JPH06267331A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH06267331A JPH06267331A JP5056685A JP5668593A JPH06267331A JP H06267331 A JPH06267331 A JP H06267331A JP 5056685 A JP5056685 A JP 5056685A JP 5668593 A JP5668593 A JP 5668593A JP H06267331 A JPH06267331 A JP H06267331A
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- bao
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は高い誘電率を有し、かつ
誘電損失が小さく、さらに絶縁破壊電圧、絶縁抵抗が大
きく、また結晶粒径が小さい誘電体磁器組成物に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition having a high dielectric constant, a small dielectric loss, a large dielectric breakdown voltage and a large insulation resistance, and a small crystal grain size.
【0002】[0002]
【従来の技術】従来から、高い誘電率を有する誘電体磁
器組成物として、BaTiO3にBaO、CaO、Ti
O2、ZrO2などを適当量添加したものが知られてい
る。2. Description of the Related Art Conventionally, as a dielectric ceramic composition having a high dielectric constant, BaTiO 3 , BaO, CaO, Ti has been used.
It is known that O 2 and ZrO 2 are added in appropriate amounts.
【0003】[0003]
【発明が解決しようとする課題】しかし、これらの誘電
体磁器組成物は結晶粒径が10〜20μmと大きく、気
孔率も高いため、積層セラミックコンデンサのように誘
電体厚みが薄い製品への応用には、誘電損失が大きくな
る、絶縁破壊電圧が低い、外部電極を形成するメッキ処
理時の絶縁破壊電圧および絶縁抵抗が低下するなどの課
題があった。However, since these dielectric ceramic compositions have a large crystal grain size of 10 to 20 μm and a high porosity, they are applied to products having a thin dielectric thickness such as a laminated ceramic capacitor. Have problems such as increased dielectric loss, low dielectric breakdown voltage, and reduced dielectric breakdown voltage and insulation resistance during plating processing for forming external electrodes.
【0004】[0004]
【課題を解決するための手段】これらの課題を解決する
ために本発明は、一般式としてx[(BaO)(1-k-m
-n)(MgO)k(CaO)m(SrO)n]・yTiO2
・zNdO3/2で表され、m=0、n=0でkの値が
0.001≦k≦0.100の範囲にある組成を有し、
かつx、yおよびzはモル比を表し、x+y+z=1で
x、y、zの値が、(表1)に示すa、b、c、dで囲
まれるモル比の範囲からなる組成を有し、さらに副成分
としてマンガン化合物をMnO2の形に換算して0.0
1〜1.00重量部含有してなる誘電体磁器組成物を提
供するものである。In order to solve these problems, the present invention uses x [(BaO) (1-km
-n) (MgO) k (CaO) m (SrO) n ] .yTiO 2
Represented by zNdO 3/2 , having a composition in which m = 0, n = 0 and the value of k is in the range of 0.001 ≦ k ≦ 0.100,
X, y and z represent a molar ratio, and x + y + z = 1, and the composition of x, y and z is in the range of molar ratios surrounded by a, b, c and d shown in (Table 1). Then, the manganese compound is converted into the form of MnO 2 as an auxiliary component and converted to 0.0.
The present invention provides a dielectric ceramic composition containing 1 to 1.00 parts by weight.
【0005】また本発明は、上記一般式において、n=
0でkおよびmの値がそれぞれ、0.001≦k≦0.
100、0.005≦m≦0.200の範囲からなる組
成を有する誘電体磁器組成物、あるいは上記一般式にお
いて、m=0でkおよびnの値がそれぞれ、0.001
≦k≦0.100、0.005≦n≦0.200の範囲
からなる組成を有する誘電体磁器組成物、もしくは上記
一般式において、k=0でmおよびnの値がそれぞれ、
0.005≦m≦0.200、0.005≦n≦0.2
00の範囲からなる組成を有する誘電体磁器組成物、さ
らには上記一般式において、k、mおよびnの値がそれ
ぞれ、0.001≦k≦0.100、0.005≦m≦
0.200、0.005≦n≦0.200の範囲からな
る組成を有する誘電体磁器組成物を提供するものであ
る。さらにはまた、副成分としてニオブ酸化物をNb2
O5の形に換算して0.3〜3.0重量部添加してなる
誘電体磁器組成物を提供するものである。According to the present invention, in the above general formula, n =
0 and the values of k and m are 0.001 ≦ k ≦ 0.
100, a dielectric ceramic composition having a composition in the range of 0.005 ≦ m ≦ 0.200, or in the above general formula, when m = 0, the values of k and n are 0.001 respectively.
