JPH04174908A - Dielectric porcelain composition material - Google Patents
Dielectric porcelain composition materialInfo
- Publication number
- JPH04174908A JPH04174908A JP2301962A JP30196290A JPH04174908A JP H04174908 A JPH04174908 A JP H04174908A JP 2301962 A JP2301962 A JP 2301962A JP 30196290 A JP30196290 A JP 30196290A JP H04174908 A JPH04174908 A JP H04174908A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- pts
- main component
- composition material
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 6
- 239000002131 composite material Substances 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 4
- 239000000126 substance Substances 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 BaTi0+ Chemical class 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高い誘電率を有し、さらに絶縁破壊電圧、絶縁
抵抗が高く、また結晶粒径が小さい誘電体磁器組成物に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a dielectric ceramic composition having a high dielectric constant, high dielectric breakdown voltage and high insulation resistance, and small crystal grain size.
従来の技術
従来から、高い誘電率を有する誘電体磁器組成物として
、BaTi0.にBad、 Cab、 Ti0z、 Z
r0zなどを適当量添加したものが知られている。BACKGROUND ART Conventionally, BaTi0. Bad, Cab, Ti0z, Z
It is known that a suitable amount of r0z or the like is added.
発明が解決しようとする課題
しかし、これらの誘電体磁器組成物は結晶粒径が10〜
20μmと大きく、気孔率も高いため、積層セラミック
コンデンサのように誘電体厚みが薄い製品への応用は、
絶縁破壊電圧が低い、外部電極を形成するメツキ処理時
の絶縁破壊電圧および絶縁抵抗の低下などの課題があっ
た。Problems to be Solved by the Invention However, these dielectric ceramic compositions have crystal grain sizes of 10 to 10.
Because it is large at 20 μm and has a high porosity, it can be applied to products with thin dielectrics such as multilayer ceramic capacitors.
There were issues such as a low dielectric breakdown voltage and a decrease in dielectric breakdown voltage and insulation resistance during the plating process to form the external electrodes.
課題を解決するための手段
これらの課題を解決するために本発明は、一般式x B
aO−y Ti0z−z LaOx/zと表した時(た
だし、x+y+z−1,00) 、x、y、zが以下に
表す各点a、b、c、dで囲まれるモル比の範囲からな
る主成分100重量部に対し、NbtOsを0.3〜3
.0重量部とMn01を0.05〜0.25重量部含有
することを特徴とする誘電体磁器組成物を提供するもの
であ作用
第1図は本発明にかかる主成分の組成範囲を示す三元図
であり、組成範囲を限定した理由を第1図を参照しなが
ら説明する。まず、At+i域では誘電率が小さく、実
用的でなくなる。また、BeJf域ではキュリー点がマ
イナス側に大きくなりすぎ、温度特性の静電容量変化率
がプラス側に大きくはずれ実用的でなくなる。さらに、
C領域では焼結が著しく困難である。さらにまた、De
ff域では誘電率が小さく、実用的でなくなる。Means for Solving the Problems In order to solve these problems, the present invention provides the general formula x B
When expressed as aO-y Ti0z-z LaOx/z (however, x+y+z-1,00), x, y, and z consist of the molar ratio range surrounded by each point a, b, c, and d shown below. 0.3 to 3 NbtOs per 100 parts by weight of the main component
.. The purpose of the present invention is to provide a dielectric ceramic composition characterized by containing 0 parts by weight of Mn01 and 0.05 to 0.25 parts by weight of Mn01. The reason for limiting the composition range will be explained with reference to FIG. 1. First, the dielectric constant is small in the At+i region, making it impractical. Furthermore, in the BeJf region, the Curie point becomes too large on the negative side, and the capacitance change rate of the temperature characteristic deviates greatly on the positive side, making it impractical. moreover,
Sintering is extremely difficult in the C region. Furthermore, De
In the ff range, the dielectric constant is small, making it impractical.
