JPH04171698A - Electroluminescence display panel - Google Patents

Electroluminescence display panel

Info

Publication number
JPH04171698A
JPH04171698A JP2300577A JP30057790A JPH04171698A JP H04171698 A JPH04171698 A JP H04171698A JP 2300577 A JP2300577 A JP 2300577A JP 30057790 A JP30057790 A JP 30057790A JP H04171698 A JPH04171698 A JP H04171698A
Authority
JP
Japan
Prior art keywords
film
insulating
barrier film
insulating substrate
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2300577A
Other languages
Japanese (ja)
Other versions
JP2808886B2 (en
Inventor
Tomoyuki Kawashima
河島 朋之
Hisato Kato
久人 加藤
Toshiaki Kato
利明 加藤
Harutaka Taniguchi
谷口 春隆
Kazuyoshi Shibata
一喜 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2300577A priority Critical patent/JP2808886B2/en
Publication of JPH04171698A publication Critical patent/JPH04171698A/en
Application granted granted Critical
Publication of JP2808886B2 publication Critical patent/JP2808886B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the deterioration of a luminous film and extend the life of an EL display panel by arranging a barrier film made of an insulating material with little alkaline metal content on the portion of a laminated film structure at least kept in contact with an insulating-substrate. CONSTITUTION:A soda glass plate colorless, transparent and smooth on the surface is used for an insulating substrate 2, and an aluminosilicate barrier film 10 containing an alkaline metal oxide is formed wholly on one face. Many transparent electrode films 3 made of ITO or tin oxide and the like are arranged in a stripe-shaped pattern on the barrier film 10. An insulating film 11 kept in contact with an insulating film 4 made of the same material as that of the barrier film 10 is formed on the whole face as an insulating film to be kept in contact with a luminous film 5 arranged on it. Impurities such as harmful alkaline metal ions are prevented from being moved from the insulating substrate 2 to the luminous film 5, and the deterioration of the EL luminous characteristic is prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はエレクトロルミネッセンス (以下ELという
)発光を利用した表示板ないし表示パネルであって、透
明なガラス等の絶縁基板の上にEL発光膜を絶縁膜や電
極膜等とともに積層してなる薄膜積層構造のものに関す
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a display board or display panel that utilizes electroluminescence (hereinafter referred to as EL) light emission, which comprises an EL light-emitting film on an insulating substrate such as transparent glass. It relates to a thin film laminated structure formed by laminating the above together with an insulating film, an electrode film, etc.

〔従来の技術〕[Conventional technology]

周知のように、EL表示板にはEL発光物質の粉末を樹
脂やガラスに分散させた塗布膜を用いるいわゆる分散形
のものもあるが、最近では上述の薄膜積層構造のものが
文字や図形等の可変画像を表示できるマトリックス形に
適する点等から広く採用されるようになり、現在は黄色
系の単色表示用からその実用化が始まり、自発光性のフ
ラットパネルとしての将来性が期待されている。以下、
このマトリックス形の代表的な従来のEL表示板の構成
を第5図を参照して簡単に説明する。
As is well known, some EL display boards are of the so-called dispersed type, which use a coating film in which EL luminescent substance powder is dispersed in resin or glass, but recently, those with the above-mentioned thin film laminated structure have been used to display characters, figures, etc. It has become widely adopted due to its suitability for matrix formats that can display variable images, and its practical use has now begun for yellowish monochrome displays, and is expected to have future potential as a self-luminous flat panel. There is. below,
The structure of a typical conventional EL display panel of this matrix type will be briefly explained with reference to FIG.

第5図において、EL表示板の本体である絶縁基板1に
はふつう透明で平坦なガラス板を用い、その表面にIT
O(インジウム錫酸化物)等からなる薄い透明電極膜3
を紙面に直角方向に延びるストライプ状パターンで多数
個図のように並べて配設する。次に、全面上に酸化イン
トリューム。
In FIG. 5, the insulating substrate 1, which is the main body of the EL display board, is usually a transparent and flat glass plate, and the IT
Thin transparent electrode film 3 made of O (indium tin oxide) etc.
A large number of stripes are arranged in a striped pattern extending perpendicular to the plane of the paper as shown in the figure. Next, oxidize intrum over the entire surface.

アルミナ、窒化シリコン等の絶縁膜4を被覆し、その上
に0.5%程度のマンガンを含む硫化亜鉛の発光膜5を
配設して、さらにその全面を上と同じ絶縁膜6で覆う。
An insulating film 4 made of alumina, silicon nitride or the like is coated, a luminescent film 5 of zinc sulfide containing about 0.5% manganese is disposed thereon, and the entire surface thereof is covered with the same insulating film 6 as above.