Dielectric ceramic composition having a composition in the range of ≦ k ≦ 0.100, 0.005 ≦ n ≦ 0.200, or in the above general formula, when k = 0, the values of m and n are respectively:
0.005 ≦ m ≦ 0.200, 0.005 ≦ n ≦ 0.2
In the above general formula, the values of k, m and n are 0.001 ≦ k ≦ 0.100 and 0.005 ≦ m ≦, respectively.
The present invention provides a dielectric ceramic composition having a composition of 0.200 and 0.005 ≦ n ≦ 0.200. Furthermore, niobium oxide is added as a subcomponent to Nb 2
The present invention provides a dielectric ceramic composition obtained by adding 0.3 to 3.0 parts by weight in terms of O 5 .
【0006】[0006]
【作用】この構成により、BaOをMgOで置換するこ
とにより、誘電損失を小さくし、静電容量と絶縁抵抗の
積(CR積)を大きくすることとなる。With this structure, by replacing BaO with MgO, the dielectric loss is reduced and the product of the capacitance and the insulation resistance (CR product) is increased.
【0007】また、BaOをCaOで置換することによ
り、誘電損失を小さくすることとなり、BaOをSrO
で置換することにより、誘電率を下げずに誘電損失を小
さくし、静電容量と絶縁抵抗の積(CR積)を大きくす
ることから、これらの組み合わせにより誘電率が高く、
誘電損失が小さく、CR積を大きくすることとなる。By replacing BaO with CaO, the dielectric loss is reduced, and BaO is replaced with SrO.
By replacing with, the dielectric loss is reduced without lowering the dielectric constant, and the product of the capacitance and the insulation resistance (CR product) is increased. Therefore, the combination of these results in a high dielectric constant,
The dielectric loss is small and the CR product is large.
【0008】また、副成分として、マンガン化合物を含
有することにより、CR積を大きくする効果を有してお
り、その含有率が主成分100重量部に対し、MnO2
換算で0.01重量部未満あるいは1.00重量部を越
えるとCR積が低下することとなる。The inclusion of a manganese compound as an auxiliary component has the effect of increasing the CR product, and the content ratio of MnO 2 is 100 parts by weight of the main component.
If it is less than 0.01 parts by weight or more than 1.00 parts by weight, the CR product will decrease.
【0009】さらに、副成分としてニオブ酸化物を添加
することにより、CR積と絶縁破壊強度を大きくするこ
ととなる。Further, by adding niobium oxide as a sub ingredient, the CR product and the dielectric breakdown strength are increased.
【0010】さらにまた、これらの構成により、結晶粒
径が小さい誘電体磁器が得られるため誘電体厚みを薄く
でき、製品の小型化、大容量化が可能である。Furthermore, with these structures, a dielectric ceramic having a small crystal grain size can be obtained, so that the dielectric thickness can be reduced, and the product can be downsized and the capacity can be increased.
【0011】[0011]
(実施例1)出発原料には化学的に高純度のBaC
O3、MgO、TiO2、Nd2O3およびMnO2粉末を
下記の(表2)に示す組成比になるように秤量し、めの
うボールを備えたゴム内張りのボールミルに純水ととも
に入れ、湿式混合後、脱水乾燥した。この乾燥粉末を高
アルミナ質のルツボに入れ、空気中で1100℃にて2
時間仮焼した。この仮焼粉末を、めのうボールを備えた
ゴム内張りのボールミルに純水とともに入れ、湿式粉砕
後、脱水乾燥した。この粉砕粉末に、有機バインダーを
加え、均質とした後、32メッシュのふるいを通して整
粒し、金型と油圧プレスを用いて成形圧力1t/cm2で
直径15mm、厚み0.4mmに成形した。次いで、この成
形円板をジルコニア粉末を敷いたアルミナ質のサヤに入
れ、空気中にて(表2)に示す焼成温度で2時間焼成
し、(表2)に示す組成比の誘電体磁器円板を得た。Example 1 As a starting material, chemically pure BaC is used.
O 3 , MgO, TiO 2 , Nd 2 O 3 and MnO 2 powders were weighed so as to have the composition ratios shown in (Table 2) below, put into a rubber-lined ball mill equipped with agate balls together with pure water, and wet. After mixing, it was dehydrated and dried. This dry powder was placed in a crucible of high alumina quality, and the powder was placed in air at 1100 ° C. for 2 hours.
