICIの発熱をリード4から放熱させ
ることができ、ペアチップI C1の寿命を長く保たせ
ることができる。When mounting this paired chip ICI on the wiring pad 7 of the wiring board 6, pre-solder 8 is applied on the wiring pad 7 in advance, and the paired chip ICI with the leads 4 fixed to a film or tape is mounted on the wiring board 6. The bonding surface 4 of the lead 4 is placed on the wiring pad 7 from above the preliminary solder 8.
1 and 2, the surface of the high thermal emissivity layer 5 is irradiated and scanned with laser light α to melt the solder 8, and connect the leads 4 to the wiring pads 7.
solder to. Then, when the laser beam α is irradiated onto the joint (the irradiation spot of the laser beam α is shown in FIG. 2), the laser beam (infrared rays) α is efficiently absorbed from the high thermal emissivity layer 5, leading to Heat is transmitted from the bonding surface 4a of 4 to the preliminary solder 8 to melt the preliminary solder 8 in a short time. - When the irradiation of the radiation α is stopped, the heat of the lead 4 is quickly radiated into the air through the waste heat emissivity layer 5, and the lead 4 is cooled. Therefore, the pair of chips CI is cooled down before it reaches a high temperature, and its thermal deterioration is prevented. Furthermore, since the high thermal emissivity layer 5 provides good heat absorption, a laser beam irradiation device with a small output can be used. Furthermore, since the thermal cooling after melting the solder becomes rapid, the leads 4 are less likely to be displaced from the wiring pads 7. moreover,
The heat generated by the paired chip ICI can be dissipated from the leads 4 not only during the bonding process of the base 7-chip ICI, but also when the paired chip ICI is driven due to the high radiation from the lead 4, extending the life of the paired chip ICI. can be kept.
高熱放射率層5としては、上記のように例えば金属酸化
物を用いることができる。第3図には、各種金属(AQ
、 Ni、 Si、 Nb等)の酸化物の熱放射率εを
示しである。この図より明らかなように、金属醇化物の
熱放射率εは高く、例えばε〉0゜8ならばリード4の
メツキ面に較べて加熱効率が10倍に大ぎくなる。しか
も、一般にリード4のメツキには、スズや銀、金などが
用いられているので、これらのメツキ金属を酸化させる
ことにより、容易に金属酸化物の高熱放射率層5を形成
することができる。例えば、スズ、銀は容易に酸化可能
であり、リード4をペアチップ丁CIに取付ける前に予
めリード4のメツキ表面を電気化学的もしくは化学的に
酸化させておけばよい。また、酸化の深さは0.5Ln
もあれば十分である。このように、リード4の表面に金
属酸化物の層を形成しておけば、リード4表面の熱放射
率を高めて熱(赤外線)を吸収し易くし、かつ冷え易く
する効果に加え、その電気絶縁性のためにハンダブリッ
ジやリードの接触等による電気的なショート事故が低減
される。As the high thermal emissivity layer 5, for example, metal oxide can be used as described above. Figure 3 shows various metals (AQ
, Ni, Si, Nb, etc.). As is clear from this figure, the thermal emissivity ε of the metal molten metal is high. For example, if ε>0°8, the heating efficiency will be ten times greater than that of the plated surface of the lead 4. Moreover, since tin, silver, gold, or the like is generally used for plating the leads 4, the high thermal emissivity layer 5 of metal oxide can be easily formed by oxidizing these plating metals. . For example, tin and silver can be easily oxidized, and the plating surface of the lead 4 may be oxidized electrochemically or chemically before the lead 4 is attached to the paired chip CI. Also, the depth of oxidation is 0.5Ln
It is enough. In this way, forming a metal oxide layer on the surface of the lead 4 increases the thermal emissivity of the surface of the lead 4, making it easier to absorb heat (infrared rays) and cooling. Electrical insulation reduces electrical short-circuit accidents caused by solder bridges or lead contact.