最上層の裏面電極膜7はふつうアルミ膜で、透明電極膜
3と直交するストライブ状パターンで多数個並べて配設
され、その端部が接続部7aとされる。なお、絶縁膜4
および6の内の一方が省略される場合もある。
The uppermost back electrode film 7 is usually an aluminum film, and a large number of them are arranged in a striped pattern perpendicular to the transparent electrode film 3, and the ends thereof are used as the connection parts 7a. Note that the insulating film 4
and 6 may be omitted.

透明電極膜3および裏面電極膜7を順次走査しながら両
者間に表示電圧を与えた時、発光膜5内の両型極膜の交
点に対応する部分がマトリックス表示上の画素になり、
そのEL光発光ある各画素の表示光Ldが図示のように
絶縁基板I側から取り出される。このEL表示板は表示
電圧を走査周期ごとに正負に切り換えていわゆる交流駆
動されるのがふつうである。
When the transparent electrode film 3 and the back electrode film 7 are sequentially scanned and a display voltage is applied between them, the portion corresponding to the intersection of the bipolar films in the light emitting film 5 becomes a pixel on the matrix display,
The display light Ld of each pixel emitting EL light is taken out from the insulating substrate I side as shown. This EL display panel is normally driven with so-called alternating current by switching the display voltage between positive and negative at each scanning period.

(発明が解決しようとする課題〕 第5図の従来構造のE L表示板では、薄膜積層構造を
真空蒸着、スバ・νり、フォトエツチング等の半導体製
造波441を利用しながら1mm程度の厚みの絶縁基板
上に2μ重程度以下の厚めで作り込んだフラットパネル
を構成でき、かつ絶縁膜の膜厚を薄くすることにより比
較的低い表示電圧で駆動できるが、その反面、使用時間
の経通につれて表示輝度が次第に低下しやすい傾向があ
り、可使寿命が必ずしもまだ充分でない問題がある。
(Problems to be Solved by the Invention) In the EL display panel of the conventional structure shown in FIG. It is possible to construct a flat panel with a thickness of about 2 μm or less on an insulating substrate, and by reducing the thickness of the insulating film, it can be driven with a relatively low display voltage. There is a problem that the display brightness tends to gradually decrease over time, and the usable life is not necessarily sufficient.

この原因の一つは0.3〜0.5μlの薄い絶縁膜中の
電界強度が105V/cm程度と非常に高く、電界の集
中部で絶縁破壊が発生しやすい点にある。このため、例
えば絶縁膜に局部的な絶縁破壊が起きてもそれが拡大し
ないいわゆる自己回復性を備える前述の酸化イットリュ
ーム等の材料が用いられるが、かかる絶縁膜の改善だけ
では表示輝度の漸減傾向を止めるのは困難である。
One of the reasons for this is that the electric field strength in a thin insulating film of 0.3 to 0.5 .mu.l is extremely high, about 105 V/cm, and dielectric breakdown is likely to occur in areas where the electric field is concentrated. For this reason, for example, materials such as the aforementioned yttrium oxide, which has so-called self-healing properties that do not expand even if local dielectric breakdown occurs in the insulating film, are used, but if only the improvement of such an insulating film is enough, the display brightness will gradually decrease. Trends are difficult to stop.

これはもう一つの原因に発光膜自体のEL発光特性の劣
化があるためで、この劣化機構にも種々な因子が関連し
ていると考えられるが、その主なものに不純物、とくに
アルカリ金属原子の発光膜への侵入がある。Na等のア
ルカリ金属の不純物源はもちろん絶縁基板用のガラスで
あり、Na含有率が高いガラスを絶縁基板に用いたEL
表示板では発光輝度が初期値からすでに低く、逆にNa
含有率がとくに低いガラスを用いると発光特性の劣化を
減少させることができる。
Another reason for this is the deterioration of the EL emission characteristics of the luminescent film itself, and various factors are thought to be related to this deterioration mechanism, but the main one is impurities, especially alkali metal atoms. There is an intrusion into the luminescent film. The impurity source of alkali metals such as Na is of course the glass for the insulating substrate, and EL uses glass with a high Na content as the insulating substrate.
On the display board, the luminance is already low from the initial value, and on the contrary, Na
If a glass with a particularly low content is used, deterioration of the luminescent properties can be reduced.