I calcined for an hour. This calcined powder was put into a rubber-lined ball mill equipped with agate balls together with pure water, wet pulverized, and then dehydrated and dried. An organic binder was added to this pulverized powder to make it homogenous, and then the powder was sized through a 32 mesh sieve and molded into a diameter of 15 mm and a thickness of 0.4 mm at a molding pressure of 1 t / cm 2 using a mold and a hydraulic press. Next, this molded disc is put into an alumina-made sheath coated with zirconia powder, and fired in air at a firing temperature shown in (Table 2) for 2 hours to obtain a dielectric ceramic circle having a composition ratio shown in (Table 2). I got a plate.
【0012】このようにして得られた誘電体磁器円板
は、厚みと直径を測定し、誘電率、誘電損失、静電容量
温度特性測定用試料は、誘電体磁器円板の両面全体に銀
電極を焼き付け、絶縁破壊電圧および絶縁抵抗測定用試
料は、誘電体磁器円板の外周より1mm内側まで銀電極を
焼き付けた。そして、誘電率、誘電損失、静電容量温度
特性は、横河ヒューレット・パッカード(株)製デジタ
ルLCRメータのモデル4274Aを使用し、測定温度
20℃、測定電圧1Vrms、測定周波数1KHzでの測定よ
り求めた。The thickness and diameter of the dielectric ceramic disk thus obtained were measured, and the samples for measuring the dielectric constant, dielectric loss and capacitance temperature characteristic were silver on both sides of the dielectric ceramic disk. The electrodes were baked, and for the samples for measuring the dielectric breakdown voltage and the insulation resistance, the silver electrodes were baked to 1 mm inside from the outer circumference of the dielectric ceramic disk. The dielectric constant, the dielectric loss, and the capacitance-temperature characteristic were measured by using a Yokogawa Hewlett-Packard Co., Ltd. digital LCR meter model 4274A at a measurement temperature of 20 ° C., a measurement voltage of 1 Vrms, and a measurement frequency of 1 KHz. I asked.
【0013】なお、静電容量温度変化率は、20℃を基
準温度とし−25℃〜+85℃の温度範囲内の任意の測
定温度における静電容量との変化率を表している。変化
率は次式より求めた。The rate of change in capacitance temperature represents the rate of change with capacitance at any measurement temperature within the temperature range of -25 ° C to + 85 ° C, with 20 ° C as the reference temperature. The rate of change was calculated from the following formula.
【0014】dC=(CT−CO)/CO×100 dC:静電容量温度変化率(%) CT:T℃での静電容量(pF) CO:20℃での静電容量(pF) そして、誘電率は次式より求めた。DC = (C T -C O ) / C O × 100 dC: Capacitance temperature change rate (%) C T : Capacitance at T ° C. (pF) C O : Electrostatic at 20 ° C. Capacitance (pF) Then, the dielectric constant was obtained from the following equation.
【0015】K=143.8×CO×t/D2 K:誘電率 CO:20℃での静電容量(pF) D:誘電体磁器円板の直径(mm) t:誘電体磁器円板の厚み(mm) また、絶縁破壊電圧は菊水電子工業(株)製の高圧直流
電源PHS35K−3形を使用し、試料をシリコンオイ
ル中に入れ、昇圧速度50V/sにより測定し、次式よ
り誘電体1mm当りの絶縁破壊強度として求めた。K = 143.8 × C O × t / D 2 K: Dielectric constant C O : Capacitance (pF) at 20 ° C. D: Diameter of dielectric ceramic disk (mm) t: Dielectric ceramic Disc thickness (mm) The breakdown voltage was measured by using a high voltage DC power supply PHS35K-3 type manufactured by Kikusui Electronics Co., Ltd., putting the sample in silicone oil, and measuring it at a boosting speed of 50 V / s. It was calculated from the formula as the dielectric breakdown strength per 1 mm of the dielectric.
【0016】B1=BO/t B1:絶縁破壊強度(KV/mm) BO:絶縁破壊電圧(KV) さらに、絶縁抵抗は、タケダ理研(株)製の高抵抗計を
使用し、測定電圧50V.DC、測定時間1分間による
測定より求め、CR積として次式より求めた。B 1 = B O / t B 1 : Dielectric breakdown strength (KV / mm) B O : Dielectric breakdown voltage (KV) Further, the insulation resistance is measured by using a high resistance meter manufactured by Takeda Riken Co., Ltd. Measurement voltage 50V. It was obtained from the measurement at DC for 1 minute, and the CR product was obtained from the following equation.
【0017】CR=CO×RO/1012 CR:CR積(MΩ・μF) CO:20℃での静電容量(F) RO:絶縁抵抗(Ω) さらにまた、結晶粒径は、倍率400での光学顕微鏡観
察より求めた。上記測定結果を試料番号1〜16別に
(表3)に示す。CR = C O × R O / 10 12 CR: CR product (MΩ · μF) C O : capacitance at 20 ° C. (F) R O : insulation resistance (Ω) Further, the crystal grain size is , And was obtained by observation with an optical microscope at a magnification of 400. The measurement results are shown in (Table 3) for each of the sample numbers 1 to 16.