上記の組成系、組成範囲にかかる本発明の構成によれば
、主成分に対しNbzOsを含有することにより、静電
容量と絶縁抵抗の積(CR積)および絶縁破壊電圧を向
上させる効果を有しているが、その含有率が主成分10
0重量部に対し、0.3重量部未満では含有効果はなく
、一方3,0重量部を超えるとキュリー点がマイナス側
にずれ誘電率を低下させる。また、主成分に対しMn0
zを含有することにより、CR積を大きくする効果を有
しているが、その含有率が主成分100重量部に対し、
0.05重量部未満あるいは0.25重量部を超えると
CR積が低下する。さらに、本発明の組成物はその結晶
粒径を2〜8μmとすることができる。According to the structure of the present invention related to the above composition system and composition range, by containing NbzOs in the main component, it has the effect of improving the product of capacitance and insulation resistance (CR product) and dielectric breakdown voltage. However, the content of the main component is 10
If the content is less than 0.3 parts by weight, there will be no effect, whereas if it exceeds 3.0 parts by weight, the Curie point will shift to the negative side and the dielectric constant will decrease. In addition, Mn0 for the main component
By containing z, it has the effect of increasing the CR product, but its content is 100 parts by weight of the main component,
If it is less than 0.05 part by weight or more than 0.25 part by weight, the CR product will decrease. Furthermore, the composition of the present invention can have a crystal grain size of 2 to 8 μm.
実施例 以下に、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.
出発原料には化学的に高純度のB a COs + T
10 z +Lazy、 NbtOsおよびMn0t
粉末を下記の第1表に示す組成比になるように秤量し、
めのうボールを備えたゴム内張りのボールミルに純水と
ともに入れ、湿式混合後、脱水乾燥した。この乾燥粉末
を高アルミナ質のルツボに入れ、空気中で1100’C
にて2時間仮焼した。この仮焼粉末を、めのうボールを
備えたゴム内張りのボールミルに純水とともに入れ、湿
式粉砕後、脱水乾燥した。この粉砕粉末に、有機バイン
ダーを加え、均質とした後、32メツツユのふるいを通
して整粒し、金型と油圧プレスを用いて成形圧力1to
n/cmで直径15−2厚み0.4 waに成形した。The starting material is chemically highly purified B a COs + T.
10 z +Lazy, NbtOs and Mn0t
Weigh the powder so that it has the composition ratio shown in Table 1 below,
The mixture was placed in a rubber-lined ball mill equipped with agate balls together with pure water, and after wet mixing, it was dehydrated and dried. This dry powder was placed in a high alumina crucible and heated to 1100'C in air.
It was calcined for 2 hours. This calcined powder was put into a rubber-lined ball mill equipped with agate balls together with pure water, wet-pulverized, and then dehydrated and dried. After adding an organic binder to this pulverized powder and making it homogeneous, it is sized through a 32-mesh sieve, and then molded under a pressure of 1 to 1 using a mold and hydraulic press.
It was molded to a diameter of 15-2 and a thickness of 0.4 wa.
次いで、この成形円板をジルコニア粉末を敷いたアルミ
ナ質のサヤに入れ、空気中にて下記の第1表に示す組成
比の誘電体磁器を得た。Next, this molded disk was placed in an alumina pod covered with zirconia powder, and dielectric porcelain having the composition ratio shown in Table 1 below was obtained in air.
