JPH04363893A - El display device and manufacture thereof - Google Patents
El display device and manufacture thereofInfo
- Publication number
- JPH04363893A JPH04363893A JP3139117A JP13911791A JPH04363893A JP H04363893 A JPH04363893 A JP H04363893A JP 3139117 A JP3139117 A JP 3139117A JP 13911791 A JP13911791 A JP 13911791A JP H04363893 A JPH04363893 A JP H04363893A
- Authority
- JP
- Japan
- Prior art keywords
- display device
- dielectric layer
- film
- back electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 18
- 239000010407 anodic oxide Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000003929 acidic solution Substances 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 20
- 238000000059 patterning Methods 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910052593 corundum Inorganic materials 0.000 description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、薄型で表示の視認性が
優れ、例えばＯＡ機器などの端末ディスプレイとして最
適であるＥＬ表示装置に関するものであり、更に詳しく
は発光特性が長期にわたって安定なＥＬ表示装置及びそ
の製造方法に関するものである。[Field of Industrial Application] The present invention relates to an EL display device that is thin and has excellent display visibility, and is ideal as a terminal display for, for example, OA equipment. The present invention relates to a display device and a method for manufacturing the same.
【０００２】0002
【従来の技術】従来よりＥＬ素子をＸ−Ｙマトリックス
構成にした薄膜ＥＬ表示装置が知られている。一般に、
このＥＬ表示装置は第１誘電体層／蛍光体層／第２誘電
体層の積層薄膜の両面に水平方向電極群と垂直方向電極
群とを互いに直交するように配置し、それぞれの電極群
に接続された給電線により、切り換え装置を通して信号
を加えて両電極の交点部分の蛍光体層を発光させ（この
交点の発光部分面を絵素と称する）、発光した絵素の組
合せによって文字、記号、図形等を表示させるものであ
る。2. Description of the Related Art Thin film EL display devices in which EL elements are arranged in an X-Y matrix have been known. in general,
This EL display device has a horizontal electrode group and a vertical electrode group arranged perpendicularly to each other on both sides of a laminated thin film of a first dielectric layer/phosphor layer/second dielectric layer. A signal is applied through the switching device using the connected power supply line to cause the phosphor layer at the intersection of both electrodes to emit light (the light-emitting area at this intersection is called a picture element), and the combination of the emitted picture elements produces characters and symbols. , figures, etc. are displayed.
【０００３】上記ＥＬ表示装置は通常ガラス製の透光性
基板上に、スズをドープした酸化インジウム（以下ＩＴ
Ｏと略称する）からなる透明な平行電極群を形成し、そ
の上に第１誘電体層、蛍光体層、第２誘電体層を順次形
成し、さらにその上に、一般にＡｌ金属からなる背面平
行電極群を前記透明電極群に直交する配置で積層して作
製する。The above-mentioned EL display device usually uses tin-doped indium oxide (hereinafter referred to as IT) on a transparent substrate made of glass.
A first dielectric layer, a phosphor layer, and a second dielectric layer are sequentially formed on the transparent parallel electrode group, and a back surface generally made of Al metal is formed on the transparent parallel electrode group. It is produced by laminating parallel electrode groups in an arrangement perpendicular to the transparent electrode group.
【０００４】また、ＥＬ表示装置を湿気から保護し、薄
膜層間剥離を防止することによる長寿命化を目的とした
パッシベーションを、絶縁油やゼオライトでの封止、も
しくはＡｌ２Ｏ３膜のような化学的に安定な薄膜で覆う
といった構成で行なう。[0004] In addition, passivation aimed at prolonging the life of the EL display device by protecting it from moisture and preventing delamination between thin layers has been achieved by sealing with insulating oil or zeolite, or chemically using an Al2O3 film. This is done by covering it with a stable thin film.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、背面電極のパターニング、及びパッシベ
ーションといった、製造プロセスにおいて工程が多くな
るという問題点を有していた。However, the conventional structure described above has a problem in that the manufacturing process requires many steps such as patterning and passivation of the back electrode.