【0018】[0018]
【表2】 [Table 2]
【0019】[0019]
【表3】 [Table 3]
【0020】図1は本発明にかかる主成分の組成範囲を
示す三元図であり、主成分の組成範囲を限定した理由を
図1を参照しながら説明する。すなわち、A領域では誘
電率が小さく、実用的でなくなる。また、B領域ではキ
ュリー点がマイナス側に大きくなりすぎ、温度特性の静
電容量温度変化率がプラス側に大きくはずれ実用的でな
くなる。さらに、C領域では焼結が著しく困難である。
さらにまた、D領域では誘電率が小さく、実用的でなく
なる。FIG. 1 is a ternary diagram showing the composition range of the main component according to the present invention, and the reason why the composition range of the main component is limited will be described with reference to FIG. That is, the dielectric constant is small in the A region, which is not practical. Further, in the region B, the Curie point becomes too large on the minus side, and the rate of capacitance temperature change of the temperature characteristic largely deviates to the plus side, which is not practical. Further, sintering is extremely difficult in the C region.
Furthermore, the dielectric constant is small in the D region, which is not practical.
【0021】また、BaOをMgOで置換することによ
り、誘電率、絶縁破壊強度を大きく変えることなしに誘
電損失を小さくし、静電容量と絶縁抵抗の積(CR積)
を大きくする効果を有しているが、その置換率kが0.
001未満では効果はなく、一方0.100を越えると
誘電率が低下し実用的でなくなる。Further, by substituting MgO for BaO, the dielectric loss can be reduced without largely changing the dielectric constant and the dielectric breakdown strength, and the product of the electrostatic capacity and the insulation resistance (CR product).
However, the replacement rate k is 0.
If it is less than 001, there is no effect, while if it exceeds 0.100, the dielectric constant decreases and it becomes impractical.
【0022】さらに、結晶粒径を5〜10μmと小さく
することができる。 (実施例2)実施例1に高純度のCaCO3粉末を(表
4)に示す組成比になるように秤量し、以降の工程を実
施例1と同様に処理して(表4)の試料番号17〜32
に示す組成比の誘電体磁器円板を得、実施例1と同様に
処理して電気特性および結晶粒径を測定した結果を試料
番号17〜32別に(表5)に示す。Further, the crystal grain size can be reduced to 5 to 10 μm. (Example 2) High-purity CaCO 3 powder was weighed so as to have the composition ratio shown in (Table 4) in Example 1, and the subsequent steps were processed in the same manner as in Example 1 to obtain a sample of (Table 4). Numbers 17-32
The results obtained by obtaining the dielectric ceramic disk having the composition ratio shown in Table 1 and treating it in the same manner as in Example 1 and measuring the electrical characteristics and the crystal grain size are shown in Table 5 for each of sample numbers 17 to 32.
【0023】[0023]
【表4】 [Table 4]
【0024】[0024]
【表5】 [Table 5]
【0025】主成分の組成範囲を限定した理由は実施例
1と同様であるので説明は省略する。The reason why the composition range of the main component is limited is the same as that of the first embodiment, and the description thereof will be omitted.
【0026】また、BaOをMgOおよびCaOで置換
することにより、誘電率、絶縁破壊強度およびCR積を
大きく変えることなしに誘電損失を小さくする効果を有
しているが、MgOの置換率kが0.001未満では効
果はなく、一方0.100を越えると誘電率が低下し実
用的でなくなる。また、CaOの置換率mが0.005
未満では効果はなく、一方0.200を越えると焼結性
が悪くなり、誘電率が低下し実用的でなくなる。Also, by substituting BaO with MgO and CaO, it has the effect of reducing the dielectric loss without significantly changing the dielectric constant, dielectric breakdown strength and CR product, but the substitution rate k of MgO is If it is less than 0.001, there is no effect, while if it exceeds 0.100, the dielectric constant decreases and it becomes impractical. Further, the substitution rate m of CaO is 0.005.
If it is less than 0.20, there is no effect. On the other hand, if it exceeds 0.200, the sinterability is deteriorated and the dielectric constant is lowered, which is not practical.