従って、絶縁基板にはアルカリ金属の含有量ができるだ
け少ないガラスを用いればよいことになるが、非常に高
価につくので材料コストが嵩んで実用的でない問題があ
る。また、絶縁膜の膜厚を増して不純物の侵入を防ぐこ
とも考えられるが、従来の絶縁膜はこのためにはあまり
適せず、表示電圧が実用性のある値を越えるまで絶縁膜
の膜厚を増さないと充分な効果が得られない。
Therefore, it would be sufficient to use glass with as little alkali metal content as possible for the insulating substrate, but it is very expensive and has the problem of increasing material costs and making it impractical. Another possibility is to increase the thickness of the insulating film to prevent impurities from penetrating, but conventional insulating films are not very suitable for this purpose, and the insulating film remains thin until the display voltage exceeds a practical value. A sufficient effect cannot be obtained unless the thickness is increased.

かかる現状に鑑み本発明は、アルカリ金属類の発光膜へ
の侵入を有効に防止し、発光特性の劣化が少なく経済性
のあるEL表示板を提供することを目的とする。
In view of the current situation, it is an object of the present invention to provide an EL display board that effectively prevents alkali metals from entering the light emitting film, has less deterioration of light emitting characteristics, and is economical.

(課題を解決するための手段〕 本発明によればこの目的は、冒頭記載のように絶縁基板
上に発光膜を絶縁膜、電極膜等とともに積層してなるE
L表示板に対して、積層膜構造の少なくとも絶縁基板に
接する部分にアルカリ金属含有量が小な絶縁性材料から
なるバリア膜を配設することによって達成される。
(Means for Solving the Problems) According to the present invention, this object is achieved by providing an E, which is formed by laminating a light emitting film on an insulating substrate together with an insulating film, an electrode film, etc., as described at the beginning.
This is achieved by disposing a barrier film made of an insulating material with a low alkali metal content on at least the portion of the laminated film structure in contact with the insulating substrate for the L display panel.

なお、上記構成にいうバリア膜のアルカリ金属音π量は
0.1%以下とするのがよく、その材料には珪酸アルミ
ナ系を用いるのが好適で、さらには硼素を含む硼珪酸ア
ルミナ系やアルミナのほかに亜鉛やバリウム等の2価の
金属の酸化物を含存するものを用いることができる。バ
リア膜に適するかかる材料中の各構成成分の含有量範囲
は重量%で表して、珪酸ないし酸化シリコンが40〜8
0%、アルミナが5〜20%、硼酸が0〜20%、2価
金属の酸化物が0〜30%である。
The alkali metal sound π content of the barrier film in the above structure is preferably 0.1% or less, and it is preferable to use an alumina silicate material, and more preferably a borosilicate alumina material containing boron. In addition to alumina, materials containing divalent metal oxides such as zinc and barium can be used. The content range of each component in such a material suitable for a barrier film is 40 to 8% by weight for silicic acid or silicon oxide.
0%, alumina 5-20%, boric acid 0-20%, and divalent metal oxide 0-30%.

また、このバリア膜はスパッタ法で成膜するのが最も望
ましく、真空蒸着法とくにソースを電子ビームで加熱す
る電子ビーム真空蒸着法によって成膜することも可能で
ある。また、スパッタ法による場合にはバリア膜をアモ
ルファス状態で成膜するのがとくに望ましい。
Further, it is most desirable to form this barrier film by a sputtering method, but it can also be formed by a vacuum evaporation method, particularly an electron beam vacuum evaporation method in which a source is heated with an electron beam. Furthermore, when using the sputtering method, it is particularly desirable to form the barrier film in an amorphous state.

本発明の実施に当たっては、バリア膜を上述の6一 ように積層膜構造の絶縁基板に接する部分に配設するだ
けでなく、これを発光膜に接する絶縁膜等に対して用い
ることも可能である。
In carrying out the present invention, it is possible not only to provide the barrier film on the part of the laminated film structure in contact with the insulating substrate as described in 6-1 above, but also to use it on the insulating film, etc. in contact with the light emitting film. be.

〔作用〕[Effect]

本発明は、前項の構成にいうようにアルカリ金属含有量
が小な珪酸アルミナ系等の絶縁性材料からなるピンボー
ル等の欠陥が非常に少ない緻密な膜をスパッタ法等によ
り成膜してバリア膜とし、これを発光膜を含む積層膜構
造中の少なくとも絶縁基板に接する部分に配設すること
によって、絶縁基板から有害なアルカリ金属イオン等の
不純物が発光膜に移動するのを阻止して、EL発光特性
の劣化を防止するものである。以下、このバリア膜のア
ルカリ金属イオンの移動阻止性能の試験結果を第3図と
第4図を参照して説明する。
As described in the structure of the previous section, the present invention provides a barrier barrier by forming a dense film with very few defects such as pinballs, which is made of an insulating material such as alumina silicate and has a low alkali metal content, by a sputtering method or the like. By disposing this as a film at least in the part of the laminated film structure including the light-emitting film that is in contact with the insulating substrate, it is possible to prevent impurities such as harmful alkali metal ions from moving from the insulating substrate to the light-emitting film. This prevents deterioration of EL light emission characteristics. Hereinafter, the test results of the ability of this barrier film to inhibit movement of alkali metal ions will be explained with reference to FIGS. 3 and 4.