【０００６】本発明は上記従来の問題点を解決するもの
で、背面電極のパターニングとパッシベーションを陽極
酸化によって行い、耐環境性に優れ、化学的に安定な酸
化物によるバックパッシベーション膜で覆われたＥＬ表
示装置及びその製造方法を提供することを目的とする。The present invention solves the above-mentioned conventional problems.The patterning and passivation of the back electrode are performed by anodic oxidation, and the back electrode is covered with a back passivation film made of chemically stable oxide. An object of the present invention is to provide an EL display device and a method for manufacturing the same.
【０００７】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明のＥＬ表示装置及びその製造方法は、背面電極
と同じ金属の金属薄膜を２回陽極酸化を行なうことによ
り背面電極と酸化物薄膜とを形成したことを特徴とする
ものである。[Means for Solving the Problems] In order to achieve this object, the EL display device of the present invention and its manufacturing method are such that the back electrode and oxide are separated by anodizing twice a metal thin film of the same metal as the back electrode. It is characterized by forming a thin film.
【０００８】[0008]
【作用】この構成によって、製造プロセスにおける工程
を減らし、容易に耐環境性に優れ、化学的に安定な酸化
物薄膜によるバックパッシベーション膜で覆われたＥＬ
表示装置及びその製造方法を形成することができる。[Function] This structure reduces the number of steps in the manufacturing process and makes it easy to use an EL device covered with a back passivation film made of a chemically stable oxide thin film that has excellent environmental resistance.
A display device and a method for manufacturing the same can be formed.
【０００９】[0009]
【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１０】（図１）は本発明の一実施例におけるバッ
クパッシベーション膜を用いたＥＬ表示装置の基本構成
断面図である。また、（図２）は本発明の一実施例にお
けるバックパッシベーション膜を用いたＥＬ表示装置の
製造方法を説明するための断面図である。（図１）また
は（図２）において、１は陽極酸化物薄膜（バックパッ
シベーション膜）、２はポーラスタイプ陽極酸化膜、３
はバリヤータイプ陽極酸化膜、４は背面電極、５は背面
電極用材料、６はマスク、７は第２誘電体層、８は蛍光
体層、９は第１誘電体層、１０は透明電極、１１はガラ
ス基板である。(FIG. 1) is a sectional view of the basic configuration of an EL display device using a back passivation film in one embodiment of the present invention. Further, (FIG. 2) is a cross-sectional view for explaining a method of manufacturing an EL display device using a back passivation film in one embodiment of the present invention. In (Figure 1) or (Figure 2), 1 is an anodic oxide thin film (back passivation film), 2 is a porous type anodic oxide film, and 3 is a porous type anodic oxide film.
is a barrier type anodic oxide film, 4 is a back electrode, 5 is a back electrode material, 6 is a mask, 7 is a second dielectric layer, 8 is a phosphor layer, 9 is a first dielectric layer, 10 is a transparent electrode, 11 is a glass substrate.
【００１１】（図２）（ａ）に示すように、ガラス基板
１１上に合金ターゲットを用いてＩＴＯ薄膜を直流スパ
ッタ法で形成し、ホトリソグラフィ技術によりストライ
プ状に加工し、透明電極１０とした。第１誘電体層９は
ＳｉＯＮとし、Ｓｉターゲットを用いて窒素と一酸化窒
素の混合ガス中で、反応性スパッタ法により２００ｎｍ
の厚さに形成した。その上にＥＢ蒸着法でＺｎＳ：Ｍｎ
を用いた蛍光体層８を４５０ｎｍの厚さに形成した。発
光センターのＭｎの含量は０．８原子％にした。蛍光体
層８形成後、輝度アップのため真空雰囲気中で５５０℃
、１時間の熱処理を行なった。そして第２誘電体層７を
蛍光体層８の上に２００〜４００ｎｍの厚さに形成した
。薄膜材料、及び製膜方法は第１誘電体層９の時と同じ
である。最後に背面電極用材料５としてＡｌを、下地積
層膜を覆い隠すように膜厚１５０ｎｍ製膜する。As shown in FIG. 2(a), an ITO thin film was formed on a glass substrate 11 by direct current sputtering using an alloy target, and processed into stripes by photolithography to form a transparent electrode 10. . The first dielectric layer 9 is made of SiON, and is deposited to 200 nm by reactive sputtering in a mixed gas of nitrogen and nitric oxide using a Si target.