【0027】(実施例3)実施例1に高純度のSrCO
3粉末を(表6)に示す組成比になるように秤量し、以
降の工程を実施例1と同様に処理して(表6)の試料番
号33〜48に示す組成比の誘電体磁器円板を得、実施
例1と同様に処理して電気特性および結晶粒径を測定し
た結果を試料番号33〜48別に(表7)に示す。(Example 3) High-purity SrCO was used in Example 1.
The three powders were weighed so as to have the composition ratio shown in (Table 6), and the subsequent steps were processed in the same manner as in Example 1 to obtain dielectric ceramic circles having the composition ratios shown in sample numbers 33 to 48 of (Table 6). A plate was obtained, treated in the same manner as in Example 1, and the electrical characteristics and the crystal grain size were measured. The results are shown in Table 7 for each of sample numbers 33 to 48.
【0028】[0028]
【表6】 [Table 6]
【0029】[0029]
【表7】 [Table 7]
【0030】主成分の組成範囲を限定した理由は実施例
1と同様であるので説明は省略する。The reason why the composition range of the main component is limited is the same as that of the first embodiment, and the description thereof will be omitted.
【0031】また、BaOをMgOおよびSrOで置換
することにより、誘電率、絶縁破壊強度を大きく変える
ことなく誘電損失を小さく、CR積を大きくする効果を
有しているが、MgOの置換率kが0.001未満では
効果はなく、一方0.100を越えると誘電率が低下し
実用的でなくなる。また、SrOの置換率nが0.00
5未満では効果はなく、一方0.200を越えると誘電
率が低下し実用的でなくなる。Further, by substituting BaO with MgO and SrO, it has the effect of reducing the dielectric loss and increasing the CR product without significantly changing the dielectric constant and dielectric breakdown strength, but the substitution rate k of MgO is k. Is less than 0.001, there is no effect, while if it exceeds 0.100, the dielectric constant decreases and it becomes impractical. Further, the substitution ratio n of SrO is 0.00
If it is less than 5, there is no effect. On the other hand, if it exceeds 0.200, the dielectric constant decreases and it becomes impractical.
【0032】さらに、結晶粒径を5〜10μmと小さく
することができる。 (実施例4)実施例1の高純度のMgOの代わりに、高
純度のCaCO3およびSrCO3粉末を(表8)に示す
組成比になるように秤量し、以降の工程を実施例1と同
様に処理して(表8)の試料番号49〜64に示す組成
比の誘電体磁器円板を得、実施例1と同様に処理して電
気特性および結晶粒径を測定した結果を試料番号49〜
64別に(表9)に示す。Further, the crystal grain size can be reduced to 5 to 10 μm. (Example 4) Instead of the high-purity MgO of Example 1, high-purity CaCO 3 and SrCO 3 powders were weighed so that the composition ratio shown in (Table 8) was obtained, and the subsequent steps were performed as in Example 1. Samples Nos. 49 to 64 having the composition ratios shown in Table 8 were treated in the same manner to obtain dielectric ceramic disks, and treated in the same manner as in Example 1 to measure the electrical characteristics and the crystal grain size. 49 ~
It is shown in 64 (Table 9).
【0033】[0033]
【表8】 [Table 8]
【0034】[0034]
【表9】 [Table 9]
【0035】主成分の組成範囲を限定した理由は実施例
1と同様であるので説明は省略する。The reason why the composition range of the main component is limited is the same as that of the first embodiment, and the description thereof will be omitted.
【0036】また、BaOをSrOおよびCaOで置換
することにより、誘電率、絶縁破壊強度を大きく変える
ことなく誘電損失を小さく、CR積を大きくする効果を
有しているが、CaOの置換率mが0.005未満では
効果はなく、一方0.200を越えると焼結性が悪くな
り、誘電率が低下し実用的でなくなる。また、SrOの
置換率nが0.005未満では効果はなく、一方0.2
00を越えると誘電率が低下し実用的でなくなる。Further, by substituting BaO with SrO and CaO, it has the effect of reducing the dielectric loss and increasing the CR product without significantly changing the dielectric constant and dielectric breakdown strength. Is less than 0.005, there is no effect, while if it exceeds 0.200, the sinterability deteriorates and the dielectric constant decreases, making it impractical. Further, if the substitution ratio n of SrO is less than 0.005, there is no effect, while 0.2
If it exceeds 00, the dielectric constant is lowered and it becomes impractical.
【0037】さらに、結晶粒径を5〜10μmと小さく
することができる。 (実施例5)実施例1に高純度のCaCO3およびSr
CO3粉末を(表10)に示す組成比になるように秤量
し、以降の工程を実施例1と同様に処理して(表10)
の試料番号65〜80に示す組成比の誘電体磁器円板を
得、実施例1と同様に処理して電気特性および結晶粒径
を測定した結果を試料番号65〜80別に(表11)に
示す。Further, the crystal grain size can be reduced to 5 to 10 μm. (Example 5) High-purity CaCO Example 1 3 and Sr
The CO 3 powder was weighed so that the composition ratio shown in (Table 10) was obtained, and the subsequent steps were treated in the same manner as in Example 1 (Table 10).