高熱反射率層5は、金属酸化物に限るものでなく、これ
以外でも、グラファイト粉(ε=0.97)やカラス(
ε=0.9)、エナメル(εと0゜9〜0.95)、*
つo’)(ε#0.90−0.97)などのεの大きな
セラミックス、ゴム(ε=0.8〜0.95)やセルロ
ース樹脂(ε′−=0.7〜0.9)、黒色塗料(ε−
0,95)等のεの大きな化学合成品でもよく、これら
をリード4表面に塗布すればよい。The high heat reflectance layer 5 is not limited to metal oxides, and may also be made of graphite powder (ε=0.97) or glass (
ε=0.9), enamel (ε and 0°9~0.95), *
Ceramics with large ε such as (ε#0.90-0.97), rubber (ε=0.8-0.95) and cellulose resin (ε'-=0.7-0.9) , black paint (ε-
A chemical synthetic product with a large ε such as 0.95) may also be used, and these may be applied to the surface of the lead 4.
本発明によれば、ハンダ付は後に短時間でハンダを固化
させることがでとるので、リードの位置ずれが生じにく
くなる。このため、リードの幅を小さくして細線化し、
多数本のリードを狭ピッチで設けることが可能になる。According to the present invention, since soldering can be done by solidifying the solder in a short time afterwards, misalignment of the leads is less likely to occur. For this reason, we reduced the width of the lead and made it thinner.
It becomes possible to provide a large number of leads at a narrow pitch.
例えば、第4図に示すものは、幅W=30〜40tnの
リード4をp−70剛のピッチで設けた電子部品である
。このようにリード4を細線化すると、熱がリード4を
伝ってペアチップICI側へ逃げにくくなるので、高熱
放射率層5を設けた効果か接合部で顕著に表われ、接合
面4aのハンダ漏れ性が向上する。このため、第5図(
a)に示すような形状にフォーミングされているリード
4が加熱されてハンダ8か溶融すると、リード4の接合
面4a全体がハンダ8に漏れ、ついで第5図(b)のよ
うにり−1:4がハンダ8の漏れ性で配線バット7に吸
い付き、レーザー光αの照射を停止すると、第5図(b
)のようにリード4が配線バット7に吸い付いた状態で
ハンダ8が速やかに固化する。従って、リート4の位置
ずれが起こりに<<、狭ピッチのり一部4であってもシ
ョートさせることなく配線パッド7に接合させることが
できる。また、リード4を高熱放射率層5で覆ってあれ
ば、リード4を高密度で配置しである場合も、放熱を良
好にできる。For example, what is shown in FIG. 4 is an electronic component in which leads 4 having a width W of 30 to 40 tn are provided at a pitch of p-70 stiffness. When the leads 4 are made thinner in this way, it becomes difficult for heat to travel through the leads 4 and escape to the paired chip ICI side, so the effect of providing the high thermal emissivity layer 5 is noticeable at the joint and prevents solder leakage on the joint surface 4a. Improves sex. For this reason, Figure 5 (
When the lead 4 formed into the shape shown in a) is heated and the solder 8 melts, the entire joint surface 4a of the lead 4 leaks into the solder 8, and then the solder 8 melts as shown in FIG. 5(b). : 4 sticks to the wiring batt 7 due to the leakage of the solder 8, and when the irradiation of the laser beam α is stopped, as shown in Fig. 5 (b
), the solder 8 quickly solidifies with the lead 4 stuck to the wiring bat 7. Therefore, even if the REIT 4 is misaligned and the narrow pitch portion 4 is formed, it can be bonded to the wiring pad 7 without shorting. Further, if the leads 4 are covered with the high thermal emissivity layer 5, heat radiation can be improved even when the leads 4 are arranged at high density.
また、幅の大きなリードの場合であっても、第6図に示
すようにリード4に孔9をあけたり、第7図に示すよう
にリード4の両側にくびれ10を設けたりしてリード4
の断面積を部分的に小さくしても、接合部からペアチッ
プICI側への熱の移動を小さくすることができる。Furthermore, even in the case of a large lead width, the lead 4 can be made with holes 9 as shown in FIG. 6, or constrictions 10 on both sides of the lead 4 as shown in FIG.