第3図に試験試料を示す。試料の絶縁基板2には約15
%のNa等のアルカリ金属酸化物を含む通常のソーダガ
ラスの1mmの厚みの10 X 10cmの方形板を用
いた。バリア膜10用にはアルカリ金属酸化物含有量が
0.1%以下のHOYA社製無アルカリのアルミノ珪酸
ガラスNA40を用い、その板をターゲットとする計と
酸素を含む5 mTorrの減圧ふん囲気内の常温下の
スパッタ法によって絶縁基板2の両面にバリア膜10を
0.01*/分のスバ、2リング速度で0.1μlの膜
厚に成膜した。このように成膜されたバリア膜10はX
線回折結果によればアモルファス状態である。なお、絶
縁基板2の周面をあらかじめ斜めに加工して置くことに
より、試料の全面が周面を含め図のようにバリア膜10
によって完全に覆われるようにした。
Figure 3 shows the test sample. The insulating substrate 2 of the sample has approximately 15
A 10 x 10 cm square plate of 1 mm thickness of ordinary soda glass containing % of alkali metal oxide such as Na was used. For the barrier film 10, HOYA's alkali-free aluminosilicate glass NA40 with an alkali metal oxide content of 0.1% or less was used, and a meter targeting the plate was placed in a reduced pressure atmosphere of 5 mTorr containing oxygen. A barrier film 10 was formed on both sides of the insulating substrate 2 to a thickness of 0.1 μl at a sputtering rate of 0.01*/min and a ring speed of 2 by sputtering at room temperature. The barrier film 10 formed in this way has an X
According to the line diffraction results, it is in an amorphous state. Note that by processing the circumferential surface of the insulating substrate 2 obliquely in advance, the entire surface of the sample including the circumferential surface is coated with the barrier film 10 as shown in the figure.
so that it is completely covered by

この試料を圧力容器内の純水中に浸漬して試験温度下で
24時間加熱した上で、純水中に溶出したNa分をプラ
ズマ発光分析法によりNa2Oの形で微量分析した。比
較試料にはバリア膜10がないソーダガラスだけの絶縁
基板2を用いた。この試験結果をバリア膜10ありの試
料をA、なしの試料をBとして示したのが第4図で、そ
の横軸は試験温度Tであり、縦軸はNa2Oで示した溶
出量の常温下での試料Bの溶出量を1とする相対値であ
る。
This sample was immersed in pure water in a pressure vessel and heated at the test temperature for 24 hours, and then trace amounts of Na dissolved in the pure water in the form of Na2O were analyzed by plasma emission spectrometry. As a comparison sample, an insulating substrate 2 made of only soda glass without the barrier film 10 was used. The test results are shown in Figure 4, with the sample with barrier film 10 as A and the sample without as B, where the horizontal axis is the test temperature T and the vertical axis is the elution amount of Na2O at room temperature. This is a relative value with the elution amount of sample B at 1 being 1.

図のように、常温では試料Aの溶出量が試料Bより1桁
以上低く、試料Bでは試験温度が200°Cを越えると
溶出量が急激に増加するが試料Aでは増加率はずっと緩
やかで、これからバリア膜10がNaイオンの移動に対
し高い阻止効果を有することがわかる。なお、EL表示
板は常温下で使用されるのはもちろんであるが、製造工
程中で発光膜の特性向上のため最高450〜500°C
,1時間程度の熱処理を受ける。図の試験結果からこの
熱処理時にもバリア膜10によりNaイオンの移動を防
止できることがわかる。
As shown in the figure, at room temperature, the elution amount of sample A is more than an order of magnitude lower than sample B, and for sample B, the elution amount increases rapidly when the test temperature exceeds 200°C, but for sample A, the rate of increase is much slower. From this, it can be seen that the barrier film 10 has a high blocking effect on the movement of Na ions. It should be noted that EL display boards can of course be used at room temperature, but they can also be used at temperatures of up to 450-500°C during the manufacturing process to improve the characteristics of the light-emitting film.
, undergo heat treatment for about 1 hour. From the test results shown in the figure, it can be seen that the barrier film 10 can prevent the movement of Na ions even during this heat treatment.