Sample Nos. 65 to 80 of the dielectric ceramic plate were obtained, treated in the same manner as in Example 1 and measured for electrical characteristics and crystal grain size. Show.
【0038】[0038]
【表10】 [Table 10]
【0039】[0039]
【表11】 [Table 11]
【0040】主成分の組成範囲を限定した理由は実施例
1と同様であるので説明は省略する。The reason why the composition range of the main component is limited is the same as in Example 1, and therefore the description thereof is omitted.
【0041】また、BaOをMgO、CaOおよびSr
Oで置換することにより、誘電率、絶縁破壊強度および
CR積を大きく変えることなく誘電損失を小さくする効
果を有しているが、MgOの置換率kが0.001未満
では効果はなく、一方0.100を越えると誘電率が低
下し実用的でなくなる。また、CaOの置換率mが0.
005未満では効果はなく、一方0.200を越えると
焼結性が悪くなり、誘電率が低下し実用的でなくなる。
さらに、SrOの置換率nが0.005未満では効果は
なく、一方0.200を越えると誘電率が低下し実用的
でなくなる。Further, BaO is replaced with MgO, CaO and Sr.
Substitution with O has the effect of reducing the dielectric loss without significantly changing the dielectric constant, dielectric breakdown strength and CR product, but if the substitution rate k of MgO is less than 0.001, it has no effect. If it exceeds 0.100, the dielectric constant is lowered and it becomes impractical. Further, the substitution rate m of CaO is 0.
If it is less than 005, there is no effect. On the other hand, if it exceeds 0.200, the sinterability deteriorates, and the dielectric constant decreases, making it impractical.
Further, if the substitution ratio n of SrO is less than 0.005, there is no effect, while if it exceeds 0.200, the dielectric constant decreases and it becomes impractical.
【0042】さらに、結晶粒径を5〜10μmと小さく
することができる。 (実施例6)実施例1〜5の代表的な試料に高純度のN
b2O5粉末を(表12)に示す組成比になるように秤量
し、以降の工程を実施例1と同様に処理して(表12)
の試料番号81〜93に示す組成比の誘電体磁器円板を
得、実施例1と同様に処理して電気特性および結晶粒径
を測定した結果を試料番号81〜93別に(表13)に
示す。Further, the crystal grain size can be reduced to 5 to 10 μm. (Example 6) High-purity N was added to the representative samples of Examples 1-5.
The b 2 O 5 powder was weighed so as to have the composition ratio shown in (Table 12), and the subsequent steps were treated in the same manner as in Example 1 (Table 12).
Sample Nos. 81 to 93 of the dielectric ceramic plates having composition ratios shown in Table 1 were obtained by treating samples in the same manner as in Example 1 for electrical characteristics and crystal grain size. Show.
【0043】[0043]
【表12】 [Table 12]
【0044】[0044]
【表13】 [Table 13]
【0045】主成分の組成範囲を限定した理由は実施例
1と同様であるので説明は省略する。The reason why the composition range of the main component is limited is the same as that of the first embodiment, and the description thereof will be omitted.
【0046】主成分に対し、副成分Nb2O5を含有する
ことにより静電容量と絶縁抵抗の積(CR積)と絶縁破
壊電圧を向上させる効果を有しているが、その含有量が
主成分100重量部に対し、0.3重量部未満では含有
効果はなく、一方3.0重量部を越えるとキュリー点が
マイナス側にずれ誘電率を低下させ実用的でなくなる。By containing the sub-component Nb 2 O 5 with respect to the main component, it has the effect of improving the product of electrostatic capacity and insulation resistance (CR product) and the dielectric breakdown voltage. If it is less than 0.3 parts by weight with respect to 100 parts by weight of the main component, there is no effect of inclusion. On the other hand, if it exceeds 3.0 parts by weight, the Curie point shifts to the negative side and the dielectric constant is lowered, which is not practical.