Even if the cross-sectional area is partially reduced, the transfer of heat from the junction to the paired chip ICI side can be reduced.
高熱放射率層5は、リード4の接合面4aを残して表裏
両面に施してもよい。また、第6図に示すように、接合
部を含むレーザー光照射箇所のみに高熱放射率層5を設
けてもよい。The high thermal emissivity layer 5 may be applied to both the front and back surfaces of the leads 4, leaving only the bonding surfaces 4a. Alternatively, as shown in FIG. 6, the high thermal emissivity layer 5 may be provided only at the laser beam irradiation locations including the joints.
第8図に示すものは本発明のさらに別な実施例であって
、回路パターン11の先端部にバンブ13を有する配線
パッド7を設け、配線バット7及びその近傍を除いて配
線基板6のレーザー光照射領域を熱放射率の高い被膜1
2で覆っである。このため第8図に示すようにリード4
の接合部にレーサー光αを照射した時、配線基板6側か
らも、Aンダに熱を与えることかでと、接合後は、配線
基板6側からも速やかに放熱させることかできる。What is shown in FIG. 8 is still another embodiment of the present invention, in which a wiring pad 7 having a bump 13 is provided at the tip of a circuit pattern 11, and a laser beam on the wiring board 6 except for the wiring butt 7 and its vicinity is provided. Coat 1 with high thermal emissivity covers the light irradiation area
It is covered by 2. For this reason, as shown in Fig. 8, the lead 4
When the laser beam α is irradiated to the bonded portion of the Anda, heat is applied to the Anda from the wiring board 6 side, and after bonding, heat can be quickly dissipated from the wiring board 6 side as well.
なお、上記実施例では、リードをハンダ接合させる場合
について説明したが、本発明は、リードを配線バット等
に金属間接合させる場合に用いてもよく、またレーザー
光により加熱する場合に限らず、熱圧着のようなツール
加熱の場合に用いても有効である。In the above embodiments, the case where the leads are soldered is described, but the present invention may also be used when the leads are joined between metals to a wiring bat, etc., and is not limited to the case where the leads are heated with laser light. It is also effective in the case of tool heating such as thermocompression bonding.
[発明の効果]
本発明によれば、要するに、リードの接合時に電子部品
の温度が高くならず、電子部品の熱劣化を防止すること
ができる。また、レーザー光照射装置等の熱源も低パワ
ーのもので済み、省エネルギー化できる。また、接合直
後におけるリードの冷却か速いので、リートの位置ずれ
も生じにくくなる。さらに、リードの位置ずれを防止で
きるので、リード間のピッチを狭くしてもリード同志の
ショートが起こりにくく、リードの狭ピッチ化が可能に
なる。[Effects of the Invention] In short, according to the present invention, the temperature of the electronic component does not increase during lead bonding, and thermal deterioration of the electronic component can be prevented. Furthermore, the heat source such as the laser beam irradiation device can be of low power, resulting in energy savings. Furthermore, since the leads are cooled quickly immediately after bonding, the leads are less likely to be misaligned. Furthermore, since misalignment of the leads can be prevented, even if the pitch between the leads is narrowed, short circuits between the leads are less likely to occur, making it possible to narrow the pitch of the leads.
また、金属酸化物からなる高熱放射率層を形成すれば、
電気的絶縁性を有しているので、電子部品を配線基板等
に実装する工程において、リードがハンダブリッジ等の
ためにショートする恐れか低減する。また、金属リード
の表面の一部を酸化させるだけで安価に高熱放射率の軽
減を形成することかできる。In addition, if a high thermal emissivity layer made of metal oxide is formed,
Since it has electrical insulating properties, it reduces the risk of short-circuiting of leads due to solder bridges, etc. in the process of mounting electronic components on wiring boards and the like. Further, high thermal emissivity can be reduced at low cost by simply oxidizing a part of the surface of the metal lead.