〔実施例〕〔Example〕

以下、第1図と第2図を参照しながら本発明の第1と第
2の実施例を説明する。いずれも本発明によるEL表示
板の一部拡大断面図で、第5図と同じ部分には同し符号
が付けられている。また、再実施例とも材料費低減のた
めにその絶縁基板2にはソーダガラスを用いるものとす
る。
Hereinafter, first and second embodiments of the present invention will be described with reference to FIGS. 1 and 2. Both are partially enlarged sectional views of the EL display board according to the present invention, and the same parts as in FIG. 5 are given the same reference numerals. Also, in the second embodiment, soda glass is used for the insulating substrate 2 in order to reduce material costs.

第1図の第1実施例において、絶縁基板2にはできるだ
け表面が平滑でもちろん無色透明な1mm程度の厚みの
ソーダガラス板を用い、その一方の全面にアルカリ金属
酸化物の含有量が0.1%以下のアルミノ珪酸バリア膜
10を前項で述べた条件で0.1μの膜厚で成膜する。
In the first embodiment shown in FIG. 1, the insulating substrate 2 is a soda glass plate with a thickness of about 1 mm, the surface of which is as smooth as possible and of course colorless and transparent, and the content of alkali metal oxide is 0.00000 on one entire surface. An aluminosilicate barrier film 10 containing 1% or less is formed to a thickness of 0.1 μm under the conditions described in the previous section.

このバリア膜10用材料としては、前述のHOYA社製
のカラスNA40のほかに同社のNA35. NA45
や米国Corning社製1729.1733゜705
9や旭硝子■製ANや日本電気硝子■製0A−2等を適
宜利用でき、スパッタ法による場合はこれらの板ガラス
を水冷銅板に接着したものをターゲットとし、真空蒸着
法による場合は同様なガラス板を電子ビーム加熱の蒸発
ソースとすることにより、粉末を焼結したターゲットや
ソースを用いるより膜内に不純物ガスや飛散粉末を含ま
すピンホール等の欠陥が非常に少ない緻密な膜質のバリ
ア膜10を成膜できる。
As the material for this barrier film 10, in addition to the above-mentioned Karasu NA40 manufactured by HOYA, the material for this barrier film 10 is NA35. NA45
1729.1733°705 manufactured by Corning, USA
9, AN manufactured by Asahi Glass ■, 0A-2 manufactured by Nippon Electric Glass ■, etc. can be used as appropriate. When using the sputtering method, the target is a glass plate made by adhering these glass plates to a water-cooled copper plate, and when using the vacuum evaporation method, the target is a similar glass plate. By using electron beam heating as an evaporation source, it is possible to create a dense barrier film with very few defects such as pinholes, which contains impurity gas and scattered powder in the film, compared to using a target or source made of sintered powder. can be formed into a film.

次に、このバリア膜10上に従来と同様にITOや酸化
錫等の0.2n程度の膜厚の透明電極膜3を前述のスト
ライプ状パターンで多数条並べて形成する。ざらにこの
全面上に、この第1実施例では第5図の絶縁膜4に当た
る絶縁膜11をバリア膜10と同し材料で0.3n程度
の膜厚で成膜して、その上に配設される発光膜5に接す
る絶縁膜とする。
Next, on this barrier film 10, a large number of transparent electrode films 3 made of ITO, tin oxide, etc. and having a film thickness of about 0.2 nm are formed in the aforementioned stripe pattern as in the conventional method. Roughly on this entire surface, an insulating film 11 corresponding to the insulating film 4 in FIG. 5 in this first embodiment is formed of the same material as the barrier film 10 to a thickness of about 0.3 nm, and the The insulating film is in contact with the light emitting film 5 provided.

もちろん、これは絶縁基板2のソーダガラスからのアル
カリ金属イオンの発光膜5への侵入を極力防止するため
で、絶縁基板2に低アルカリガラスを用いる場合には従
来どおりでもよい。
Of course, this is to prevent alkali metal ions from entering the light emitting film 5 from the soda glass of the insulating substrate 2 as much as possible, and if low alkali glass is used for the insulating substrate 2, the conventional method may be used.

発光膜5はふつう 0.3〜0−5%のMnを黄色発光
用の活性物質として含むZnSであり、通例のように電
子ビーム真空蒸着法により 0.5μ璽程度のflu厚
に成膜し、フォトエツチングによって図のように周縁部
だけが取り除かれたパターンに形成する。
The luminescent film 5 is usually ZnS containing 0.3 to 0-5% Mn as an active material for yellow luminescence, and is deposited to a flu thickness of about 0.5 μm by electron beam vacuum evaporation as usual. Then, by photo-etching, a pattern is formed with only the peripheral edge removed as shown in the figure.