【0047】また、結晶粒径を3〜8μmと小さくする
ことができる。上記の各実施例において、副成分として
のMnO2を含有することにより、CR積を向上させる
効果を有しているが、実施例6の(表12)および(表
13)に示すように、その含有率が主成分100重量部
に対し、0.01重量部未満ではCR積を大きくすると
いう含有効果はなく、また1.00重量部を越えるとC
R積が低下し、実用的でなくなる。これは実施例1〜5
においても全く同様であった。Further, the crystal grain size can be reduced to 3 to 8 μm. In each of the above Examples, the inclusion of MnO 2 as a sub-component has the effect of improving the CR product, but as shown in (Table 12) and (Table 13) of Example 6, If the content is less than 0.01 parts by weight with respect to 100 parts by weight of the main component, there is no effect of increasing the CR product, and if it exceeds 1.00 parts by weight, C
The R product decreases and becomes impractical. This is Example 1-5
It was exactly the same in.
【0048】なお、実施例における誘電体磁器組成物の
作製方法では、BaCO3、MgO、SrCO3、CaC
O3、TiO2、Nd2O3、Nb2O5およびMnO2を使
用したが、この方法に限定されるものではなく、所望の
組成比になるようにBaTiO3などの化合物、あるい
は炭酸塩、水酸化物など空気中での加熱により、Ba
O、MgO、SrO、CaO、TiO2、Nd2O3、N
b2O5およびMnO2となる化合物を使用しても実施例
と同程度の特性を得ることができる。In the method for producing the dielectric ceramic composition in the examples, BaCO 3 , MgO, SrCO 3 and CaC are used.
O 3 , TiO 2 , Nd 2 O 3 , Nb 2 O 5 and MnO 2 were used, but the method is not limited to this, and a compound such as BaTiO 3 or a carbonate may be used so as to obtain a desired composition ratio. , Ba by heating in air such as hydroxide
O, MgO, SrO, CaO, TiO 2 , Nd 2 O 3 , N
Even if a compound that becomes b 2 O 5 and MnO 2 is used, it is possible to obtain characteristics similar to those of the examples.
【0049】また、一般に使用されている工業用BaT
iO3のBa/Ti比は0.98以上であり、BaTi
O3を出発原料として使用した場合、不足分のBaOま
たはTiO2を添加しても実施例と同程度の特性を得る
ことができる。Further, the industrially used BaT which is generally used
The Ba / Ti ratio of iO 3 is 0.98 or more.
When O 3 is used as a starting material, the same level of characteristics as in the example can be obtained even if a shortage of BaO or TiO 2 is added.
【0050】さらに、主成分をあらかじめ仮焼し、副成
分を添加しても実施例と同程度の特性を得ることができ
る。Further, even if the main component is pre-calcined in advance and the sub-components are added, the same characteristics as those of the embodiment can be obtained.
【0051】さらにまた、誘電体磁器用として一般に使
用される工業用原料の二酸化チタン、例えばチタン工業
(株)製二酸化チタンKA−10、古河鉱業(株)製二
酸化チタンFA−55Wには最大0.45重量%のNb
2O5が含まれるが、これらの二酸化チタンを使用して主
成分の誘電体磁器を作成しても主成分100重量%に対
して、Nb2O5の含有量は最大で0.17重量%であ
り、本発明の範囲外であるが、工業用原料の酸化チタン
中のNb2O5量を考慮し、不足分のNb2O5を含有させ
ることにより、実施例と同程度の特性を得ることができ
る。Further, titanium dioxide, which is an industrial raw material generally used for dielectric porcelain, such as titanium dioxide KA-10 manufactured by Titanium Industry Co., Ltd. and titanium dioxide FA-55W manufactured by Furukawa Mining Co., Ltd. has a maximum of 0. .45 wt% Nb
2 O 5 is contained, but even if a dielectric ceramic of the main component is made using these titanium dioxides, the maximum content of Nb 2 O 5 is 0.17 wt% with respect to 100 wt% of the main component. %, Which is out of the range of the present invention, but by considering the amount of Nb 2 O 5 in titanium oxide, which is a raw material for industrial use, and adding a shortage of Nb 2 O 5 , the same characteristics as those of the example were obtained. Can be obtained.
【0052】そして、上述の基本組成のほかに、Zn
O、SiO2、Fe2O3など、一般にフラックスと考え
られている塩類、酸化物などを特性を損なわない範囲で
加えることもできる。In addition to the above basic composition, Zn
It is also possible to add salts, oxides, etc., which are generally considered to be fluxes, such as O, SiO 2 , Fe 2 O 3, etc. within a range that does not impair the characteristics.