第1図は本発明の一実施例を示す一部破断した正面図、
第2図は同上の電子部品のリードのうち1本のリードと
その周辺を示す平面図、第3図は数種の金属酸化物の熱
放射率を示す図、第4図は本発明の別な実施例を示す一
部破断した斜視図、第5図(a) (b)は同上のリー
ドのハンダ付は時の様子を示す部分拡大図、第6図は本
発明のさらに別な実施例におけるリードの構造を示す斜
視図、第7図は本発明のさらに別な実施例におけるリー
ドの一部を示す斜視図、第8図は本発明のさらに別な実
施例を示す一部破断した斜視図、第9図は従来例の一部
破断した斜視図、第10図は別な従来例を示す一部破断
した斜視図、第11図は数種の金属の熱放射率を示す図
である。
l・・・ペアチップIC
4・・・リード
4a・・・リードの接合面
5・・・高熱放射率層
7・・・配線パッドFIG. 1 is a partially cutaway front view showing one embodiment of the present invention;
Figure 2 is a plan view showing one of the leads of the electronic component and its surroundings, Figure 3 is a diagram showing the thermal emissivity of several types of metal oxides, and Figure 4 is another example of the present invention. FIGS. 5(a) and 5(b) are partially enlarged views showing how the same leads are soldered, and FIG. 6 is a partially broken perspective view showing an embodiment of the present invention. FIG. 7 is a perspective view showing a part of the lead in still another embodiment of the present invention, and FIG. 8 is a partially broken perspective view showing still another embodiment of the present invention. 9 is a partially broken perspective view of a conventional example, FIG. 10 is a partially broken perspective view showing another conventional example, and FIG. 11 is a diagram showing the thermal emissivity of several types of metals. . l...Pair chip IC 4...Lead 4a...Lead bonding surface 5...High thermal emissivity layer 7...Wiring pad
Claims (2)
えた電子部品であって、 リード表面の他の電子回路要素と接合する接合領域以外
の領域全体もしくは少なくとも一部領域を熱放射率の高
い材料で覆ったことを特徴とする電子部品。(1) An electronic component equipped with a lead for connection to another electronic circuit element, in which the entire or at least a portion of the area other than the bonding area where the lead surface is bonded to the other electronic circuit element has a thermal emissivity. An electronic component characterized by being covered with a high quality material.
とを特徴とする請求項1に記載の電子部品。(2) The electronic component according to claim 1, wherein the material with high thermal emissivity is a metal oxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31069690A JPH04181762A (en) | 1990-11-15 | 1990-11-15 | Electronic component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31069690A JPH04181762A (en) | 1990-11-15 | 1990-11-15 | Electronic component |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04181762A true JPH04181762A (en) | 1992-06-29 |
Family
ID=18008364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31069690A Pending JPH04181762A (en) | 1990-11-15 | 1990-11-15 | Electronic component |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04181762A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001127419A (en) * | 1999-10-26 | 2001-05-11 | Nec Saitama Ltd | Method for positioning terminal and land |
JP2007109700A (en) * | 2005-10-11 | 2007-04-26 | Nissan Motor Co Ltd | Whisker formation heat sink and its manufacturing method |
JP2013246133A (en) * | 2012-05-29 | 2013-12-09 | Micronics Japan Co Ltd | Joint pad, probe assembly, and method for manufacturing joint pad |
US11742216B2 (en) | 2016-04-15 | 2023-08-29 | Amkor Technology Singapore Holding Pte. Ltd. | System and method for laser assisted bonding of an electronic device |
-
1990
- 1990-11-15 JP JP31069690A patent/JPH04181762A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001127419A (en) * | 1999-10-26 | 2001-05-11 | Nec Saitama Ltd | Method for positioning terminal and land |
JP2007109700A (en) * | 2005-10-11 | 2007-04-26 | Nissan Motor Co Ltd | Whisker formation heat sink and its manufacturing method |
JP2013246133A (en) * | 2012-05-29 | 2013-12-09 | Micronics Japan Co Ltd | Joint pad, probe assembly, and method for manufacturing joint pad |
US11742216B2 (en) | 2016-04-15 | 2023-08-29 | Amkor Technology Singapore Holding Pte. Ltd. | System and method for laser assisted bonding of an electronic device |
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