次に、この発光M5の周面を覆う全面に絶縁It! 6
として例えば窒化シリコンをCVD法等によって0.3
n程度の厚みに成膜し、さらに0.5.n程度の厚みの
アルミの裏面電極膜7を前述のように透明電極PIJ、
3と直交するストライプ状パターンで多数条その上に並
べて配設する。この裏面電極膜7と透明電極膜3の交点
に対応する発光膜5の部分によりEL表示上の各画素が
構成されるのは従来と同じである。
Next, the entire surface covering the circumferential surface of this light emitting M5 is insulated It! 6
For example, silicon nitride is 0.3
A film was formed to a thickness of approximately 0.5 mm. The aluminum back electrode film 7 with a thickness of about n is formed into a transparent electrode PIJ as described above.
A large number of stripes are arranged in a striped pattern perpendicular to 3. As in the conventional case, each pixel on the EL display is constituted by the portion of the light emitting film 5 corresponding to the intersection of the back electrode film 7 and the transparent electrode film 3.

EL表示板は裏面電極膜7を露出させた状態のままでも
使用できるが、この第1実施例ではその上をバリア膜1
0と同じ材料からなる0 、 3 pm程度の膜厚の保
護膜13により覆った上で、その周縁部をフォトエツチ
ングにより除去して裏面電極膜7を露出させて接続部7
aとする。このための保護′膜13のパターンニングは
、通常のフォトレジスト膜をマスクとするぶつ酸水溶液
等の化学エツチングにより容易に行なうことができる。
Although the EL display board can be used with the back electrode film 7 exposed, in this first embodiment, the barrier film 1 is placed over it.
The connecting portion 7 is covered with a protective film 13 made of the same material as the protective film 13 with a thickness of about 0.3 pm, and the peripheral portion thereof is removed by photo-etching to expose the back electrode film 7.
Let it be a. Patterning of the protective film 13 for this purpose can be easily carried out by chemical etching using an aqueous acid solution or the like using an ordinary photoresist film as a mask.

第2図に示す第2実施例は第1実施例より構成を簡略化
してコスト低減を図るもので、第1図のバリア膜10を
省略してそのかわりにこれと同材料からなる絶縁膜11
と12を発光膜5に接して設け、第1図の保護膜7も省
略される。両絶縁膜の膜厚は絶縁膜11の方が例えば0
.3μl、絶縁膜12の方が0.5n程度にそれぞれさ
れる。絶縁基板2からのアルカリ金属イオンの発光膜5
への侵入は絶縁膜11によって防止される。この実施例
の絶縁膜12には従来からの窒化シリコン等を用いても
よいが、絶縁膜の材料をできるだけ統一した方がEL表
示板の量産上有利である。
The second embodiment shown in FIG. 2 is designed to simplify the structure and reduce costs compared to the first embodiment, and the barrier film 10 in FIG. 1 is omitted, and instead, an insulating film 11 made of the same material
and 12 are provided in contact with the light emitting film 5, and the protective film 7 in FIG. 1 is also omitted. The film thickness of both insulating films is, for example, 0 for the insulating film 11.
.. The amount of the insulating film 12 is about 3 μl, and about 0.5 n of the insulating film 12, respectively. Luminescent film 5 of alkali metal ions from insulating substrate 2
The insulating film 11 prevents the intrusion into the insulating film. Although conventional silicon nitride or the like may be used for the insulating film 12 in this embodiment, it is advantageous for mass production of EL display boards to unify the materials of the insulating film as much as possible.

これらいずれの実施例においても、発光M5の発光効率
を上げるために450〜500°Cの温度下で1時間程
度の熱処理が施される。この際もちろんバリア膜10や
絶縁膜11.場合により絶縁膜12にもこの温度が掛か
るが、絶縁基板2のソーダガラスからのNaイオン等の
アルカリ金属イオンの侵入による発光膜2の発光輝度の
低下は見られないことが確認されている。
In any of these examples, heat treatment is performed at a temperature of 450 to 500° C. for about 1 hour in order to increase the luminous efficiency of the light emitting M5. At this time, of course, the barrier film 10 and the insulating film 11. Although this temperature is applied to the insulating film 12 in some cases, it has been confirmed that the luminance of the light emitting film 2 is not reduced due to the intrusion of alkali metal ions such as Na ions from the soda glass of the insulating substrate 2.

以上のように構成されたEL表示板はもちろん従来と全
く同じ要領で表示駆動することでよい。
Of course, the EL display panel configured as described above may be driven for display in exactly the same manner as the conventional display.