It was formed to a thickness of . On top of that, ZnS:Mn was deposited by EB evaporation method.
A phosphor layer 8 was formed to have a thickness of 450 nm. The Mn content of the luminescent center was set to 0.8 at%. After forming the phosphor layer 8, the temperature was heated to 550°C in a vacuum atmosphere to increase brightness.
, heat treatment was performed for 1 hour. Then, a second dielectric layer 7 was formed on the phosphor layer 8 to a thickness of 200 to 400 nm. The thin film material and film forming method are the same as those for the first dielectric layer 9. Finally, an Al film with a thickness of 150 nm is formed as the back electrode material 5 so as to cover the underlying laminated film.
【００１２】次に、（図２）（ｂ）に示すようにこの背
面電極用材料５の背面電極部分の上にレジスト等により
マスク６を作製し、第１の陽極酸化として、背面電極部
分以外を陽極酸化しポーラスタイプＡｌ２Ｏ３陽極酸化
膜２を製膜する。この時、ｐＨ＝２の酸性の陽極酸化液
（例えば３％クエン酸水溶液）を用い、ウォーターバス
により溶液温度を５０℃に保ち、膜厚が約２００ｎｍと
なるように電圧１４０Ｖを印加し陽極酸化を行う。Next, as shown in FIG. 2(b), a mask 6 is made using a resist or the like on the back electrode part of this back electrode material 5, and as a first anodic oxidation, the parts other than the back electrode part are is anodized to form a porous type Al2O3 anodic oxide film 2. At this time, using an acidic anodic oxidation solution (for example, 3% citric acid aqueous solution) with a pH of 2, the solution temperature was maintained at 50°C in a water bath, and a voltage of 140V was applied so that the film thickness was about 200 nm. I do.
【００１３】次に、（図２）（ｃ）に示すようにマスク
６を取り除きｐＨ＝６〜７の中性の陽極酸化液（例えば
３％ほう酸アンモニウム水溶液：エチレングリコール＝
１：９）を用いて第２の陽極酸化を行ない、マスク６に
より隠されていた部分とポーラスタイプＡｌ２Ｏ３陽極
酸化膜２の一部をバリヤータイプＡｌ２Ｏ３陽極酸化膜
３とし、背面電極４のまわりに約７５ｎｍ（電圧値約５
０Ｖ）得る。これにより、（図１）に示すような構造の
、バックパッシベーション膜１（Ａｌ２Ｏ３）により保
護されたＥＬ表示装置を製造することができる。Next, as shown in FIG. 2(c), the mask 6 is removed and a neutral anodic oxidizing solution (for example, 3% ammonium borate aqueous solution: ethylene glycol=pH=6 to 7) is removed.
1:9), the part hidden by the mask 6 and a part of the porous type Al2O3 anodic oxide film 2 are made into a barrier type Al2O3 anodic oxide film 3, and around the back electrode 4. Approximately 75 nm (voltage value approximately 5
0V). As a result, an EL display device having a structure as shown in FIG. 1 and protected by the back passivation film 1 (Al2O3) can be manufactured.
【００１４】この方法によって製膜された酸化物薄膜は
、緻密であり膜厚斑が無い等といった優れた特性を有し
ている。さらにＡｌ２Ｏ３は化学的にも非常に安定な薄
膜である。その結果、ＥＬ表示装置の湿気による特性の
劣化を、このバックパッシベーション膜１を用いること
によって防ぐことができる。ここで、（図２）（ｂ）に
おけるポーラスタイプ陽極酸化膜２の代わりにバリヤー
タイプ陽極酸化膜を用いても同様のＥＬ表示装置が得ら
れる。また、この効果は普遍的なものであり、バックパ
ッシベーション膜に用いられる薄膜材料を、Ｔａ２Ｏ５
、ＴｉＯ２等、陽極酸化によって製膜が可能な材料とす
ることにより、同様の効果を示す優れたＥＬ表示装置が
実現できる。The oxide thin film formed by this method has excellent properties such as being dense and having no unevenness in film thickness. Furthermore, Al2O3 is a chemically very stable thin film. As a result, by using this back passivation film 1, deterioration of the characteristics of the EL display device due to moisture can be prevented. Here, a similar EL display device can be obtained by using a barrier type anodic oxide film instead of the porous type anodic oxide film 2 in (FIG. 2) (b). Moreover, this effect is universal, and the thin film material used for the back passivation film is Ta2O5
By using a material that can be formed into a film by anodic oxidation, such as , TiO2, etc., an excellent EL display device exhibiting similar effects can be realized.