このようにして得られた誘電体磁器円板は、厚みと直径
を測定し、誘電率、誘1を損失、静電容量温度特性測定
用試料は、誘電体磁器円板の両面全体に銀電極を焼き付
け、絶縁破壊電圧および絶縁抵抗測定用試料は、誘電体
Mi器内円板外周より1m内側まで銀電極を焼き付けた
。そして、誘電率、誘電損失、静電容量温度特性は、横
河・ヒユーレット・パラカード輛製デジタルLCRメー
タのモデル4274 Aを使用し、測定温度20″C2
測定電圧1.0Vr曽s、測定周波数1に臣での測定よ
り求めた。また、絶縁破壊電圧は、菊水電子工業味製の
高圧直流電源での測定より求めた。さらに、絶縁抵抗は
、タケダ理研工業■製の高抵抗計での測定より求めた。The thickness and diameter of the dielectric ceramic disc thus obtained were measured, and the dielectric constant, dielectric loss, and capacitance were measured using silver electrodes on both sides of the disc. As a sample for measuring dielectric breakdown voltage and insulation resistance, a silver electrode was baked to a depth of 1 m from the outer circumference of the inner disk of the dielectric Mi device. The dielectric constant, dielectric loss, and capacitance temperature characteristics were measured using a digital LCR meter model 4274A manufactured by Yokogawa/Heuret/Paracard at a measurement temperature of 20"C2.
It was determined from measurements at a measurement voltage of 1.0Vr and a measurement frequency of 1. Further, the dielectric breakdown voltage was determined by measurement using a high-voltage DC power supply manufactured by Kikusui Electronics Co., Ltd. Aji. Furthermore, the insulation resistance was determined by measurement using a high resistance meter manufactured by Takeda Riken Kogyo ■.
それから、誘電率は次式より求めた。Then, the dielectric constant was calculated from the following formula.
K−143,8XCoXt/D2
K :誘電率
Co:20°Cでの静電容量(pF)
D ;誘電体磁器円板の直径(m)
t :誘電体磁器円板の厚み(11111)また、絶縁
破壊電圧は次式より求めた。K-143,8XCoXt/D2 K: Dielectric constant Co: Capacitance at 20°C (pF) D: Diameter of dielectric ceramic disc (m) t: Thickness of dielectric ceramic disc (11111) The dielectric breakdown voltage was calculated from the following formula.
8.1=BO/l B1:絶縁破壊電圧(kV/簡) BO:絶縁破壊電圧(kν) さらに、絶縁抵抗は、CR積として次式より求めた。8.1=BO/l B1: Breakdown voltage (kV/simplified) BO: Breakdown voltage (kν) Furthermore, the insulation resistance was determined as a CR product using the following formula.
CR=CoXRO/10”
CR:CR積(Mn・pF)
RO:絶縁抵抗(Ω)
さらにまた、結晶粒径は、倍率400での光学顕微鏡観
察より求めた。試験条件および試験結果を下記の第1表
に併せて示す。CR=CoXRO/10" CR: CR product (Mn pF) RO: Insulation resistance (Ω) Furthermore, the crystal grain size was determined by optical microscope observation at a magnification of 400. The test conditions and test results are as follows. It is also shown in Table 1.
(以下余白)
なお、実施例における誘電体磁器の作製方法では、Ba
CO3,Ti0z、 LatC13,NbzO6および
MnO,を使用したが、この方法に限定されるものでは
なく、所望の組成比になるようにBaTi0+などの化
合物、あるいは炭酸塩、水酸化物など、空気中での加熱
により、Bad、 TiO2,La20. NbzOs
およびMn0zとなる化合物を使用しても実施例と同程
度の特性を得ることができる。(Left below) In addition, in the method for producing dielectric ceramic in the example, Ba
Although CO3, Ti0z, LatC13, NbzO6 and MnO were used, the method is not limited to this method. Compounds such as BaTi0+, carbonates, hydroxides, etc., were used in the air to obtain the desired composition ratio. By heating Bad, TiO2, La20. NbzOs
Even if a compound serving as Mn0z is used, properties comparable to those of the example can be obtained.
また、一般に使用されている工業用BaTrOsのBa
/Ti比は、0.98以上であり、BaTi0iを出発
原料として使用した場合、不足分のTiO□を添加して
も実施例と同程度の特性を得ることができる。In addition, the BaTrOs of commonly used industrial BaTrOs
/Ti ratio is 0.98 or more, and when BaTiOi is used as a starting material, properties comparable to those of the examples can be obtained even if the insufficient amount of TiO□ is added.