なお、バリア膜用のアルミナ珪酸系材料を発光膜に接す
る絶縁膜として用いた場合、その誘電率が従来から多く
使用されて来た窒化シリコンやアルミナと同程度なので
発光膜のEL発光輝度に全く遜色はなく表示電圧も同程
度でよい。
Note that when an alumina-silicate material for a barrier film is used as an insulating film in contact with a light-emitting film, its dielectric constant is about the same as silicon nitride and alumina, which have traditionally been widely used, so it has no effect on the EL luminance of the light-emitting film. There is no inferiority, and the display voltage may be the same.

第1実施例によるEL表示板の100°Cの温度下の加
熱劣化促進試験の結果によれば、発光輝度の劣化速度が
従来の数分の1以下と低いことが認められているので、
その可使寿命が従来の数倍以上に改善されるものと推定
される。
According to the results of a heating deterioration acceleration test at a temperature of 100°C of the EL display board according to the first example, it is recognized that the deterioration rate of luminance is low, at a fraction of the conventional rate.
It is estimated that its usable life will be improved several times over that of conventional products.

第1および第2の実施例の説明かられかるように、本発
明はこれらの実施例に限らず種々な態様で実施をするこ
とができる。実施例では絶縁基板にソーダガラスを用い
る場合につき説明したが、これに従来どおりの電気用ガ
ラスを用いる場合にもより簡単な構成で適用してアルカ
リ金属イオンの移動阻止効果を上げることができる。こ
のほか実施例で述べたEL表示板中の各部の材料組成。
As can be seen from the description of the first and second embodiments, the present invention is not limited to these embodiments and can be implemented in various ways. In the embodiment, the case where soda glass is used for the insulating substrate has been described, but even when conventional electrical glass is used, it can be applied with a simpler structure to increase the effect of inhibiting the movement of alkali metal ions. In addition, the material composition of each part in the EL display board described in the examples.

膜厚、成膜条件等はあくまで例示であり、本発明をその
要旨内で仕様や使用条件等に応し適宜取捨選択された態
様で実施できる。
The film thickness, film-forming conditions, etc. are merely examples, and the present invention can be implemented in an appropriately selected manner within the scope of the invention according to specifications, usage conditions, etc.

〔発明の効果〕〔Effect of the invention〕

以上説明したとおり本発明では、絶縁基板上に発光膜を
絶縁膜、電極膜等とともに積層してなるEL表示板に対
し、積層膜構造の少なくとも絶縁基板に直接に接する部
分にアルカリ金属含有量が小な絶縁性材料からなるバリ
ア膜を配設することにより、次の効果を得ることができ
る。
As explained above, in the present invention, for an EL display panel formed by laminating a luminescent film on an insulating substrate together with an insulating film, an electrode film, etc., the alkali metal content is reduced in at least the portion of the laminated film structure that is in direct contact with the insulating substrate. By providing a barrier film made of a small insulating material, the following effects can be obtained.

(a)アルカリ金属の含有量が小な珪酸アルミナ系等の
絶縁材料からなるピンホール等の欠陥が少ない緻密な膜
をバリア膜として絶縁基板からアルカリ金属イオンの発
光膜への侵入を防くことにより、発光膜の劣化を防止し
てEL表示板の寿命を従来の数倍以上に延ばすことがで
きる。
(a) Preventing alkali metal ions from entering the light-emitting film from the insulating substrate by using a dense film with few defects such as pinholes as a barrier film made of an insulating material such as alumina silicate with a small alkali metal content. Accordingly, deterioration of the light emitting film can be prevented and the life of the EL display panel can be extended several times or more compared to the conventional one.

(b)積層膜構造中の絶縁基板に接する部分にバリア膜
を配設して絶縁基板からのアルカリ金属イオンの移動を
有効に阻止できるので、絶縁基板にアルカリ金属含有量
が多いソーダガラスを用いることができ、その材料費を
無アルカリガラスに比べて10分の1に節約してEL表
示板の経済性を大幅に向上できる。
(b) Soda glass, which has a high alkali metal content, is used for the insulating substrate because a barrier film can be placed in the part of the laminated film structure that is in contact with the insulating substrate to effectively prevent the movement of alkali metal ions from the insulating substrate. The material cost can be reduced to one-tenth that of alkali-free glass, and the economic efficiency of the EL display board can be greatly improved.

(C)バリア膜を発光膜に接する絶縁膜にも利用するよ
うにすれば、発光膜へのアルカリ金属イオンの侵入防止
効果を一層高め、かつその無欠陥性により絶縁性能を向
上して、EI5表示板の発光特性の劣化をより一層少な
くできる。
(C) If the barrier film is also used as an insulating film in contact with the light-emitting film, the effect of preventing alkali metal ions from entering the light-emitting film will be further enhanced, and its defect-free property will improve the insulation performance, resulting in an EI55 Deterioration of the light emitting characteristics of the display board can be further reduced.