【００１５】さらに、（図１）に示すようなバックパッ
シベーション膜を用いたＥＬ表示装置を製造して動作を
確認した。蛍光体層には硫化物を用いたＥＬ表示装置を
製造した。上記のようなバックパッシベーション膜を用
いることにより、（図３）に示すような長時間駆動にお
いても従来の方法のパッシベーションによるＥＬ表示装
置と変わらない安定な特性を示すＥＬ表示装置ができた
。Furthermore, an EL display device using a back passivation film as shown in FIG. 1 was manufactured and its operation was confirmed. An EL display device using sulfide in the phosphor layer was manufactured. By using the above-described back passivation film, an EL display device that exhibits stable characteristics similar to those of an EL display device using conventional passivation even during long-time driving as shown in FIG. 3 was created.
【００１６】[0016]
【発明の効果】以上のように本発明は、背面電極層と同
じ金属薄膜を２回陽極酸化を行なうことにより背面電極
と酸化物薄膜とを形成するという構成を設けることによ
り、プロセスが簡略化され、化学的に安定な酸化物薄膜
によるバックパッシベーション膜を製膜し、薄膜層間剥
離を防止できる優れたＥＬ表示装置を実現できるもので
ある。[Effects of the Invention] As described above, the present invention simplifies the process by providing a structure in which the same metal thin film as the back electrode layer is anodized twice to form the back electrode and the oxide thin film. By forming a back passivation film using a chemically stable oxide thin film, it is possible to realize an excellent EL display device that can prevent delamination between thin film layers.
【図１】本発明の一実施例におけるバックパッシベーシ
ョン膜を用いたＥＬ表示装置の基本構成断面図FIG. 1 is a cross-sectional view of the basic configuration of an EL display device using a back passivation film in one embodiment of the present invention.
【図２】
本発明の一実施例におけるＥＬ表示装置の製造方法を説
明するための断面図[Figure 2]
A cross-sectional view for explaining a method of manufacturing an EL display device according to an embodiment of the present invention
【図３】本発明の一実施例におけるＥＬ表示装置の動作
説明のための寿命特性図[Fig. 3] Life characteristic diagram for explaining the operation of the EL display device in one embodiment of the present invention
１ 陽極酸化物薄膜（バックパッシベーション膜）２
ポーラスタイプ陽極酸化膜
３ バリヤータイプ陽極酸化膜
４ 背面電極
５ 背面電極用材料
６ マスク
７ 第２誘電体層
８ 蛍光体層
９ 第１誘電体層
１０ 透明電極
１１ ガラス基板1 Anodic oxide thin film (back passivation film) 2
Porous type anodic oxide film 3 Barrier type anodic oxide film 4 Back electrode 5 Back electrode material 6 Mask 7 Second dielectric layer 8 Phosphor layer 9 First dielectric layer 10 Transparent electrode 11 Glass substrate
Claims (5)
成された透明電極と、前記透明電極上に形成された第１
誘電体層と、前記第１誘電体層上に形成された蛍光体層
と、前記蛍光体層上に形成された第２誘電体層と、前記
第２誘電体層上に形成された所定のパターンを有する背
面電極と、前記第２誘電体層と前記背面電極を覆うよう
に形成された前記背面電極と同じ金属の陽極酸化物薄膜
とを備えたことを特徴とするＥＬ表示装置。1. A glass substrate, a transparent electrode formed on the glass substrate, and a first electrode formed on the transparent electrode.
a dielectric layer, a phosphor layer formed on the first dielectric layer, a second dielectric layer formed on the phosphor layer, and a predetermined dielectric layer formed on the second dielectric layer. An EL display device comprising: a back electrode having a pattern; and an anodic oxide thin film made of the same metal as the back electrode and formed to cover the second dielectric layer and the back electrode.