さらに、主成分をあらかじめ仮焼し、副成分を添加して
も実施例と同程度の特性を得ることができる。Furthermore, even if the main component is calcined in advance and the subcomponents are added, properties comparable to those of the examples can be obtained.
さらにまた、誘電体磁器用として一般に使用される工業
用原料の酸化チタン、例えばチタン工業蛛製酸化チタン
KA−10、古河鉱業■制酸化チタンFA−55Wには
最大0.45重量%のNb2Olが含まれるが、これら
の酸化チタンを使用して主成分の誘電体磁器を作製して
も主成分100重蓋%に対して、NbzOsの含有量は
最大で0.17!量%であり、本発明の範囲外であるが
、工業用原料の酸化チタン中のNb2O2量を考慮し、
不足分のNb2o、を含有させることにより、実施例と
同程度の特性を得ることができる。Furthermore, titanium oxide, which is an industrial raw material commonly used for dielectric porcelain, such as titanium oxide KA-10 manufactured by Titan Industrial Hachi Co., Ltd. and titanium oxide FA-55W manufactured by Furukawa Mining Co., Ltd., contains up to 0.45% by weight of Nb2Ol. However, even if dielectric porcelain is made using these titanium oxides as the main component, the NbzOs content is at most 0.17 per 100% of the main component! Although it is outside the scope of the present invention, considering the amount of Nb2O2 in titanium oxide as an industrial raw material,
By containing the insufficient amount of Nb2o, properties comparable to those of the examples can be obtained.
それから、上述の基本組成のほかに、ZnO。Then, in addition to the basic composition mentioned above, ZnO.
SiO□1FezO,、など、一般にフラックスと考え
られている塩If、 M化物などを特性を損なわない範
囲で加えることもできる。Salts If, M compounds, etc., which are generally considered to be fluxes, such as SiO□1FezO, etc., can also be added within a range that does not impair the properties.
発明の効果
以上のように本発明によれば、高い誘電率を有し、さら
に絶縁破壊電圧および絶縁抵抗が高く、また結晶粒径が
小さいため誘電体厚みを薄くでき、製品の小型化、大容
量化が可能である。Effects of the Invention As described above, the present invention has a high dielectric constant, high dielectric breakdown voltage and high insulation resistance, and has a small crystal grain size, so the dielectric thickness can be made thinner and the product can be made smaller and larger. It is possible to increase the capacity.
第1図は本発明にかかる組成範囲を示す三元図である。 FIG. 1 is a ternary diagram showing the composition range according to the present invention.
Claims (1)
2と表した時(ただし、x+y+z=1.00)、x,
y,zが以下に表す各点a,b,c,dで囲まれるモル
比の範囲からなる主成分100重量部に対し、Nb_2
O_5を0.3〜3.0重量部とMnO_2を0.05
〜0.25重量部含有することを特徴とする誘電体磁器
組成物。General formula xBaO-yTiO_2-zLaO_3_/_
2 (however, x+y+z=1.00), x,
For 100 parts by weight of the main component, where y and z are in the range of molar ratios surrounded by points a, b, c, and d shown below, Nb_2
0.3 to 3.0 parts by weight of O_5 and 0.05 parts of MnO_2
A dielectric ceramic composition characterized in that it contains ~0.25 parts by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2301962A JPH04174908A (en) | 1990-11-06 | 1990-11-06 | Dielectric porcelain composition material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2301962A JPH04174908A (en) | 1990-11-06 | 1990-11-06 | Dielectric porcelain composition material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04174908A true JPH04174908A (en) | 1992-06-23 |
Family
ID=17903220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2301962A Pending JPH04174908A (en) | 1990-11-06 | 1990-11-06 | Dielectric porcelain composition material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04174908A (en) |
-
1990
- 1990-11-06 JP JP2301962A patent/JPH04174908A/en active Pending
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