なお、バリア膜はスパッタ法等により短時間内に容易に
成膜でき、これを組み込んだE L表示板は発光輝度や
表示電圧等の表示特性面で従来品と比べてなんら遜色が
ない。
Note that the barrier film can be easily formed within a short time by sputtering or the like, and an EL display board incorporating this film is no inferior to conventional products in terms of display characteristics such as luminance and display voltage.

このように、本発明し才EL表示板の可使寿命と経済性
の改善面で著効を奏し得るもので、とくに積層薄膜構造
のマトリックス形EL表示板乙こ適用して効果が高く、
その−層の発展と普及に大きな貢献を果たすことが期待
される。
As described above, the present invention can be very effective in improving the usable life and economical efficiency of EL display panels, and is particularly effective when applied to matrix-type EL display panels having a laminated thin film structure.
It is expected that this technology will make a major contribution to the development and spread of this segment.

【図面の簡単な説明】[Brief explanation of drawings]

Claims (1)

【特許請求の範囲】 1)絶縁基板上にエレクトロルミネッセンス発光膜を絶
縁膜,電極膜等とともに積層してなる表示板であって、
積層膜構造中の少なくとも絶縁基板に接する部分にアル
カリ金属の含有量が小な絶縁性材料からなるバリア膜が
配設されたことを特徴とするエレクトロルミネッセンス
表示板。 2)請求項1に記載の表示板において、バリア膜が珪酸
アルミナ系の材料からなることを特徴とするエレクトロ
ルミネッセンス表示板。 3)請求項1に記載の表示板において、積層構造中の発
光膜に接する絶縁膜に対しバリア膜が用いられることを
特徴とするエレクトロルミネッセンス表示板。
[Scope of Claims] 1) A display board comprising an electroluminescent film laminated on an insulating substrate together with an insulating film, an electrode film, etc.,
An electroluminescent display board characterized in that a barrier film made of an insulating material with a small content of alkali metal is disposed at least in a portion of the laminated film structure that contacts an insulating substrate. 2) The electroluminescent display board according to claim 1, wherein the barrier film is made of an alumina silicate material. 3) The electroluminescent display board according to claim 1, wherein a barrier film is used for the insulating film in contact with the light emitting film in the laminated structure.
JP2300577A 1990-11-06 1990-11-06 Electroluminescence display board Expired - Lifetime JP2808886B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2300577A JP2808886B2 (en) 1990-11-06 1990-11-06 Electroluminescence display board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2300577A JP2808886B2 (en) 1990-11-06 1990-11-06 Electroluminescence display board

Publications (2)

Publication Number Publication Date
JPH04171698A true JPH04171698A (en) 1992-06-18
JP2808886B2 JP2808886B2 (en) 1998-10-08

Family

ID=17886517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2300577A Expired - Lifetime JP2808886B2 (en) 1990-11-06 1990-11-06 Electroluminescence display board

Country Status (1)

Country Link
JP (1) JP2808886B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08161935A (en) * 1994-12-01 1996-06-21 Sunstar Eng Inc Organic dispersion electroluminescent element and reflecting insulation layer composition used for it

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374676A (en) * 1986-09-18 1988-04-05 Nec Corp Printer ribbon cassette device
JPS63128596A (en) * 1986-11-17 1988-06-01 富士通株式会社 Electroluminescence panel
JPS63190294A (en) * 1987-01-31 1988-08-05 株式会社リコー Electroluminescence device
JPS6443997A (en) * 1987-08-08 1989-02-16 Alps Electric Co Ltd Membranous el display element
JPH0256894A (en) * 1988-08-23 1990-02-26 Nec Kansai Ltd Thin film electroluminescence panel

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374676A (en) * 1986-09-18 1988-04-05 Nec Corp Printer ribbon cassette device
JPS63128596A (en) * 1986-11-17 1988-06-01 富士通株式会社 Electroluminescence panel
JPS63190294A (en) * 1987-01-31 1988-08-05 株式会社リコー Electroluminescence device
JPS6443997A (en) * 1987-08-08 1989-02-16 Alps Electric Co Ltd Membranous el display element
JPH0256894A (en) * 1988-08-23 1990-02-26 Nec Kansai Ltd Thin film electroluminescence panel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08161935A (en) * 1994-12-01 1996-06-21 Sunstar Eng Inc Organic dispersion electroluminescent element and reflecting insulation layer composition used for it

Also Published As

Publication number Publication date
JP2808886B2 (en) 1998-10-08

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