、またはチタンの酸化膜であることを特徴とする請求項
１記載のＥＬ表示装置。2. The EL display device according to claim 1, wherein the anodic oxide film is an oxide film of aluminum, tantalum, or titanium.
層、蛍光体層、第２誘電体層、及び背面電極となる金属
と同じ金属層を順次積層し、前記金属層を所定のパター
ンにマスクした後第１の陽極酸化をし、前記マスクを除
去した後第２の陽極酸化を行なうことを特徴とするＥＬ
表示装置の製造方法。3. A transparent electrode, a first dielectric layer, a phosphor layer, a second dielectric layer, and the same metal layer as the back electrode are sequentially laminated on a glass substrate, and the metal layers are formed in a predetermined pattern. EL characterized in that a first anodic oxidation is performed after masking, and a second anodic oxidation is performed after removing the mask.
A method for manufacturing a display device.
れ、第２の陽極酸化が中性溶液中で行なわれることを特
徴とする請求項３記載のＥＬ表示装置の製造方法。4. The method of manufacturing an EL display device according to claim 3, wherein the first anodic oxidation is performed in an acidic solution and the second anodic oxidation is performed in a neutral solution.
、またはチタンの酸化膜であることを特徴とする請求項
３記載のＥＬ表示装置の製造方法。5. The method of manufacturing an EL display device according to claim 3, wherein the anodic oxide film is an oxide film of aluminum, tantalum, or titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3139117A JP2844964B2 (en) | 1991-06-11 | 1991-06-11 | Manufacturing method of EL display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3139117A JP2844964B2 (en) | 1991-06-11 | 1991-06-11 | Manufacturing method of EL display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04363893A true JPH04363893A (en) | 1992-12-16 |
| JP2844964B2 JP2844964B2 (en) | 1999-01-13 |
Family
ID=15237895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3139117A Expired - Fee Related JP2844964B2 (en) | 1991-06-11 | 1991-06-11 | Manufacturing method of EL display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2844964B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447499B1 (en) * | 2002-05-07 | 2004-09-07 | 주식회사 엘리아테크 | Organic electro luminescence display and method for manufacturing the same |
| KR100621862B1 (en) * | 2001-09-21 | 2006-09-13 | 엘지전자 주식회사 | Packaging Case of Electro-Luminescence Display Panel |
| US7863601B2 (en) | 2005-10-20 | 2011-01-04 | Samsung Mobile Display Co., Ltd. | Organic light emitting display, method of fabricating the same, and mobile display including the organic light emitting display |
| US8679626B2 (en) | 2009-01-28 | 2014-03-25 | Samsung Electronics Co., Ltd. | Carbon fiber including carbon fiber core coated with dielectric film, and fiber-based light emitting device including the carbon fiber |
-
1991
- 1991-06-11 JP JP3139117A patent/JP2844964B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100621862B1 (en) * | 2001-09-21 | 2006-09-13 | 엘지전자 주식회사 | Packaging Case of Electro-Luminescence Display Panel |
| KR100447499B1 (en) * | 2002-05-07 | 2004-09-07 | 주식회사 엘리아테크 | Organic electro luminescence display and method for manufacturing the same |
| US7863601B2 (en) | 2005-10-20 | 2011-01-04 | Samsung Mobile Display Co., Ltd. | Organic light emitting display, method of fabricating the same, and mobile display including the organic light emitting display |
| US8679626B2 (en) | 2009-01-28 | 2014-03-25 | Samsung Electronics Co., Ltd. | Carbon fiber including carbon fiber core coated with dielectric film, and fiber-based light emitting device including the carbon fiber |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2844964B2 (en) | 1999-01-13 |
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