【0053】[0053]
【発明の効果】以上のように本発明によれば、高い誘電
率を有し、BaOをSrOで置換することにより、誘電
率、絶縁破壊強度を大きく変えることなしに誘電損失を
小さくし、かつ静電容量と絶縁抵抗の積(CR積)を大
きくすることができる。また、副成分としてマンガンを
添加することにより、CR積を大きくすることができ
る。さらにまた、副成分としてニオブを添加することに
より、CR積と絶縁破壊強度を大きくすることができ
る。さらに、これらの構成により結晶粒径が小さい誘電
体磁器が得られるものである。このため誘電体厚みを薄
くすることができ、製品の小型化、大容量化が可能とな
るものである。As described above, according to the present invention, by replacing BaO with SrO, which has a high dielectric constant, the dielectric loss can be reduced without largely changing the dielectric constant and dielectric breakdown strength, and The product of the capacitance and the insulation resistance (CR product) can be increased. In addition, the CR product can be increased by adding manganese as an accessory component. Furthermore, the CR product and the dielectric breakdown strength can be increased by adding niobium as an accessory component. Further, with these configurations, a dielectric ceramic having a small crystal grain size can be obtained. Therefore, the thickness of the dielectric can be reduced, and the product can be downsized and the capacity can be increased.
【図1】本発明の請求項1の誘電体磁器組成物にかかる
組成範囲を示す三元図FIG. 1 is a ternary diagram showing a composition range of a dielectric ceramic composition according to claim 1 of the present invention.
Claims (6)
(MgO)k(CaO) m(SrO)n]・yTiO2・z
NdO3/2で表され、m=0、n=0でkの値が0.0
01≦k≦0.100の範囲にある組成を有し、かつ
x、yおよびzはモル比を表し、x+y+z=1でx、
y、zの値が、 【表1】 に示すa、b、c、dで囲まれるモル比の範囲からなる
組成を有し、さらに副成分としてマンガン化合物をMn
O2の形に換算して0.01〜1.00重量部含有して
なる誘電体磁器組成物。1. The general formula x [(BaO)](1-kmn)
(MgO)k(CaO) m(SrO)n] ・ YTiO2・ Z
NdO3/2And m = 0, n = 0, and the value of k is 0.0
Has a composition in the range of 01 ≦ k ≦ 0.100, and
x, y and z represent a molar ratio, x + y + z = 1, and x,
The values of y and z are as shown in Table 1.In the range of molar ratios surrounded by a, b, c and d
And a manganese compound as a sub-component.
O20.01 to 1.00 parts by weight
Dielectric porcelain composition.
0.001≦k≦0.100、0.005≦m≦0.2
00の範囲からなる組成を有する請求項1記載の誘電体
磁器組成物。2. When n = 0 and the values of k and m are respectively:
0.001 ≦ k ≦ 0.100, 0.005 ≦ m ≦ 0.2
The dielectric ceramic composition according to claim 1, which has a composition in the range of 00.
0.001≦k≦0.100、0.005≦n≦0.2
00の範囲からなる組成を有する請求項1記載の誘電体
磁器組成物。3. When m = 0, the values of k and n are respectively:
0.001 ≦ k ≦ 0.100, 0.005 ≦ n ≦ 0.2
The dielectric ceramic composition according to claim 1, which has a composition in the range of 00.
0.005≦m≦0.200、0.005≦n≦0.2
00の範囲からなる組成を有する請求項1記載の誘電体
磁器組成物。4. When k = 0, the values of m and n are respectively:
0.005 ≦ m ≦ 0.200, 0.005 ≦ n ≦ 0.2
The dielectric ceramic composition according to claim 1, which has a composition in the range of 00.
01≦k≦0.100、0.005≦m≦0.200、
0.005≦n≦0.200の範囲からなる組成を有す
る請求項1記載の誘電体磁器組成物。5. The values of k, m and n are each 0.0.
01 ≦ k ≦ 0.100, 0.005 ≦ m ≦ 0.200,
The dielectric ceramic composition according to claim 1, which has a composition in the range of 0.005 ≦ n ≦ 0.200.
形に換算して0.3〜3.0重量部添加してなる請求項
1〜5のいずれか一つに記載の誘電体磁器組成物。6. The dielectric material according to claim 1, wherein 0.3 to 3.0 parts by weight of niobium oxide is added as a subcomponent in the form of Nb 2 O 5. Porcelain composition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5056685A JPH06267331A (en) | 1993-03-17 | 1993-03-17 | Dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5056685A JPH06267331A (en) | 1993-03-17 | 1993-03-17 | Dielectric porcelain composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06267331A true JPH06267331A (en) | 1994-09-22 |
Family
ID=13034299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5056685A Pending JPH06267331A (en) | 1993-03-17 | 1993-03-17 | Dielectric porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06267331A (en) |
-
1993
- 1993-03-17 JP JP5056685A patent/JPH06267331A/en active Pending
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